JP2008306189A - 裸半導体ウェハの片面ポリシングのための方法 - Google Patents

裸半導体ウェハの片面ポリシングのための方法 Download PDF

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Publication number
JP2008306189A
JP2008306189A JP2008148771A JP2008148771A JP2008306189A JP 2008306189 A JP2008306189 A JP 2008306189A JP 2008148771 A JP2008148771 A JP 2008148771A JP 2008148771 A JP2008148771 A JP 2008148771A JP 2008306189 A JP2008306189 A JP 2008306189A
Authority
JP
Japan
Prior art keywords
polishing
semiconductor wafer
cloth
polishing cloth
membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008148771A
Other languages
English (en)
Japanese (ja)
Inventor
Klaus Roettger
レットガー クラウス
Klaus-Peter Meier
マイアー クラウス−ペーター
Norbert Graeml
グレムル ノルベルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of JP2008306189A publication Critical patent/JP2008306189A/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008148771A 2007-06-06 2008-06-06 裸半導体ウェハの片面ポリシングのための方法 Withdrawn JP2008306189A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007026292A DE102007026292A1 (de) 2007-06-06 2007-06-06 Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben

Publications (1)

Publication Number Publication Date
JP2008306189A true JP2008306189A (ja) 2008-12-18

Family

ID=39942082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008148771A Withdrawn JP2008306189A (ja) 2007-06-06 2008-06-06 裸半導体ウェハの片面ポリシングのための方法

Country Status (7)

Country Link
US (1) US20080305722A1 (de)
JP (1) JP2008306189A (de)
KR (1) KR100945761B1 (de)
CN (1) CN101320690A (de)
DE (1) DE102007026292A1 (de)
SG (1) SG148911A1 (de)
TW (1) TW200849357A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009030295B4 (de) 2009-06-24 2014-05-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009030292B4 (de) 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102009038941B4 (de) 2009-08-26 2013-03-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009051008B4 (de) 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009052744B4 (de) 2009-11-11 2013-08-29 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
DE102010005904B4 (de) 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010010885B4 (de) * 2010-03-10 2017-06-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102010013520B4 (de) 2010-03-31 2013-02-07 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
DE102010014874A1 (de) 2010-04-14 2011-10-20 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010024040A1 (de) 2010-06-16 2011-12-22 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
CN102263024A (zh) * 2011-07-18 2011-11-30 北京通美晶体技术有限公司 一种单面抛光晶片的背面防腐蚀方法
DE102011082777A1 (de) 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102011089362B4 (de) 2011-12-21 2014-01-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102012201516A1 (de) 2012-02-02 2013-08-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102013213838A1 (de) 2013-07-15 2014-09-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102015217109B4 (de) 2015-09-08 2022-08-18 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US5769696A (en) * 1995-02-10 1998-06-23 Advanced Micro Devices, Inc. Chemical-mechanical polishing of thin materials using non-baked carrier film
JP3106418B2 (ja) * 1996-07-30 2000-11-06 株式会社東京精密 研磨装置
US5944583A (en) * 1997-03-17 1999-08-31 International Business Machines Corporation Composite polish pad for CMP
US6132294A (en) * 1998-09-28 2000-10-17 Siemens Aktiengesellschaft Method of enhancing semiconductor wafer release
US6287174B1 (en) * 1999-02-05 2001-09-11 Rodel Holdings Inc. Polishing pad and method of use thereof
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
US6224472B1 (en) 1999-06-24 2001-05-01 Samsung Austin Semiconductor, L.P. Retaining ring for chemical mechanical polishing
US6267643B1 (en) * 1999-08-03 2001-07-31 Taiwan Semiconductor Manufacturing Company, Ltd Slotted retaining ring for polishing head and method of using
EP1177859B1 (de) * 2000-07-31 2009-04-15 Ebara Corporation Substrathalter und Poliervorrichtung
EP1193031A1 (de) * 2000-09-29 2002-04-03 Infineon Technologies SC300 GmbH & Co. KG Vorrichtung zum Polieren von Scheibenartigen Gegenständen
DE10058305A1 (de) 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
WO2002043921A1 (fr) * 2000-12-01 2002-06-06 Toyo Boseki Kabushiki Kaisha Tampon de polissage, procede de fabrication de ce tampon de polissage, et couche d'amortissement pour ce tampon de polissage
US20030124963A1 (en) * 2001-12-27 2003-07-03 Applied Materials, Inc. Carrier head with a non-stick membrane
TWI289494B (en) * 2002-01-22 2007-11-11 Multi Planar Technologies Inc Chemical mechanical polishing apparatus and method having a retaining ring with a contoured surface for slurry distribution
DE10217374A1 (de) * 2002-04-18 2003-06-18 Wacker Siltronic Halbleitermat Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung
US6869335B2 (en) * 2002-07-08 2005-03-22 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
JP2005026538A (ja) * 2003-07-04 2005-01-27 Renesas Technology Corp 半導体集積回路装置の製造方法
KR100600231B1 (ko) * 2003-07-12 2006-07-13 동부일렉트로닉스 주식회사 씨엠피 폴리싱 헤드 및 그 동작방법
US6821192B1 (en) * 2003-09-19 2004-11-23 Applied Materials, Inc. Retaining ring for use in chemical mechanical polishing
TWI280177B (en) * 2004-02-02 2007-05-01 Powerchip Semiconductor Corp Dummy process of chemical mechanical polishing process and polishing pad conditioning method
US6951510B1 (en) 2004-03-12 2005-10-04 Agere Systems, Inc. Chemical mechanical polishing pad with grooves alternating between a larger groove size and a smaller groove size
US7201642B2 (en) * 2004-06-17 2007-04-10 Systems On Silicon Manufacturing Co. Pte. Ltd. Process for producing improved membranes
US7029375B2 (en) * 2004-08-31 2006-04-18 Tech Semiconductor Pte. Ltd. Retaining ring structure for edge control during chemical-mechanical polishing
KR100632468B1 (ko) * 2005-08-31 2006-10-09 삼성전자주식회사 리테이너 링, 연마 헤드 및 화학적 기계적 연마 장치
JP2008062355A (ja) * 2006-09-08 2008-03-21 Fujitsu Ltd 研磨装置及び電子装置の製造方法

Also Published As

Publication number Publication date
TW200849357A (en) 2008-12-16
US20080305722A1 (en) 2008-12-11
SG148911A1 (en) 2009-01-29
KR20080107258A (ko) 2008-12-10
CN101320690A (zh) 2008-12-10
DE102007026292A1 (de) 2008-12-11
KR100945761B1 (ko) 2010-03-08

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Effective date: 20100405