TW200908306A - Image sensor package and fabrication method thereof - Google Patents

Image sensor package and fabrication method thereof Download PDF

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Publication number
TW200908306A
TW200908306A TW096129207A TW96129207A TW200908306A TW 200908306 A TW200908306 A TW 200908306A TW 096129207 A TW096129207 A TW 096129207A TW 96129207 A TW96129207 A TW 96129207A TW 200908306 A TW200908306 A TW 200908306A
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Taiwan
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substrate
image sensing
package
trench
layer
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TW096129207A
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TWI345830B (en
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Wen-Cheng Chien
Wang-Ken Huang
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Xintec Inc
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Priority to TW096129207A priority Critical patent/TWI345830B/zh
Priority to US11/987,228 priority patent/US20090039455A1/en
Publication of TW200908306A publication Critical patent/TW200908306A/zh
Priority to US12/565,470 priority patent/US20100013080A1/en
Priority to US12/753,519 priority patent/US8772919B2/en
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Publication of TWI345830B publication Critical patent/TWI345830B/zh
Priority to US14/325,812 priority patent/US9190362B2/en

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200908306 九、發明說明： 【發明所屬之技術領域】 本發明係有關於影像感測元件的封裝體，特別是一 種具有溝槽絕緣層（trench isolation)之影像感測元件的封 裝體及其製作方法。 【先前技術】 光感測積體電路（sensor integrated circuit)在擷取影 像的光感測元件中係扮演者重要的角色〃這些積體電路 元件均已廣泛地應用於例如是數位相機（digital camera)、數位攝錄像機（digital video recorder))和手機 (mobile phone)等的消費電子元件和攜帶型電子元件中。 隨著上述各種電子元件及攜帶式電子元件愈來愈普及與 輕巧化，使得影像感測元件封裝體的尺寸也愈來愈縮小 化。 第1圖顯示一種習知之影像感測元件封裝體1的剖 面圖。在第1圖中，提供一基底2,且此基底2上方形成 有影像感測元件4以及一延伸的接合墊6。接著，一蓋板 8設置於上述基底2的上方。又如第1圖所示，將上述基 底2貼附於一承載板14上。之後，一導電層10形成於 承載板14的背面上方且延伸於承載板14的侧壁上方， 以電性連接上述延伸接合墊6與一焊料球體12。