TW200915396A - Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor - Google Patents

Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor Download PDF

Info

Publication number
TW200915396A
TW200915396A TW097117849A TW97117849A TW200915396A TW 200915396 A TW200915396 A TW 200915396A TW 097117849 A TW097117849 A TW 097117849A TW 97117849 A TW97117849 A TW 97117849A TW 200915396 A TW200915396 A TW 200915396A
Authority
TW
Taiwan
Prior art keywords
gas
chamber
wafer
gas distribution
base
Prior art date
Application number
TW097117849A
Other languages
English (en)
Chinese (zh)
Inventor
Shijian Li
Lily L Pang
Majeed A Foad
Seon-Mee Cho
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200915396A publication Critical patent/TW200915396A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW097117849A 2007-05-15 2008-05-15 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor TW200915396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/748,783 US7691755B2 (en) 2007-05-15 2007-05-15 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor

Publications (1)

Publication Number Publication Date
TW200915396A true TW200915396A (en) 2009-04-01

Family

ID=40027953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117849A TW200915396A (en) 2007-05-15 2008-05-15 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor

Country Status (5)

Country Link
US (1) US7691755B2 (https=)
JP (1) JP2009004755A (https=)
KR (1) KR100993104B1 (https=)
CN (1) CN101308784B (https=)
TW (1) TW200915396A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source
US9000402B2 (en) 2009-09-01 2015-04-07 Ihi Corporation LPP EUV light source and method for producing the same
TWI581303B (zh) * 2014-10-23 2017-05-01 Gas guide ring, gas supply device and induction coupling plasma processing device

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008050596A1 (en) * 2006-10-25 2008-05-02 Panasonic Corporation Plasma doping method and plasma doping apparatus
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
EP2422359A4 (en) * 2009-04-20 2013-07-03 Applied Materials Inc REINFORCED ABSORPTION OF RESTFLUORRADIKALEN WITH THE HELP OF A SILICONE COATING ON PROCESS CHAMBER WALLS
CN102296275B (zh) * 2010-06-25 2013-10-16 中国科学院微电子研究所 基片离子均匀注入的方法
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US9302348B2 (en) 2011-06-07 2016-04-05 Ultratech Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US8309474B1 (en) * 2011-06-07 2012-11-13 Ultratech, Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
CN103165377B (zh) * 2011-12-12 2016-02-03 中国科学院微电子研究所 一种等离子体浸没注入电极结构
CN103915307B (zh) * 2012-12-31 2016-08-17 中微半导体设备(上海)有限公司 等离子体处理室及用于该等离子体处理室的气体注入装置
CN107424901B (zh) * 2013-03-12 2019-06-11 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
MY187052A (en) * 2013-03-15 2021-08-27 Plasmability Llc Toroidal plasma processing apparatus
CN104576280B (zh) * 2013-10-23 2017-10-20 中微半导体设备(上海)有限公司 等离子体处理腔室及其去夹持装置和方法
CN104810238A (zh) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 匀气结构及等离子体系统
JP6242288B2 (ja) * 2014-05-15 2017-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9613819B2 (en) * 2014-06-06 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Process chamber, method of preparing a process chamber, and method of operating a process chamber
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
CN108292588B (zh) * 2015-12-04 2022-02-18 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
JP6804280B2 (ja) * 2016-12-07 2020-12-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6270191B1 (ja) * 2017-05-17 2018-01-31 日本新工芯技株式会社 保護材用リング
US20190051495A1 (en) * 2017-08-10 2019-02-14 Qiwei Liang Microwave Reactor For Deposition or Treatment of Carbon Compounds
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
CN118471789A (zh) 2018-11-16 2024-08-09 玛特森技术公司 腔室上光以通过减少化学成分改善刻蚀均匀性
CN112376029B (zh) * 2020-11-11 2022-10-21 北京北方华创微电子装备有限公司 等离子体浸没离子注入设备
CN114597145A (zh) * 2022-03-09 2022-06-07 盛吉盛半导体科技(北京)有限公司 一种硅反应装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source
US9000402B2 (en) 2009-09-01 2015-04-07 Ihi Corporation LPP EUV light source and method for producing the same
TWI581303B (zh) * 2014-10-23 2017-05-01 Gas guide ring, gas supply device and induction coupling plasma processing device

Also Published As

Publication number Publication date
US7691755B2 (en) 2010-04-06
KR100993104B1 (ko) 2010-11-08
CN101308784A (zh) 2008-11-19
JP2009004755A (ja) 2009-01-08
US20080286982A1 (en) 2008-11-20
KR20080101740A (ko) 2008-11-21
CN101308784B (zh) 2012-06-20

Similar Documents

Publication Publication Date Title
TW200915396A (en) Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
JP6042942B2 (ja) ガス分配装置およびこれを備える基板処理装置
TWI275124B (en) Hardware development to reduce bevel deposition
US9644271B1 (en) Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
JP5607699B2 (ja) プラズマ均一性および効果を改良するための誘導結合プラズマ源の設計
JP5782090B2 (ja) プラズマ反応器及び半導体基板を製造する方法
KR102586618B1 (ko) 고 종횡비 비아들의 세정
KR20210042939A (ko) 전자빔 매개 플라즈마 에칭 및 증착 공정을 위한 장치 및 공정
US20070193688A1 (en) Process tuning gas injection from the substrate edge
JP2010512650A (ja) 乾燥フォトレジスト除去プロセスと装置
KR20140115795A (ko) 라이너 어셈블리 및 이를 구비하는 기판 처리 장치
JP2009004755A5 (https=)
KR20100133377A (ko) 원자층 증착에 의해 보조되는 등각 플라즈마 이온 임플란트(ｐｉｉｉ)를 위한 신규 방법
KR20090039936A (ko) 원격 플라즈마를 이용한 기판 식각장치 및 이를 이용한기판 식각방법
TW200842974A (en) Process for wafer backside polymer removal with wafer front side gas purge
TW201137966A (en) Plasma treatment device and plasma treatment method
TW200919563A (en) Apparatus and method for processing a substrate edge region
KR101234706B1 (ko) 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR101632376B1 (ko) 가스 분배 장치 및 이를 구비하는 기판 처리 장치
KR20100122917A (ko) 아래로 구부러진 가장자리에 의해서 가장자리 효과가 억제된 전극을 사용하는 플라즈마 이온 주입
KR101614032B1 (ko) 가스 분배 장치 및 이를 구비하는 기판 처리 장치
TW201101414A (en) Substrate support having side gas outlets and methods
JP2021518973A (ja) 基板処理装置
TWI743242B (zh) 高壓退火及降低濕蝕刻速率
JP2000031121A (ja) プラズマ放出装置及びプラズマ処理装置