200848746 九、發明說明 【發明所屬之技術領域】 本發明是關於使用於電路裝置的電性檢查的薄片狀探 針及其製造方法，更詳細地，例如關於爲了將形成於晶圓 的複數積體電性檢查在晶圓的狀態進行所使用的薄片狀探 針及其製造方法。 【先前技術】 例如，形成有多數積體電路的晶圓，或半導體元件等 的電子零件等的電路裝置的電性檢查，使用具有依據被檢 查電路裝置的被檢查電極的圖案所配置的檢查用電極的探 針裝置。傳統上，作爲此種裝置使用者排列針或刀薄片等 所形成的檢查用電極（檢查探針）的探針裝置。 被檢查電路爲形成有多數積體電路的晶圓時，爲了製 作晶圓檢查用探針裝置，成爲必須排列極多數的檢查探針 之故，因而探針裝置是成爲高價格。又，在被檢查電極的 節距小時，則製作探針裝置自體上成爲困難。又，在晶圓 一般會發生翹曲，該翹曲的狀態也因每一製品（晶圓）地 不相同之故，因而對於各該晶圓的多數被檢查電極，實際 上很難穩定地且確實地接觸於探針裝置的各該檢查探針。 爲了對應於此種問題，提案於一面隨著被檢查電極的 圖案形成有複數檢查用電極的檢查用電路基板的一面上， 配置向異性導電性薄片，而在該向異性導電性薄片上，配 置朝其厚度方向貫通於絕緣薄片而延伸的複數電極構造體 -5- 200848746 所排列的薄片狀探針的探針卡（專利 該探針卡的薄片狀探針，是朝其 的複數電極構造體，隨著被檢查電路 圖案配置於聚醯亞胺等樹脂所形成的 。例如，在直徑8英吋以上的晶圓， 10000個以上的被檢查電極，而此些 1 60 μιη以下。作爲爲了進行此些晶圓 ’成爲必須具有對應於晶圓的大面積 節距配置有5000個或10000個以上白々 又’當在晶圓與薄片狀探針的絕 的熱脹絕對量上發生很大差異，則即 周緣部藉由與晶圓的線熱脹係數具有 環構件予以固定，在熱靶試驗之際， 度變化所致的電極構造體與被檢查電 無法穩定地維持良好的電性連接狀態 成於配置有絕緣薄片的電極構造體的 所形成的框板配置於絕緣薄片上，來 向的熱脹。亦即，該薄片狀探針是具 電極部，及露出於背面的表面電極部 的短路部的電極構造體，爲由被保持 絕緣薄片的接點膜，及支撐該接點膜 成。 近年來，逐漸進步電路裝置的被 細化，惟在使用上述的薄片狀探針的 文獻1至4 )。 厚度方向貫通所延伸 裝置的被檢查電極的 柔軟圓形絕緣薄片者 形成有5 00個以上或 被檢查電極的間距是 的檢查的薄片狀探針 ，而以160μιη以下的 Ϊ電極構造體者。 緣薄片之間，面方向 使藉由將絕緣薄片的 同等的線熱脹係數的 也很難確實地防止溫 極的偏位之故，因而 。於是，將貫通孔形 接點膜位置的金屬等 規制絕緣薄片的面方 有露出於表面的表面 ，及貫通於絕緣薄片 在柔軟樹脂所形成的 的金屬製的框板所構 檢查電極的節距的微 電路裝置的電性檢查 -6- 200848746 中，即使被檢查電極的節距小時，對於被檢查對象的電路 也必須確實地得到穩定的電性地連接狀態。爲了此，將薄 片狀探針的電極構造體的表面電極部作成較高深寬比較佳 ’惟在藉由來自貫通孔內部或開口面附近的電鍍得到大約 半球形狀的表面電極的方法中，很難作成較高深寬比。 作爲得到大約半球（紡錘）形狀的較高深寬比的表面 電極部的方法，提案藉由電鍍將金屬塡充於被形成在對應 於聚醯亞胺所形成的絕緣薄片的被檢查電極的位置的貫通 孔之後，藉由對於絕緣性施以半蝕刻處理，把金屬的一部 分從絕緣薄片的一面突出，而在該突出的部分所形成的表 面電極部周圍施以無電解鍍，俾形成第2表面電極部的方 法（專利文獻5 )。 