WO2009001919A1 - ＺｎＯ系基板及びＺｎＯ系基板の処理方法 - Google Patents

ＺｎＯ系基板及びＺｎＯ系基板の処理方法 Download PDF

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Publication number
WO2009001919A1
WO2009001919A1 PCT/JP2008/061711 JP2008061711W WO2009001919A1 WO 2009001919 A1 WO2009001919 A1 WO 2009001919A1 JP 2008061711 W JP2008061711 W JP 2008061711W WO 2009001919 A1 WO2009001919 A1 WO 2009001919A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
zno substrate
processing
crystal
zno
Prior art date
Application number
PCT/JP2008/061711
Other languages
English (en)
French (fr)
Inventor
Ken Nakahara
Hiroyuki Yuji
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to CN200880022544A priority Critical patent/CN101688326A/zh
Priority to EP08790676A priority patent/EP2186930A1/en
Priority to US12/452,328 priority patent/US20100133470A1/en
Publication of WO2009001919A1 publication Critical patent/WO2009001919A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

　結晶成長に適した表面を有するＺｎＯ系基板及びＺｎＯ系基板の処理方法を提供する。 　ＭｇＸＺｎ１－ＸＯ基板（０≦Ｘ＜１）の結晶成長を行う側の表面におけるＯＨ基の存在が略０となっているように形成する。このための基板処理方法として、ＭｇＸＺｎ１－ＸＯ基板の結晶成長を行う側の表面における最終処理は、ｐＨ３以下の酸性ウェットエッチングで行われる。以上により、Ｚｎの水酸化物の発生を防ぐことができ、ＺｎＯ系基板上の薄膜の結晶欠陥密度を非常に小さくすることができる。 　
PCT/JP2008/061711 2007-06-28 2008-06-27 ＺｎＯ系基板及びＺｎＯ系基板の処理方法 WO2009001919A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880022544A CN101688326A (zh) 2007-06-28 2008-06-27 ZnO基板以及ZnO基板的处理方法
EP08790676A EP2186930A1 (en) 2007-06-28 2008-06-27 Zno substrate and method for processing zno substrate
US12/452,328 US20100133470A1 (en) 2007-06-28 2008-06-27 ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007171132 2007-06-28
JP2007-171132 2007-06-28
JP2007337435A JP2009029688A (ja) 2007-06-28 2007-12-27 ＺｎＯ系基板及びＺｎＯ系基板の処理方法
JP2007-337435 2007-12-27

Publications (1)

Publication Number Publication Date
WO2009001919A1 true WO2009001919A1 (ja) 2008-12-31

Family

ID=40185728

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061711 WO2009001919A1 (ja) 2007-06-28 2008-06-27 ＺｎＯ系基板及びＺｎＯ系基板の処理方法

Country Status (6)

Country Link
US (1) US20100133470A1 (ja)
EP (1) EP2186930A1 (ja)
JP (1) JP2009029688A (ja)
CN (1) CN101688326A (ja)
TW (1) TW200903871A (ja)
WO (1) WO2009001919A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102687287A (zh) * 2009-09-02 2012-09-19 于利奇研究中心有限公司 氧化锌层的制备和结构化方法以及氧化锌层

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5004885B2 (ja) * 2008-07-15 2012-08-22 スタンレー電気株式会社 半導体構造の加工方法
FR2981090B1 (fr) * 2011-10-10 2014-03-14 Commissariat Energie Atomique Procede de preparation d'oxyde de zinc zno de type p ou de znmgo de type p.
US10350725B2 (en) * 2016-02-23 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. RAMO4 substrate and manufacturing method thereof
JP6858640B2 (ja) * 2017-05-24 2021-04-14 パナソニック株式会社 ＳｃＡｌＭｇＯ４基板及び窒化物半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007001787A (ja) * 2005-06-21 2007-01-11 Stanley Electric Co Ltd ＺｎＯ基板の製造方法
JP2007128936A (ja) * 2005-11-01 2007-05-24 Stanley Electric Co Ltd ＺｎＯ結晶またはＺｎＯ系半導体化合物結晶の製造方法、及びＺｎＯ系発光素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3498140B2 (ja) * 2001-01-25 2004-02-16 独立行政法人産業技術総合研究所 半導体発光素子
JP3749498B2 (ja) * 2002-03-26 2006-03-01 スタンレー電気株式会社 結晶成長用基板およびＺｎＯ系化合物半導体デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007001787A (ja) * 2005-06-21 2007-01-11 Stanley Electric Co Ltd ＺｎＯ基板の製造方法
JP2007128936A (ja) * 2005-11-01 2007-05-24 Stanley Electric Co Ltd ＺｎＯ結晶またはＺｎＯ系半導体化合物結晶の製造方法、及びＺｎＯ系発光素子の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHEVTCHENKO, S. A. ET AL., APPLIED PHYSICS LETTERS, vol. 89, 2006, pages 182111 - 182113
MAKI H. ET AL.: "Control of Surface morphology of ZnO(000-1) by hydrochloride acid", THIN SOLID FILMS, vol. 411, 2002, pages 91 - 95, XP004367235 *
ULRIKE DIEBOLD ET AL., APPLIED SURFACE SCIENCE, vol. 237, 2004, pages 336 - 342

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102687287A (zh) * 2009-09-02 2012-09-19 于利奇研究中心有限公司 氧化锌层的制备和结构化方法以及氧化锌层
US8894867B2 (en) 2009-09-02 2014-11-25 Forschungszentrum Juelich Gmbh Method for producing and structuring a zinc oxide layer and zinc oxide layer

Also Published As

Publication number Publication date
TW200903871A (en) 2009-01-16
JP2009029688A (ja) 2009-02-12
EP2186930A1 (en) 2010-05-19
US20100133470A1 (en) 2010-06-03
CN101688326A (zh) 2010-03-31

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