JP5826908B2 - 半導体ナノ粒子、および、半導体ナノ粒子の製造方法 - Google Patents
半導体ナノ粒子、および、半導体ナノ粒子の製造方法 Download PDFInfo
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- JP5826908B2 JP5826908B2 JP2014224554A JP2014224554A JP5826908B2 JP 5826908 B2 JP5826908 B2 JP 5826908B2 JP 2014224554 A JP2014224554 A JP 2014224554A JP 2014224554 A JP2014224554 A JP 2014224554A JP 5826908 B2 JP5826908 B2 JP 5826908B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/621—Chalcogenides
- C09K11/623—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
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ヨウ化ガリウム(270mg、0.6mmol)、ナトリウムアミド(500mg、12.8mmol)、ヘキサデカンチオール(308μL、10mmol)、ステアリン酸亜鉛(379mg、0.6mmol)および1−オクタデセン(20mL)を250℃まで急速に加熱し、当該温度にて維持した。上記反応において、ヨウ化ガリウムは、III族に属する金属(ガリウム)を供給し、ナトリウムアミドは、窒素原子を供給し、ヘキサデカンチオールは、電子供与基を有するキャッピング試薬として機能し、ステアリン酸亜鉛は、II族に属する金属(亜鉛)を供給し、1−オクタデセンは、溶媒として機能する。60分間の反応時間の間に、反応混合物の一部からなるサンプルを複数個分取した(1サンプルあたり、0.25mL)。トルエン(3mL)を用いて上記サンプルを希釈した後、遠心分離によって、不溶性物質を除去した。得られた透明の溶液について、発光分光(emission spectroscopy)を解析したところ、図1に示すように、反応が進行するにしたがって、450nm−600nmの発光波長のピークが変化した。発光スペクトルのピークは、最大強度の半分における全幅が、100nmのオーダーである。
ヨウ化インジウム(300mg、0.6mmol)、ナトリウムアミド(500mg、12.8mmol)、ヘキサデカンチオール(308μL、10mmol)、ステアリン酸亜鉛(379mg、0.6mmol)およびジフェニルエーテル(20mL)を250℃まで急速に加熱し、当該温度にて維持した。上記反応において、ヨウ化インジウムは、III族に属する金属(インジウム)を供給し、ナトリウムアミドは、窒素原子を供給し、ヘキサデカンチオールは、電子供与基を有するキャッピング試薬として機能し、ステアリン酸亜鉛は、II族に属する金属(亜鉛)を供給し、ジフェニルエーテルは、溶媒として機能する。60分間の反応時間の間に、反応混合物の一部からなるサンプルを複数個分取した(1サンプルあたり、0.25mL)。シクロヘキサン(3mL)を用いて上記サンプルを希釈した後、遠心分離によって、不溶性物質を除去した。得られた透明の溶液について、PL発光分光(PL emission spectroscopy)を解析したところ、図4に示すように、反応が進行するにしたがって、500nm−850nmの最大発光波長が変化した。(図4の最も左側の発光スペクトルは、反応を開始してから略5分後に回収した反応混合物のサンプルから得られた発光スペクトルである。他の発光スペクトルは、反応を開始してから略10分後、略15分後、略20分後、略25分後、略35分後および略60分後に回収した反応混合物のサンプルから得られた発光スペクトルである。)発光スペクトルのピークは、最大強度の半分における全幅が、100nmのオーダーである。