專利文獻1 :日本特開2001-15565號公報 專利文獻2 :日本特開2 0 0 2 - 1 8 4 8 2 1號公報 專利文獻3 :日本特開2 0 0 4 - 3 6 1 3 9 5號公報 專利文獻4:日本特開2006-162606號公報 專利文獻5 :日本特願200 5 -3 25 4 1 5號公報 【發明內容】 但是，因應於被檢查電極的各種製程等的請求之故， 因而作爲得到此種大約半球形狀的較高深寬比的表面電極 部的方法，還有檢討其他方法的餘地。 又，作爲此種薄片狀探針的製造方法中，具有對應於 晶圓的大面積，將5000個或10000個以上的電極構造體 200848746 以160 μηι以下節距所配置的高密度，俾將多數電極構造體 製造薄片狀探針時，很難不會缺損所有電極構造體地加以 製造，而具有製造上良率容易變低的問題點者。 又，在習知的薄片狀探針中，在檢查時若一部分電極 構造體有破損時，因很難修理電極構造體而必換薄片狀探 針本體，藉由此，也有增大晶圓檢查成本會增大的問題點 〇 本發明的目的是在於提供在晶圓等的電路裝置的電性 檢查中，即使被檢查電極的節距爲微細，對於被檢查的電 路裝置也可確實地得到穩定的電性地連接狀態的薄片狀探 針。 又，本發明的目的，是在於提供以簡單工程可得到大 約半球形狀的較高深寬比的表面電極部的薄片狀探針的製 造方法。 又，本發明的目的，是在於提供即使以高密度又多數 電極構造體來製造薄片狀探針時，也不會發生缺損所有電 極構造體的高良率可製造薄片狀探針的薄片狀探針的製造 方法。 又，本發明的目的，是在於提供在檢查使用中，電極 構造體的表面電極部發生變形等而成爲很難進行檢查使用 時’也可重新地更換電極構造體的表面電極部者的薄片狀 探針。 本發明的薄片狀探針，係將柔軟樹脂所形成的絕緣薄 片貫通於對應於被檢查對象的電路裝置的被檢查電極的圖 -8 - 200848746 案的各位置的電極構造體貫通所形成的薄片狀探針，其特 徵爲： 上述電極構造體是具備： 從絕緣薄片的表面所突出的剛性導體所形成的表面電 極部；及 形成於絕緣薄片的背面的背面電極部；及 貫通絕緣薄片的剛性導體所形成的短路部， 表面電極部與短路部，是經由導電性接合層被電性地 連接。 又，本發明的薄片狀探針，是上述導電性接合層是包 括焊錫層，爲其特徵者。 又，本發明的薄片狀探針，是上述導電性接合層是包 括鍍金層，爲其特徵者。 又，本發明的薄片狀探針，是在上述表面電極部的周 圍形成有第2表面電極部，爲其特徵者。 依照以上的本發明的薄片狀探針，藉由導電性接合層 連接表面電極部與短路部，而將藉由濕蝕刻所得到的表面 電極部由絕緣薄片的一面突出之故，因而深寬比較高。又 ，藉由在表面電極部的周圍形成有第2表面電極部，可更 提高深寬比。所以，在晶圓等的電路裝置的電性檢查中， 即使被檢查電極的節距微細，對於被檢查對象的電路裝置 也可確實地得到穩定的電性連接狀態。 