TW200910654A - Optical designs for high-efficacy white-light emitting diodes - Google Patents

Optical designs for high-efficacy white-light emitting diodes Download PDF

Info

Publication number
TW200910654A
TW200910654A TW097124429A TW97124429A TW200910654A TW 200910654 A TW200910654 A TW 200910654A TW 097124429 A TW097124429 A TW 097124429A TW 97124429 A TW97124429 A TW 97124429A TW 200910654 A TW200910654 A TW 200910654A
Authority
TW
Taiwan
Prior art keywords
led
light
wled
phosphor
cup
Prior art date
Application number
TW097124429A
Other languages
English (en)
Chinese (zh)
Inventor
Frederic S Diana
Steven P Denbaars
Shuji Nakamura
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Publication of TW200910654A publication Critical patent/TW200910654A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Led Device Packages (AREA)
TW097124429A 2007-06-27 2008-06-27 Optical designs for high-efficacy white-light emitting diodes TW200910654A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94665207P 2007-06-27 2007-06-27

Publications (1)

Publication Number Publication Date
TW200910654A true TW200910654A (en) 2009-03-01

Family

ID=40159305

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124429A TW200910654A (en) 2007-06-27 2008-06-27 Optical designs for high-efficacy white-light emitting diodes

Country Status (5)

Country Link
US (4) US7868341B2 (enExample)
JP (1) JP2010532104A (enExample)
KR (1) KR101623422B1 (enExample)
TW (1) TW200910654A (enExample)
WO (1) WO2009003176A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959325A (zh) * 2010-06-24 2013-03-06 英特曼帝克司公司 基于led的发光系统及装置
CN103307479A (zh) * 2012-03-08 2013-09-18 Lg伊诺特有限公司 照明器件
US8946998B2 (en) 2010-08-09 2015-02-03 Intematix Corporation LED-based light emitting systems and devices with color compensation

