TW200904262A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
TW200904262A
TW200904262A TW097111093A TW97111093A TW200904262A TW 200904262 A TW200904262 A TW 200904262A TW 097111093 A TW097111093 A TW 097111093A TW 97111093 A TW97111093 A TW 97111093A TW 200904262 A TW200904262 A TW 200904262A
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Taiwan
Prior art keywords
discharge
discharge port
electrode
guide hole
dielectric member
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TW097111093A
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Chinese (zh)
Inventor
Hiroto Takeuchi
Yuichi Nakamori
Syunsuke Kunugi
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Sekisui Chemical Co Ltd
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Publication of TW200904262A publication Critical patent/TW200904262A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)

Abstract

To eliminate abnormal discharge onto an inner surface of an ejection port on a ground electrode of a plasma processing apparatus. A dielectric member (60) is arranged on a discharge surface (42), which is of a ground electrode (40) of a plasma processing apparatus and facing an electric field applying electrode (30). On the dielectric member (60), an ejection guide hole (62) continuous to a discharge space (1p) between the electrodes is formed, and on the ground electrode (40), an ejection port (41) continuous to the ejection guide hole (62) is formed. An inner surface of the ejection guide hole (62) on the dielectric member (60) is protruded from an inner surface of the ejection port (41) on the ground electrode (40).; On the dielectric member (60), a step surface (64) is extended as the same surface from an abutting surface (63) which abuts to the ground electrode (40).

Description

200904262 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種電漿處理裝置 【先前技術】 例如,於專利文獻!中記载有上下對向配置 之電浆處理裝置。上側之電極連接有電源而成: 電極。下側之電極電性接地而成為接地電極。於&加 之間施加有電場而生成大氣_光放電,並且導 5 氣體並電漿化。於下側之接地電極上形成有狹縫狀之噴: 口。自該噴出Π向下方喷出上述處理氣體。於接地電極之 下方配置有被處理物。自上述噴出口向該被處理物噴出, 理軋體,以進行表面處理。 於接地電極之上表面(與電場施加電極之對向面)上形成 有由氧化鋁之熔喷膜(sprayed film)而形成之固體介電體 層0 [專利文獻1]日本專利特開2004_006211號公報 【發明内容】 [發明所欲解決之問題] 上述構造之電漿處理裝置中’若由金屬構成之接地電極 之噴出口的内表面露出,則電弧有可能會落於該内表面 上。尤其是’電場集中於噴出口之電極施加電極側之端 緣在該緣上會引起發光強度更強之放電,或電弧會落 於該端緣上。如此-來’會產生如下問題:產生金屬污染 物或微粒’從而會附著於被處理物上。 129982.doc 200904262 [解決問題之技術手段] 為了解決上述課題,本發明是於放電空間内使處理氣體 電漿化而噴出,並與上述放電空間之外部之被處理物配置 ρ上所配置之被處理物接觸,而進行電漿表面處理的裝 置,其特徵在於具備: 電穷施加电極(熱電極(h〇t eiectr〇de)),其連接於電源; 接地電極(earth electr〇de),其具有朝向上述電場施加電 極之放電面、及朝向上述被處理物配置部之處理面,且電 性接地;以及 接地側之介電構件,其抵接於上述接地電極之放電面並 且面向上述電場施加電極而形成上述放電空間且由固體介 電體而構成;且 於上述介電構件上形成有與上述放電空間相連之噴出導 孔, 上 極 a 於上述接地電極上形成有與上述喷出導孔相連並且自 述放電面貫穿至上述處理面的喷出口, 上述介電構件之上述喷出導孔之内表面較上述接地電 之上述噴出口之内表面的上述放電面側之端緣更向嘴出 之徑向内側突出, 述"電構件具有與上述接地電極之放電面抵接之抵接 面、及自該抵接面在-面上延長並形成上述喷出導孔之内 表面與上述噴出口之内表面之間之階差的階差面。 藉此’可防止電弧等之異常放電落於接地電極之噴出口 之内表面之放電面側之端緣,從而可阻止金屬污染物以及 129982.doc 200904262 並可防止該專金屬污染物或微粒附著於被處 上述嘴出口之大小以及形狀亦可於該 (接地電極之厚度方向)上為固定。藉此 成喷出口’而且可使電弧等之異常放電 之内表面之放電側之端緣,亦不會落於内表面之任一 位上。200904262 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus [Prior Art] For example, in the patent literature! There is described a plasma processing apparatus in which the upper and lower sides are arranged in opposite directions. The upper electrode is connected to a power source: an electrode. The lower electrode is electrically grounded to become a ground electrode. An electric field is applied between & to generate an atmospheric_photodischarge, and the gas is vaporized. A slit-shaped spray is formed on the ground electrode on the lower side: a port. The processing gas is discharged downward from the discharge port. The object to be treated is disposed below the ground electrode. The object to be processed is ejected from the discharge port, and the body is rolled to perform surface treatment. A solid dielectric layer formed of a sprayed film of alumina is formed on the upper surface of the ground electrode (the opposite surface to the electric field application electrode). [Patent Document 1] Japanese Patent Laid-Open No. 2004-006211 [Problem to be Solved by the Invention] In the plasma processing apparatus of the above configuration, when the inner surface of the discharge port of the ground electrode made of metal is exposed, the arc may fall on the inner surface. In particular, the end of the electrode application electrode side where the electric field is concentrated on the discharge port causes a discharge having a stronger luminescence intensity, or an arc may fall on the end edge. Such a problem arises in that metal contaminants or particles are generated so as to adhere to the object to be treated. 129982.doc 200904262 [Technical means for solving the problem] In order to solve the above problems, the present invention discharges a processing gas in a discharge space and discharges it, and arranges the object to be disposed on the outside of the discharge space. A device for treating a surface of a plasma, which is characterized in that: an electro-depleted electrode (hot electrode (h〇t eiectr〇de)) connected to a power source; an earth electrode (earth electr〇de), a discharge surface facing the electric field application electrode and a treatment surface facing the workpiece arrangement portion, and electrically grounded; and a dielectric member on the ground side abutting on the discharge surface of the ground electrode and facing the electric field An electrode is formed to form the discharge space and is formed of a solid dielectric body; and a discharge via hole connected to the discharge space is formed on the dielectric member, and an upper electrode a is formed on the ground electrode and the discharge guide is formed The holes are connected and the self-described discharge surface penetrates through the discharge port of the processing surface, and the inner surface of the discharge guide hole of the dielectric member is higher than the grounding An end edge of the inner surface of the discharge port on the side of the discharge surface protrudes further inward in the radial direction of the nozzle, and the electric member has an abutting surface that abuts against the discharge surface of the ground electrode, and the abutting surface from the abutting surface The step surface of the step between the inner surface of the discharge guide hole and the inner surface of the discharge port is extended and formed on the surface. Thereby, it is possible to prevent an abnormal discharge such as an arc from falling on the end edge of the discharge surface side of the inner surface of the discharge port of the ground electrode, thereby preventing metal contaminants and preventing the adhesion of the specific metal contaminant or particles. The size and shape of the nozzle outlet at the location may be fixed in the thickness direction of the ground electrode. The end edge of the discharge side of the inner surface which serves as the discharge port and which can abnormally discharge the arc or the like does not fall on any one of the inner surfaces.

上述噴出導孔之大小以及形狀亦可於該噴出導孔之貫穿 方向(介電構件之厚度方向)上為固定。藉此,可容易地形 成喷出導孔。 上述噴出口之上述處理面側之端部之大小亦可小於上述 放電面側之端部之大小。藉此,可防止電弧等之異常放電 洛於接地電極之噴出口之内表面之放電面側之端緣上,並 且可防止外部環境氣體進入噴出口内,進而可確保處理氣 體之噴出之力’從而可提高處理效率。The size and shape of the discharge guide hole may be fixed in the penetration direction of the discharge guide hole (the thickness direction of the dielectric member). Thereby, the discharge guide holes can be easily formed. The size of the end portion of the discharge port on the processing surface side may be smaller than the size of the end portion on the discharge surface side. Thereby, it is possible to prevent the abnormal discharge of the arc or the like from being on the end edge of the discharge surface side of the inner surface of the discharge port of the ground electrode, and to prevent the external ambient gas from entering the discharge port, thereby ensuring the force of the discharge of the process gas. Can improve processing efficiency.

