TW200918449A - Making colloidal ternary nanocrystals - Google Patents
Making colloidal ternary nanocrystals Download PDFInfo
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- TW200918449A TW200918449A TW097132770A TW97132770A TW200918449A TW 200918449 A TW200918449 A TW 200918449A TW 097132770 A TW097132770 A TW 097132770A TW 97132770 A TW97132770 A TW 97132770A TW 200918449 A TW200918449 A TW 200918449A
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- Prior art keywords
- ternary
- semiconductor
- nanocrystal
- shell
- core
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- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
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- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
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- GRAKJTASWCEOQI-UHFFFAOYSA-N tridodecylphosphane Chemical compound CCCCCCCCCCCCP(CCCCCCCCCCCC)CCCCCCCCCCCC GRAKJTASWCEOQI-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WVPGXJOLGGFBCR-UHFFFAOYSA-N trioctyl phosphate Chemical group CCCCCCCCOP(=O)(OCCCCCCCC)OCCCCCCCC WVPGXJOLGGFBCR-UHFFFAOYSA-N 0.000 description 1
- IPMQPHCQJFIQFR-UHFFFAOYSA-N tris-decyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCCCP(=S)(CCCCCCCCCC)CCCCCCCCCC IPMQPHCQJFIQFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- C30B29/50—Cadmium sulfide
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
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- Thermal Sciences (AREA)
- Luminescent Compositions (AREA)
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| CN (1) | CN101835875A (enExample) |
| TW (1) | TW200918449A (enExample) |
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| US10008631B2 (en) | 2011-11-22 | 2018-06-26 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
| US10236410B2 (en) | 2012-02-05 | 2019-03-19 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals, methods for making same, compositions, and products |
| US10734546B2 (en) | 2011-11-22 | 2020-08-04 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
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| WO2023119960A1 (ja) * | 2021-12-23 | 2023-06-29 | パナソニックＩｐマネジメント株式会社 | 半導体ナノ粒子の製造方法及び半導体ナノ粒子 |
| CN117625195A (zh) * | 2023-10-24 | 2024-03-01 | 中国科学技术大学 | 具有取向发光的量子点及其制备方法、应用 |
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| ATE556845T1 (de) * | 2001-07-20 | 2012-05-15 | Life Technologies Corp | Lumineszierende nanopartikel und ihre herstellung |
| FR2838241B1 (fr) * | 2002-04-09 | 2004-06-25 | Commissariat Energie Atomique | Materiaux luminescents constitues de nanocristaux a structure coeur/coquille et leur procede de preparation |
| US7056471B1 (en) * | 2002-12-16 | 2006-06-06 | Agency For Science Technology & Research | Ternary and quarternary nanocrystals, processes for their production and uses thereof |
| US7981667B2 (en) * | 2003-05-07 | 2011-07-19 | Indiana University Research And Technology Corporation | Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto |
| EP1702020B1 (en) * | 2003-12-12 | 2016-04-06 | Life Technologies Corporation | Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties |
| US7943396B2 (en) * | 2004-06-22 | 2011-05-17 | The Regents Of The University Of California | Peptide-coated nanoparticles with graded shell compositions |
| EP2292718A3 (en) * | 2004-11-11 | 2011-06-22 | Samsung Electronics Co., Ltd | Interfused nanocrystals and method of preparing the same |
| EP1812335A4 (en) * | 2004-11-19 | 2009-07-01 | Agency Science Tech & Res | PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS |
| US20110129944A1 (en) * | 2005-01-17 | 2011-06-02 | Agency For Science, Technology And Research | Water-soluble nanocrystals and methods of preparing them |
| CN101389790A (zh) * | 2006-01-20 | 2009-03-18 | 新加坡科技研究局 | 在含水溶剂或水溶性溶剂中合成纳米合金晶体 |
| US9181472B2 (en) * | 2007-05-31 | 2015-11-10 | Life Technologies Corporation | Magnesium-based coatings for nanocrystals |
| JP2010535692A (ja) * | 2007-08-06 | 2010-11-25 | エージェンシー フォー サイエンス，テクノロジー アンド リサーチ | カドミウムおよびセレン含有ナノ結晶複合材料を形成する方法ならびに該方法から得られるナノ結晶複合材料 |
| US7777233B2 (en) * | 2007-10-30 | 2010-08-17 | Eastman Kodak Company | Device containing non-blinking quantum dots |
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2007
- 2007-10-29 US US11/926,538 patent/US20100289003A1/en not_active Abandoned
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2008
- 2008-08-18 EP EP08795413A patent/EP2215187A1/en not_active Withdrawn
- 2008-08-18 CN CN200880113211A patent/CN101835875A/zh active Pending
- 2008-08-18 WO PCT/US2008/009834 patent/WO2009058173A1/en not_active Ceased
- 2008-08-18 JP JP2010530993A patent/JP2011505432A/ja active Pending
- 2008-08-27 TW TW097132770A patent/TW200918449A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10008631B2 (en) | 2011-11-22 | 2018-06-26 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
| US10734546B2 (en) | 2011-11-22 | 2020-08-04 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
| US10236410B2 (en) | 2012-02-05 | 2019-03-19 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals, methods for making same, compositions, and products |
| US10553750B2 (en) | 2012-02-05 | 2020-02-04 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals, methods for making same, compositions, and products |
| TWI692118B (zh) * | 2012-02-05 | 2020-04-21 | 南韓商三星電子股份有限公司 | 半導體奈米晶體、其製造方法、組合物及產物 |
Also Published As
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|---|---|
| JP2011505432A (ja) | 2011-02-24 |
| CN101835875A (zh) | 2010-09-15 |
| WO2009058173A1 (en) | 2009-05-07 |
| EP2215187A1 (en) | 2010-08-11 |
| US20100289003A1 (en) | 2010-11-18 |
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