由於上 述基底2及承載板14皆具有一即定厚度，使得影像感測 元件封裝體具有較大的厚度及尺寸。再者，在習知的影 9002-A33097TWF/yungchieh 6 200908306 ^(象感測元件封P興ύ 、 感測元件封裝體的 層w係設置於靠近影像 中很容易地遭受損傷I使得導電層10在製作過程 測元件封裝體失效。α切利步驟，而導致影像感 裝二:方需:種可解決上述問題的影像感測元件^ 【發明内容】 元件trb’本發明之第—目的係提供—種影像感測 上4影像感測元件封裝體，包含上方形成 :::::測r及-金屬層"底…在= 、、盖肿 ¥通孔’電性連接上述金屬層。此外，- ，s、’、巴緣層形成於對應上述金屬層下方的基底之中 ，繞上述導通孔。—焊料球體形成於上述基底的背面 ’且電性連接影像感測元件。上述影像感測元件 匕含一蓋板，其設置於上述基底的上方。 本發明之第二目的係提供一種影像感測元件封壯 體。此影像感測元件封裝體’包含一上方形成有 ： 感測元件的基底，且上述影像感測元件電性連接 層。複數個溝槽絕緣層，形成於該基底之中。而且， 述各溝槽絕緣層係圍繞一部分的基底，以形成一隔離= 域。一導通孔，形成於上述隔離區域内的基底之中，二 黾性連接金屬層。上述影像感測元件封裝體，更包含— 焊料球體，且藉由導通孔電性連接影像感測元件。H， 7 9002-A33097TWF/yungchieh 200908306 上述影像感測元件封裝體，更接合一蓋板於基底上。在 上述影像感測元件封裝體中，由於焊料球體可藉由形成 於隔離區域内的導通孔，電性連接影像感測元件，使得 衫像感測元件的訊號可藉由金屬層及導通孔傳導至外 部，而不需繞過形成影像感測元件之基底的外側。因此， 可縮短影像感測元件的訊號傳導路徑。 ，本發明之第三目的係提供一種影像感測元件封裝體 的製作方法。上述影像感測元件封裝體的製作方法，包 括提供上方形成有一影像感測元件及一金屬層的一基 ，。接著，接合一蓋板於基底上。之後，由基底的背面， 薄化該基底。形成一溝槽絕緣層於該基底之中，且此溝 槽絕緣層會圍繞一部分的基底，以形成一隔離區域。接 著形成導通孔於該隔離區域内的基底之中，且電性 連接該金屬層。之後，形成—焊料球體於該基底的一背 面^，^電性連接上述影像感測㈣。在上述影像感測 體的製作方法中，由於上述基底會經—薄化步 =戶使Π減少後續形成之影像感測元件封裝體的 十各度。因此，也可以縮小影像感測元件封裝體的尺 "T 〇 【實施方式] 圖式施例並配合圖式以詳細說明本發明，在 圖=相似或相同部份係使用相同之符㈣ 中焉施例之形狀或厚度可擴大，以簡化或是方便 9〇〇2-A33097TWF/yungchieh 8 200908306 標示。圖式中元件之部份將以描述說明之。可了解的是， 未繪示或描述之元件，可以是具有各種熟習該項技藝者 所知的形式。 第2-7圖係顯示根據本發明實施例之製作一種影像 感測元件封裝體的示意圖。雖然，本發明係以製作影像 感測元件的具體實施例作為說明。可以了解的是，本發 明概念當然也可以應用於其它半導體元件的製作。在第8 圖係顯示根據本發明之一實施例的製作流程圖。 在第2圖中，提供例如是矽材質的一基底1〇2，且在 上述基底102上方形成有影像感測元件（image sensor)〗04 及金屬層106。在一實施例中，利用例如一互補式金屬氧 化物半導體（complementary metal-oxide semiconductor; CMOS)製程，形成上述影像感測元件104。接著，利用一 金屬化製程（metallization process)，形成上述金屬層106 於上述基底102上方，且電性連接此影像感測元件104。 上述影像感測元件104可以是金屬氧化物半導體元 件或電荷耦合元件（charge-coupled device; CCD)。且，上 述金屬層 106 可以是銅（copper; Cu)、I呂（aluminum; A1) 或鎢（tungsten; W)。 值得注意的是，雖然圖式中的金屬層106僅以單層 表示。可以了解的是，上述金屬層106可以是代表一内 連線結構（interconnection structure)，其包含多層金屬層 夾置介電層，且每一金屬層間以金屬插塞電性連接。在 上述内連線結構的實施例中，最底層的金屬層可以是直 9002-A33097TWF/yungchieh 9 200908306 ΐ:成於基底上’而最頂層的金屬層可以是堆最於最底 層的金屬層上方，且電性連接影像感測元件。且；取底 如第3圖所示，設置一蓋板1〇8於上述基底1 在一實施例中，形成例如是" 上 ^rrnnl .