200913040 九、發明說明： 【發明所屬 <技術匈域】 發明領域 本發明係有關於一種可檢測a 间 但η«州阳囫研磨面之刮痕之晶圓 5 之研磨方法及研磨裝置。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and a polishing apparatus for a wafer 5 which can detect scratches between a and y] state imperfection surfaces.
t先前技術;J 發明背景 表面I成有夕1C、LSI等裝置，且以分割預定線（切 割道)劃分各裝置之半導體晶圓於以研耗置研磨裡面，加 1〇工成預定厚度後，以切割裝置切削分割預线，分割成各 裝置’而利用於行動電話、個人電腦等電器。 研磨晶圓裡面之研磨裝置包含有保持晶圓之夾盤、將 配設有研磨保持於該失盤之晶圓之磨石的磨輪支撐成《旋 轉之研磨機構、將研磨水供給至研磨區域之研磨水供給機 15構’以將晶圓加工成預定厚度。 當晶圓之厚度在l〇〇ym以下，甚至薄至5〇μιη以下 時’於晶圓裡面產生之研磨變形成為使裝置之抗撓強度降 低之原因’為提高抗撓強度而以蝕刻等去除變形時，此次 將在晶圓内部浮動之重金屬保持於裡面側之除氣效果消 2〇 失，裝置之品質明顯下降。 是故，本申請人在日本專利公開公報2006-1007號提出 主要以可抑制研磨變形，維持抗撓強度，同時，亦可維持 除氣效果之陶瓷磨石作為加工研磨用磨石。 [專利文獻1]特開2006-1007號公報 5 200913040 【發明内容】 發明揭示 發明欲解決之問題 而觀察使用專利文獻丨揭示之陶瓷磨，研磨之晶圓研磨 5面犄，以40〜50片中有1片之比例存在產生刮痕之晶圓，而 在此晶圓有產生刮痕之部份之抗撓強度降低之問題。 本發明即是鑑於此點而發明者，其目的係提供無刮痕 之晶圓之研磨方法及研磨裝置。 用以欲解決問題之手段 10 根據申請專利範圍第1項之發明，提供一種晶圓之研磨 方法，其係使用包含有保持晶圓之夾盤、及具有研磨保持 於該夾盤之晶圓之磨輪之研磨機構的研磨裝置者。該晶圓 之研磨方法係以刮痕檢測機構檢測晶圓之研磨面有無刮 痕，且當未檢測出刮痕時，便將晶圓搬送至下一個步驟， 15而當檢測出到痕時，便繼續進行研磨或進行刮痕去除研磨。 根據申請專利範圍第2項之發明’提供一種晶圓之研磨 方法’其係使用包含保持晶圓之夾盤、具有研磨保持於該 夹盤之晶圓之研磨輪之研磨機構、及檢測於晶圓之研磨面 產生之刮痕之刮痕檢測機構之研磨裝置者。該晶圓之研磨 20方法係於以磨輪研磨晶圓之晶圓研磨步驟結束後，執行以 刮痕檢測機構檢測晶圓之研磨面有無刮痕之刮痕檢測步 驟’且當刮痕存在時，便執行去除刮痕之刮良去除研磨步 驟’之後’再度執行到痕檢測步驟，而當在前述檢測步驟， 未從晶圓之研磨面檢測出刮痕時，則將晶圓搬送至下一個 200913040 步驟。 根據申請專利範圍第3項之發明，提供—種包含保持晶 圓之夹盤、及具有研磨保持於該夾盤之晶圓之磨輪之研磨 機構的研磨裝置，其更包含有檢測於晶圓之研磨面產生之 5到痕之到痕檢測機構。 又，前述刮痕檢測機構宜具有拍攝晶圓之研磨面以取 得影像資訊之拍攝機構、將該拍攝機構拍攝之影像二進制 化處理之二進制化處理機構、及藉來自該二進制化處理機 構之資訊判定刮痕之刮痕判定機構。 10發明效果 根據本發明之晶圓之研磨方法及研磨裝置，從晶圓之 研磨面檢測刮痕，當有刮痕時，便繼續進行研磨，或者進 〜】痕去除研磨，將無刮痕之晶圓搬送至下一個步驟，故 可以良好效率生產無到痕之晶圓。 5 【貧施方式】 用以實施發明之最佳形態 以下，參照圖式，詳細說明本發明實施形態之晶圓之 =磨方法及研磨裝置。第丨圖係加工成預定厚度前之半導體 W日日圓之立體gj。圖所示之半導體晶圓n由厚度7〇〇_ 夕曰a圓構成，於表面形成複數個格子狀切割道13，同時， ;以忒複數個切割道13劃分之複數個區域形成IC、LSI等裝 置15。 如此構成之半導體晶圓叫有形成有裝置15之裝置區 域17、圍繞裳置區域17之外周剩餘區如。又，於半導體 200913040 晶圓11外周形成作為顯示矽晶圓之結晶方位之標記的缺 2卜 ' 於半導體晶圓U之表面lla以保護帶貼附步驟貼附保 護帶23。因而，可以保護帶2玲護半導體晶圓n之表面 lla，如第2圖所示，呈裡面Ub露出之形態。 說明將如此構成之半導體晶am之 以下，參照第3圖， 裡面ub研磨成預定厚冑之研磨裝置2。研磨裝置2之殼體4 由水平殼體部份6及垂直殼體部份8構成。 10 15 於垂直殼體部份8固定於上下方向延伸之—對引導軌 道12、14。研磨機構(研磨單元）16以沿此一對引導軌道以、 14於上下方向移動之狀態裝設。研磨單元16藉由支樓部 20，安裝於沿-對引導軌道12、14於上下方向移動之移動 基台18。 研磨單元16具有安裝於支撐部2〇之心轴殼體^、可旋 轉地收容於心、軸殼體22中之心軸24、旋轉_心軸24之飼 服馬達26。 如第6圖清楚顯#，於心軸24之前端部固定座28，於此 座28螺固磨輪30。舉例言之，磨輪3〇係於磨輪基台μ之自 瓜之鑽石研磨粒穩 由端部固定以玻璃熔結使粒徑〇 3〜1.0 # 固之複數個磨石34而構成。 藉由軟管36,將研磨水供給至研磨機構(研磨單元）16。 研磨水宜使用純水。如第6圖所示，從軟管％供給之研磨水 藉由形成於心軸24之研磨水供給孔38、形成於座以之空間 及形成於磨輪之磨輪基台32之複數個研磨水供給喷嘴 20 200913040 42，供給至磨石34及保持於夾盤％之晶圓u。 再參照第3圖’研磨裝置2具有使研磨單元16沿一對引 導轨C12 14於上下方向移動之研磨單元進給機構料。研 磨單π進給機構44由滾珠螺桿46、固定於滾珠螺桿恥之一 5端部之脈衝馬達48構成。當將脈衝馬達48脈衝驅動時，滚 珠螺桿46旋轉，移動基台18藉由固定於移動基台18内部之 滾珠螺桿46之螺帽，於上下方向移動。 於水平殼體部份6之凹部1〇配設夾盤單元5〇。如第4圖 所示，夾盤單元50具有支撐基台52、旋轉自如地配設於支 1〇撐基台52之夾盤54。夾盤單元5〇更具有具供夾盤54插通之 孔之蓋56。 失盤單元50以夾盤移動機構58於研磨裝置2之前後方 向移動。夾盤移動機構58由滾珠螺桿60、連結於滾珠螺桿 60之螺軸62 —端之脈衝馬達64構成。 15 當脈衝驅動脈衝馬達64時，滚珠螺桿64之螺軸62旋 轉’具有與此螺軸62螺合之螺帽之支撐基台52於研磨裝置2 之前後方向移動。是故，夾盤54亦依脈衝馬達64之旋轉方 向於前後方向移動 如第3圖所示，第4圖所示之一對引導軌道66、68及夾 2〇 盤移動機構58為蛇管70、72所覆蓋。即，蛇管70之前端固 定於劃分凹部10之前壁，後端部固定於蓋56之前端面。又， 蛇管72之後端固定於垂直殼體部份8,前端固定於蓋56之後 端面。 於殼體4之水平殼體部份6配設第1晶圓匣盒74、第2晶 9 200913040 圓£益76、晶圓搬送機播^ 饿穉乃、晶圓暫時載置機構80、晶圓 搬入機構82、晶圓搬屮地4故。 圓微出機構84、洗淨機構86。進一步，於 殼體4之前方設置作章昼 、 ’、員輪入研磨條件等之操作機構88。 於水平殼體部份6之約中央部設置洗淨夾盤Μ之洗淨 水喷射噴物。此洗淨水噴射㈣輝夾解元定位於晶 圓搬入搬出區域之狀態下，朝铺在夹盤54之研磨加工後 之晶圓喷出洗淨水。 夾盤單tl5G藉脈衝驅動夾盤移動機構％之脈衝馬達 64,在第3圖所示之裝置裡侧之研磨區域與從晶圓搬入機構 1〇 82㈣晶圓’將晶圓交遞至晶圓搬出機獅之前側之晶圓 搬入搬出區域間移動。 