微粒之產生 理物上。 噴出口之貫穿方向 ’不僅可容易地形 不僅不會落於噴出 上述噴出口之大小亦可隨著接近上述處理面而平滑地變 小。藉此,可防止電場集中於喷出口之内表面,從而能可 靠地防止異常放電落下。 上述喷出口之上述處理面側之端部之大小以及形狀亦可 與上述噴出導孔之大小以及形狀大致一致。藉此,可充分 地防止外部環境氣體之進入,可充分地確保處理氣體之 力,並且能可靠地防止異常放電落於喷出口之内表面上。 較好的是,本發明之電漿處理裝置進而具備位置限制機 構,其在相對於上述接地電極而與上述放電面平行之面内 129982.doc 200904262 、制上述"電構件的位置且容許有誤差。藉此,使介電構 件與接地電極可彼此獨立地熱膨脹,並可防止由於兩者之 膨脹差而導致介電構件破損之情況。 較好的疋,使上述介電構件位於正規之位置之狀態下的 上述階差面沿上述突出方向上之寬度,大於上述誤差之容 許量。藉此,即便存在介電構件之定位誤差,亦能可靠地 防止異常放電落下。 、本發明之電聚處理裝置亦可進而具備具備被覆構件該 被覆構件由與上述介電構件不同之絕緣體構成,且以覆蓋 上述接地電極之喷出口之内表面之方式而設置。藉此,能 更可靠地防止異常放電落於喷出口之内表面上。 孝乂好的是’上述被覆構件之厚度與上述階差面沿上述突 出方向之寬度大致相同。藉此,可使介電體之喷出導孔之 内表面與被覆構件之内壁為一面,能可靠地防止被覆構件 之角部等之缺陷’並且可防止微粒之產生。 本發明可適用於在大致大氣塵附近下(常壓下)之電漿處 理。此處,所謂大致大氣壓附近下( 之範圍,右考慮到壓力調整之容易化 及農置構成之簡易化,則較好的是i 333χι〇4〜ι〇 _1〇4The generation of particles is on the physical object. The through-direction of the discharge port is not only easy to be formed, but also does not fall on the discharge. The size of the discharge port can be smoothly reduced as it approaches the treatment surface. Thereby, it is possible to prevent the electric field from being concentrated on the inner surface of the discharge port, thereby reliably preventing the abnormal discharge from falling. The size and shape of the end portion of the discharge port on the processing surface side may substantially match the size and shape of the discharge guide hole. Thereby, the entry of the external environmental gas can be sufficiently prevented, the force of the processing gas can be sufficiently ensured, and the abnormal discharge can be reliably prevented from falling on the inner surface of the discharge port. Preferably, the plasma processing apparatus according to the present invention further includes a position restricting mechanism that allows the position of the electric component to be 129982.doc 200904262 in a plane parallel to the discharge surface with respect to the ground electrode. error. Thereby, the dielectric member and the ground electrode can be thermally expanded independently of each other, and the dielectric member can be prevented from being damaged due to the difference in expansion between the two. Preferably, the width of the step surface in the state in which the dielectric member is in the normal position is larger than the tolerance of the error. Thereby, even if there is a positioning error of the dielectric member, abnormal discharge can be reliably prevented from falling. Further, the electropolymerization processing apparatus according to the present invention may further include a covering member including an insulator different from the dielectric member, and provided so as to cover an inner surface of the discharge port of the ground electrode. Thereby, it is possible to more reliably prevent the abnormal discharge from falling on the inner surface of the discharge port. It is preferable that the thickness of the covering member is substantially the same as the width of the step surface in the protruding direction. Thereby, the inner surface of the discharge guide hole of the dielectric body and the inner wall of the covering member can be made one surface, and the defects such as the corner portion of the covering member can be reliably prevented, and the generation of fine particles can be prevented. The present invention is applicable to plasma treatment under substantially atmospheric dust (at normal pressure). Here, in the vicinity of the approximate atmospheric pressure (the range is right, considering the ease of pressure adjustment and the simplification of the agricultural structure, it is preferable that i 333χι〇4~ι〇 _1〇4

Pa,更好的是 9_331xl〇4〜10.397x1〇4pa。 [發明之效果] :據本發明,可防止電弧等之異常放電落於接地電極之 產生^内表面之放電面側之端緣上’從而可阻止微粒之 129982.doc 200904262 【實施方式】 以下’根據圖式來說明本發明之實施形態。 圖1〜圖3係表示本發明之第!實施形態。大氣壓電漿處理 裝置具備處理頭1與被處理物配置部2。被處理物配置部2 由載物台或輸送機而構成,於其上側配置有被處理物w。 被處理物W例如係玻璃基板或半導體基板。 被處理物配置部2可將被處理物w於圖丨之紙面正交方向Pa, better is 9_331xl〇4~10.397x1〇4pa. [Effects of the Invention] According to the present invention, it is possible to prevent an abnormal discharge such as an arc from falling on the edge of the discharge surface side of the inner surface of the ground electrode, thereby preventing the particles from being 129982.doc 200904262 [Embodiment] Embodiments of the present invention will be described based on the drawings. Figures 1 to 3 show the first aspect of the present invention! Implementation form. The atmospheric piezoelectric slurry processing apparatus includes a processing head 1 and a workpiece arrangement unit 2. The workpiece arrangement unit 2 is configured by a stage or a conveyor, and the workpiece w is disposed on the upper side. The object to be processed W is, for example, a glass substrate or a semiconductor substrate. The workpiece arrangement unit 2 can place the object to be processed w in the direction orthogonal to the plane of the drawing.

上搬送。亦可使被處理物…位置固定,而使處理頭1於圖1 之紙面正交方向上移動。 處理頭1支持於未圖示之架台上,並位於離開被處理物 配置部2之上側之位置處。處理頭丨具備上蓋構件ι〇、框架 20、電場施加電極30、及底板4〇,且於一方向(圖i之左右 方向、圖2之紙面正交方向)上延伸。 上蓋構件10由耐腐蝕性較高之樹脂(絕緣體)而構成,且 於處理頭1之長度方向上延伸。 如圖3所示,框架20具有一對長邊框架部21及一對短邊 框架部22,且形成為内部開口之俯視長方形。長邊框架部 21構成處理頭i之長邊。短邊框架部22構成處理頭工之短 邊。框架20之上表面載置有上蓋構㈣之周緣部。如圖2 所示,較短之螺栓91垂直地貫穿±蓋構件ig㈣人至框竿 财。藉由螺栓91來連結上蓋構件1〇與框架2〇。上蓋構件 1 0自上側封住框架20之内部空間。 於一對長邊框架部21上分別形赤古々μ播 』办成•有虱體導入路徑20a。 氣體導入路徑20a於處理頭1之長声古 長度方向上延伸。來自處理 129982.doc -10· 200904262 氣體源4之氣體供給路徑牦與氣體導入路徑2〇a之一端部相 連。軋體導入口 20b自氣體導入路徑2〇a之側部分支。氣體 導入口 20b於氣體導入路徑2〇a之延伸方向(圖2之紙面正交 方向)上空開間隔而設置有複數個。各氣體導入口 2补到達 長邊框架部2 1之内側面而開口。 再者,於上述處理氣體源4内積蓄有與處理目的相應之 處理氣體。Move on. It is also possible to fix the position of the object to be processed, and to move the processing head 1 in the direction orthogonal to the plane of the paper of Fig. 1. The processing head 1 is supported on a stand (not shown) and is located at a position away from the upper side of the workpiece arrangement portion 2. The processing head has an upper cover member ι, a frame 20, an electric field applying electrode 30, and a bottom plate 4, and extends in one direction (the left-right direction of Fig. i, the direction perpendicular to the plane of the drawing of Fig. 2). The upper cover member 10 is made of a resin (insulator) having high corrosion resistance and extends in the longitudinal direction of the processing head 1. As shown in Fig. 3, the frame 20 has a pair of long side frame portions 21 and a pair of short side frame portions 22, and is formed in a rectangular shape in plan view with an internal opening. The long side frame portion 21 constitutes the long side of the processing head i. The short side frame portion 22 constitutes the short side of the processing head. A peripheral portion of the upper cover structure (4) is placed on the upper surface of the frame 20. As shown in Fig. 2, the shorter bolt 91 penetrates vertically through the cover member ig (four) to the frame. The upper cover member 1〇 and the frame 2〇 are coupled by bolts 91. The upper cover member 10 seals the inner space of the frame 20 from the upper side. The pair of long side frame portions 21 are respectively shaped to form a red body, and the body is introduced into the path 20a. The gas introduction path 20a extends in the long sound length direction of the processing head 1. From the process 129982.doc -10· 200904262, the gas supply path 气体 of the gas source 4 is connected to one end of the gas introduction path 2〇a. The rolling body introduction port 20b is branched from the side of the gas introduction path 2A. The gas inlet port 20b is provided at a plurality of intervals in the extending direction of the gas introduction path 2a (the direction perpendicular to the plane of the drawing of Fig. 2). Each of the gas introduction ports 2 is filled to the inner side surface of the long side frame portion 2 1 and opened. Further, a processing gas corresponding to the purpose of the treatment is accumulated in the processing gas source 4.

