JP5607699B2 - プラズマ均一性および効果を改良するための誘導結合プラズマ源の設計 - Google Patents
プラズマ均一性および効果を改良するための誘導結合プラズマ源の設計 Download PDFInfo
- Publication number
- JP5607699B2 JP5607699B2 JP2012231630A JP2012231630A JP5607699B2 JP 5607699 B2 JP5607699 B2 JP 5607699B2 JP 2012231630 A JP2012231630 A JP 2012231630A JP 2012231630 A JP2012231630 A JP 2012231630A JP 5607699 B2 JP5607699 B2 JP 5607699B2
- Authority
- JP
- Japan
- Prior art keywords
- baffle
- enclosure
- plasma
- plasma reactor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009616 inductively coupled plasma Methods 0.000 title description 18
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 50
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (19)
- 誘電体窓を形成する天盤を有するエンクロージャと、
前記誘電体窓の下のエンクロージャ内に配置される基板支持体と、
前記エンクロージャ内にRF電力を印加するために前記誘電体窓の上に配置されるRF電力アプリケータと、
前記エンクロージャ内にプラズマガスを供給するためのプラズマガス注入装置と、
プラズマガスの流れを制限するために、前記エンクロージャ内に配置され、前記基板支持体の上であるが、前記プラズマガス注入装置の下に配置されるバッフルと、
を備え、
前記バッフルは、前記バッフルの中に埋め込まれるRFアンテナを備える、
プラズマ反応器。 - 前記プラズマガス注入装置は、前記エンクロージャの周囲に均一に分配される複数のノズルを備え、前記バッフルは、前記エンクロージャの中央の方向へ流れを方向付けるように、プラズマガスの流れを制限する、請求項1に記載のプラズマ反応器。
- 前記バッフルは、中央開口部を有する円盤を備える、請求項2に記載のプラズマ反応器。
- 前記バッフルは、前記中央開口部から延在する垂直方向の延在部をさらに備える、請求項3に記載のプラズマ反応器。
- 前記延在部は円錐形の部分を含む、請求項4に記載のプラズマ反応器。
- 前記バッフルは誘電材料を含む、請求項1に記載のプラズマ反応器。
- 前記誘電材料はセラミックおよび石英から選択される、請求項6に記載のプラズマ反応器。
- 前記バッフルは、前記中央開口部の周囲に均一に分配される二次的開口部をさらに備える、請求項3に記載のプラズマ反応器。
- 前記バッフルは導体材料を含む、請求項1に記載のプラズマ反応器。
- 前記バッフルは垂直方向に移動可能である、請求項1に記載のプラズマ反応器。
- 前記プラズマガス注入装置は、前記天盤の中央に設けられる中央ノズルをさらに備える、請求項2に記載のプラズマ反応器。
- 前記バッフルは、その中に埋め込まれるRFアンテナを有する誘電性円盤と、前記バッフルを通すRF放射を遮断するように前記バッフルの片側に設けられた導体円盤とを備える、請求項1に記載のプラズマ反応器。
- 円筒形の側壁と天盤とを有するエンクロージャであって、前記天盤の少なくとも一部は誘電体窓を形成する、エンクロージャと、
前記誘電体窓の下の前記エンクロージャ内に配置され、基板を支持する基板支持体と、
前記誘電体窓を通して、前記エンクロージャ内にRF電力を印加するために前記誘電体窓の上に配置されるRF電力アプリケータと、
処理ガスを前記エンクロージャ内に供給するための前記基板支持体の上に均一に分配される複数のガス注入装置と、
処理ガスの流れを制限するように、前記エンクロージャ内に配置され、前記基板支持体の上であるが、前記複数のガス注入装置の下に配置される円形バッフルと、
を備え、
前記バッフルは、前記バッフルの中に埋め込まれるRFアンテナを備える、
プラズマ反応器。 - 前記バッフルは、陽極酸化アルミニウム、セラミック、または石英の1つを含む、請求項13に記載のプラズマ反応器。
- 前記バッフルは、中央開口部と、前記基板支持体の方向に対して前記開口部から下方に延在する延在部とを有する平らな円盤を備え、前記バッフルと前記基板との間に間隙を形成する、請求項13に記載のプラズマ反応器。
- 前記延在部は、円筒形部分または円錐形部分の1つを含む、請求項15に記載のプラズマ反応器。
- 前記間隙は可変である、請求項15に記載のプラズマ反応器。
- プラズマ反応器内に配置される基板支持体に基板を配置する工程であって、前記プラズマ反応器は、円筒形の側壁と、天盤とを有するエンクロージャを備え、前記天盤の少なくとも一部は誘電体窓を形成し、RF電力アプリケータが、前記誘電体窓を通して前記エンクロージャ内にRF電力を印加するために前記誘電体窓の上に配置され、複数のガス注入装置が前記基板の上に均一に分配される、工程と、
前記基板の上に間隙を形成するように、前記基板支持体の上であるが、前記複数のガス注入装置の下であるように、内部にRFアンテナが埋め込まれる円形のバッフルを前記エンクロージャ内に配置する工程と、
前記注入装置に処理ガスを供給する工程と、
前記RF電力アプリケータにRF電力を印加する工程と、
を含む、半導体基板を製造する方法。 - 前記間隙を変化させる工程をさらに含む、請求項18に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110319252.7 | 2011-10-19 | ||
CN201110319250.8 | 2011-10-19 | ||
CN201110319250.8A CN102355792B (zh) | 2011-10-19 | 2011-10-19 | 改进等离子均匀性和效率的电感耦合等离子装置 |
CN2011103192527A CN102395243A (zh) | 2011-10-19 | 2011-10-19 | 改进等离子均匀性和效率的电感耦合等离子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013089972A JP2013089972A (ja) | 2013-05-13 |
JP5607699B2 true JP5607699B2 (ja) | 2014-10-15 |
Family
ID=48136315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012231630A Active JP5607699B2 (ja) | 2011-10-19 | 2012-10-19 | プラズマ均一性および効果を改良するための誘導結合プラズマ源の設計 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9095038B2 (ja) |
JP (1) | JP5607699B2 (ja) |
KR (2) | KR20130043062A (ja) |