本發明的薄片狀探針的製造方法，係使用於電路裝置 的電性檢查的薄片狀探針的製造方法，其特徵爲： -9- 200848746 包括： 在絕緣薄片積層有金屬薄片，而在對應於被檢查對象 的電路裝置的被檢查電極的圖案的各位置，形成有貫通絕 緣薄片的剛性導體所形成的表面電極部，在與該表面電極 部的金屬薄片相反側的端部，準備形成有第1導電層的第 1薄片的工程；及 在絕緣薄片積層有金屬薄片，而在對應於被檢查對象 的電路裝置的被檢查電極的圖案的各位置，形成有貫通絕 緣薄片的剛性導體所形成的短路部，在與該短路部的金屬 薄片相反側的端部，準備形成有第2導電層的第2薄片的 工程；及 重疊第1及第2薄片，成爲重疊著第1導電層與第2 導電層，接合各該第1導電層與第2導電層而形成導電性 接合層的工程；及 留下表面電極部而從第2薄片剝離第1薄片的工程。 又，本發明的薄片狀探針的製造方法，是從第2薄片 剝離上述第1薄片的工程之後，藉由對於由第2薄片的絕 緣薄片面突出的表面電極部施以無電解鍍處理，而在該表 面電極部的周圍形成第2表面電極部。 依照以上的本發明的製造方法，以簡單的工程可得到 大約半球（紡錘）形狀的較高深寬比的表面電極部。 依照本發明的薄片狀探針，在晶圓等的電路裝置的電 性檢查中，而使被檢查電極的節距微細，對於被檢查對象 的電路也可確實地得到穩定的電性連接狀態。 -10- 200848746 又，依照本發明的薄片狀探針，電極構造體爲藉由導 電性接合層接合著表面電極部與短路部之故，因而若表面 電極部破損時，藉由剝離導電性接合層與短路部，可從電 極構造體除去表面電極部，而藉由將新的表面電極部經由 導電性接合層連接於短路部就可修理電極構造體，可長期 地使用薄片狀探針之故，因而可達成減低晶圓檢查的檢查 費用。 依照本發明的薄片狀探針的製造方法，以簡單的工程 可得到大的半球形狀的較高深寬比的表面電極部。 又，依照本發明的薄片狀探針的製造方法，另外製造 形成表面電極部的第1薄片，及形成短路部等的第2薄片 ，可檢驗各該薄片的表面電極部，短路部等的製造狀況， 若看到缺損或異模具等的不良部分時，則避免使用不良的 薄片，僅選別僅具有良品的薄片而可製造薄片狀探針之故 ，因而可減低所得到的薄片狀探針的電極構造體不良的機 率，以高良率可製造薄片狀探針。 【實施方式】 以下，一面參照圖式一面針對於本發明加以詳細說明 〇 又，所附的各圖式是說明用者，其各部的具體性尺寸 、形狀等，是依據本案說明書的記載，及習知技術，熟習 該項技術者所理解者。 -11 - 200848746 1.薄片狀探針 第1圖是表示本發明的薄片狀探針的一實施形態的俯 視圖，第2圖是表示第1圖的χ_χ線斷面圖。第3圖是擴 大表示第1圖的薄片狀探針的接點膜的俯視圖，第4圖是 表示第3圖的X-X線斷面圖。 本實施形態的薄片狀探針，是針對於形成有複數積體 電路的8英吋等的晶圓，爲了在晶圓狀態下進行各積體電 路的電性檢查。該薄片狀探針1 〇是在對應於被檢查對象 的晶圓上的各積體電路的各位置具有形成有貫通孔1 5 Η的 框板1 5，而在該貫通孔1 5Η內配置有接點膜20。 接點膜2 0是支撐於框板1 5，如第2圖及第4圖所示 地，成爲在柔軟的絕緣薄片4 1貫通形成有電極構造體1 2 的構造。亦即，朝絕緣薄片4 1的厚度方向延伸的複數電 極構造體1 2，依照檢查對象的晶圓的被檢查電極的圖案， 互相地離間被配置於絕緣薄片4 1的面方向。 如第4圖所示地，電極構造體12是成爲一體化露出 於絕緣薄片4 1的表面的突起狀表面電極部1 2a，及露出於 絕緣薄片4 1的背面的背面電極部1 2b，及貫通於絕緣薄片 4 1的厚度方向而延伸的短路部1 2c的構造。 又，突出於與絕緣薄片4 1的框板1 5相反側的面，而 在藉由短路部12c與導電性接合層12d所接合的表面電極 部1 2a的周圍，藉由施以無電解鍍處理，形成有第2表面 電極部1 2a2。 