於框架20之内部之氣體導入路徑2〇a之更下側形成有接 地側冷卻路徑2〇C。使來自冷卻介質供給機構(省略圖示)之 冷卻介質通過接地側冷卻路徑2〇c。料冷卻彳質例如使 用有水。 於處理頭1之内部設置有電場施加側介電構件50 ^介電 構件50-體地具有底板部5 t及—對側壁部、μ。底板部 51於處理頭1之長度方向上 延伸。一對側壁部52、52自底 板部51之寬度方向之 51及側壁部52、52, 狀。 兩側之緣向上突出。組合該等底板部 介電構件50之剖面形成為大致u字 底板部51配置於電極3〇之放 放電穩疋化之介電體層的作用 離。 電生成面上並發揮著作為使 ’與電極30不為一體而可分 如圖2所示,於一 有一對側部間隙1 c。 端部相連。 對側2 °卩52與長邊框架部21之間形成 氣體導入口 20b與各側部間隙1 c之上 螺栓93 (圖2)垂直地貫穿上蓋 構件10而旋入至側壁部5 2 129982.doc 11 200904262 中。藉由螺栓93來連社卜笔姐, 連、口上盍構件10與介電構件50。 於"電構件50之内部收容有 各有電%把加電極3〇。 不鏽鋼或鋁等金屬構成。電極 電極由 ^ ^ ^ ώ . 成為長度方向朝向圖1 之左右方向(與處理頭1 朝㈣…… 相同之方向)而寬度方向 朝向圖1之紙面正交方向的 _ 狀如圖2所示,雷極3 〇姐 由供電線3a而連接於電湃 罨極、、二 之底柄邱W ^ 電構㈣ "Π 面上。藉此,電極30之下表面(電場施 加側放電面)藉由作為固 (電劳也 歷,丨窀體層之板部51而覆菩。 於電極30之内部形成右雷 孤 路徑仏於電極30之長Λ電;^加側冷卻路徑仏。冷卻 介質供給機構之冷卻介來自未圖示之冷卻 L 買通過冷郃路徑32c。作為冷卻介 質例如使用有水。 如圖1所示,於電極3〇之 部22之間設置有端塊(咖.向之兩端面與短邊框架 直有鈿塊(end piece)35。端塊乃由氧化 瓷=體)而構成。藉由端塊35使電極%與框架 1. 於電㈣之長度方向之兩端 邑緣 電極3〇之伸長變形之若干⑽ U 5之U有容許 ^ . / 干間隔。端塊35與電場施加側介 構件5 0之接縫係藉由黏接 设W寻而被完全地填隙。 如圖2所示,電極30之寬度方向之兩側面與 之側壁部52相對向。於該等 側部絕緣間隙ld。 本30與側壁部52之間形成有 電極3〇之上方覆蓋有上蓋構㈣。於 10之間形成有上部絕緣Fa1 丨 上盖構件 緣間隙le。上部絕緣間隙 緣間隙Id彼此相連。 兴側4絕 129982.doc 200904262 如圖1〜圖3所示,於處理頭1之底部設置有底板40。底板 40形成為長度方向朝向圖丨之左右方向(與處理頭丨之長度 方向相同之方向)而寬度方向朝向圖丨之紙面正交方向之平 板狀。底板40之周緣部抵接於框架2〇之下表面,並且較長 之螺栓92(圖2)垂直地貫穿上蓋構件10以及框架20而旋入至 底板40之周緣部中。藉由螺栓92將底板4〇連結於框架2〇 上。底板4 0自下側封住框架2 〇之内部空間。 底板40由不鏽鋼等耐熱性以及耐腐蝕性較高之金屬而構 成。底板40經由接地線3b(圖2)而電性接地。藉此,底板4〇 成為與電場施加電極30相對向之接地電極。以下,將底板 40適當地稱作「接地電極40」。 接地電極40之上表面成為朝向電場施加電極3〇之接地側 放電面42(於與電場施加電極3〇之間應生成放電之面)。 接地電極40與被處理物配置部2進而被處理物w相對 向,且於與被處理物w之間形成處理空間la。接地電極扣 之下表面(與放電面42相反側之面)成為朝向被處理物评之 處理面43(於與被處理物w之間應形成處理空間丨&之面卜 於接地電極40之放電面(上表面)42上設置有接地側介電 構件6〇。介電構件60由氧化鋁等陶究(固體介電體)而構 成。介電構件60形成為於與接地電極4〇相同之方向上延伸 的平板狀。介電構件60覆蓋接地電極4〇之放電面“,並發 揮著使放電穩定化之介電體層之作用。 介電構件60收容於框架20之内部。於介電構件6〇之外周 緣與框架2〇之内周面之間’形成有充分容許介電構件60之 129982.doc • 13 - 200904262 膨脹或者將介電構件60收納於框架2〇内之間隔。間隔之大 =達到可進行介電構件60之收容操作之程度,例如心 ,1 mm。框架20成為限制介電構件6〇在接地電極* 表面42上之位置的位置限制機構。對於介電構件的之 而言,容許與上述間隔之大小dl(<1_)相 誤差(參照圖5)。 <往度的 成於介電構件60之長度方向之兩端緣分別形 成有向上犬出之凸部6卜凸部61沿介電構件6〇之長度方向 之端緣而延伸。於該等凸部61上載置有上述 電構件50之底板部51在長度方向上之兩端部。 〇评w 於電場施域介電構㈣之底板部51與接_介電構件 6〇之間,形成有較窄之下部間隙lb。如下述般,該下部間 隙lb之中央部成為放電空間邙。接地側介電構㈣之上表 面面向電場施加側介電構件5〇進而電場施加電極%。接地 側介電構件60之上表面成為形成放電空間^之形成面。如 請示’下部間隙1b在寬度方向上之兩端部分別與側部 間隙lc之下端部相連。 就處理頭1之噴出構造進行說明。 於接地側介電構件60上形成有多個喷出導㈣。喷 ⑽自介電構件60之上表面(放電空間化之形成面)向下表 ^盍在接地電極40之面)於厚度方向上貫穿。喷出導孔Μ 電空間1P相連。喷出導孔62之大小以及形狀於貫穿方 上下方向)上為固定。例如,嗔出導孔62形成為直徑 為1 mm左右之固定大小的圓形剖面。 129982.doc -14- 200904262 接地電極40上形成有多個噴出口 41 ^嘴出口 41自接地電 極40之上表面(放電面42)向下表面(處理面43)於厚度方向 上貫穿。喷出口41之大小以及形狀於貫穿方向(上下方向) 上為固定。例如,噴出口41形成為直徑為3 mm左右之固定 大小的圓形剖面。喷出口 41與接地側介電構件6〇之喷出導 孔62 —對一地相對應地排列,且與分別相對應之噴出導孔 62相連,並且與處理空間1 a相連。 喷出口 41以及噴出導孔62有規則地排列。例如圖6(a)所 ( 示,喷出口 41以及喷出導孔62可排列成四邊格子狀。或 者,如圖6(b)所示,噴出口41以及喷出導孔62亦可排列成 三角格子狀等。 如放大圖4(a)所示,各噴出口 41大於喷出導孔62。喷出 導孔62之内表面較噴出口 41之内表更向喷出口 “之徑向之 内側犬出。;I電構件6〇之下表面包括抵接面㈠及階差面 64。抵接面63係於介電構件6〇之下表面中抵接於接地電極 f 4〇之放電面42的部分。階差面64與抵接面63構成同-平 I ® ’且自抵接面63向喷出口41之徑向内側在一面上延長。 階差面64形成噴出導孔62之内表面與嘴出口 41之内表面之 間的P白i P白差面64形成為沿喷出口 4丄以及喷出導孔Μ之 周緣之環狀。如圖4(b)所示1自上方(電場施加電極30之 側)觀/τ'則’丨電構件60之噴出導孔62之周緣部分遍及全 周而覆蓋接地電極40之嗔出口 41之上端緣&(放電面42側 之端緣)。 喷出口 4 1之吉牺宙丄7 , 二更好的是較喷出導孔62之直徑大出 129982.doc 200904262 0 · 5〜4 mm左右’更好的是大2 mm左右。 階差面64之寬度wl(自噴出口 41之端緣之突出量)為评1== 1 mm左右。階差面64之寬度wl大於介電構件6〇之定位誤 差之容許量 dl(<l mm)(wl>dl)。 就處理頭1之組裝順序進行說明。A ground-side cooling path 2〇C is formed on the lower side of the gas introduction path 2〇a inside the frame 20. The cooling medium from the cooling medium supply mechanism (not shown) is passed through the ground side cooling path 2〇c. The material is cooled, for example, using water. An electric field application side dielectric member 50 is disposed inside the processing head 1. The dielectric member 50 has a bottom plate portion 5t and a pair of side wall portions, μ. The bottom plate portion 51 extends in the longitudinal direction of the processing head 1. The pair of side wall portions 52, 52 are formed in the width direction 51 of the bottom plate portion 51 and the side wall portions 52, 52. The edges of the two sides protrude upward. The cross-section of the dielectric member 50 in combination with the bottom plate portion is formed so as to be substantially U-shaped, and the bottom plate portion 51 is disposed on the dielectric layer in which the discharge and discharge of the electrode 3 is stabilized. The electroformed surface is designed so that it is not integral with the electrode 30 and can be divided as shown in Fig. 2, and has a pair of side gaps 1c. The ends are connected. The gas inlet port 20b is formed between the opposite side 2°卩52 and the long side frame portion 21, and the upper cover member 10 is inserted through the upper cover member 10 perpendicularly to the upper side gap 1c and screwed into the side wall portion 5 2 129982. Doc 11 200904262. The member 10 and the dielectric member 50 are connected to the upper and lower jaw members by bolts 93. The electric component 50 is housed in the inside of the electric component 50. Made of metal such as stainless steel or aluminum. The electrode electrode is formed by ^ ^ ^ ώ. The longitudinal direction is oriented in the left-right direction of FIG. 1 (the same direction as the processing head 1 toward (four)...), and the width direction is oriented in the direction orthogonal to the plane of the paper of FIG. Leiji 3 sister is connected to the electric bungee by the power supply line 3a, and the bottom handle of the second is Qiu W ^ electrostructure (4) " Thereby, the lower surface of the electrode 30 (the electric field application side discharge surface) is covered by the plate portion 51 of the body layer as a solid (the electric field is applied to the inside of the electrode 30). The cooling medium of the cooling medium supply mechanism is supplied from the uncooled cooling unit L through the cold heading path 32c. For example, water is used as the cooling medium. An end block is provided between the portions 22 of the crucible (the coffee has an end piece 35 to the short side frame and an end piece 35. The end block is made of oxidized porcelain = body). The electrode is made by the end block 35. % and frame 1. The elongation deformation of the edge electrode 3〇 at both ends of the length direction of the electricity (4) (10) U 5 U has the allowable ^. / dry interval. The end block 35 is connected to the electric field application side dielectric member 50 The slit is completely caulked by the adhesive connection. As shown in Fig. 2, both side faces of the electrode 30 in the width direction are opposed to the side wall portion 52. The side insulating gap ld is in the side. The upper surface of the electrode portion 3 is formed with an upper cover structure (four) formed between the side wall portions 52. An upper insulation is formed between the electrodes 10 Fa1 丨 upper cover member edge gap le. The upper insulation gap edge Id is connected to each other. Xingbian 4 129982.doc 200904262 As shown in Fig. 1 to Fig. 3, a bottom plate 40 is disposed at the bottom of the processing head 1. The bottom plate 40 is formed as The longitudinal direction is a flat plate shape in the left-right direction of the drawing (the same direction as the longitudinal direction of the processing head cymbal) and the width direction is orthogonal to the plane of the paper