TW (1) | TW201318024A (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103796413B (zh) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | 等离子反应器及制作半导体基片的方法 |
KR101383291B1 (ko) * | 2012-06-20 | 2014-04-10 | 주식회사 유진테크 | 기판 처리 장치 |
US20140166618A1 (en) * | 2012-12-14 | 2014-06-19 | The Penn State Research Foundation | Ultra-high speed anisotropic reactive ion etching |
US10553398B2 (en) * | 2013-09-06 | 2020-02-04 | Applied Materials, Inc. | Power deposition control in inductively coupled plasma (ICP) reactors |
US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
KR101535155B1 (ko) * | 2014-01-09 | 2015-07-09 | 주식회사 유진테크 | 기판 처리장치 |
CN107306473B (zh) * | 2016-04-25 | 2019-04-30 | 中微半导体设备(上海)股份有限公司 | 一种半导体处理装置及处理基片的方法 |
KR101798373B1 (ko) | 2016-05-03 | 2017-11-17 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 유전체창 지지구조 |
KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
TWI633585B (zh) * | 2017-03-31 | 2018-08-21 | 漢民科技股份有限公司 | 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置 |
JP7131916B2 (ja) * | 2017-03-31 | 2022-09-06 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
KR101856689B1 (ko) * | 2017-10-23 | 2018-05-14 | 주식회사 기가레인 | 승강하는 유도부를 포함하는 기판 처리 장치 |
KR101987576B1 (ko) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | 승강하는 유도부와 연동하는 연동부를 포함하는 기판 처리 장치 |
KR101987577B1 (ko) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | 승강하는 유도부와 연동하는 배기조절부를 포함하는 기판 처리 장치 |
US12012652B2 (en) * | 2018-05-21 | 2024-06-18 | Applied Materials, Inc. | Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination |
JP7186032B2 (ja) * | 2018-07-27 | 2022-12-08 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US11615946B2 (en) * | 2018-07-31 | 2023-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Baffle plate for controlling wafer uniformity and methods for making the same |
JP7190894B2 (ja) | 2018-12-21 | 2022-12-16 | 昭和電工株式会社 | SiC化学気相成長装置 |
US20200234920A1 (en) * | 2019-01-22 | 2020-07-23 | Lam Research Corporation | Coil and window for plasma processing system |
US11515122B2 (en) * | 2019-03-19 | 2022-11-29 | Tokyo Electron Limited | System and methods for VHF plasma processing |
CN112447472B (zh) * | 2019-08-27 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | 改善气体均一分布的等离子体反应装置 |
CN114695042A (zh) * | 2020-12-28 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 射频调节装置、等离子体处理设备及射频电场调节方法 |
CN114724913A (zh) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | 一种改善刻蚀均匀性的双挡板装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0729890A (ja) * | 1993-07-08 | 1995-01-31 | Kokusai Electric Co Ltd | プラズマ発生装置 |
JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5846373A (en) * | 1996-06-28 | 1998-12-08 | Lam Research Corporation | Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber |
US6339206B1 (en) * | 1997-10-15 | 2002-01-15 | Tokyo Electron Limited | Apparatus and method for adjusting density distribution of a plasma |
JP2000331993A (ja) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP2001267248A (ja) * | 2000-03-15 | 2001-09-28 | Shibaura Mechatronics Corp | 半導体処理装置 |
US6761796B2 (en) * | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
WO2003029513A1 (en) * | 2001-09-28 | 2003-04-10 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