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412926B2 (en) * 2005-06-10 2016-08-09 Cree, Inc. High power solid-state lamp
TW201448263A (zh) 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
KR100880638B1 (ko) * 2007-07-06 2009-01-30 엘지전자 주식회사 발광 소자 패키지
WO2009015386A1 (en) 2007-07-26 2009-01-29 The Regents Of The University Of California Light emitting diodes with a p-type surface
US11114594B2 (en) * 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US9287469B2 (en) * 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
KR20110028307A (ko) * 2008-05-29 2011-03-17 크리 인코포레이티드 근거리장 영역 혼합을 갖는 광원
KR101438826B1 (ko) * 2008-06-23 2014-09-05 엘지이노텍 주식회사 발광장치
US7828453B2 (en) * 2009-03-10 2010-11-09 Nepes Led Corporation Light emitting device and lamp-cover structure containing luminescent material
CN102422082A (zh) * 2009-05-08 2012-04-18 奥斯兰姆施尔凡尼亚公司 Led光引擎及其制造方法
JP5555318B2 (ja) * 2009-06-04 2014-07-23 コーニンクレッカ フィリップス エヌ ヴェ 効率の高い発光デバイス及び斯様なデバイスを製造する方法
US8168998B2 (en) * 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount
US8217567B2 (en) * 2009-06-11 2012-07-10 Cree, Inc. Hot light emitting diode (LED) lighting systems
KR100963743B1 (ko) * 2009-06-23 2010-06-14 한국광기술원 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법
US8186852B2 (en) 2009-06-24 2012-05-29 Elumigen Llc Opto-thermal solution for multi-utility solid state lighting device using conic section geometries
US20110057557A1 (en) * 2009-09-08 2011-03-10 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Projection led module and method of making a projection led module
US8779685B2 (en) * 2009-11-19 2014-07-15 Intematix Corporation High CRI white light emitting devices and drive circuitry
US8203161B2 (en) * 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
JP5340191B2 (ja) * 2010-02-02 2013-11-13 日東電工株式会社 光半導体装置
KR20110094996A (ko) * 2010-02-18 2011-08-24 엘지이노텍 주식회사 발광소자 패키지, 그 제조방법 및 조명시스템
US8420415B2 (en) * 2010-03-02 2013-04-16 Micron Technology, Inc. Method for forming a light conversion material
US9062830B2 (en) 2010-03-03 2015-06-23 Cree, Inc. High efficiency solid state lamp and bulb
US8562161B2 (en) 2010-03-03 2013-10-22 Cree, Inc. LED based pedestal-type lighting structure
US20110227102A1 (en) * 2010-03-03 2011-09-22 Cree, Inc. High efficacy led lamp with remote phosphor and diffuser configuration
US9275979B2 (en) * 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US9057511B2 (en) 2010-03-03 2015-06-16 Cree, Inc. High efficiency solid state lamp and bulb
US9310030B2 (en) * 2010-03-03 2016-04-12 Cree, Inc. Non-uniform diffuser to scatter light into uniform emission pattern
US9500325B2 (en) * 2010-03-03 2016-11-22 Cree, Inc. LED lamp incorporating remote phosphor with heat dissipation features
US8931933B2 (en) * 2010-03-03 2015-01-13 Cree, Inc. LED lamp with active cooling element
US8882284B2 (en) 2010-03-03 2014-11-11 Cree, Inc. LED lamp or bulb with remote phosphor and diffuser configuration with enhanced scattering properties
US10359151B2 (en) 2010-03-03 2019-07-23 Ideal Industries Lighting Llc Solid state lamp with thermal spreading elements and light directing optics
US9625105B2 (en) * 2010-03-03 2017-04-18 Cree, Inc. LED lamp with active cooling element
US9316361B2 (en) 2010-03-03 2016-04-19 Cree, Inc. LED lamp with remote phosphor and diffuser configuration
US8632196B2 (en) 2010-03-03 2014-01-21 Cree, Inc. LED lamp incorporating remote phosphor and diffuser with heat dissipation features
US9024517B2 (en) 2010-03-03 2015-05-05 Cree, Inc. LED lamp with remote phosphor and diffuser configuration utilizing red emitters
US8350453B2 (en) * 2010-05-25 2013-01-08 Nepes Led Corporation Lamp cover including a phosphor mixed structure for light emitting device
US8461609B2 (en) 2010-05-26 2013-06-11 Lg Innotek Co., Ltd. Light emitting device package
JP2012009719A (ja) * 2010-06-28 2012-01-12 Kyocera Corp 発光装置および照明装置
US10451251B2 (en) 2010-08-02 2019-10-22 Ideal Industries Lighting, LLC Solid state lamp with light directing optics and diffuser
US9373606B2 (en) 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
US8937324B2 (en) * 2010-08-30 2015-01-20 Bridgelux, Inc. Light-emitting device array with individual cells
WO2012052063A1 (de) * 2010-10-22 2012-04-26 Osram Ag Led-lichtquelle und zugehörige baueinheit
JP5733743B2 (ja) * 2010-12-15 2015-06-10 日東電工株式会社 光半導体装置
WO2012091971A1 (en) 2010-12-29 2012-07-05 3M Innovative Properties Company Remote phosphor led constructions
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
CN103415739B (zh) 2010-12-30 2015-03-04 伊路米根有限责任公司 具有光源和邻接光管的灯组件
US9234655B2 (en) 2011-02-07 2016-01-12 Cree, Inc. Lamp with remote LED light source and heat dissipating elements
US9068701B2 (en) 2012-01-26 2015-06-30 Cree, Inc. Lamp structure with remote LED light source
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US20140140069A1 (en) * 2011-02-24 2014-05-22 Philip Premysler Led illumination assemblies including partial lenses and metal reflectors
KR101906863B1 (ko) 2011-03-07 2018-10-11 루미리즈 홀딩 비.브이. 발광 모듈, 램프, 조명기구 및 표시 디바이스
KR101210163B1 (ko) * 2011-04-05 2012-12-07 엘지이노텍 주식회사 광학 시트 및 이를 포함하는 표시장치
EP3828606B1 (en) 2011-04-28 2025-11-19 L.E.S.S. Ltd Waveguide apparatus for illumination systems
US8637877B2 (en) 2011-05-05 2014-01-28 Cree, Inc. Remote phosphor light emitting devices
TW201246615A (en) * 2011-05-11 2012-11-16 Siliconware Precision Industries Co Ltd Package structure and method of making same
BR112013031560A2 (pt) 2011-06-09 2016-12-13 Elumigen Llc dispositivo de iluminação de estado sólido com o uso de canais em um alojamento
US20130051048A1 (en) * 2011-08-25 2013-02-28 Code 3, Inc. Light head with phosphor impregnated light optic and method
US9082349B2 (en) * 2011-08-30 2015-07-14 Sharp Laboratories Of America, Inc. Multi-primary display with active backlight
FR2981506B1 (fr) * 2011-10-18 2014-06-27 Commissariat Energie Atomique Composant diode electroluminescente
US20130100641A1 (en) * 2011-10-25 2013-04-25 Marcus Zhang LED Lamp
CN102518964A (zh) * 2011-12-11 2012-06-27 深圳市光峰光电技术有限公司 光源和照明装置
US9570883B2 (en) * 2011-12-28 2017-02-14 Intel Corporation Photonic package architecture
US20130187534A1 (en) * 2012-01-20 2013-07-25 Remphos Technologies Llc Phosphorized kernels for remote phosphor led
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US10463815B2 (en) * 2012-02-21 2019-11-05 Respira Therapeutics, Inc. Inhaler to deliver substances for prophylaxis or prevention of disease or injury caused by the inhalation of biological or chemical agents
EP2639491A1 (en) * 2012-03-12 2013-09-18 Panasonic Corporation Light Emitting Device, And Illumination Apparatus And Luminaire Using Same
WO2013137761A1 (ru) * 2012-03-15 2013-09-19 Общество С Ограниченной Ответственностью "Инфолед" Светодиод
US9488359B2 (en) 2012-03-26 2016-11-08 Cree, Inc. Passive phase change radiators for LED lamps and fixtures
CN103378263A (zh) * 2012-04-27 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US10384023B2 (en) * 2012-08-03 2019-08-20 Breathe Technologies, Inc. Selective ramping of therapeutic pressure in a patient breathing apparatus
US9574728B2 (en) 2012-08-30 2017-02-21 The Regents Of The University Of California Laser-driven white lighting system for high-brightness applications
US9490240B2 (en) 2012-09-28 2016-11-08 Intel Corporation Film interposer for integrated circuit devices
KR102015907B1 (ko) 2013-01-24 2019-08-29 삼성전자주식회사 반도체 발광소자
US20140209950A1 (en) * 2013-01-31 2014-07-31 Luxo-Led Co., Limited Light emitting diode package module
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US10295124B2 (en) * 2013-02-27 2019-05-21 Cree, Inc. Light emitter packages and methods
US9423083B2 (en) * 2013-03-07 2016-08-23 Pacific Light Technologies, Corp. Multiple quantum dot (QD) device
EP3058268B1 (en) 2013-10-18 2020-12-30 L.E.S.S. Ltd Waveguide-based illumination apparatus
JP6383539B2 (ja) * 2014-01-14 2018-08-29 アルパッド株式会社 発光装置
WO2015119858A1 (en) 2014-02-05 2015-08-13 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9360188B2 (en) 2014-02-20 2016-06-07 Cree, Inc. Remote phosphor element filled with transparent material and method for forming multisection optical elements
CN106463591A (zh) 2014-06-02 2017-02-22 3M创新有限公司 带有远程荧光粉和外壳反射器的led
US9651219B2 (en) 2014-08-20 2017-05-16 Elumigen Llc Light bulb assembly having internal redirection element for improved directional light distribution
WO2016079658A1 (en) * 2014-11-18 2016-05-26 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
EP3237574B1 (en) * 2014-12-24 2019-03-13 Koninklijke Philips N.V. Phosphor converted led
US9947844B1 (en) * 2015-04-10 2018-04-17 Rayvio Corporation Package for ultraviolet emitting devices
CN106299084B (zh) * 2016-08-30 2018-10-16 开发晶照明（厦门）有限公司 Led封装结构
US10619828B2 (en) 2016-11-16 2020-04-14 Qtran, Inc. Bendable LED lighting fixture
JP7333781B2 (ja) * 2018-02-20 2023-08-25 ルミレッズ ホールディング ベーフェー 閉じ込め式光変換器を含む光変換装置
US20190267525A1 (en) 2018-02-26 2019-08-29 Semicon Light Co., Ltd. Semiconductor Light Emitting Devices And Method Of Manufacturing The Same
RU184953U1 (ru) * 2018-04-06 2018-11-15 федеральное государственное бюджетное образовательное учреждение высшего образования "Московский политехнический университет" (Московский Политех) Лазерное осветительное устройство
US11417806B2 (en) * 2018-07-30 2022-08-16 Lumileds Llc Dielectric mirror for broadband IR LEDs
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
EP4406858A1 (en) 2023-01-24 2024-07-31 Goodrich Lighting Systems GmbH & Co. KG Aircraft light, aircraft comprising an aircraft light, and method of manufacturing an aircraft light
WO2025006259A1 (en) * 2023-06-27 2025-01-02 Lumileds Llc Ultra-broadband infrared emitter