曰曰an搬出區域之上方配設有具有ccd照相機等之 拍攝裝置94。此拍攝裝置94拍攝晶圓此研磨面，取得影 像資訊。 如第7圖所示’以拍攝裝置94及影像處理裝置96構成檢 測研磨面之到痕之檢測機構95。影像處理裝置外具有將以 拍攝裝置94簡之研磨面之影像二進制狀二進制化處理 邠98輸入經一進制化處理部98二進制化之值，判定刮痕 之有無之刮痕判定部100。 以下，就如此構成之研磨裝置2之研磨作業作說明。收 容於第1晶圓匣盒74中之晶圓為保護帶裝設於表面側（形成 有電路之側之面）之半導體晶圓，因而，晶圓以裡面位於上 側之狀態收容於第1匣龛74中。如此，將收容有複數半導體 晶圓之第1晶圓匣盒74之殼體4之預定匣載置於搬入區域。 200913040 然後’當將收容在載置於匣盒搬入區域之第丨晶圓昆盒 74之研磨加工前的半導體晶圓完全搬出時，變成空晶圓匣 盒74’將收容有複數個半導體晶圓之新第丨晶圓匣盒％以手 動載置於匣盒搬入區域。 另-方面，將預定片數之研磨加工後之半導體晶圓搬 第2晶圓匣盒76 空第2晶圓匣盒 入至載置於殼體4之預定匣盒搬出區域之 時’以手動搬出此第2晶圓匣盒76，將新的 76載置於匣盒搬出區域。 以晶圓搬送機構78之上下動作及進退動作將收容於第 10 1晶圓匿盒74之半導體晶圓載置於晶圓暫時載置機構80。載 置於晶圓假載置機構80之晶圓在此進行中心對準後，以晶 圓搬入機構82之旋轉動作，載置於位在晶圓搬入搬出區域 之夾盤單元50之夾盤54，以夾盤54吸引保持。 如此，夾盤54吸引保持晶圓後，使夾盤移動機構58作 15動，移動夾盤單元54，定位於裝置後方之研磨區域。 富央·盤單元50定位於研磨區域時，保持於炎盤54之晶 圓之中心位於稍微超過磨輪3〇之外周圓之位置。 接著’使夾盤54以1〇〇〜300rpm左右旋轉，驅動伺服馬 達26 ’使磨輪30以4000〜7000rpm旋轉，同時，使研磨單元 20進給機構44之脈衝馬達48正轉驅動，而使研磨單元16下降。 然後，如第6圖所示，藉以預定之載重將磨輪30之磨石 34知:壓至夾盤54上之晶圓1丨之裡面（被研磨面），研磨晶圓11 之裡面。藉如此進行，研磨預定時間，將晶圓11研磨成預 定厚度。 11 200913040 研磨結束時，驅動夾盤移動機構58，使夾盤54定位於 裝置:側之晶圓搬入搬出區域。當夹盤54定位於晶圓搬入 搬出區域時，從洗淨水喷射噴嘴9〇喷射洗淨水，洗淨保持 :夾盤54之經研磨加工之晶圓u之被研磨面(裡面)。接著， 吏拍攝裝置94作動，拍攝晶圓之研磨面，取得研磨面之影 像。 以拍攝裝置94拍攝之影像以構成檢測機構％之影像處 理敦置96之二進制化處理部98二進制化。二進制化處理部 98之輸出輸出至刮痕判定部刚，以判定刮痕之有無。 1〇 &於研磨後之研磨面形成平滑之鏡面，故-旦到痕因 一些原因形成於研磨面時，因刮痕發亮，故經二進制化之 影像之刮痕為與背光之研磨面之值不同之值。是故，將研 磨面之反射光以預定之閾值二進制化時，無刮痕之研磨面 為〇，而刮痕則為“ 1，，。 15 如方塊102所示以刮痕判定部100，判定為無刮痕時， 進行方塊刚所示之晶圓洗淨步驟。即，解除保持於夹盤54 之晶圓之吸引保持後’將晶圓以晶圓搬出機構84搬送至洗 淨機構86。 將搬送至洗淨機構86之晶圓在此洗淨同時，旋轉乾 20燥。接著，以晶圓搬送機構78將晶圓收納於第2晶隨盒 之預定位置。 1 如方塊10 6所示，以刮痕判定部i 〇 〇，判定為有刮痕時， 執行方塊刚之刮痕去除研磨步驟。即，驅動爽盤移動機構 58,將夾盤54再度定位於研磨區域，以磨輪3〇之粒徑 12 200913040 執行研磨。 將研磨結束之晶圓以夾盤移動機構58再度定位於 搬入搬出區域，執行方塊110之刮痕檢測步驟。即，以 裝置94再度拍攝晶圓之研磨面，以影像處理裝置96之二進 5制化處理部98將所拍攝之影像二進制化，依此二進制^ 值，以刮痕判定部100判定有無刮痕。然後，最後判定為無 到痕時’執行方塊104之晶圓洗淨步驟。 … 本發明之晶圓之研磨方法及研磨裝置不限於以上說明 之實施形態。舉例言之，亦可將刮痕檢測機構95之拍攝裳 10置94與定位於研磨區域之夾盤54相鄰配置，檢測保持於爽 盤54 ’研磨中之晶圓之研磨面之刮痕。 根據此方法，於研磨結束時，檢測出刮痕時，以粒裎 約l#m繼續進行研磨，確認無刮痕後，結束研磨。 此外，亦可將刮痕檢測機構構造成於晶圓之研磨面傾 15 斜照射紅色雷射光線，以檢測因刮痕而散射之散射光。 【睏式簡單說明】 第1圖係半導體晶圓之表面側立體圖。 第2圖係貼附有保護帶之半導體晶圓之裡面側立體圖。 第3圖係本發明實施形態之研磨裝置之外觀立體圖。 20 第4圖係夾盤單元及夾盤進給機構之立體圖。 第5圖係從下側觀看之磨輪之立體圖。 第6圖係磨輪之縱截面圖。 第7圖係顯示本發明主要部份之方塊圖。 【主要元件符號說明】 13 200913040 2...研磨裝置 28··.座 4…殼體 30...磨輪 6…水平殼體部份 32…磨輪基台 8...垂直殼體部份 34...磨石 11...半導體晶圓 36...軟管 11a...表面 38...研磨水供給孔 lib".裡面 40...空間 12…引導軌道 42...研磨水供給喷嘴 13...切割道 44."研磨單位進給機構 14…引導軌道 46...滾珠螺桿 15...裝置 48...脈衝馬達 16…研磨單元 50...夾盤單元 17...裝置區域 52...支撐基台 18...移動基台 54...爽盤 19...外周剩餘區域 56…蓋 20…支撐部 58...夾盤移動機構 21".缺口 60…滾珠螺桿 22. ··心轴殼體 62...螺轴 23...保護帶 64...脈衝馬達 24...心轴 66...引導軌道 26...伺服馬達 68...引導軌道 14 200913040 70.. .蛇管 72.. .蛇管 74.. .第1晶圓匣盒 76.. .第2晶圓匣盒 78.. .晶圓搬送機構 80.. .晶圓暫時載置機構 82.. .晶圓搬入機構 84.. .晶圓搬出機構 86…洗淨機構 88…操作機構 90.. .洗淨水喷射喷嘴 94.. .拍攝裝置 95…刮痕檢測機構 96.. .影像處理裝置 98.. .二進制化處理部 100…刮痕判定部 102.. .方塊 104.. .晶圓洗淨步驟 106.. .