surface of the drawing. The peripheral edge portion of the bottom plate 40 abuts against the lower surface of the frame 2〇. And the longer bolt 92 (Fig. 2) vertically penetrates the upper cover member 10 and the frame 20 and is screwed into the peripheral portion of the bottom plate 40. The bottom plate 4 is coupled to the frame 2 by a bolt 92. The bottom plate 40 is lowered from the bottom. The inner space of the frame 2 is sealed on the side. The bottom plate 40 is made of a metal having high heat resistance such as stainless steel and high corrosion resistance. The bottom plate 40 is electrically grounded via the grounding wire 3b (Fig. 2). The ground electrode is opposed to the electric field applying electrode 30. Hereinafter, the bottom plate 40 is appropriately referred to as "ground electrode 40." The upper surface of the ground electrode 40 is a ground-side discharge surface 42 facing the electric field applying electrode 3 (applied to an electric field) Electrode 3〇 The ground electrode 40 is opposed to the workpiece arrangement portion 2 and further to the workpiece w, and a processing space la is formed between the ground electrode 40 and the workpiece w. The lower surface of the ground electrode button (with discharge) The surface opposite to the surface 42 is a processing surface 43 facing the object to be processed (provided on the discharge surface (upper surface) 42 where the processing space 丨 & There is a ground-side dielectric member 6A. The dielectric member 60 is made of a ceramic (solid dielectric) such as alumina, and the dielectric member 60 is formed in a flat plate shape extending in the same direction as the ground electrode 4A. The dielectric member 60 covers the discharge surface of the ground electrode 4, and functions as a dielectric layer for stabilizing the discharge. The dielectric member 60 is housed inside the frame 20. The periphery and the frame of the dielectric member 6〇 Between the inner circumferential surfaces of the crucibles, there is a gap between the inner surface of the dielectric member 60 that is sufficient to allow the dielectric member 60 to expand or to house the dielectric member 60 in the frame 2〇. The interval is large = the dielectric can be made The degree of accommodation operation of the member 60, for example, the core, 1 mm. The frame 20 serves as a position limiting mechanism that limits the position of the dielectric member 6 on the surface 42 of the ground electrode *. For the dielectric member, the above interval is allowed. The size of the dl (<1_) phase error (refer to Fig. 5). <The two ends of the longitudinal direction of the dielectric member 60 are formed with the convex portion 6 of the upward dog, and the convex portion 61 The end of the electrical member 6〇 extends in the longitudinal direction. The end portions of the bottom plate portion 51 of the electrical component 50 are placed on the convex portions 61 at both ends in the longitudinal direction. The bottom plate portion 51 and the dielectric member 6〇 are formed to be narrower The lower gap lb. The central portion of the lower gap lb becomes a discharge space 如. The upper surface of the ground side dielectric structure (4) faces the electric field application side dielectric member 5 and thus the electric field application electrode %. The ground side dielectric member 60 The upper surface is a surface on which the discharge space is formed. As shown in the drawing, the both ends of the lower gap 1b in the width direction are respectively connected to the lower end portions of the side gaps lc. The discharge structure of the processing head 1 will be described. A plurality of discharge guides (four) are formed on the dielectric member 60. The spray (10) penetrates from the upper surface of the dielectric member 60 (the surface on which the discharge space is formed) to the surface of the ground electrode 40 in the thickness direction. The discharge guide holes Μ are connected to the electric space 1P. The size and shape of the discharge guide holes 62 are fixed in the vertical direction of the penetration side. For example, the discharge guide holes 62 are formed into a circular cross section of a fixed size having a diameter of about 1 mm. 129982.doc -14- 200904262 A plurality of discharge ports 41 are formed in the ground electrode 40. The nozzle outlet 41 penetrates from the upper surface (discharge surface 42) of the ground electrode 40 to the lower surface (processing surface 43) in the thickness direction. Export 41 The small shape and the shape are fixed in the through-direction (up-and-down direction). For example, the discharge port 41 is formed into a circular cross section of a fixed size having a diameter of about 3 mm. The discharge port 41 and the ground-side dielectric member 6 are sprayed through the guide holes. 62—corresponding to a ground, and connected to the corresponding discharge guide holes 62, and connected to the processing space 1a. The discharge port 41 and the discharge guide hole 62 are regularly arranged. For example, as shown in Fig. 6(a) (The discharge port 41 and the discharge guide hole 62 may be arranged in a square lattice shape. Alternatively, as shown in Fig. 6(b), the discharge port 41 and the discharge guide hole 62 may be arranged in a triangular lattice shape or the like. As shown in Fig. 4(a), each of the discharge ports 41 is larger than the discharge guide holes 62. The inner surface of the discharge guide hole 62 is more outwardly directed toward the inner side of the discharge port than the inner surface of the discharge port 41. The lower surface of the I electrical member 6 includes an abutting surface (1) and a step surface 64. The surface 63 is a portion of the lower surface of the dielectric member 6A that abuts against the discharge surface 42 of the ground electrode f 4 . The step surface 64 and the abutting surface 63 form the same-flat I ® ' and the self-contact surface 63 The radially inner side of the discharge port 41 is extended on one side. The step surface 64 forms a P white i P white surface 64 between the inner surface of the discharge guide hole 62 and the inner surface of the nozzle outlet 41 is formed along the discharge port 4 And a ring shape which is ejected from the periphery of the guide hole 。. As shown in Fig. 4(b), 1 is viewed from above (the side of the electric field application electrode 30) / τ', then the peripheral portion of the discharge guide hole 62 of the 丨 electric member 60 is spread over Covering the upper end edge & (the end edge of the discharge surface 42 side) of the crucible outlet 41 of the ground electrode 40 over the entire circumference. The discharge port 4 1 is more than the diameter of the discharge guide hole 62. 129982.doc 200904262 0 · 5~4 mm or so 'better is about 2 mm. The width wl of the step surface 64 (the amount of protrusion from the end edge of the discharge port 41) is about 1 == 1 mm. The difference is greater than a face width wl 64 6〇 dielectric member of the positioning error tolerance of dl (< l mm) (wl > dl). The sequence of assembly on the handling head 1 will be described.