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319425B1 (en) 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US5962971A (en) 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP2907286B1 (ja) 1998-06-26 1999-06-21 サンケン電気株式会社 蛍光カバーを有する樹脂封止型半導体発光装置
US6155699A (en) 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
US6357889B1 (en) 1999-12-01 2002-03-19 General Electric Company Color tunable light source
JP2002008425A (ja) * 2000-06-21 2002-01-11 Fujitsu Ltd バックライトユニット
US6655810B2 (en) * 2000-06-21 2003-12-02 Fujitsu Display Technologies Corporation Lighting unit
US7058000B2 (en) 2000-12-08 2006-06-06 Sony Corporation Information recording disc having an anti-reflection layer and information recording/reproducing apparatus
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP2003051622A (ja) * 2001-08-07 2003-02-21 Rohm Co Ltd 白色系半導体発光装置
JP2004031843A (ja) 2002-06-28 2004-01-29 Kyocera Corp 発光ダイオ−ド
ATE448571T1 (de) 2002-08-30 2009-11-15 Lumination Llc Geschichtete led mit verbessertem wirkungsgrad
US7036946B1 (en) 2002-09-13 2006-05-02 Rockwell Collins, Inc. LCD backlight with UV light-emitting diodes and planar reactive element
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
US6917057B2 (en) 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
US7157839B2 (en) 2003-01-27 2007-01-02 3M Innovative Properties Company Phosphor based light sources utilizing total internal reflection
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
KR20040092512A (ko) 2003-04-24 2004-11-04 (주)그래픽테크노재팬 방열 기능을 갖는 반사판이 구비된 반도체 발광장치
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
JP4565541B2 (ja) 2003-10-31 2010-10-20 日本発條株式会社 識別媒体および識別対象物品
JP2005159035A (ja) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び発光装置
US20050156510A1 (en) 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US7611641B2 (en) 2004-02-20 2009-11-03 Koninklijke Philips Electronics N.V. Illumination system comprising a radiation source and a fluorescent material
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
JP2006186022A (ja) * 2004-12-27 2006-07-13 Toyoda Gosei Co Ltd 発光装置
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
JP5109226B2 (ja) * 2005-01-20 2012-12-26 豊田合成株式会社 発光装置
CN100403563C (zh) 2005-04-18 2008-07-16 光宝科技股份有限公司 白光发光二极管元件及相关荧光粉与制备方法
JP3978451B2 (ja) * 2005-07-27 2007-09-19 京セラ株式会社 発光装置
JP2007059864A (ja) * 2005-07-29 2007-03-08 Toshiba Lighting & Technology Corp 照明装置および発光ダイオード装置
JP3982561B2 (ja) 2005-09-09 2007-09-26 松下電工株式会社 Ｌｅｄ照明装置
JP2007109947A (ja) * 2005-10-14 2007-04-26 Toyoda Gosei Co Ltd 蛍光体板及びこれを備えた発光装置
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959325A (zh) * 2010-06-24 2013-03-06 英特曼帝克司公司 基于led的发光系统及装置
US8946998B2 (en) 2010-08-09 2015-02-03 Intematix Corporation LED-based light emitting systems and devices with color compensation
CN103307479A (zh) * 2012-03-08 2013-09-18 Lg伊诺特有限公司 照明器件
US9303844B2 (en) 2012-03-08 2016-04-05 Lg Innotek Co., Ltd. Lighting device combining a lens unit