方塊 108…刮痕去除步驟 110…刮痕檢測步驟 15BACKGROUND OF THE INVENTION BACKGROUND OF THE INVENTION Surface I is a device such as an E1C, an LSI, etc., and a semiconductor wafer in which each device is divided by a predetermined dividing line (cutting path) is used for grinding and grinding, and after adding a predetermined thickness to a predetermined thickness The cutting device cuts the pre-line and divides it into devices, and is used for electric phones, personal computers, and the like. The polishing device in the polishing wafer includes a chuck for holding the wafer, and a grinding wheel equipped with a grindstone for polishing and holding the wafer on the lost wafer, and the grinding wheel is rotated to supply the grinding water to the polishing region. The grinding water supply machine 15 is configured to process the wafer to a predetermined thickness. When the thickness of the wafer is less than 10 μm, or even as thin as 5 μmηη, the grinding deformation generated in the wafer becomes a cause of lowering the flexural strength of the device. In order to improve the flexural strength, it is removed by etching or the like. During the deformation, the degassing effect of the heavy metal floating inside the wafer on the inner side is eliminated, and the quality of the device is significantly reduced. In the Japanese Patent Laid-Open Publication No. 2006-1007, the present applicant proposes a ceramic grindstone which can suppress the polishing deformation and maintain the flexural strength while maintaining the degassing effect as a grinding stone for processing and polishing. [Patent Document 1] JP-A-2006-1007 5 200913040 SUMMARY OF THE INVENTION The present invention discloses a ceramic grinding machine disclosed in the patent document, and a polished wafer is ground with 5 sides, 40 to 50 pieces. There is a ratio of one wafer to the scratch-producing wafer, and there is a problem that the scratch-resistant portion of the wafer has a reduced scratch strength. The present invention has been made in view of the above, and an object thereof is to provide a polishing method and a polishing apparatus for a wafer without scratches. Means for Solving the Problem 10 According to the invention of claim 1, there is provided a method of polishing a wafer using a chuck including a holding wafer and a wafer having a polishing and holding on the chuck The grinding device of the grinding mechanism of the grinding wheel. The wafer polishing method detects whether the polished surface of the wafer is scratched by the scratch detection mechanism, and when the scratch is not detected, transfers the wafer to the next step, 15 and when the mark is detected, Continue grinding or scratch removal grinding. According to the invention of claim 2, the invention provides a method for polishing a wafer by using a chuck including a chuck for holding a wafer, a grinding wheel having a wafer held by the chuck, and a crystal A grinding device for a scratch detecting mechanism of a scratch generated by a round polished surface. The method of polishing the wafer 20 is performed after the wafer polishing step of grinding the wafer by the grinding wheel, and the scratch detecting step of detecting whether the polishing surface of the wafer is scratched by the scratch detecting mechanism is performed, and when the scratch is present, Performing the scratch removal removal polishing step 'after' is performed again to the mark detection step, and when the scratch is not detected from the polished surface of the wafer in the aforementioned detection step, the wafer is transferred to the next 200913040 step. According to the invention of claim 