將框架20配置於底板即接地電極4〇之上。將接地側介電 構件60收容於框架20之内側。將該介電構件6〇載置於接地 電極40之上表面42上。藉此,介電構件6〇之噴出導孔62與 接地電極40之喷出口41連通。噴出導孔62之内表面較噴出 口4丨之内表面更向内側突出,該等噴出導孔02之内表面以 及喷出口 41之内表面之間形成有階差64。於介電構件的與 框架20之間設定有間隔,可容易地收容介電構件6〇。因該 間隔極小(dl<l mm),因此可將介電構件6〇大致準確地定 位於接地電極40上。如圖5⑷所示,即便存在介電構件 之定位誤差’因誤差之容許㈣小於正規之定位狀態下之 階差面64之寬度wl(圖4⑷)(dl<wl),故喷出導孔Q之内表 面之全周必定較喷出口41之内表面更向内側突出。因此, 如圖5(b)所示,自上侧觀察,喷出⑼之上端緣仏之全周 必須由介電構件60之噴出導孔62之周緣部所覆蓋。 進而’將電場施加側介電構件5〇插入至框架加之内部。 將該電場施加側介電構件5〇 在長度方向上之兩端部载置於 件:〇Γ广將電場施加電極30载置於電場施加側介電構 件5〇之底板部51之上。脾山括取 上將鈿塊35配置於電場施加電極30在 ^方向上之兩端部。藉由黏接劑等將端㈣與電場施加 129982.doc 200904262 側"電構件5 〇之接縫完全地填隙。 接著,將上蓋構件10覆蓋於構件2〇、3〇、5〇之上利用 車乂短之螺拾9!將框架2〇固定於上蓋構件工〇上,並利用較長 之螺栓92將接地電極4〇固定於框架2〇上,且利用中間長度 之螺柽93將上蓋構件丨〇固定於電場施加側介電構件π上。 使該等螺栓91、92、93均朝向相同方向(垂直),因此無須 同:並行地緊固,可按照任意之順序而容易地螺固。 J用上述構成之電漿處理裝置進行表面處理時,將被 處理物w設置於被處理物配置部2之上。 , 將來自處理氣體源4之處理氣體經由氣體供給路 徑钩而供給至處理頭1之氣體導入路徑20a。使該處理氣體 自複數個氣體導入口薦均勾地流入至側部間隙二 進一步導入至下部間隙lb中。 於此並行地,自電源3向電場施加電極3〇供給電壓。藉 於電场施加電極30與接地電極4〇之間生成大氣麼輝光 放電下部間隙113之中央部成為放電空間lp ’使該空間lp 之處理氣體電漿化(包括分解、激發、活化、自由基化、 離子化)。 、&電漿化之處理氣體經由噴出導孔62自喷出口 Μ向下方 之處理空間U噴出’而與被處理物w接觸。藉此,於被處 理物W之表面上引被只處 ^ 之反應,進行所需之表面處理。進而, 於左右掃描被處理物配 # 置。卩2,措此可對被處理物W之全 體進行處理。 接地側介電構件6〇之嘴出導孔62之内表面較接地電極40 129982.doc •17- 200904262 之噴出口“之内表面更向内側突出,因此若自電場施加電 極3〇之側觀察,介電構件60之噴出導孔以周緣部覆蓋喷 出口 41之内表面。因此,可防止電弧等之異常放電落於喷 1之内表面之尤其上端緣41 a上。如圖5所示即便存 在介電構件6〇之定位誤差,必定可利用介電構件60覆蓋喷 出口 41之上端緣41a之全周。由此,能可靠地防止異常放 電。藉此’可阻止金屬污染物以及微粒之產生,從而可防 止該等金屬污染物或微粒附著於被處理物w上。 接著說明本發明之其他實施形態。卩下之實施形態中 關於所述構成,於圖式中附上相同符號並適當省略說明。 圖7係表示噴出口41之形狀之變形例。如該圖(a)所示, 該變形例中,接地電極4〇之喷出口 41之上端緣❽之内徑 大於噴出導孔62之内徑,且喷出口41成為向下直徑縮小之 錐狀。因此,噴出口 41之大小隨著接近接地電極40之下表 面(處理面43)而平滑地變小。喷出口 41之下端緣川之内徑 (处理面43側之端部之大小)小於上端緣4丨&之内徑(放電面 ' 42側之端部之大小)。 進而,如圖7(b)所示,喷出口 41之下端緣41b之内徑與 f & I U 62之内;^相同。即’喷出口 4】之處理面側之端部 4lb之大小以及形狀與纟出導孔之大小以及形狀大致— 致。 、藉此,可防止電派等之異常放電落於噴出口 41之内表面 尤,、疋上下之端緣41a、41b上,並且可防止外部環境氣體 進入喷出口 41内。進而’於放電空間lp内經電漿化之處理 129982.doc -18- 200904262 轧體經由噴出導孔62並通過喷出口 4ι時,依次集中,可 噴出口41有力地噴出。其結果,可提高處理效率。 如圖8所示’代替使喷出口 “形成為錐孔亦可使噴出 口 41之上側(放電面側)之部分44為大徑,使噴出口 之下 側(處理面側)之部分45為小徑,於上側部分44與下侧部分 45之間形成階差46,而使喷出口 41形成為階段狀。上侧部 :44之直徑大於噴出導孔62之直徑。下側部分之直徑與 噴出導孔62之直徑大致相同。 圖9所示之變形例中,於與第1實施形態(圖丨〜圖相同 之噴出口 41之内表面設置有被覆構件7〇(套筒)。被覆構件 7〇由與接地側介電構件60不同之絕緣體而構成。作為被覆 構件70之絕緣體較好的是耐電漿性以及耐熱性較高之材 質例如’可為氣系樹脂、石英、玻璃等。 被覆構件70形成為筒形狀。被覆構件7〇之外周面密接於 喷出口 41之内表面。 被覆構件70之厚度與階差面64之寬度w丨相同。因此,被 覆構件70之内周面與喷出導孔62之内表面為一面。噴出口 41中被覆構件70之内部空間與噴出導孔62相連。於放電空 間lp内經電漿化之處理氣體經由噴出導孔62並通過被覆構 件7 0之内部空間而喷出。 根據該態樣,接地電極40之喷出口 4 1之由金屬構成的内 表面藉由被覆構件70而覆蓋’因此能可靠地防止異常放 電°被覆構件70之内周面與噴出導孔62之内表面為一面, 因此可防止自被覆構件70之内周面之上端緣等產生微粒。 129982.doc -19- 200904262 =1〇所示’可分別僅於接地電極4〇以及介電構件的之 向之中央部而設置噴出口 41以及噴出導孔62。 若考慮到加工性等,則喷出口 41之剖面形狀較好的是正 但不限?此,可為橢圓形或長_,亦可為四邊形等 夕邊形狀,還可為狹縫狀。 於圖U所示之實施形態中,喷出口41以及嘴出導孔㈣ 成為長孔狀。喷出口41以及噴出導孔62之長徑彼此係朝向 冋一方向(此處為處理頭!之長度方向)1丨口以長徑大 於噴出導孔62之長徑。噴出σ41之短徑大於嘴出導孔以之 紐住。噴出導孔62之内部空間之整體與喷出口 4"目連。於 t出41之内表面與喷出導孔62之内表面之間形成有階差 面64。階差面64沿噴出口41以及喷出導孔62之周緣而形成 為較長之環狀。複數個長孔狀之喷出口 41以及喷出導孔Μ ;處理頭1之長度方向上排列成一行。與處理頭1之寬度方 向相鄰之喷出口41以及喷出導孔62之行係彼此於處理頭i 之長度方向上偏移,而該等行彼此亦可於處理頭1之長度 方向對齊。 於圖12所示之實施形態中,喷出σ41以及噴出導孔62可 形成為較圖11之長孔狀噴出口41以及喷出導孔62而更向處 理頭1之長度方向充分長地延伸之狹縫狀。狹縫狀喷出口 41之長度大於狹縫狀噴出導孔62之長度。狹縫狀噴出口“ 之寬度大於狹縫狀喷出導孔62之寬度。狹縫狀噴出導孔Μ 之内邛空間之整體與狹縫狀噴出口41相連。於狹縫狀噴出 口 41之内表面與狹縫狀喷出導孔62之内表面之間形成有階 129982.doc •20- 200904262 口 以及噴出導孔62之 差面64。階差面μ沿狹縫狀之噴出 周緣形成為較長之環狀。The frame 20 is placed on the bottom plate, that is, the ground electrode 4A. The ground-side dielectric member 60 is housed inside the frame 20. The dielectric member 6 is placed on the upper surface 42 of the ground electrode 40. Thereby, the discharge guide hole 62 of the dielectric member 6 is in communication with the discharge port 41 of the ground electrode 40. The inner surface of the discharge guide hole 62 protrudes more inward than the inner surface of the discharge port 4, and a step 64 is formed between the inner surface of the discharge guide hole 02 and the inner surface of the discharge port 41. A space is formed between the dielectric member and the frame 20, and the dielectric member 6A can be easily accommodated. Since the interval is extremely small (dl < 1 mm), the dielectric member 6 可 can be positioned substantially accurately on the ground electrode 40. As shown in Fig. 5 (4), even if there is a positioning error of the dielectric member 'the tolerance (4) is smaller than the width w1 of the step surface 64 in the normal positioning state (Fig. 4 (4)) (dl < wl), the ejection via Q The entire circumference of the inner surface must protrude more inward than the inner surface of the discharge port 41. Therefore, as shown in Fig. 5(b), the entire circumference of the upper edge 喷 of the discharge (9) must be covered by the peripheral portion of the discharge guide hole 62 of the dielectric member 60 as viewed from the upper side. Further, the electric field application side dielectric member 5A is inserted into the frame plus the inside. The electric field application side dielectric member 5'' is placed on both ends in the longitudinal direction. The electric field application electrode 30 is placed on the bottom plate portion 51 of the electric field application side dielectric member 5''. The spleen is attached to the upper end of the electric field applying electrode 30 in the ^ direction. The end (4) is completely interstitial with the electric field by applying an electric field to the joint of the electric member 129982.doc 200904262 side "electric member 5. Next, the upper cover member 10 is covered on the members 2〇, 3〇, 5〇 by the shank short screw picking 9! The frame 2〇 is fixed on the upper cover member workpiece, and the grounding electrode is grounded by the longer bolt 92 4〇 is fixed to the frame 2〇, and the upper cover member 丨〇 is fixed to the electric field application side dielectric member π by the intermediate length screw 93. The bolts 91, 92, 93 are all oriented in the same direction (vertical), so that it is not necessary to: fasten in parallel, and can be easily screwed in any order. When the surface treatment is performed by the plasma processing apparatus having the above configuration, the workpiece w is placed on the workpiece arrangement portion 2. The processing gas from the processing gas source 4 is supplied to the gas introduction path 20a of the processing head 1 via the gas supply path hook. The process gas is introduced into the lower gap lb from the plurality of gas introduction ports into the side gaps 2 and further introduced into the lower gaps lb. In parallel here, a voltage is supplied from the power source 3 to the electric field application electrode 3A. By generating an atmosphere between the electric field applying electrode 30 and the ground electrode 4?, the central portion of the lower gap 113 of the glow discharge becomes the discharge space lp' to plasmaize the processing gas of the space lp (including decomposition, excitation, activation, and radicals). Chemistry, ionization). The <plasma processing gas is ejected from the discharge port Μ through the discharge port 62 to the processing space U below, and is brought into contact with the workpiece w. Thereby, the reaction of only the surface of the object W is introduced, and the desired surface treatment is performed. Further, the object to be processed is scanned in the right and left.