TW200913292A - Multi-junction solar cells and methods and apparatuses for forming the same - Google Patents
Multi-junction solar cells and methods and apparatuses for forming the same Download PDFInfo
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- TW200913292A TW200913292A TW097128158A TW97128158A TW200913292A TW 200913292 A TW200913292 A TW 200913292A TW 097128158 A TW097128158 A TW 097128158A TW 97128158 A TW97128158 A TW 97128158A TW 200913292 A TW200913292 A TW 200913292A
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- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000005137 deposition process Methods 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 639
- 229910052732 germanium Inorganic materials 0.000 claims description 338
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 338
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 168
- 239000007789 gas Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 163
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 140
- 239000001257 hydrogen Substances 0.000 claims description 122
- 229910052739 hydrogen Inorganic materials 0.000 claims description 122
- 230000008021 deposition Effects 0.000 claims description 81
- 239000000203 mixture Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 12
- 239000004575 stone Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- -1 nitrogen lanthanide Chemical class 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 2
- 229910001257 Nb alloy Inorganic materials 0.000 claims 3
- 229910052727 yttrium Inorganic materials 0.000 claims 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 3
- 229910000858 La alloy Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 98
- 210000004027 cell Anatomy 0.000 description 93
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 29
- 239000012159 carrier gas Substances 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 23
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 22
- 229910052707 ruthenium Inorganic materials 0.000 description 22
- 125000004429 atom Chemical group 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 17
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 14
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000005855 radiation Effects 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000003068 static effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229940071182 stannate Drugs 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XBZYWSMVVKYHQN-MYPRUECHSA-N (4as,6as,6br,8ar,9r,10s,12ar,12br,14bs)-10-hydroxy-2,2,6a,6b,9,12a-hexamethyl-9-[(sulfooxy)methyl]-1,2,3,4,4a,5,6,6a,6b,7,8,8a,9,10,11,12,12a,12b,13,14b-icosahydropicene-4a-carboxylic acid Chemical compound C1C[C@H](O)[C@@](C)(COS(O)(=O)=O)[C@@H]2CC[C@@]3(C)[C@]4(C)CC[C@@]5(C(O)=O)CCC(C)(C)C[C@H]5C4=CC[C@@H]3[C@]21C XBZYWSMVVKYHQN-MYPRUECHSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- FWGHIBOKOKUEIT-UHFFFAOYSA-N ruthenium tetrahydride Chemical compound [RuH4] FWGHIBOKOKUEIT-UHFFFAOYSA-N 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- CBIYWHCPXHKZME-UHFFFAOYSA-J tetrafluororuthenium Chemical compound [F-].[F-].[F-].[F-].[Ru+4] CBIYWHCPXHKZME-UHFFFAOYSA-J 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95160807P | 2007-07-24 | 2007-07-24 | |
| US98240007P | 2007-10-24 | 2007-10-24 | |
| US12/110,120 US20080223440A1 (en) | 2007-01-18 | 2008-04-25 | Multi-junction solar cells and methods and apparatuses for forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200913292A true TW200913292A (en) | 2009-03-16 |
Family
ID=40281799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097128158A TW200913292A (en) | 2007-07-24 | 2008-07-24 | Multi-junction solar cells and methods and apparatuses for forming the same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2171759A1 (fr) |
| JP (1) | JP2010534938A (fr) |
| KR (1) | KR101019273B1 (fr) |
| CN (1) | CN101542745B (fr) |
| TW (1) | TW200913292A (fr) |
| WO (1) | WO2009015213A1 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI405343B (zh) * | 2009-09-09 | 2013-08-11 | Univ Nat Pingtung Sci & Tech | 具有高光電轉換效率之可撓式太陽能電池及其製備方法 |
| TWI407578B (zh) * | 2009-12-31 | 2013-09-01 | Metal Ind Res Anddevelopment Ct | Chemical vapor deposition process |