3, there is provided a polishing apparatus comprising a chuck for holding a wafer and a polishing mechanism having a grinding wheel for polishing the wafer held by the chuck, further comprising detecting the wafer The 5 to the trace detection mechanism generated by the abrasive surface. Further, the scratch detecting means preferably has an imaging means for capturing the polished surface of the wafer to obtain image information, a binarization processing means for binarizing the image captured by the imaging means, and information determined by the binarization processing means. Scratch scratch determination mechanism. According to the polishing method and polishing apparatus of the wafer of the present invention, the scratch is detected from the polished surface of the wafer, and when there is a scratch, the polishing is continued, or the scratch is removed, and the scratch is not caused. The wafer is transferred to the next step, so that the wafer can be produced with good efficiency. 5 [Last Mode] The best mode for carrying out the invention Hereinafter, a wafer grinding method and a polishing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. The second figure is a three-dimensional gj of the Japanese yen before processing to a predetermined thickness. The semiconductor wafer n shown in the figure is composed of a thickness of 7 〇〇 曰 a circle, and a plurality of lattice-shaped dicing streets 13 are formed on the surface, and at the same time, a plurality of regions divided by a plurality of dicing streets 13 form ICs and LSIs. And so on device 15. The semiconductor wafer thus constructed is referred to as a device region 17 in which the device 15 is formed, and a peripheral region remaining around the skirting region 17, for example. Further, on the outer periphery of the wafer 11 of the semiconductor 200913040, a mark indicating the crystal orientation of the germanium wafer is formed. The protective tape 23 is attached to the surface 11a of the semiconductor wafer U by the protective tape attaching step. Therefore, the surface 11a of the semiconductor wafer n can be protected by the tape 2, and as shown in Fig. 2, the Ub is exposed. The semiconductor device am thus constructed will be described below with reference to Fig. 3, in which the ub is polished to a predetermined thickness of the polishing apparatus 2. The housing 4 of the polishing apparatus 2 is composed of a horizontal housing portion 6 and a vertical housing portion 8. 10 15 is fixed to the vertical guide portion 8 in the up and down direction to the guide rails 12, 14. The polishing mechanism (polishing unit) 16 is attached in a state in which the pair of guiding rails 14 are moved in the vertical direction. The polishing unit 16 is attached to the moving base 18 that moves in the up and down direction along the pair of guiding rails 12, 14 by the branch portion 20. The polishing unit 16 has a spindle housing mounted to the support portion 2, a spindle 24 that is rotatably received in the core, the shaft housing 22, and a feeding motor 26 of the rotation_mandrel 24. As shown in Fig. 6, the front end of the mandrel 24 is fixed to the base 28, and the seat 28 is