TW200904262A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
TW200904262A
TW200904262A TW097111093A TW97111093A TW200904262A TW 200904262 A TW200904262 A TW 200904262A TW 097111093 A TW097111093 A TW 097111093A TW 97111093 A TW97111093 A TW 97111093A TW 200904262 A TW200904262 A TW 200904262A
Authority
TW
Taiwan
Prior art keywords
discharge
discharge port
electrode
guide hole
dielectric member
Prior art date
Application number
TW097111093A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroto Takeuchi
Yuichi Nakamori
Syunsuke Kunugi
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200904262A publication Critical patent/TW200904262A/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
TW097111093A 2007-03-27 2008-03-27 Plasma processing apparatus TW200904262A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007082049 2007-03-27

Publications (1)

Publication Number Publication Date
TW200904262A true TW200904262A (en) 2009-01-16

Family

ID=39830639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097111093A TW200904262A (en) 2007-03-27 2008-03-27 Plasma processing apparatus

Country Status (5)

Country Link
JP (1) JPWO2008123142A1 (ko)
KR (1) KR101087445B1 (ko)
CN (1) CN101658076A (ko)
TW (1) TW200904262A (ko)
WO (1) WO2008123142A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI719049B (zh) * 2015-09-11 2021-02-21 美商應用材料股份有限公司 具有槽式接地板的電漿模組

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009044932A1 (de) * 2009-09-24 2011-04-07 Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - Vorrichtung zum Behandeln von Objekten mit einem physikalischen Plasma bei Atmosphärendruck
JP5328685B2 (ja) * 2010-01-28 2013-10-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法
JP6026079B2 (ja) * 2011-03-01 2016-11-16 マイクロプラズマ株式会社 プラズマ電極
EP2756740B1 (en) 2011-09-15 2018-04-11 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
JP5534359B2 (ja) * 2011-09-21 2014-06-25 日新イオン機器株式会社 スリット電極及びこれを備えた荷電粒子ビーム発生装置
US10840065B2 (en) * 2016-12-05 2020-11-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus including a metal housing, first and second auxiliary members, and a housing contact
CN111527796B (zh) * 2018-01-10 2022-08-19 东芝三菱电机产业系统株式会社 活性气体生成装置
JP6719856B2 (ja) * 2018-01-10 2020-07-08 東芝三菱電機産業システム株式会社 活性ガス生成装置及び成膜処理装置
JP7328500B2 (ja) * 2019-03-27 2023-08-17 株式会社ニデック 大気圧プラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227874A (ja) * 1995-02-21 1996-09-03 Mitsubishi Electric Corp 真空処理装置および真空処理方法
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
EP1008674B1 (en) * 1997-04-11 2013-05-29 Tokyo Electron Limited Elecrode unit and processor
JPH1154296A (ja) 1997-08-05 1999-02-26 Sony Corp プラズマ発生装置およびプラズマ装置
JP3050498U (ja) * 1998-01-12 1998-07-14 信越化学工業株式会社 プラズマ装置用電極板
JP4145457B2 (ja) * 2000-02-08 2008-09-03 信越化学工業株式会社 プラズマエッチング装置用電極板
JP5021877B2 (ja) 2001-09-27 2012-09-12 積水化学工業株式会社 放電プラズマ処理装置
JP4579522B2 (ja) * 2003-09-29 2010-11-10 株式会社イー・スクエア プラズマ表面処理装置
US20050223986A1 (en) 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI719049B (zh) * 2015-09-11 2021-02-21 美商應用材料股份有限公司 具有槽式接地板的電漿模組

Also Published As

Publication number Publication date
KR101087445B1 (ko) 2011-11-25
WO2008123142A1 (ja) 2008-10-16
CN101658076A (zh) 2010-02-24
JPWO2008123142A1 (ja) 2010-07-15
KR20090108738A (ko) 2009-10-16

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