| TWI415278B (zh) * | 2010-02-11 | 2013-11-11 | Nexpower Technology Corp | 具有多層結構的薄膜太陽能電池 |
| TWI415137B (zh) * | 2009-12-17 | 2013-11-11 | Macronix Int Co Ltd | 區域字元線驅動器 |
| TWI459571B (zh) * | 2009-12-29 | 2014-11-01 | Epistar Corp | 太陽能光電元件 |
| TWI467782B (zh) * | 2011-06-21 | 2015-01-01 | Asiatree Technology Co Ltd | 薄膜太陽能電池 |
| TWI511316B (zh) * | 2015-02-13 | 2015-12-01 | Neo Solar Power Corp | 異質接面太陽能電池及其製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2215652A4 (fr) * | 2007-11-02 | 2011-10-05 | Applied Materials Inc | Traitement au plasma entre des procédés de dépôt |
| FR2949237B1 (fr) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | Procede de nettoyage de la surface d'un substrat de silicium |
| KR100989615B1 (ko) * | 2009-09-02 | 2010-10-26 | 엘지전자 주식회사 | 태양전지 |
| WO2011097745A1 (fr) * | 2010-02-10 | 2011-08-18 | Oerlikon Solar Ag, Trübbach | Procédé de fabrication d'un panneau solaire |
| CN102194903B (zh) * | 2010-03-19 | 2013-07-31 | 晶元光电股份有限公司 | 一种具有渐变缓冲层太阳能电池 |
| JP5540431B2 (ja) * | 2010-07-30 | 2014-07-02 | 国立大学法人東北大学 | 光電変換部材 |
| KR101143477B1 (ko) * | 2011-01-28 | 2012-05-22 | (재)나노소자특화팹센터 | 유기 태양전지 및 그 제조 방법 |
| KR101573029B1 (ko) * | 2011-02-23 | 2015-12-03 | 한국전자통신연구원 | 박막 태양전지 및 그의 제조방법 |
| JP5409675B2 (ja) * | 2011-03-08 | 2014-02-05 | 三菱電機株式会社 | 薄膜太陽電池およびその製造方法 |
| CN104272473A (zh) * | 2012-05-10 | 2015-01-07 | Tel太阳能公司 | 具有提高的抗光致衰退性的硅基太阳能电池 |
| CN105470339A (zh) * | 2014-08-08 | 2016-04-06 | 上海建冶环保科技股份有限公司 | 一种纳米硅薄膜多结太阳能电池 |
| CN105489669B (zh) * | 2015-11-26 | 2018-10-26 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其界面处理方法 |
| JP6612359B2 (ja) * | 2015-12-24 | 2019-11-27 | 株式会社カネカ | 光電変換装置の製造方法 |
| KR101879363B1 (ko) * | 2017-01-17 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
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| US5256887A (en) * | 1991-07-19 | 1993-10-26 | Solarex Corporation | Photovoltaic device including a boron doping profile in an i-type layer |
| US5730808A (en) * | 1996-06-27 | 1998-03-24 | Amoco/Enron Solar | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
| JP3581546B2 (ja) * | 1997-11-27 | 2004-10-27 | キヤノン株式会社 | 微結晶シリコン膜形成方法および光起電力素子の製造方法 |
| JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| JP4335351B2 (ja) * | 1999-02-26 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP2002033499A (ja) | 2000-07-18 | 2002-01-31 | Sanyo Electric Co Ltd | 光起電力装置 |
| US7847186B2 (en) * | 2003-07-24 | 2010-12-07 | Kaneka Corporation | Silicon based thin film solar cell |
| JP2006269607A (ja) * | 2005-03-23 | 2006-10-05 | Canon Inc | 光起電力素子の製造方法 |
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2008
- 2008-07-23 JP JP2010518358A patent/JP2010534938A/ja not_active Withdrawn
- 2008-07-23 EP EP08782269A patent/EP2171759A1/fr not_active Withdrawn
- 2008-07-23 CN CN2008800001789A patent/CN101542745B/zh not_active Expired - Fee Related
- 2008-07-23 KR KR1020087026072A patent/KR101019273B1/ko not_active IP Right Cessation
- 2008-07-23 WO PCT/US2008/070900 patent/WO2009015213A1/fr active Application Filing
- 2008-07-24 TW TW097128158A patent/TW200913292A/zh unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI405343B (zh) * | 2009-09-09 | 2013-08-11 | Univ Nat Pingtung Sci & Tech | 具有高光電轉換效率之可撓式太陽能電池及其製備方法 |
| TWI415137B (zh) * | 2009-12-17 | 2013-11-11 | Macronix Int Co Ltd | 區域字元線驅動器 |
| TWI459571B (zh) * | 2009-12-29 | 2014-11-01 | Epistar Corp | 太陽能光電元件 |
| TWI407578B (zh) * | 2009-12-31 | 2013-09-01 | Metal Ind Res Anddevelopment Ct | Chemical vapor deposition process |
| TWI415278B (zh) * | 2010-02-11 | 2013-11-11 | Nexpower Technology Corp | 具有多層結構的薄膜太陽能電池 |
| TWI467782B (zh) * | 2011-06-21 | 2015-01-01 | Asiatree Technology Co Ltd | 薄膜太陽能電池 |
| TWI511316B (zh) * | 2015-02-13 | 2015-12-01 | Neo Solar Power Corp | 異質接面太陽能電池及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101542745B (zh) | 2013-03-06 |
| CN101542745A (zh) | 2009-09-23 |
| JP2010534938A (ja) | 2010-11-11 |
| EP2171759A1 (fr) | 2010-04-07 |
| WO2009015213A1 (fr) | 2009-01-29 |
| KR101019273B1 (ko) | 2011-03-07 |
| KR20090035471A (ko) | 2009-04-09 |
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