ヨウ化アルミニウム(102mg、0.25mmol)、ナトリウムアミド(468mg、12mmol)、ヘキサデカンチオール(259μL、10mmol)、ステアリン酸亜鉛(474mg、0.75mmol)および1−オクタデセン(25mL)を250℃まで急速に加熱し、当該温度にて維持した。上記反応において、ヨウ化アルミニウムは、III族に属する金属(アルミニウム)を供給し、ナトリウムアミドは、窒素原子を供給し、ヘキサデカンチオールは、電子供与基を有するキャッピング試薬として機能し、ステアリン酸亜鉛は、II族に属する金属(亜鉛)を供給し、1−オクタデセンは、溶媒として機能する。60分間の反応時間の間に、反応混合物の一部からなるサンプルを複数個分取した(1サンプルあたり、0.25mL)。トルエン(3mL)を用いて上記サンプルを希釈した後、遠心分離によって、不溶性物質を除去した。得られた透明の溶液を、吸光光度法および発光分光法によって解析したところ、図6に示すように、反応が進行するにしたがって、420nm−950nmの最大発光波長が変化した。発光スペクトルのピークは、最大強度の半分における全幅が、100nmのオーダーである。
ステアリン酸亜鉛の代わりにステアリン酸マグネシウムを初発材料として用いたこと以外は、実施例2に記載された方法と同様の方法によって、MgInNナノ結晶を製造した。
ナトリウムアミド(500mg、12.8mmol)、ステアリン酸亜鉛(379mg、0.6mmol)および1−オクタデセン(20mL)を250℃まで急速に加熱し、当該温度にて維持した。上記反応において、ナトリウムアミドは、窒素原子を供給し、ステアリン酸亜鉛は、II族に属する金属(亜鉛)を供給し、1−オクタデセンは、溶媒として機能する。60分間の反応時間の間に、反応混合物の一部からなるサンプルを複数個分取した(1サンプルあたり、0.25mL)。トルエン(3mL)を用いて上記サンプルを希釈した後、遠心分離によって、不溶性物質を除去した。得られた透明の溶液を、PL発光分光によって解析したところ、図7に示すように、反応が進行するにしたがって、450nm−850nmの最大発光波長が変化した。(図7の最も左側の発光スペクトルは、反応を開始してから2、3分後に回収した反応混合物のサンプルから得られた発光スペクトルであり、図7の最も右側の発光スペクトルは、反応を開始してから略60分後に回収した反応混合物のサンプルから得られた発光スペクトルである。最も左側の発光スペクトルと最も右側の発光スペクトルとの間の発光スペクトルは、複数の中間の時間に回収した反応混合物のサンプルから得られた発光スペクトルである。)発光スペクトルのピークは、最大強度の半分における全幅が、100nmのオーダーである。
ヨウ化ガリウム(113mg、0.25mmol)、ヨウ化インジウム(124mg、0.25mmol)、ナトリウムアミド(390mg、10mmol)、ヘキサデカンチオール(153μL、0.5mmol)、ステアリン酸亜鉛(316mg、0.5mmol)および1−オクタデセン(40mL)を225℃にまで急速に加熱した。20分後に、混合物を室温にまで冷却するとともに、当該混合物を遠心分離することによって、不溶性物質を除去した。当該混合物は、ZnInGaNナノ粒子であるコアのみを含んでいる。上記ナノ粒子のコアの周りにZnGaNのシェルを形成するために、20mLのコア溶液を、更にヨウ化ガリウム(113mg、0.25mmol)、ステアリン酸亜鉛(316mg)およびナトリウムアミド(185mg、5mmol)にて処理した後、225℃にて20分間加熱した。
ヨウ化ガリウム(113mg、0.25mmol)、ヨウ化インジウム(124mg、0.25mmol)、ナトリウムアミド(390mg、10mmol)、ヘキサデカンチオール(153μL、0.5mmol)、ステアリン酸亜鉛(316mg、0.5mmol)および1−オクタデセン(40mL)を225℃にまで急速に加熱した。20分後に、混合物を室温にまで冷却するとともに、当該混合物を遠心分離することによって、不溶性物質を除去した。当該混合物は、ZnInGaNナノ粒子であるコアのみを含んでいる。上記ナノ粒子のコアの周りにZnSのシェルを形成するために、デカンテーションによって、着色した溶液を固体から分離した後、4mLのサンプルを、175℃にて40分間、ジエチルジチオカルバミン酸亜鉛(100mg、0.27mmol)にて処理した。
ヨウ化ガリウム(113mg、0.25mmol)、ヨウ化インジウム(124mg、0.25mmol)、ナトリウムアミド(390mg、10mmol)、ヘキサデカンチオール(153μL、0.5mmol)、ステアリン酸亜鉛(316mg、0.5mmol)および1−オクタデセン(40mL)を225℃にまで急速に加熱した。20分後に、混合物を室温にまで冷却するとともに、当該混合物を遠心分離することによって、不溶性物質を除去した。当該混合物は、ZnInGaNナノ粒子であるコアのみを含んでいる。上記ナノ粒子のコアの周りに内側のシェルであるZnGaNを形成するために、20mLの溶液産物を、更にヨウ化ガリウム(113mg、0.25mmol)およびナトリウムアミド(185mg、5mmol)にて処理した後、225℃にて20分間加熱した。溶液産物を遠心分離することによって不溶性物質を除去した後、外側のシェルであるZnSを形成するために、ジエチルジチオカルバミン酸亜鉛(500mg、1.35mmol)にて処理するとともに、175℃にて60分間加熱した。
