CN101308784B - 用于环形源反应器的具有高均匀腔室干燥工艺的等离子体浸没离子注入 - Google Patents

用于环形源反应器的具有高均匀腔室干燥工艺的等离子体浸没离子注入 Download PDF

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Publication number
CN101308784B
CN101308784B CN2008100975877A CN200810097587A CN101308784B CN 101308784 B CN101308784 B CN 101308784B CN 2008100975877 A CN2008100975877 A CN 2008100975877A CN 200810097587 A CN200810097587 A CN 200810097587A CN 101308784 B CN101308784 B CN 101308784B
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China
Prior art keywords
chamber
gas
silicon
wafer
wafer support
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Expired - Fee Related
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CN2008100975877A
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English (en)
Chinese (zh)
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CN101308784A (zh
Inventor
施建·李
莉莉·L·潘
马吉德·A·福德
善-美·邱
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008100975877A 2007-05-15 2008-05-15 用于环形源反应器的具有高均匀腔室干燥工艺的等离子体浸没离子注入 Expired - Fee Related CN101308784B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/748,783 2007-05-15
US11/748,783 US7691755B2 (en) 2007-05-15 2007-05-15 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor

Publications (2)

Publication Number Publication Date
CN101308784A CN101308784A (zh) 2008-11-19
CN101308784B true CN101308784B (zh) 2012-06-20

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CN2008100975877A Expired - Fee Related CN101308784B (zh) 2007-05-15 2008-05-15 用于环形源反应器的具有高均匀腔室干燥工艺的等离子体浸没离子注入

Country Status (5)

Country Link
US (1) US7691755B2 (https=)
JP (1) JP2009004755A (https=)
KR (1) KR100993104B1 (https=)
CN (1) CN101308784B (https=)
TW (1) TW200915396A (https=)

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US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
EP2422359A4 (en) * 2009-04-20 2013-07-03 Applied Materials Inc REINFORCED ABSORPTION OF RESTFLUORRADIKALEN WITH THE HELP OF A SILICONE COATING ON PROCESS CHAMBER WALLS
JP2011054376A (ja) 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
CN102484938B (zh) 2009-09-01 2014-12-10 株式会社Ihi 等离子体光源
CN102296275B (zh) * 2010-06-25 2013-10-16 中国科学院微电子研究所 基片离子均匀注入的方法
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US9302348B2 (en) 2011-06-07 2016-04-05 Ultratech Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US8309474B1 (en) * 2011-06-07 2012-11-13 Ultratech, Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
CN103165377B (zh) * 2011-12-12 2016-02-03 中国科学院微电子研究所 一种等离子体浸没注入电极结构
CN103915307B (zh) * 2012-12-31 2016-08-17 中微半导体设备(上海)有限公司 等离子体处理室及用于该等离子体处理室的气体注入装置
CN107424901B (zh) * 2013-03-12 2019-06-11 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
MY187052A (en) * 2013-03-15 2021-08-27 Plasmability Llc Toroidal plasma processing apparatus
CN104576280B (zh) * 2013-10-23 2017-10-20 中微半导体设备(上海)有限公司 等离子体处理腔室及其去夹持装置和方法
CN104810238A (zh) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 匀气结构及等离子体系统
JP6242288B2 (ja) * 2014-05-15 2017-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9613819B2 (en) * 2014-06-06 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Process chamber, method of preparing a process chamber, and method of operating a process chamber
CN105529237B (zh) * 2014-10-23 2018-05-01 中微半导体设备(上海)有限公司 气体导流环、气体供应装置及等离子体处理装置
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
CN108292588B (zh) * 2015-12-04 2022-02-18 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
JP6804280B2 (ja) * 2016-12-07 2020-12-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6270191B1 (ja) * 2017-05-17 2018-01-31 日本新工芯技株式会社 保護材用リング
US20190051495A1 (en) * 2017-08-10 2019-02-14 Qiwei Liang Microwave Reactor For Deposition or Treatment of Carbon Compounds
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
CN118471789A (zh) 2018-11-16 2024-08-09 玛特森技术公司 腔室上光以通过减少化学成分改善刻蚀均匀性
CN112376029B (zh) * 2020-11-11 2022-10-21 北京北方华创微电子装备有限公司 等离子体浸没离子注入设备
CN114597145A (zh) * 2022-03-09 2022-06-07 盛吉盛半导体科技(北京)有限公司 一种硅反应装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems

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Publication number Publication date
US7691755B2 (en) 2010-04-06
KR100993104B1 (ko) 2010-11-08
CN101308784A (zh) 2008-11-19
JP2009004755A (ja) 2009-01-08
US20080286982A1 (en) 2008-11-20
KR20080101740A (ko) 2008-11-21
TW200915396A (en) 2009-04-01

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