卩2, in this way, the entire object W can be processed. The inner surface of the nozzle outlet hole 62 of the ground-side dielectric member 6 is protruded more inward than the inner surface of the ground electrode 40 129982.doc • 17- 200904262. Therefore, if the electrode is applied from the side of the electric field application electrode 3 The discharge guide hole of the dielectric member 60 covers the inner surface of the discharge port 41 with the peripheral portion. Therefore, abnormal discharge such as arcing can be prevented from falling on the upper end edge 41a of the inner surface of the spray 1, as shown in Fig. 5. There is a positioning error of the dielectric member 6〇, and it is inevitable that the entire circumference of the upper end edge 41a of the discharge port 41 can be covered by the dielectric member 60. Thereby, abnormal discharge can be reliably prevented, thereby preventing metal contaminants and particles. This is to prevent the adhesion of the metal contaminants or fine particles to the workpiece w. Next, another embodiment of the present invention will be described. In the embodiment of the present invention, the same reference numerals are attached to the drawings, and appropriate 7 is a modification of the shape of the discharge port 41. As shown in the figure (a), in the modification, the inner diameter of the upper end edge of the discharge port 41 of the ground electrode 4 is larger than the discharge guide hole 62. Inner diameter, Further, the discharge port 41 has a tapered shape in which the diameter is reduced downward. Therefore, the size of the discharge port 41 is smoothly reduced as it approaches the lower surface (the treatment surface 43) of the ground electrode 40. The inner diameter of the lower edge of the discharge port 41 is processed. The size of the end portion on the side of the surface 43 is smaller than the inner diameter of the upper end edge 4 (the size of the end portion on the side of the discharge surface 42). Further, as shown in Fig. 7 (b), the lower end edge 41b of the discharge port 41 The inner diameter is the same as that in the f & IU 62; that is, the size and shape of the end portion 4lb of the processing surface side of the 'discharge port 4' is substantially the same as the size and shape of the lead-out guide hole. It is possible to prevent the abnormal discharge of the electric power or the like from falling on the inner surface of the discharge port 41, particularly on the upper and lower end edges 41a, 41b, and to prevent the external environmental gas from entering the discharge port 41. Further, the electric power is discharged in the discharge space lp. Slurry treatment 129982.doc -18- 200904262 When the rolled body passes through the discharge holes 62 and passes through the discharge port 4, it is concentrated in order, and the discharge port 41 can be strongly discharged. As a result, the processing efficiency can be improved. Instead of making the discharge port "formed as a tapered hole, the discharge port 41 can also be made The portion 44 of the side (discharge surface side) has a large diameter such that a portion 45 of the lower side (treatment surface side) of the discharge port has a small diameter, and a step 46 is formed between the upper portion 44 and the lower portion 45, and the spray is formed. The outlet 41 is formed in a stage shape. The upper side portion: 44 has a diameter larger than the diameter of the discharge guide hole 62. The diameter of the lower side portion is substantially the same as the diameter of the discharge guide hole 62. In the modification shown in Fig. 9, the covering member 7 (sleeve) is provided on the inner surface of the discharge port 41 similar to the first embodiment (the same as the drawing). The covering member 7 is connected to the ground side dielectric member. 60. The insulator of the covering member 70 is preferably a material having high plasma resistance and heat resistance, for example, may be a gas resin, quartz, glass, etc. The covering member 70 is formed into a cylindrical shape. The outer peripheral surface of the outer surface of the discharge member 41 is in contact with the inner surface of the discharge port 41. The thickness of the covering member 70 is the same as the width w of the step surface 64. Therefore, the inner circumferential surface of the covering member 70 and the inner surface of the discharge guide hole 62 are one side. The internal space of the covering member 70 in the discharge port 41 is connected to the discharge guide hole 62. The plasma-treated process gas in the discharge space lp is ejected through the discharge guide hole 62 through the internal space of the covering member 70. In this manner, the inner surface of the metal outlet 40 of the metal outlet 40 is covered by the covering member 70. Therefore, abnormal discharge can be reliably prevented. The inner circumferential surface of the covering member 70 and the inner surface of the discharge guiding hole 62 are One side, This prevents particles from being generated from the upper edge or the like of the inner peripheral surface of the covering member 70. 129982.doc -19- 200904262 =1 ' ' can be used only for the ground electrode 4 〇 and the central portion of the dielectric member. The discharge port 41 and the discharge guide hole 62 are provided. When the workability or the like is considered, the cross-sectional shape of the discharge port 41 is preferably positive but not limited thereto, and may be elliptical or long _, or may be a quadrilateral shape or the like. In the embodiment shown in Fig. U, the discharge port 41 and the nozzle outlet hole (4) are formed in a long hole shape. The long diameters of the discharge port 41 and the discharge guide hole 62 are oriented in the first direction ( Here, the length direction of the processing head is 1), the long diameter is larger than the long diameter of the discharge guide hole 62. The short diameter of the discharge σ41 is larger than the nozzle guide hole, and the internal space of the discharge guide hole 62 is integrated with The discharge port 4" is connected. A step surface 64 is formed between the inner surface of the outlet 41 and the inner surface of the discharge guide hole 62. The step surface 64 is formed along the periphery of the discharge port 41 and the discharge guide hole 62. It is a long ring shape, a plurality of long hole-shaped discharge ports 41 and a discharge guide hole Μ; The rows of the discharge ports 41 and the discharge guide holes 62 adjacent to the width direction of the processing head 1 are offset from each other in the longitudinal direction of the processing head i, and the rows are also mutually In the embodiment shown in FIG. 12, the discharge σ41 and the discharge guide hole 62 can be formed to be closer to the processing head than the long hole-shaped discharge port 41 and the discharge guide hole 62 of FIG. The slit shape of the slit-shaped discharge port 41 is longer than the length of the slit-shaped discharge guide hole 62. The slit-shaped discharge port has a larger width than the slit-shaped discharge guide hole 62. The width of the inner space of the slit-like discharge guide hole 相连 is connected to the slit-shaped discharge port 41. A gap between the inner surface of the slit-like discharge port 41 and the inner surface of the slit-shaped discharge guide hole 62 is formed with a step 129982.doc • 20-200904262 and a gap 64 of the discharge guide hole 62. The step surface μ is formed in a slit shape along the slit-like periphery to form a long ring shape.