screwed to the grinding wheel 30. For example, the grinding wheel 3 is attached to the diamond base of the grinding wheel base. The diamond abrasive grains of the self-hardening of the grinding wheel are fixed by the end portion and the glass is sintered to form a plurality of grinding stones 34 having a particle diameter of 〜 3 to 1.0 #. The polishing water is supplied to the polishing mechanism (polishing unit) 16 by the hose 36. Pure water should be used for the grinding water. As shown in Fig. 6, the polishing water supplied from the hose % is supplied from the polishing water supply hole 38 formed in the mandrel 24, the space formed in the seat, and the plurality of grinding water supplies formed on the grinding wheel base 32 of the grinding wheel. The nozzle 20 200913040 42 is supplied to the grindstone 34 and the wafer u held on the chuck. Referring again to Fig. 3, the polishing apparatus 2 has a polishing unit feed mechanism for moving the polishing unit 16 in the vertical direction along the pair of guide rails C12 14. The grinding single π feed mechanism 44 is composed of a ball screw 46 and a pulse motor 48 fixed to one end of the ball screw. When the pulse motor 48 is pulse-driven, the ball screw 46 rotates, and the moving base 18 is moved in the up and down direction by the nut of the ball screw 46 fixed to the inside of the moving base 18. A chuck unit 5 is disposed in the recess 1 of the horizontal housing portion 6. As shown in Fig. 4, the chuck unit 50 has a support base 52 and a chuck 54 that is rotatably disposed on the support base 52. The chuck unit 5 has a cover 56 having a hole through which the chuck 54 is inserted. The disc loss unit 50 is moved rearward by the chuck moving mechanism 58 before the polishing apparatus 2. The chuck moving mechanism 58 is composed of a ball screw 60 and a pulse motor 64 coupled to the end of the screw shaft 62 of the ball screw 60. When the pulse motor 64 is pulse-driven, the screw shaft 62 of the ball screw 64 is rotated. The support base 52 having the nut screwed to the screw shaft 62 is moved in the front-rear direction of the grinding device 2. Therefore, the chuck 54 is also moved in the front-rear direction according to the rotation direction of the pulse motor 64. As shown in FIG. 3, one of the pair of guide rails 66, 68 and the clamp 2 disk moving mechanism 58 shown in FIG. 4 is a coil 70. Covered by 72. That is, the front end of the flexible tube 70 is fixed to the front wall of the partitioning recess 10, and the rear end portion is fixed to the front end surface of the cover 56. Further, the rear end of the flexible tube 72 is fixed to the vertical housing portion 8, and the front end is fixed to the rear end surface of the cover 56. The first wafer cassette 74 and the second crystal 9 are disposed in the horizontal casing portion 6 of the casing 4, and the wafer transfer machine is hung, the wafer temporary mounting mechanism 80, and the crystal are placed. The circular loading mechanism 82 and the wafer are moved to the ground. The mechanism 84 and the cleaning mechanism 86 are rounded. Further, an operating mechanism 88 such as a stamper, a member, a grinding