废例如疋％虱樹知（印〇巧）、聚醯亞胺 於日…yimi e，PI)、光阻（Photoresist)材料的支撐部11〇 於上述蓋板108上。接菩，淨^θ八_^_ ^ 接者塗佈例如疋含有環氧樹脂的 者心12於上述支撐部㈣上後，將此蓋才反⑽接合 於上述基底102的上方，以$ # pa r 1 口 溆I产1Λ 以形成一間隙114於蓋板108 「土 & 2之間。上迭蓋板1()8較佳可以是破璃、石英 (quartz)或其它合適材質的透明基板。此外，上述蓋板⑽ 也可以是例如聚自旨類(pQlyestei〇的高分子材料。 、在另一貫施例中（圖未顯示），也可以將支撐部11〇形 成於基底102上，接著，塗佈黏著劑112於支撐部ιι〇 的上方。之後，設置上述蓋板1〇8於支撐部1忉上方， 以接合蓋板108於基底1〇2上。 在^完成上述接合步驟後，接著，薄化上述基底1〇2。 在一貫施例中，利用例如是化學機械研磨（chemicai mechamca〗 polishing)法的方式，對此基底1〇2的背面進 行研磨步驟，以薄化基底1G2至―合適的厚度。在薄化 步驟後，基底102的厚度較佳可以是小於15〇微米。 在7L成上述薄化步驟之後，接著，對基底1〇2的背面進 仃一刻痕（notching)步驟，以形成溝槽116於基底1〇2之 中’如第4圖所示。 在第4圖中’接著，形成一溝槽絕緣層（打如沾 9002-A33097TWF/yungchieh 200908306 isolation)】22於上述基底102之中。在一實施例中，藉由 一乾式钱刻（dry-etching)步驟，蝕刻基底102的背面，以 形成一溝槽118於此基底102之中，且溝槽118係圍繞 一部分的基底102。接著，沈積例如是氧化矽（siiic〇n oxide)、氮化矽（silicon nitride)、氮氧化矽（silic〇n oxynitride)或其它合適之絕緣材料的絕緣層12〇於基底 102的背面上，且此絕緣層120更延伸至溝槽1丨8之中， 以形成一溝槽絕緣層122,及一由溝槽絕緣層122所圍繞 的隔離區域（isolation region)119。可以了解的是，在進行 上述乾蝕刻步驟前，可以是先形成圖案化光阻（圖未顯示） 於基底102的背面上，以遮蔽部分基底1〇2，以及暴露欲 移除的部分基底102。 在另一實施例中，也可以利用雷射鑽孔（laser办⑴） 的方式，形成溝槽118之後，接著，再形成絕緣層12〇 於溝槽118之中’以形成上述溝槽絕緣層122及隔離區 域119於基底1〇2之中。值得注意的是，上述溝槽絕緣 層122所圍繞的隔離區域119係位於對應金屬層⑽下 方的基底102。 在第5圖中，接著，形成一導通孔（viahole)128於上 述隔離區域119内的基底1〇2之卜在—實施例中，首 先，移除部分覆蓋隔離區域119㈣絕緣層—，以暴露 隔離區域19 9内之其@ 1 η 〇人人士 之基底102的表面。接著，利用例如是 =刻、雷射鑽孔或其它合適的方式，形[孔洞⑶ 於隔離區域m内的基底1G2之中。之後，形成__導電 9002-A33097丁 WF/yungchieh 11 200908306 層126於上述基底102的背面上，且此導電層126更延 伸至上述孔洞124之中，以形成與金屬層106電性連接 的導通孔128。值得注意的是，上述溝槽絕緣層122係圍 繞此導通孔128，以隔離此導通孔128。 在一實施例中，形成上述導電層126的方式，可以 是是利用例如是藏鐘（sputtering)、蒸鍍（evaporating)、電 鍍（electroplating)或無電鑛（electroless plating)的方式，順 應性地形成一例如是IS (aluminum)、銅（copper)或鎳 (nickel)的導電材料層（圖未顯示）於基底102的背面上， 且此導電材料層更延伸至孔洞124之中，以電性連接金 屬層106。接著，使用一微影及I虫刻（photolithography/ etching)製程，圖案化上述導電材料層，以形成上述導電 層126及導通孔128。值得注意的是，藉由上述圖案化導 電材料層的步驟，可重新佈局（redistributed process)後續 形成之影像感測元件封裝體的訊號傳導路線。 第6圖顯示在第5圖中之影像感測元件封裝體之基 底背面的正視圖。在第6圖中’省略部分在第5圖中已 完成的元件，以清楚地及簡化地說明。如第6圖所示， 溝槽116係將基底102劃分為多數個晶粒。在每一晶粒 内包含有形成影像感測元件1 〇4(如第5圖所示）的影像感 測元件區域130，如第6圖的虚線所示。此外，在上述影 像感測元件區域130外圍的區域係形成有溝槽絕緣層 122、隔離區域119及導通孔128。