JP4330315B2 (ja) * | 2002-03-29 | 2009-09-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20030047536A1 (en) * | 2002-10-02 | 2003-03-13 | Johnson Wayne L. | Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma |
US20050241767A1 (en) | 2004-04-30 | 2005-11-03 | Ferris David S | Multi-piece baffle plate assembly for a plasma processing system |
KR100790392B1 (ko) * | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | 반도체 제조장치 |
KR100683174B1 (ko) * | 2005-06-17 | 2007-02-15 | 삼성전자주식회사 | 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템 |
KR100774521B1 (ko) | 2005-07-19 | 2007-11-08 | 주식회사 디엠에스 | 다중 안테나 코일군이 구비된 유도결합 플라즈마 반응장치 |
US20080124254A1 (en) * | 2006-05-22 | 2008-05-29 | Dae-Kyu Choi | Inductively Coupled Plasma Reactor |
US8647438B2 (en) | 2007-04-27 | 2014-02-11 | Applied Materials, Inc. | Annular baffle |
CN101255521B (zh) | 2008-04-08 | 2010-06-16 | 上海工程技术大学 | 一种硬质合金连接件 |
JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
-
2011
- 2011-12-26 US US13/337,248 patent/US9095038B2/en active Active
- 2011-12-30 TW TW100149971A patent/TW201318024A/zh unknown
-
2012
- 2012-10-11 KR KR1020120112872A patent/KR20130043062A/ko active Application Filing
- 2012-10-19 JP JP2012231630A patent/JP5607699B2/ja active Active
-
2015
- 2015-09-09 KR KR1020150127674A patent/KR20150108344A/ko active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
US20130102155A1 (en) | 2013-04-25 |
TW201318024A (zh) | 2013-05-01 |
KR20150108344A (ko) | 2015-09-25 |
US9095038B2 (en) | 2015-07-28 |
TWI445040B (ja) | 2014-07-11 |
JP2013089972A (ja) | 2013-05-13 |
KR20130043062A (ko) | 2013-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5607699B2 (ja) | プラズマ均一性および効果を改良するための誘導結合プラズマ源の設計 | |
JP5782090B2 (ja) | プラズマ反応器及び半導体基板を製造する方法 | |
KR102323168B1 (ko) | 리모트 원자층 증착을 위한 시스템들 및 방법들 | |
KR101451244B1 (ko) | 라이너 어셈블리 및 이를 구비하는 기판 처리 장치 | |
KR101246170B1 (ko) | 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치 | |
KR100988085B1 (ko) | 고밀도 플라즈마 처리 장치 | |
KR101076469B1 (ko) | 플라즈마 성막 장치 및 플라즈마 성막 방법 | |
JP6499771B2 (ja) | 基板処理装置 | |
KR20160137403A (ko) | 에지 플레넘 샤워헤드 어셈블리를 포함한 증착 장치 | |
JP2015225856A (ja) | ガス分配装置およびこれを備える基板処理装置 | |
WO2006135924A9 (en) | Improvement of etch rate uniformity using the independent movement of electrode pieces | |
TWI556308B (zh) | A plasma reactor with improved gas distribution | |
KR20160134908A (ko) | 기판 처리 장치 | |
KR101632376B1 (ko) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 | |
KR101232200B1 (ko) | 배플, 기판 처리 장치 및 그 처리 방법 | |
TW201318063A (zh) | 改進等離子均勻性和效率的電感耦合等離子裝置 | |
KR101614032B1 (ko) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 | |
TWI633811B (zh) | Plasma processing device and method for processing semiconductor substrate | |
KR101234595B1 (ko) | 플라즈마 발생 유닛 및 플라즈마 처리 장치 | |
KR20140038659A (ko) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 | |
KR102301693B1 (ko) | 기판처리장치 | |
JP7249358B2 (ja) | 基板処理装置 | |
CN214705850U (zh) | 一种上电极设备和等离子体处理装置 | |
KR20110027900A (ko) | 플라즈마 발생장치 및 기판 처리장치 | |
KR102215639B1 (ko) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140509 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140812 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140828 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5607699 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |