TW200849357A - Method for single-sided polishing of bare semiconductor wafer - Google Patents
Method for single-sided polishing of bare semiconductor wafer Download PDFInfo
- Publication number
- TW200849357A TW200849357A TW097117655A TW97117655A TW200849357A TW 200849357 A TW200849357 A TW 200849357A TW 097117655 A TW097117655 A TW 097117655A TW 97117655 A TW97117655 A TW 97117655A TW 200849357 A TW200849357 A TW 200849357A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- semiconductor wafer
- polishing cloth
- cloth
- representative
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 84
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004744 fabric Substances 0.000 claims abstract description 37
- 239000013013 elastic material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 3
- 239000012858 resilient material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007026292A DE102007026292A1 (de) | 2007-06-06 | 2007-06-06 | Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200849357A true TW200849357A (en) | 2008-12-16 |
Family
ID=39942082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097117655A TW200849357A (en) | 2007-06-06 | 2008-05-14 | Method for single-sided polishing of bare semiconductor wafer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080305722A1 (de) |
| JP (1) | JP2008306189A (de) |
| KR (1) | KR100945761B1 (de) |
| CN (1) | CN101320690A (de) |
| DE (1) | DE102007026292A1 (de) |
| SG (1) | SG148911A1 (de) |
| TW (1) | TW200849357A (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009030295B4 (de) | 2009-06-24 | 2014-05-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE102009030292B4 (de) | 2009-06-24 | 2011-12-01 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
| DE102009038941B4 (de) | 2009-08-26 | 2013-03-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE102009051008B4 (de) | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE102009052744B4 (de) | 2009-11-11 | 2013-08-29 | Siltronic Ag | Verfahren zur Politur einer Halbleiterscheibe |
| DE102010005904B4 (de) | 2010-01-27 | 2012-11-22 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE102010010885B4 (de) * | 2010-03-10 | 2017-06-08 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| DE102010013520B4 (de) | 2010-03-31 | 2013-02-07 | Siltronic Ag | Verfahren zur beidseitigen Politur einer Halbleiterscheibe |
| DE102010014874A1 (de) | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE102010024040A1 (de) | 2010-06-16 | 2011-12-22 | Siltronic Ag | Verfahren zur Politur einer Halbleiterscheibe |
| CN102263024A (zh) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | 一种单面抛光晶片的背面防腐蚀方法 |
| DE102011082777A1 (de) | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
| DE102011089362B4 (de) | 2011-12-21 | 2014-01-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
| DE102012201516A1 (de) | 2012-02-02 | 2013-08-08 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| DE102013204839A1 (de) | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
| DE102013205448A1 (de) | 2013-03-27 | 2014-10-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
| DE102013213838A1 (de) | 2013-07-15 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
| DE102015217109B4 (de) | 2015-09-08 | 2022-08-18 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5769696A (en) * | 1995-02-10 | 1998-06-23 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing of thin materials using non-baked carrier film |
| JP3106418B2 (ja) * | 1996-07-30 | 2000-11-06 | 株式会社東京精密 | 研磨装置 |
| US5944583A (en) * | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
| US6132294A (en) * | 1998-09-28 | 2000-10-17 | Siemens Aktiengesellschaft | Method of enhancing semiconductor wafer release |
| US6287174B1 (en) * | 1999-02-05 | 2001-09-11 | Rodel Holdings Inc. | Polishing pad and method of use thereof |
| US6527624B1 (en) * | 1999-03-26 | 2003-03-04 | Applied Materials, Inc. | Carrier head for providing a polishing slurry |
| US6224472B1 (en) | 1999-06-24 | 2001-05-01 | Samsung Austin Semiconductor, L.P. | Retaining ring for chemical mechanical polishing |
| US6267643B1 (en) * | 1999-08-03 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd | Slotted retaining ring for polishing head and method of using |
| EP1177859B1 (de) * | 2000-07-31 | 2009-04-15 | Ebara Corporation | Substrathalter und Poliervorrichtung |
| EP1193031A1 (de) * | 2000-09-29 | 2002-04-03 | Infineon Technologies SC300 GmbH & Co. KG | Vorrichtung zum Polieren von Scheibenartigen Gegenständen |
| DE10058305A1 (de) | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
| WO2002043921A1 (fr) * | 2000-12-01 | 2002-06-06 | Toyo Boseki Kabushiki Kaisha | Tampon de polissage, procede de fabrication de ce tampon de polissage, et couche d'amortissement pour ce tampon de polissage |
| US20030124963A1 (en) * | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Carrier head with a non-stick membrane |
| TWI289494B (en) * | 2002-01-22 | 2007-11-11 | Multi Planar Technologies Inc | Chemical mechanical polishing apparatus and method having a retaining ring with a contoured surface for slurry distribution |
| DE10217374A1 (de) * | 2002-04-18 | 2003-06-18 | Wacker Siltronic Halbleitermat | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
| US6869335B2 (en) * | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
| JP2005026538A (ja) * | 2003-07-04 | 2005-01-27 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR100600231B1 (ko) * | 2003-07-12 | 2006-07-13 | 동부일렉트로닉스 주식회사 | 씨엠피 폴리싱 헤드 및 그 동작방법 |
| US6821192B1 (en) * | 2003-09-19 | 2004-11-23 | Applied Materials, Inc. | Retaining ring for use in chemical mechanical polishing |
| TWI280177B (en) * | 2004-02-02 | 2007-05-01 | Powerchip Semiconductor Corp | Dummy process of chemical mechanical polishing process and polishing pad conditioning method |
| US6951510B1 (en) | 2004-03-12 | 2005-10-04 | Agere Systems, Inc. | Chemical mechanical polishing pad with grooves alternating between a larger groove size and a smaller groove size |
| US7201642B2 (en) * | 2004-06-17 | 2007-04-10 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Process for producing improved membranes |
| US7029375B2 (en) * | 2004-08-31 | 2006-04-18 | Tech Semiconductor Pte. Ltd. | Retaining ring structure for edge control during chemical-mechanical polishing |
| KR100632468B1 (ko) * | 2005-08-31 | 2006-10-09 | 삼성전자주식회사 | 리테이너 링, 연마 헤드 및 화학적 기계적 연마 장치 |
| JP2008062355A (ja) * | 2006-09-08 | 2008-03-21 | Fujitsu Ltd | 研磨装置及び電子装置の製造方法 |
-
2007
- 2007-06-06 DE DE102007026292A patent/DE102007026292A1/de not_active Ceased
-
2008
- 2008-04-09 SG SG200802734-4A patent/SG148911A1/en unknown
- 2008-04-28 CN CNA2008100948297A patent/CN101320690A/zh active Pending
- 2008-05-08 KR KR1020080042753A patent/KR100945761B1/ko active IP Right Grant
- 2008-05-14 TW TW097117655A patent/TW200849357A/zh unknown
- 2008-05-22 US US12/154,347 patent/US20080305722A1/en not_active Abandoned
- 2008-06-06 JP JP2008148771A patent/JP2008306189A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20080305722A1 (en) | 2008-12-11 |
| SG148911A1 (en) | 2009-01-29 |
| KR20080107258A (ko) | 2008-12-10 |
| CN101320690A (zh) | 2008-12-10 |
| DE102007026292A1 (de) | 2008-12-11 |
| JP2008306189A (ja) | 2008-12-18 |
| KR100945761B1 (ko) | 2010-03-08 |
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