在第6圖中，溝槽絕 緣層122會圍繞上述隔離區域119,且上述導通孔128係 9002-A33097TWF/yungchieh 12 200908306 形成於隔離區域Π9内的基底102之中。也就是說，溝 槽絕緣層]22不但圍繞隔離區域119,同時也圍妓導通孔 128 ，。 兀 值得注意的是，在第6圖中，雖然僅顯示少數個溝 槽絕緣層〗22及導通孔〗28，可以了解的是，溝槽絕緣層 22及‘通孔128係圍繞上述影像感測元件區域13〇。另 外，在第6圖中，溝槽絕緣層122所圍繞之隔離區域ιι9 的外型係呈一矩形，然而，溝槽絕緣層m所圍繞之隔 的外型也可以是圓形。也就是說，溝槽絕緣 層122與導通孔128係呈一同心圓。 ，第7圖中，接著’塗部阻桿膜]32於基底搬的 月，覆盖部分導電層126，且圖案化此阻 以暴露部分導電声】％。々& ,, ' 1?, Β .." 之後，形成一焊料球體134於導 署看】26，且藉由導i甬$ 〜¥通孔】28電性連接金屬層m。在-只轭例中，在形成阻焊膜132 導電層126上。接著，、隹― 」布㈣於暴露的 上述焊料球體134。在宗# μ、+. & ， 以形成 r λ 隹凡成上述步驟後，利用一切判刀Ρ (cutter)沿著個別晶|沾π丄 J 口J刀片 办$ 一 n、 〃的預切刮線切割成個別晶粒，以 -成-衫像感測元件封裝體b 中，也可以是藉由史為衣作在另—貫施例 男饴式、日丨-批 &蝕刻的方式切割個別晶粒，以&忐 衫像感測7L件封裝體的製作。 凡成 第7圖顯示根據本 體150的剖面圖。在;例之影像感測元件封裝 感測元件104及金屬居圖中*供—上方形成有影像 蜀層106的基底102。在此基底1〇2之 9002-A33097TWF/yungchieh 13 200908306 中，形成有一溝槽絕緣層122，且此溝槽絕緣層122圍繞 部分的基底102’以形成一隔離區域119。如第7圖所示^ 一導通孔128形成於上述隔離區域119之中，且電性連 接金屬層106及一後續形成的焊料球體134。之後，—蓋 板108設置於基底1 〇2的上方。 ί % 根據本發明實施例之影像感測元件封裝體，由於導 電層係電性連接形成於隔離區域内的導通孔。使得影像 感測元件的訊號可藉由金屬|、導通孔及導電層傳導至 外部，而不需繞過形成影像感測元件之基底的外側。因 此，可縮短影像感測元件的訊號傳導路徑。另外，由於 訊號傳導路徑不需形成於影像感測元件封裝體的外側， 因此，也可降低導電層於製作過程中損傷的問題。 第8圖顯示根據本發明實施例之製作—影像感測元 件封裝體的流程圖。在第8圖中，首先，提供上方形成 影像感:則元件及一金屬層的一基底，如步驟％ ;接 著:、接合-蓋板於上述基底上’如步驟sl〇 ;之後，薄化 上，基底’如步驟S15 ;接|，形成—溝槽絕緣層於基底 之中’且此溝槽絕緣層圍繞部分基底，以形成-隔離區 域，如步驟S20 ;然後，形成一導通孔於上述隔離區域内 :基底之中，如步驟S25 ;之後，形成—焊料球體於上述 ς底的背面上’且藉由上述導通孔電性連接影像感測元 ^如步S30;最後’進行一切割㈣，以完成影像感測 兀件封裝體，如步驟S35。 值持庄思的疋，由於上述基底會經一薄化步驟處 9〇〇2-A33〇97TWF/yungchieh 14 200908306 理，使得可減少後續形 厚度。因此，根據本發明^感^件封裝體的整體 封裝體具有相對較小的尺；二衣作的影像感測元件 ^ , ra. u π十 及白知預先分離晶片的蝕刻步 2，Λ 化影像感測元件封裝體的製作流輕。 柄明已以較佳實施例揭露如上，《並非用 ㈣定本發明’任㈣fltb技藝者’在不脫離本發明之 精神和範圍内’當可作此許之更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定為準。 9002-A33097TWF/yungchieh 15 200908306 【圖式簡單說明】 接下來’將配合附圖說明，使得可更加了解本發明 的具！實施方式及優點，其中： 第1圖顯示一種習知之影像感測元件封裝體的剖面 圖； 、第2-7圖顯示根據本發明之實施例之製作一種影像 感測7L件封裝體的示意圖；以及 第8圖顯示根據本發明之實施例之製作一種影像感 測元件封裝體的流程圖。 【主要元件符號說明】 相關前案元件符號 2〜基底； 4〜影像感測元件； 6〜延伸接合墊； 8〜蓋板； 1〇〜導電層； 12〜焊料球體。 實施例元件符號 1〇2〜基底； 104〜影像感測元件； 106〜金屬層； 108〜蓋板； 110〜支撐部； 112〜黏著劑； 114〜間隙； 116〜溝槽； 118〜溝槽； 119〜隔離區域； 120〜絕緣層； 122〜溝槽絕緣層； 124〜孔洞； 126〜導電層； 9002-A33097TWF/yungchieh 16 200908306 128〜導通孔； 130〜影像感測元件區域； 132〜阻焊膜； 134〜焊料球體； 150〜影像感測元件封裝體。 9002-A33097TWF/yungchieh