Also Published As

Publication number Publication date
KR20100028047A (ko) 2010-03-11
US9515240B2 (en) 2016-12-06
US20090001399A1 (en) 2009-01-01
US20160079499A1 (en) 2016-03-17
US9219205B2 (en) 2015-12-22
WO2009003176A1 (en) 2008-12-31
JP2010532104A (ja) 2010-09-30
KR101623422B1 (ko) 2016-05-23
US7868341B2 (en) 2011-01-11
US20110089455A1 (en) 2011-04-21
US20140091349A1 (en) 2014-04-03
US8624281B2 (en) 2014-01-07

Similar Documents

Publication Publication Date Title
TW200910654A (en) Optical designs for high-efficacy white-light emitting diodes
EP3357097B1 (en) Low optical loss flip chip solid state lighting device
TWI550910B (zh) Semiconductor light emitting device
US9859464B2 (en) Lighting emitting diode with light extracted from front and back sides of a lead frame
US9287469B2 (en) Encapsulation for phosphor-converted white light emitting diode
TWI854463B (zh) 用於電流注入之led晶片的接觸結構
US20120193660A1 (en) Horizontal light emitting diodes including phosphor particles
JP2009518874A (ja) 高効率発光ダイオード（ｌｅｄ）
TW201115790A (en) Wavelength-converted semiconductor light emitting device including a filter and a scattering structure
TW202339309A (zh) 多晶片發光二極體封裝件的配置
KR20160143984A (ko) 광학 소자 및 이를 포함하는 광원 모듈
KR102409961B1 (ko) 광학소자 및 이를 포함하는 발광소자 패키지
US9117988B2 (en) Light-emitting device
TWI851179B (zh) 具有用於發光二極體晶片的覆晶安裝的引線框架結構之發光二極體封裝件