作爲絕緣薄片4 1，使用具有柔軟性的樹脂膜。作爲絕 -12- 200848746 緣薄片4 1的形成材料，若具有電性絕緣性的 未特別地加以限定，惟例如有聚醯亞胺樹脂、 、聚酯、氟系樹脂等的樹脂薄片等。其中，在 造體1 2的位置，藉由蝕刻可容易地形成貫通 可鈾刻的材料較佳，尤其是聚醯亞胺樹脂較佳 絕緣薄片4 1的厚度是可得到良好的柔軟伯 至ΙΟΟμιη較佳，更佳爲7至7〇μιη，最佳爲1〇 作爲電極構造體1 2的材料，例如有鎳、 、銀、鈀、鐵、鈷、鎢、铑、或此些的合金或 以下，一面參照第4圖一面針對於電極構 以說明。配置於接點膜2 0的電極構造體1 2的 因應於檢查對象的晶圓的被檢查電極的節距所 爲40至250μιη，較佳爲40至150μιη。在此「 的節距」，是指鄰接的電極構造體1 2的中心 示最短的距離。又，在1個接點膜20，也依晶 電路的被檢查電極的數等，惟例如形成有數十 極構造體1 2。 突出高度h對於電極構造體12的第2 12 a2的直徑R的比率（深寬比）是〇 · 2至3較 0.2 5至2.5。藉由滿足此種條件，即使被檢查 較小時，也可容易地形成對應於被檢查電極的 構造體1 2，而對於晶圓確實地得到穩定的電性 又，將從絕緣薄片4 1的表面突出的電極 作爲核心，藉由無電解鍍形成第2表面電極咅丨 樹脂材料並 液晶聚合物 形成電極構 孔之處，爲 〇 之處，爲5 至 5 0 μ m 〇 鐵、銅、金 合金鋼等。 丨造體12加 丨節距P，是 設定，例如 電極構造體 間距離，表 圓上的積體 個以上的電 表面電極部 佳，更佳爲 電極的節距 圖案的電極 連接狀態。 構造體12a S 12a2於該 -13- 200848746 哭出的表面電極部1 2 a的周圍’就可作爲局深寬比，例如 1以上的深寬比。 第2表面電極部12a2的直徑R，是短路部12c的直徑 r的1至3倍較佳，更佳爲1至2倍。又，第2表面電極 部12a2的直徑R，是電極構造體12的節距p的30至75% 較佳，更佳爲4 0至6 0 %。 背面電路部1 2b的外徑L，是比短路部1 2c的直徑還 大，且比電極構造體1 2的節距p還小者就可以，惟儘量 大者較佳，藉由此，對於向異性導電性薄片也可確實地進 行穩定的電性連接。 短路部12c的直徑r是電極構造體12的節距p的1 5 至75%較佳，更佳爲20至65%。又，短路部12c是例如 藉由濕蝕刻形成絕緣薄片4 1的貫通孔時，有縱斷面成爲 推拔狀的情形，惟在此種情形，短路部12c的直徑r，是 作爲厚度方向的中心位置者。 針對於電極構造體1 2的具體性尺寸加以說明，則第2 表面電極部12a2的突出高度，是對於被檢查電極達成穩 定的電性連接之觀點上，15〜50μπι者較佳，更佳爲 1 5 〜3 0 μιη 〇 第2表面電極部1 2a2的直徑R，是考慮上述條件或被 檢查電極的直徑等被設定，惟例如爲30至200 μιη，較佳 爲 35 至 150μηι。 短路部1 2 c的直徑r是爲了得到充分高的強度，以1 0 至120μιη較佳，更佳爲15至ΙΟΟμιη。 -14- 200848746 背面電極部1 2b的厚度是爲了充分地提高強度而可得 到良好的重複耐久性，以〇 . 1至1 5 0 μηι較佳，更佳爲1至 7 5 μιη 〇 在電極構造體12的第2表面電極部12a2或背面電極 部1 2b，形成有高導電性金屬所成的被覆膜也可以。