狹縫狀之喷出口 41以及噴出導孔62於處理則之寬度方 向之中央僅配置成-組’複數個狹縫狀之喷出口 41以及喷 出導孔62亦可於處理頭1之寬度方向上空開間隔而配置。、 圖所示,長孔狀或者狹縫狀之喷出口41以及喷出導 +亦可於處理頭!之寬度方向上延伸。圖"中,複數個 噴出41以及噴出導孔62分別於處理頭工之寬度方向上延 伸,且彼此於處理頭1之長度方向上空開間隔而配置。 如圖14所示’長孔狀或狹縫狀之噴出心以及喷出導孔 62亦可相對於處理頭i之長度方向以及寬度方向而傾斜地 延伸。圖14中’傾斜之噴出口41以及噴出導孔伽處理頭 1之長度方向上空開間隔而配置有複數個。 本發明並不限定於上述實施形態,業者可於自明之範圍 内進行各種變更。 例如,較好的是噴出導孔62之剖面形狀與噴出口41之剖 面形狀為相似形狀,以俯視,只要接地電極4G露出於喷出 導孔62之内側,則喷出導孔62亦可形成為與噴出口 41不 之形狀。 除了將框架20用作介電構件6〇之位置限制機構,亦可於 接地電極4G或介電構件5〇上設置凸部等’並將該凸部用作 限制介電構件60之位置的位置限制機構,還可於處理頭工 上將用以限制介電構件60之位置的專用構件組裝為 制機構。 129982.doc -21 - 200904262 可將複數個實施形態彼此加以組合。例如,亦可使圖 11〜圖14之長孔狀或狹縫狀之喷出口 41如圖7之實施形態所 示般向下而寬度變窄。亦可如圖8之實施形態所示般,於 上述長孔狀或狹縫狀之喷出口 41之内表面形成階差。還可 於上述長孔狀或狹縫狀之喷出口 4 1上嵌入較長之環狀之絕 緣性之被覆構件(參照圖9) ’該較長之環狀之被覆構件之内 周面之全周亦可與長孔狀或狹縫狀之喷出導孔62之内周面 為一面0 ί 本發明可適用於清洗、表面改性(親水化、疏水化等)、 蝕刻、成膜等各種表面處理中。但並不限於大氣壓附近下 之電漿處理,亦可適用於真空下之電漿處理。 [產業上之可利用性] 本發明可適用於例如平板顯示器用之玻璃基板或半導體 基板之製造工程中之表面處理中。 【圖式簡單說明】 圖1係沿著圖2之I-Ι線表示本發明之第i實施形態之大氣 I’ 壓電漿處理裝置的側面剖面圖。 圖2係/。著g knqj線之上述大氣壓電漿處理裝置之處 理頭的正面剖面圖。 圖3係上述處理頭之分解立體圖。 圖4(a)係放大表示上述處理頭之電極部的正面剖面圖, 圖4(b)係沿圖4(a)iIVb_IVb線之平面圖。 圖5係以實線表示圖4中接地側介電構件位置偏移而配置 之情況,以虛線表示正規之位置之圖,圖5⑷係上述電極 129982.doc •22- 200904262 部之放大剖面圖,圖5(b)係 I ”乐/口圖5(a)之Vb-Vb線之平面圖。 圖6(a)係表示上述處理通 貝之贺出口以及噴出導孔之排列 構造之一例的底視圖。 圖6(b)係表示上述處理頭晻 ,Ώ ^ , 地主頌之噴出口以及噴出導孔之排列 構造之一例的底視圖。 圖7係表示上述電極部之噴出口之變形例,圖7⑷係放大 面圖’圖7⑻係沿圖7⑷之州-州線的平面圖。 圖8係表不上述電極部之噴出口之變形例的放大剖面 圖。 圖9係表示上述電極部之噴出口之變形例的放大剖面 圖。 圖10係表示上述處理頭之噴出構造之變形例的剖面圖。 圖11係表示上述處理頭之噴出口以及喷出導孔之形狀之 變形例的底視圖。 圖12係表不上述處理頭之噴出口以及喷出導孔之變形例 的底視圖。 圖13係表示上述處理頭之噴出口以及喷出導孔之變形例 的底視圖。 圖14係表示上述處理頭之喷出口以及喷出導孔之變形例 的底視圖。 【主要元件符號說明】 1 處理頭 la 處理空間 1 p 放電空間 129982.doc -23- 200904262 2 被處理物配置部 3 電源 20 框架(位置限制機構) 30 電場施加電極 40 底板(接地電極) 41 喷出口 41a 喷出口之放電面側之端緣 41b 喷出口之處理面側之端緣 f 42 放電面 43 處理面 60 接地側介電構件 62 喷出導孔 63 抵接面 64 階差面 70 被覆構件 W 被處理物 129982.doc -24-In the slit-shaped discharge port 41 and the discharge guide hole 62, only the plurality of slit-shaped discharge ports 41 and the discharge guide holes 62 may be disposed in the width direction of the processing head 1 in the center in the width direction of the treatment. Configured by opening the space. As shown in the figure, the long hole-shaped or slit-shaped discharge port 41 and the discharge guide can also extend in the width direction of the processing head! In the figure ", a plurality of ejections 41 and ejection orifices 62 are respectively extended in the width direction of the processing head, and are disposed at intervals in the longitudinal direction of the processing head 1. As shown in Fig. 14, the "long hole-shaped or slit-like discharge core" and the discharge guide hole 62 may extend obliquely with respect to the longitudinal direction and the width direction of the processing head i. In Fig. 14, a plurality of the inclined discharge ports 41 and the discharge guide hole processing heads 1 are arranged at intervals in the longitudinal direction. The present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. For example, it is preferable that the cross-sectional shape of the discharge guide hole 62 is similar to the cross-sectional shape of the discharge port 41, and the discharge guide hole 62 may be formed as long as the ground electrode 4G is exposed inside the discharge guide hole 62 in plan view. It is not in the shape of the discharge port 41. In addition to the frame 20 serving as the position restricting mechanism of the dielectric member 6A, a convex portion or the like may be provided on the ground electrode 4G or the dielectric member 5A and the convex portion may be used as a position for restricting the position of the dielectric member 60. The restriction mechanism can also assemble a dedicated member for restricting the position of the dielectric member 60 as a mechanism on the processing head. 129982.doc -21 - 200904262 A plurality of embodiments can be combined with each other. For example, the long hole-shaped or slit-shaped discharge port 41 of Figs. 11 to 14 may be narrowed downward as shown in the embodiment of Fig. 7. Alternatively, as shown in the embodiment of Fig. 8, a step may be formed on the inner surface of the long hole-shaped or slit-shaped discharge port 41. It is also possible to embed a long annular insulating covering member (see FIG. 9) on the long hole-shaped or slit-shaped discharge port 4 1 'the entire inner peripheral surface of the long annular covering member The circumference may be one side of the inner peripheral surface of the long hole-shaped or slit-shaped discharge guide hole 62. The present invention is applicable to various types such as cleaning, surface modification (hydrophilization, hydrophobizing, etc.), etching, film formation, and the like. Surface treatment. However, it is not limited to the plasma treatment under the vicinity of atmospheric pressure, and can also be applied to plasma treatment under vacuum. [Industrial Applicability] The present invention is applicable to, for example, a surface treatment in a glass substrate for a flat panel display or a semiconductor substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing an atmosphere I' piezoelectric slurry processing apparatus according to an i-th embodiment of the present invention taken along the line I-Ι in Fig. 2; Figure 2 is /. A front cross-sectional view of the above-described atmospheric piezoelectric slurry processing apparatus of the g knqj line. Fig. 3 is an exploded perspective view of the above processing head. Fig. 4(a) is an enlarged front elevational view showing the electrode portion of the processing head, and Fig. 4(b) is a plan view taken along line iIVb_IVb of Fig. 4(a). 