Claims (16)
- 一般式II−III−Nにて示される第1の化合物(但し、II族に属する元素、III属に属する元素、および、V族に属する元素の各々を少なくとも1体積%含む)にて形成されている半導体ナノ粒子であって、
上記IIは、周期表のII族に属する1つ以上の元素であり、上記IIIは、周期表のIII族に属する1つ以上の元素である半導体ナノ粒子。 - 上記半導体ナノ粒子は、ZnGaNにて形成されている請求項1に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、ZnInNにて形成されている請求項1に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、ZnAlNにて形成されている請求項1に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、ZnGaInNにて形成されている請求項1に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、MgInNにて形成されている請求項1に記載の半導体ナノ粒子。
- 上記一般式II−III−Nにて示される第1の化合物は、上記半導体ナノ粒子のコアを形成し、
上記半導体ナノ粒子は、更に、上記コアの周りに配置された層を有し、
上記層は、上記一般式II−III−Nにて示される第1の化合物とは異なる組成の半導体材料にて形成されている請求項1〜6の何れか1項に記載の半導体ナノ粒子。 - 上記層は、一般式II−Nまたは一般式II−III−Nにて示される第2の化合物にて形成されており、
上記一般式II−Nまたは一般式II−III−Nにて示される第2の化合物は、上記一般式II−III−Nにて示される第1の化合物とは異なる組成である請求項7に記載の半導体ナノ粒子。 - 上記半導体ナノ粒子は、光を放射するものである請求項1〜8の何れか1項に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、少なくとも5%の光ルミネセンス量子収量を有している請求項9に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、少なくとも20%の光ルミネセンス量子収量を有している請求項9に記載の半導体ナノ粒子。
- 上記半導体ナノ粒子は、少なくとも50%の光ルミネセンス量子収量を有している請求項9に記載の半導体ナノ粒子。
- II族に属する元素の少なくとも1つの供給源と、III族に属する元素の少なくとも1つの供給源と、窒素の少なくとも1つの供給源と、を反応させる工程を有する半導体ナノ粒子の製造方法であって、
上記半導体ナノ粒子は、一般式II−III−Nにて示される材料(但し、II族に属する元素、III属に属する元素、および、V族に属する元素の各々を少なくとも1体積%含む)にて形成されており、
上記IIは、周期表のII族に属する1つ以上の元素であり、上記IIIは、周期表のIII族に属する1つ以上の元素である半導体ナノ粒子の製造方法。 - 上記II族に属する元素の少なくとも1つの供給源は、II族に属する元素のカルボン酸塩を含む請求項13に記載の半導体ナノ粒子の製造方法。
- 上記II族に属する元素の少なくとも1つの供給源は、ステアリン酸亜鉛を含む請求項14に記載の半導体ナノ粒子の製造方法。
- 上記窒素の少なくとも1つの供給源は、アミドを含む請求項13〜15の何れか1項に記載の半導体ナノ粒子の製造方法。
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US9985173B2 (en) | 2018-05-29 |
JP2013129839A (ja) | 2013-07-04 |
CN102344164A (zh) | 2012-02-08 |
US20120025146A1 (en) | 2012-02-02 |
GB2482311A (en) | 2012-02-01 |
JP5645978B2 (ja) | 2014-12-24 |
CN102344164B (zh) | 2015-05-27 |
US8900489B2 (en) | 2014-12-02 |
JP2015078372A (ja) | 2015-04-23 |
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