CN101835875A - 制备胶状三元纳米晶体的方法 - Google Patents

制备胶状三元纳米晶体的方法 Download PDF

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Publication number
CN101835875A
CN101835875A CN200880113211A CN200880113211A CN101835875A CN 101835875 A CN101835875 A CN 101835875A CN 200880113211 A CN200880113211 A CN 200880113211A CN 200880113211 A CN200880113211 A CN 200880113211A CN 101835875 A CN101835875 A CN 101835875A
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nanocrystal
ternary
semiconductor
shell
binary
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K·B·卡汗
任小凡
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Eastman Kodak Co
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50—Cadmium sulfide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Luminescent Compositions (AREA)
CN200880113211A 2007-10-29 2008-08-18 制备胶状三元纳米晶体的方法 Pending CN101835875A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/926,538 US20100289003A1 (en) 2007-10-29 2007-10-29 Making colloidal ternary nanocrystals
US11/926,538 2007-10-29
PCT/US2008/009834 WO2009058173A1 (en) 2007-10-29 2008-08-18 Making colloidal ternary nanocrystals

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CN101835875A true CN101835875A (zh) 2010-09-15

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US (1) US20100289003A1 (enExample)
EP (1) EP2215187A1 (enExample)
JP (1) JP2011505432A (enExample)
CN (1) CN101835875A (enExample)
TW (1) TW200918449A (enExample)
WO (1) WO2009058173A1 (enExample)

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CN104531142A (zh) * 2014-12-23 2015-04-22 北京理工大学 一种用掺杂锌的硫化镉纳米带调制黄光的方法
US9153734B2 (en) 2011-11-09 2015-10-06 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
CN108264894A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米发光材料、制备方法及半导体器件
CN108475694A (zh) * 2015-07-30 2018-08-31 奥斯兰姆奥普托半导体有限责任公司 低镉纳米晶体量子点异质结构
CN108559483A (zh) * 2018-05-18 2018-09-21 河南大学 一种非闪烁量子点及其制备方法
CN109072069A (zh) * 2015-10-27 2018-12-21 亮锐有限责任公司 用于发光装置的波长转换材料
CN109666476A (zh) * 2017-10-16 2019-04-23 乐金显示有限公司 量子点、量子点发光二极管和量子点显示装置
CN109896507A (zh) * 2019-03-12 2019-06-18 湖北大学 一种蓝光CdSe纳米片的晶型调控方法
CN111378429A (zh) * 2018-12-29 2020-07-07 苏州星烁纳米科技有限公司 量子点及其制备方法
WO2020224439A1 (zh) * 2019-05-07 2020-11-12 纳晶科技股份有限公司 一种核壳量子点、其制备方法及量子点光电器件
TWI720671B (zh) * 2019-10-29 2021-03-01 欣盛光電股份有限公司 核-殼發光量子點材料及其製造方法
CN112779012A (zh) * 2019-11-11 2021-05-11 欣盛光电股份有限公司 核-壳发光量子点材料及其制造方法
CN117625195A (zh) * 2023-10-24 2024-03-01 中国科学技术大学 具有取向发光的量子点及其制备方法、应用

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US11205741B2 (en) 2011-11-09 2021-12-21 Osram Opto Semiconductors Gmbh Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix
US9153734B2 (en) 2011-11-09 2015-10-06 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
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US10074780B2 (en) 2011-11-09 2018-09-11 Osram Opto Semiconductors Gmbh Composite having semiconductor structures including a nanocrystalline core and shell
US12107197B2 (en) 2011-11-09 2024-10-01 Osram Opto Semiconductors Gmbh Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix
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CN104531142A (zh) * 2014-12-23 2015-04-22 北京理工大学 一种用掺杂锌的硫化镉纳米带调制黄光的方法
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