作爲 此種被覆膜，化學性穩定的高導電性金屬所成者較佳，作 爲此種高導電性金屬的具體例，有金、銀、鈀、铑等。 又，針對於氧化膜形成於表面的被檢查電極進行電性 檢查時，接觸薄片狀探針1 〇的電極構造體1 2與被檢查電 極，藉由電極構造體15的第2表面電極部12a2，破壞被 檢查電極表面的氧化膜而必須進行電極構造體1 5與被檢 查電極的電性連接。 爲了此，電極構造體12的第2表面電極部12a2，是 具有可容易地破壞氧化膜的程度的硬度較佳。 爲了得到此種第2表面電極部1 2 a2，形成第2表面電 極部12a2的金屬中可含有高硬度的粉末物質。 作爲此種粉末物質，可例舉例如金剛石粉末、氮化矽 、氮化硼、碳化矽、玻璃、碳奈米管等。 藉由含有適量此些非導電性的粉末物質，不會損及電 極構造體1 2的導電性，而藉由電極構造體1 2的表面電極 部1 2a可破壞形成於被檢查電極表面的氧化膜。 又，爲了容易地破壞被檢查電極表面的氧化膜，也可 將電極構造體12的表面電極部12a的形狀作成銳利的突 起狀，又，將微細凹凸形成於表面電極部1 2a的表面也可 -15- 200848746 以。 如第4圖所示地，框板1 5是具備貫通孔形成於配置 有接點膜20的位置的金屬框板1 6 ’而在金屬框板1 6的表 面全體，藉由電解澱積設有均勻厚度地所形成的聚醯亞胺 樹脂材料層1 7。 作爲構成金屬框板1 6的金屬的具體例，列舉有鐵、 銅、鎳、鉻、鈷、鎂、錳、鉬、銦、鈦、鎢或是此些的合 金或合金鋼等。 作爲金屬框板16，其線熱脹係數使用3x1 0_5/K以下 者較佳，更佳爲lxl(T7至1χ10_5/Κ，最佳爲1χ10_6至8χ 1 0_6/Κ。作爲構成此種金屬框板1 6的材料的具體例，例舉 有恆範鋼等恆範鋼型合金，彈性不變鋼等的彈性不變鋼型 合金、超級恆範範鋼、科瓦鐵鎳鈷合金、42合金等的合金 或合金鋼等。 金屬框板1 6的厚度是較佳爲3至1 50 μιη，更佳爲5 至1 0 0 μιη。若該厚度過小時，作爲支撐接點膜2 〇的框板 無法得到需要的強度的情形。 聚醯亞胺樹脂材料層17的厚度，是1至200μιη較佳 ，更佳爲5至70μηι，更佳爲1〇至50μηι。 如第1圖及第2圖所示地，在薄片狀探針1 〇的周緣 邰，可設置具有剛性的平板環狀的環構件2丨。作爲此種環 構件2 1的材料的具體例，例舉有恆範銅、超級恆範鋼等 的彈性不變鋼等的彈性不變鋼型合金、科瓦鐵、鎳鈷合金 、42合金等的低熱脹金屬材料、氧化鋁、碳化矽、氮化矽 -16- 200848746 等的陶瓷材料。 藉由此種環構件2 1，以其剛性來支撐薄片狀探針1 〇 ，而在下述的探針卡中，例如在形成於環構件2 1的孔， 藉由插通設於探針卡的導銷，或是藉由嵌合設於環構件2 1 ，及探針卡周緣部的周狀階段差部，可將配置於薄片狀探 針1 〇的接點膜20的電極構造體i 2，與被檢查物的被檢查 電極或向異性導電性連接器的導電部容易地對位，又在被 使用於重複檢查時，也可確實地防止對於被檢查物的黏貼 ，而從電極構造體1 2的所定位置的偏位。 又，藉由該環構件2 1，控制絕緣薄片4 1的面方向的 熱脹，可附與在熱靶試驗中防止依溫度變化所致的電極構 造體1 2與被檢查電極的偏位的作用。 依照本實施形態的薄片狀探針1 〇，藉由對應於形成有 檢查對象的電路裝置的被檢查電極的電極領域而形成複數 貫通孔1 5 Η的框板1 5，支撐著被配置於此些的各貫通孔 15Η的接點膜20之故，因而可減小配置於貫通孔15Η的 接點膜20的面積。 