condition, or the like is provided in front of the casing 4. A washing water spray for washing the chuck is provided at a center portion of the horizontal casing portion 6. This washing water jet (4) is positioned in the state where the wafer is carried in and out, and the washing water is sprayed toward the wafer which has been polished by the chuck 54. The chuck single tl5G is pulsed to drive the chuck moving mechanism% of the pulse motor 64, and the polishing area on the inner side of the apparatus shown in FIG. 3 and the wafer loading mechanism 1 〇 82 (four) wafer 'deliver the wafer to the wafer Move the wafer on the front side of the machine lion to move between the loading and unloading areas. An imaging device 94 having a ccd camera or the like is disposed above the carry-out area. The imaging device 94 captures the polished surface of the wafer to obtain image information. As shown in Fig. 7, the imaging device 94 and the image processing device 96 constitute a detecting means 95 for detecting the polishing surface to the mark. The image processing apparatus has a scratch determination unit 100 that determines the presence or absence of scratches by inputting a binary image binarization processing 邠98 of the image of the polishing surface of the imaging device 94 into a binarized value by the digitization processing unit 98. Hereinafter, the polishing operation of the polishing apparatus 2 configured as above will be described. The wafer accommodated in the first wafer cassette 74 is a semiconductor wafer on which the protective tape is mounted on the surface side (the side on which the circuit is formed). Therefore, the wafer is placed in the first state in the upper side.龛74. In this manner, the predetermined stack of the casing 4 of the first wafer cassette 74 in which the plurality of semiconductor wafers are housed is placed in the carry-in area. 200913040 Then, when the semiconductor wafer stored before the polishing process of the third wafer cassette 74 placed in the cassette loading area is completely removed, the empty wafer cassette 74' will contain a plurality of semiconductor wafers. The new 丨 wafer cassette% is manually placed in the cassette loading area. On the other hand, when a predetermined number of polished semiconductor wafers are transferred to the second wafer cassette 76, the second wafer cassette is inserted into the predetermined cassette carry-out area of the casing 4, The second wafer cassette 76 is carried out, and the new 76 is placed in the cassette carry-out area. The semiconductor wafer accommodated in the 101st wafer cassette 74 is placed on the wafer temporary mounting mechanism 80 by the upper and lower movements of the wafer transfer mechanism 78. After the wafers placed on the wafer dummy mounting mechanism 80 are center-aligned, the wafer loading mechanism 82 is rotated and placed on the chuck 54 of the chuck unit 50 located in the wafer loading/unloading area. The suction is held by the chuck 54. Thus, after the chuck 54 is attracted to hold the wafer, the chuck moving mechanism 58 is moved to move the chuck unit 54 to be positioned in the polishing area behind the device. When the