5 is a solid line showing the positional displacement of the ground-side dielectric member in FIG. 4, and a normal position is indicated by a broken line, and FIG. 5(4) is an enlarged sectional view of the electrode 129982.doc • 22-200904262, Fig. 5(b) is a plan view showing the Vb-Vb line of Fig. 5(a) of Fig. 6(a). Fig. 6(a) is a bottom view showing an example of the arrangement of the above-mentioned processing outlets and the discharge guide holes. Fig. 6(b) is a bottom view showing an example of the arrangement of the discharge head and the discharge guide hole of the above-mentioned treatment head, and Fig. 7 is a modification of the discharge port of the electrode portion, Fig. 7 (4) Fig. 7 is a plan view showing a state in which the discharge port of the electrode portion is not shown. Fig. 9 is an enlarged cross-sectional view showing a modification of the discharge port of the electrode portion. Fig. 9 is a view showing a deformation of the discharge port of the electrode portion. Fig. 10 is a cross-sectional view showing a modification of the discharge structure of the processing head. Fig. 11 is a bottom view showing a modification of the shape of the discharge port and the discharge guide hole of the processing head. The change of the discharge port of the above processing head and the change of the discharge guide hole Fig. 13 is a bottom view showing a modification of the discharge port and the discharge guide hole of the processing head. Fig. 14 is a bottom view showing a modification of the discharge port and the discharge guide hole of the processing head. Explanation of main component symbols] 1 Processing head la Processing space 1 p Discharge space 129982.doc -23- 200904262 2 Object arrangement part 3 Power supply 20 Frame (position limiting mechanism) 30 Electric field application electrode 40 Base plate (ground electrode) 41 Discharge port 41a End edge 41b of the discharge port side of the discharge port End edge f 42 of the process face side of the discharge port 42 Discharge surface 43 Treatment surface 60 Ground side dielectric member 62 Discharge guide hole 63 Abutment surface 64 Step surface 70 Covering member W Treated material 129982.doc -24-

Claims (1)

200904262 十、申請專利範圍: 1' 一種電聚處理裝置’其係於放電空間内使處理氣體電製 化而喷出,並與上述放電空間之外部之被處理物配置部 上所配置的被處理物相接觸,而進行電漿表面處理的裝 置’其特徵在於具備: 電場施加電極,其連接於電源; 接地電極’其具有朝向上述電場施加電極之放電面、 及朝向上述被處理物配置部之處理面,且電性接地,·以 r λ 及 "電構件’其抵接於上述接地電極之放電面並且面向 上述電場施加電極而形成上述放電空間,且由固體介電 體所構成;且 於上述介電構件上形成有與上述放電空間相連之喷出 導孔; ' 於上述接地電極上形成有與上述喷出導孔相連並且自 上述放電面貫穿至上述處理面的喷出口;200904262 X. Patent application scope: 1' An electropolymerization processing device' is configured to eject a processing gas in a discharge space, and to be disposed on the object arrangement portion outside the discharge space The apparatus for performing plasma surface treatment is characterized in that: the electric field applying electrode is connected to a power source; and the ground electrode has a discharge surface facing the electric field application electrode and facing the workpiece arrangement portion. Treating the surface and electrically grounding, forming the discharge space by r λ and "electrical member' abutting on the discharge surface of the ground electrode and facing the electric field application electrode, and being composed of a solid dielectric; a discharge guide hole connected to the discharge space is formed on the dielectric member; and a discharge port connected to the discharge guide hole and penetrating from the discharge surface to the processing surface is formed on the ground electrode; 上述介電構件之上述噴出導孔之内表面係較上述接地 電極之上述噴出Π之内表面的上述放電面側之端緣更向 喷出口之徑向内側突出; 上述介電構件具有與上述接地電極之放電面抵接之抵 接面、及自該抵接面在-面上延長並形成上述噴出導孔 之内表面與上述喷出Π之内表面之間之階差的階差面。 如請求項1之電漿處理裝置,其中 上述喷出口之大小以及形狀係於該噴出口之貫穿方向 129982.doc 200904262 上為固定。 3’如明求項1之電漿處理裝置,其中 :述噴出口之上述處理面之端部之大小係小於上述放 電面側之端部之大小。 4·如請求項3之電聚處理裝置,其中 小,述贺出口之大小係隨著接近上述處理面而平滑地變 5·如凊求項3或4之電漿處理裝置,其中 上述嘴出口之上述處理 盥上 _之知。P之大小以及形狀係 6. '达嘴出導孔之大小以及形狀大致一致。 如請求項1之電漿處理裝置,其中 與=二置限:機構’其在相對於上述接地電極而 k攻電面千仃之面内 許有誤差; 丨電構件的位置且容 使上述介電構件位於正規之& f 2 4 τ 面沪上、”山 %之位置之狀態下的上述階差 7. 二述犬出方向之寬度係大於上述誤差之容許量。 如巧求項1之電漿處理裝置,其中 進而具備被覆構件,其由與上 體構成薄笨 江"電構件不同之絕緣 式而設置。 之赁出口之内表面之方 8·如請求項7之電漿處理裝置,其令 :述被覆構件之厚度係與上述階 之寬度大致相同。 上4大出方向 I29982.docThe inner surface of the discharge guide hole of the dielectric member protrudes radially inward from the end edge of the discharge surface side of the inner surface of the discharge port of the ground electrode; the dielectric member has the ground An abutting surface on which the discharge surface of the electrode abuts, and a step surface extending from the abutting surface on the surface to form a step difference between the inner surface of the discharge guide hole and the inner surface of the discharge port. The plasma processing apparatus according to claim 1, wherein the size and shape of the discharge port are fixed in a penetration direction of the discharge port 129982.doc 200904262. The plasma processing apparatus according to claim 1, wherein the end portion of the processing surface of the discharge port has a size smaller than an end portion of the discharge surface side. 4. The electropolymerization processing apparatus according to claim 3, wherein the size of the outlet is smoothly changed as approaching the processing surface. 5. The plasma processing apparatus of claim 3 or 4, wherein the mouth outlet is The above processing is known as _. The size and shape of P 6. The size and shape of the guide holes are approximately the same. The plasma processing apparatus of claim 1, wherein the device has an error in a plane opposite to the grounding electrode and the power tapping surface of the k; the position of the electric component and the medium The electrical component is located in the normal & f 2 4 τ face Shanghai, the above-mentioned step difference in the state of the mountain %. The width of the dog out direction is greater than the allowable amount of the above error. Further, the plasma processing apparatus further includes a covering member which is provided in an insulating type different from that of the upper body and the thin electric component. The inner surface of the outlet is provided. 8. The plasma processing apparatus of claim 7 , the order: the thickness of the covering member is substantially the same as the width of the above step. The upper 4 out direction I29982.doc
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