此種面積小的接點膜20，是該絕緣薄片4 1的面方向 的熱脹的絕對量小之故，因而成爲藉由框板1 5可確實地 規制絕緣薄片4 1的熱脹。 因此，檢查對象例如直徑8英吋以上的大面積的晶圓 或被檢查電極的節距極小的電路裝置，也在熱靶試驗之際 ，確實地防止依溫度變化的電極構造體1 2與被檢查電極 的偏位之故，因而穩定地可維持良好的電性連接狀態。 -17- 200848746 2 ·薄片狀探針的製造方法 以下’針對於本發明的一實施形態的薄片狀探針的製 造方法加以說明。 首先，如第5圖所示地，準備具有絕緣薄片3 1，及被 積層於該絕緣薄片3 1的金屬層3 2的第1薄片3 0。又，視 需要’在第1薄片30積層有保護薄膜等的其他層也可以 ，惟在此省略圖示。 作爲第1薄片3 0，例如可使用銅所形成金屬層被積層 於聚醯亞胺薄片的一般市售的積層聚醯亞胺薄片。 以下’如第6圖所示地，在對應於須形成的電極構造 體1 2的圖案的位置，將貫通孔3丨η形成於絕緣薄片3 i。 該貫通孔3 1 Η ’是例如以如下方法可形成。首先，在 絕緣薄片3 1的表面，形成複數圖案孔形成於對應於須形 成的電極構造體1 2的圖案的位置的蝕刻用光阻膜。在此 ’作爲形成光阻膜的材料，也可使用作爲鈾刻用的光阻所 使用的各種者。 之後，對於絕緣薄片3 1，在經由光阻膜的圖案孔所露 出的部分施以鈾刻處理而除去該當部分，藉由此，貫通孔 3 1 Η形成於絕緣薄片3 1。在此，作爲絕緣薄片3 1而使用 聚醯亞胺樹脂所形成者時，若利用濕蝕刻形成貫通孔3 1 Η ，則藉由選擇蝕刻處理條件，貫通孔3 1 Η的形狀是隨著金 屬層3 2的方向成爲小徑的推拔狀。作爲用以此種濕蝕刻 處理的蝕刻液可使用胺系鈾刻液、聯胺系水溶液、氫氧化 -18- 200848746 鉀水溶液等。 又，貫通孔31H是並不一定形成推拔狀，藉由例如雷 射加工形成未具有推拔角的圓柱狀也可以。 與貫通孔3 1 Η的金屬層3 2相反側的露出面的直徑， 是例如封於厚度25至50μιη的絕緣薄片31爲50至ΙΟΟμιη 〇 形成貫通孔3 1 Η之後，光阻膜是被除去。作成如此在 絕緣薄片3 1形成貫通孔3 1 Η之後，將金屬層3 2作爲電極 施行電解鍍處理，藉由將金屬塡充於絕緣薄片3 1的貫通 孔3 1 Η內，如第7圖所示地，得到須形成的電極構造體 1 2的剛性導體所形成的表面電極部1 2a。 又，如第8圖所示地，在與表面電極部12a的金屬層 3 2相反側的露出面形成第1導電層3 3。 作爲剛性導體所形成的表面電極部1 2a的構成金屬材 料，例如可使用鎳、銅等。 作爲第1導電層3 3的構成金屬材料，例如可使用含 有鉍、錫、鋅、銦等的低融點化金屬成分的焊錫合金、電 鍍金、銀等，含有導電性金屬粒子的導電性接著劑。 積層有表示於第8圖的表面電極部12a與第1導電層 3 3的構造，是例如將第1薄片3 0連續地浸漬於表面電極 部1 2a用及第1導電層3 3用的鍍浴可得到。 在使用導電性接著劑時，於表面電極部1 2a的表面藉 由絲網印刷來印刷含有導電性接著劑的導電性接著劑就可 得到。 -19- 200848746 一方面，與以上的第1薄片30不相同地，準備表示 於第9圖的第2薄片40。