TW200903871A - ZnO substrate and method for processing ZnO substrate - Google Patents

ZnO substrate and method for processing ZnO substrate Download PDF

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Publication number
TW200903871A
TW200903871A TW097124261A TW97124261A TW200903871A TW 200903871 A TW200903871 A TW 200903871A TW 097124261 A TW097124261 A TW 097124261A TW 97124261 A TW97124261 A TW 97124261A TW 200903871 A TW200903871 A TW 200903871A
Authority
TW
Taiwan
Prior art keywords
substrate
zno
axis
crystal
electromotive force
Prior art date
Application number
TW097124261A
Other languages
English (en)
Chinese (zh)
Inventor
Ken Nakahara
Hiroyuki Yuji
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200903871A publication Critical patent/TW200903871A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW097124261A 2007-06-28 2008-06-27 ZnO substrate and method for processing ZnO substrate TW200903871A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007171132 2007-06-28
JP2007337435A JP2009029688A (ja) 2007-06-28 2007-12-27 ＺｎＯ系基板及びＺｎＯ系基板の処理方法

Publications (1)

Publication Number Publication Date
TW200903871A true TW200903871A (en) 2009-01-16

Family

ID=40185728

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124261A TW200903871A (en) 2007-06-28 2008-06-27 ZnO substrate and method for processing ZnO substrate

Country Status (6)

Country Link
US (1) US20100133470A1 (ja)
EP (1) EP2186930A1 (ja)
JP (1) JP2009029688A (ja)
CN (1) CN101688326A (ja)
TW (1) TW200903871A (ja)
WO (1) WO2009001919A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5004885B2 (ja) * 2008-07-15 2012-08-22 スタンレー電気株式会社 半導体構造の加工方法
DE102009039777A1 (de) * 2009-09-02 2011-03-03 Forschungszentrum Jülich GmbH Verfahren zur Herstellung und Strukturierung einer Zinkoxidschicht und Zinkoxidschicht
FR2981090B1 (fr) * 2011-10-10 2014-03-14 Commissariat Energie Atomique Procede de preparation d'oxyde de zinc zno de type p ou de znmgo de type p.
US10350725B2 (en) * 2016-02-23 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. RAMO4 substrate and manufacturing method thereof
JP6858640B2 (ja) * 2017-05-24 2021-04-14 パナソニック株式会社 ＳｃＡｌＭｇＯ４基板及び窒化物半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3498140B2 (ja) * 2001-01-25 2004-02-16 独立行政法人産業技術総合研究所 半導体発光素子
JP3749498B2 (ja) * 2002-03-26 2006-03-01 スタンレー電気株式会社 結晶成長用基板およびＺｎＯ系化合物半導体デバイス
JP4610422B2 (ja) * 2005-06-21 2011-01-12 スタンレー電気株式会社 ＺｎＯ基板の製造方法
JP5122738B2 (ja) * 2005-11-01 2013-01-16 スタンレー電気株式会社 ＺｎＯ結晶またはＺｎＯ系半導体化合物結晶の製造方法、及びＺｎＯ系発光素子の製造方法

Also Published As

Publication number Publication date
JP2009029688A (ja) 2009-02-12
WO2009001919A1 (ja) 2008-12-31
EP2186930A1 (en) 2010-05-19
CN101688326A (zh) 2010-03-31
US20100133470A1 (en) 2010-06-03

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