Claims (1)

  1. 200908306 十、申請專利範圍： 1. 一種影像感測元件封裝體，包含·· -基底’其上方形成有—影像感測元件及—金屬展； 一蓋板，設置於該基底的上方； 日， 層.一導通孔，形成於該基底之t，且電性連接該金屬 -溝槽絕緣層，形成於該基底之中，且圍 孔；以及 等適 一焊料球體，形成於該基底的背面上，且藉由該 通孔電性連接該影像感測元件。 ’ 2·如申請專利第丨項所述之影像感測元件 體，其中該基底的厚度係小於150微米。 、 3‘如申請專利範圍第丨項所述之影像感測元件封f 體，更包含由該溝槽絕緣層所圍繞的一隔離區域，其對 應地形成於該金屬層下方的基底之中。 4’如申請專㈣圍第3項所述之影像感測元件封筆 體，其中該隔離區域的外型包含圓形或矩形。 、 麟5‘如申请專利範圍第3項所述之影像感測元件封裝 版’其中该導通孔形成於該隔離區域内的基底之中。 6·如申請專利範圍第1項所述之影像感測元件封裝 體，其中該溝槽絕緣層，包含： 一溝槽，形成於該基底之中；以及 絕緣材料，填充於該溝槽之中。 7.如申請專利範圍第6項所述之影像感測元件封裴 9002-A33097TWF/yungchieh 200908306 體’其中該絕緣材料包含藍 & 8二出 3風化矽、虱化矽或氮氧化石々。 8.如申睛專利範圍第丨 、 體，更句人— 、处之影像感測元件封裝 qa ΓΓ支撐部形成於該蓋板與該基底之間。、 .D申4專利範圍第j項 - 體，更包含： k之〜像感測7L件封裝 一導電層，形成於該基底的背面， 通孔與該焊料球體；以及 以性連接該導 一阻焊膜，形成於該導電層上。 1〇.—種影像感測元件封裝體，包含·· —上方形成有一影像感測元件的基底； 孟屬層，形成於該基底上，且電性連 感測元件； 电r玍逑接主。亥影像 複數個溝槽絕緣層，形成於該基底之中； 絕芦㈣域，位於該基底之中，其中各該溝槽 、也層係圍繞各該隔離區域； :導魏，形成於各該隔離區域内的該基底之中， 且忒V通孔電性連接至該金屬層；以及 =料球體，設置於該基底的_f面上，且藉由該 ¥通孔電性連接該影像感測元件。 驴-U·如申请專利範圍第10項所述之影像感測元件封 裝體，更包含： 一蓋板，設置於該基底的上方；以及 支撐邠，位於§亥盍板與該基底之間。 汝申明專利範圍第1 〇項所述之影像感測元件封 9002-A33097TWF/yungchieh 19 200908306 衣月且、，更包含一導電層，形成於該基底的該背面 電性連接該導通孔與該焊料球體。 且 :申請專利範圍第1〇1贝所述之影像感測元 衣體，其中該基底的厚度小於15〇微米。 、 14.—種影像感測元件封裝體的製作方法，包括. 底；提供上方形成有—影像感測元件及—金^的i基 接合一蓋板於該基底上； 薄化該基底； 形：：溝槽絕緣層於該基底之中，且該溝槽絕緣層 圍、°卩/刀的该基底，以形成一隔離區域； 形成$通孔於該隔離區域内的該基底之中， 性連接該金屬層；以及 - 形成—焊料球體於該基底㈣面上， 影像感測元件。 連接§亥 壯诚15=中請專利範圍第14項所述之影像感測元件封 衣體的衣作方法，其中接合該蓋板，更包括： 形成一支撐部於該蓋板上；以及 塗佈-黏㈣於該支撐部上，且接合該蓋板於該基 底上。 土 16. 如申請專利範圍第14項所述之影像感測元件封 衣體，裝作方法’其中薄化該基底係由化學機械研磨的 方式完成。 17. 如申3月專利範圍帛14項所述之影像感測元件封 9002-A33097TWF/yungchieh 20 200908306 裝體的製作方法，其中形成該溝槽絕緣層，包括： 形成一溝槽於該基底之中；以及 填充一絕緣材料於該溝槽之中，以形成該溝槽絕緣 ^ «•如申請專利範圍第17項所述之影像感測元件封 衣體的1作方法’其中形成該溝槽係由雷射鑽孔或乾钱 刻的方式完成。 姑触19.如申4專利圍第14項所述之影像感測元件封 叙體的製作方法，其中形成料通孔的方式，包括： 形成一孔洞於該隔離區域之中；以及 形成冑電層於該基底的背面上’且該導電層延伸 至该孔洞之中，以形成該導通孔。 專利範圍第19項所述之影像感測元件封 、豆、衣/去’更包括形成-阻焊膜於該導電層上。 9002-A33097TWF/yungchieh 21
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