rich central disk unit 50 is positioned in the polishing region, the center of the crystal circle held by the disk 54 is located slightly beyond the circumference of the grinding wheel 3〇. Then, 'the chuck 54 is rotated at about 1 to 300 rpm, and the servo motor 26' is driven to rotate the grinding wheel 30 at 4000 to 7000 rpm. At the same time, the pulse motor 48 of the grinding unit 20 feeding mechanism 44 is driven in the forward direction to be ground. Unit 16 is lowered. Then, as shown in Fig. 6, the grindstone 34 of the grinding wheel 30 is known to be pressed to the inside of the wafer 1 on the chuck 54 (the surface to be polished), and the inside of the wafer 11 is polished. By doing so, the wafer 11 is ground to a predetermined thickness by grinding for a predetermined time. 11 200913040 At the end of the polishing, the chuck moving mechanism 58 is driven to position the chuck 54 at the wafer loading/unloading area on the side of the apparatus. When the chuck 54 is positioned in the wafer loading/unloading area, the washing water is sprayed from the washing water spray nozzle 9 to wash and hold the polished surface (inside) of the wafer u that has been polished by the chuck 54. Next, the 吏 imaging device 94 is actuated to take a polished surface of the wafer to obtain an image of the polished surface. The image captured by the imaging device 94 is binarized by the binarization processing unit 98 of the image processing device 96 constituting the detection mechanism %. The output of the binarization processing unit 98 is output to the scratch determination unit to determine the presence or absence of scratches. 1〇&The polished surface after grinding forms a smooth mirror surface. Therefore, when the trace is formed on the polished surface for some reason, the scratch is brightened, so the image of the binarized image is the polished surface of the backlight. The value is different. Therefore, when the reflected light of the polished surface is binarized by a predetermined threshold value, the scratch-free polishing surface is 〇, and the scratch is "1,." 15 is determined by the scratch determination unit 100 as indicated by the block 102. When there is no scratch, the wafer cleaning step just shown in the block is performed. That is, after the suction holding of the wafer held by the chuck 54 is released, the wafer is transferred to the cleaning mechanism 86 by the wafer unloading mechanism 84. The wafer transferred to the cleaning mechanism 86 is washed and rotated 20 times. Then, the wafer transfer mechanism 78 stores the wafer in a predetermined position of the second crystal cassette. 1 As shown in block 106. When the scratch determination unit i 判定 determines that there is a scratch, the block immediately removes the scratch removal polishing step. That is, the plate moving mechanism 58 is driven to position the chuck 54 again in the polishing region to grind the wheel 3〇. The particle size is 12 200913040. The polishing is performed. The wafer after the polishing is repositioned by the chuck moving mechanism 58 to the loading/unloading area, and the scratch detecting step of the block 110 is performed. That is, the