作爲第2薄片40，與第1薄片 3 0同樣地，可使用具有例如銅所形成的金屬層被積層於聚 醯亞胺薄片的一般市售的積層聚醯亞胺薄片等的絕緣薄片 4 1，及積層於該絕緣薄片4 1的金屬層4 2。又，視需要， 在第2薄片40積層有保護薄膜等的其他層也可以，惟在 此省略圖示。 如第9圖所示地，在第2薄片4 0，在對應於須形成的 電極構造體1 2的圖案的位置中，將貫通孔4 1 Η形成於絕 緣薄片4 1之後，將金屬層4 2作爲電極施以電解鍍處理， 藉由將金屬塡充於絕緣薄片4 1的貫通孔4 1 Η內，得到須 形成的電極構造體1 2的短路部1 2 c。 又，如第10圖所示地，在與短路部12c的金屬層42 相反側的露出面形成第2導電層43。 作爲第2導電層43的構成金屬材料，例如可使用含 有鉍、錫、鋅、銦等的低融點化金屬成分的焊錫合金、電 鍍金、銀等，含有導電性金屬粒子的導電性接著劑。 積層有表示於第10圖的短路部12c與第2導電層43 的構造，是例如將第2薄片40連續地浸漬於短路部1 2c 用及第2導電層43用的鍍浴就可得到。在使用導電性接 著劑時，於短路部1 2c的表面藉由絲網印刷，塗佈導電性 接著劑就可得到。 在以上，貫通孔41 Η是例如與第1薄片3 0同樣，在 絕緣薄片4 1的表面，將形成有複數圖案孔的蝕刻用的光 -20- 200848746 阻膜形成對應於須形成的電極構造體1 2的圖案的位置之 後，對於絕緣薄片4 1，藉由在經由光阻膜的圖案孔露出的 部分施以鈾刻處理來除去該當部分可形成。在此，作爲絕 緣薄片4 1使用聚醯亞胺樹脂所形成者時，藉由濕鈾刻形 成貫通孔4 1 Η，貫通孔4 1 Η的形狀，是可作成大約圓柱狀 或是推拔狀，惟藉由選擇蝕刻處理條件，可作成因應於欲 得到的短路部1 2c的適當形狀。 作爲短路部1 2 c的構成金屬材料，例如可使用鎳、銅 等。 積層有表示於第10圖的短路部12c與第2導電層43 的構造，是例如將第2薄片40連續地浸漬於短路部12c 用及第2導電層43用的鍍浴就可得到。 如以上所述地，得到第8圖的第1薄片3 0，及第1 0 圖的第2薄片40之後，如第11圖所示地，重疊有第1導 電層33與第2導電層43般地，重疊第1薄片3〇及第2 薄片40，而在須形成電極構造體12的各該位置，接合各 該第1導電層33與第2導電層43而形成導電性接合層 1 2d ° 第1導電層33與第2導電層43的接合，是例如藉由 將金屬層3 2、42作爲電極的通電所致的發熱來熔解第1 導電層與第2導電層來進行接合的方法，將第1薄片30 與第2薄片40之積層體收納於爐等的加熱室內而進行加 熱的方法，壓接第1薄片30與第2薄片40的方法等可進 行。 -21 - 200848746 之後，如第12圖所示地，留下表面電極部1 2 a而從 第2薄片40機械式地剝離第1薄片30。 然後，如第1 3圖所示地，在突出有絕緣薄片4 1的表 面電極部1 2a的面，施以無電解鍍處理。藉由此，在表面 電極部1 2a的周圍形成大約半球（紡錘）狀的第2表面電 極邰12a2。第2表面電極部12a2的厚度是例如1至ΙΟμπι 〇 作爲第2表面電極部12a2的構成金屬材料，可例舉 铑、鈀、金、鎳-金合金電鍍等等。 以下’如第14圖所示地，視需要，藉由在第2表面 電極部12a2的周圍施以鍍金等的電鍍處理，而在背面電 極部12b的表面，形成高導電性金屬所構成的被覆膜13。 