polishing surface of the wafer is again photographed by the device 94. The image processing device 96 has a binary processing unit 98 The captured image is binarized, and the scratch determination unit 100 determines whether or not there is a scratch according to the binary value. Then, when it is finally determined that there is no mark, the wafer cleaning step of the block 104 is performed. The polishing method and the polishing apparatus are not limited to the embodiments described above. For example, the image capturing device 94 of the scratch detecting mechanism 95 may be disposed adjacent to the chuck 54 positioned in the polishing region, and the detection and holding may be performed on the refreshing plate. 54 'Scratch on the polished surface of the wafer during polishing. According to this method, when the scratch is detected at the end of the polishing, the polishing is continued at a particle size of about l#m, and it is confirmed that the polishing is completed without scratching. The scratch detection mechanism can also be configured to obliquely illuminate the red laser light on the polished surface of the wafer to detect scattered light scattered by the scratch. [Slightly simple description] FIG. 1 is a semiconductor wafer Fig. 2 is a perspective view showing the inside of a semiconductor wafer to which a protective tape is attached. Fig. 3 is a perspective view showing the appearance of a polishing apparatus according to an embodiment of the present invention. 20 Fig. 4 is a chuck unit and chuck feeding Institutional Fig. 5 is a perspective view of the grinding wheel viewed from the lower side. Fig. 6 is a longitudinal sectional view of the grinding wheel. Fig. 7 is a block diagram showing the main part of the invention. [Description of main components] 13 200913040 2. Grinding device 28··. Seat 4... Housing 30... Grinding wheel 6... Horizontal housing part 32... Grinding wheel base 8... Vertical housing part 34... Millstone 11...Semiconductor crystal Round 36...Hose 11a...Surface 38...Pulverizing water supply hole lib". Inside 40...Space 12... Guide rail 42... Grinding water supply nozzle 13...Cutting path 44." Grinding unit feed mechanism 14...guide rail 46...ball screw 15...device 48...pulse motor 16...grinding unit 50...chuck unit 17...device area 52...support base Table 18...moving base 54...song plate 19...outer peripheral remaining area 56...cover 20...supporting portion 58...chuck moving mechanism 21".notch 60...ball screw 22.··mandrel Housing 62... screw shaft 23... guard belt 64...pulse motor 24...spindle 66...guide rail 26...servomotor 68...guide rail 14 200913040 70.. . Snake tube 72.. . Snake tube 74.. . 1st wafer cassette 76.. . 2nd wafer cassette 78.. wafer transfer mechanism 80.. wafer temporary placement mechanism 82.. wafer loading mechanism 84.. wafer removal mechanism 86... cleaning mechanism 88 ...operating mechanism 90.. washing water jet nozzle 94.. imaging device 95...scratch detecting mechanism 96.. image processing device 98.. binarization processing unit 100...scratch determining unit 102.. 104.. Wafer cleaning step 106.. Block 108...Scratch removal step 110...Scratch detection step 15