然後，如第15圖所示地，在第2薄片40的金屬層42 表面形成光阻層4 5，如第1 6圖所示地，留下成爲電極構 造體1 2的背面電極部1 2b的部分而除去光阻層4 5。 之後，將光阻層45作爲罩幕而對於金屬層42施以蝕 刻處理，如第1 7圖所示地，形成背面電極部1 2b。 然後，如第1 8圖所示地，除去背面電極部1 2 b上的 光阻層45，如第1 9圖所示地，在絕緣薄片4 1的背面電極 部12b側的表面，接著框板15。 框板1 5是例如在對應於被檢查對象的晶圓上的各積 體電路的各位置，準備藉由衝孔、雷射加工、蝕刻加工等 形成有複數貫通孔的金屬框板1 6，而在該金屬框板1 6的 至少一方的面全體，藉由電解澱積形成聚醯亞胺樹脂材料 -22- 200848746 層1 7就可得到。 構成聚醯亞胺樹脂材料層1 7的聚醯亞胺樹脂材料， 是聚醯亞胺樹脂單獨者，與其他樹脂的混合物或與其他樹 脂的反應生成物也可以。在此，所謂「聚醯亞胺樹脂」是 指除了聚醯亞胺樹脂本身者之外，也含有其先驅體（聚醯 亞胺基酸及其部分醯亞胺化物）者。作爲聚醯亞胺樹脂， 可使用可電解澱積者。具體上，若爲離子性基所導入者並 未特別加以限定，可使用各種者。 作爲電解液的製造方法，例如可列舉（I )調配在有 機溶媒中溶解有聚醯亞胺樹脂或與此不相同的聚合物所成 的樹脂溶液之後，將該樹脂溶液分散於水性媒體中，進行 除去有機溶媒的方法，（Π )調配聚醯亞胺樹脂粒子或聚 醯亞胺樹脂與其他聚合物所形成的樹脂粒子，而將此些粒 子分散於水性媒體中的方法等。此些方法，是視需要可在 加熱下實施。 作爲聚醯亞胺樹脂材料的電解澱積方法，有控制電流 的方法，控制電壓的方法等，分別具有實施電解澱積的期 間保持一定値的方法，因應於電解澱積的進行使之變化的 方法等。電解澱積裝置雖簡單，但容易地可控制所得到的 聚醯亞胺樹脂材料層1 7的厚度，而以利用定電壓法較佳 。具體上的電解澱積條件，是考慮聚醯亞胺樹脂的種類， 須形成的聚醯亞胺樹脂材料層1 7的厚度等而被適當地設 定，例如處理電壓爲2至100V，處理期間爲0.5至30分 鐘。又，藉由使用脈衝狀地施加電壓或電流的脈衝法，就 -23- 200848746 可防止電解澱積時發生氣泡，而可形成高品質的電解澱積 膜。 作爲電解澱積液，使用含有具有交聯性官能團的聚醯 亞胺樹脂者的情形，電解澱積該當聚醯亞胺樹脂材料之後 ，爲了除去多餘的電解澱積液來進行洗淨，以適當溫度進 行乾燥處理。作爲乾燥處理的條件，處理溫度爲例如60 至1 2 0 °C，而處理時間爲例如5至3 0分鐘。 藉由以上所說明的電解澱積工程形成有聚醯亞胺樹脂 材料層1 7的框板1 5，是對於第1 9圖的絕緣薄片4 1，接 觸著框板1 5的聚醯亞胺樹脂材料層1 7與絕緣薄片4 1的 表面，而且重疊成電極構造體12配置於框板15的貫通 孔15H，在該狀態下，藉由一面烘乾處理聚醯亞胺17 — 面施加壓力而熱壓接兩者，被互相地接著。藉由此，如第 1 9圖所示地，可得到框板1 5與絕緣薄片4 1的積層體。 如此地一體化框板1 5與絕緣薄片4 1之後，視需要， 如第1圖及第2圖所示地，藉由將環構件21黏貼於框板 1 5的周緣部，可得到薄片狀探針1 0。 具有如此地所得到的剛性導體所形成的表面電極部與 剛性導體所形成的短路部藉由導電性接合層所接合的電極 構造體的薄片狀探針，是若表面電極部損壞時，則經由導 電性接合層可脫離表面電極部與短路部。例如，藉由在表 面電極部與第1導電層之間進行剝離，或在第1導電層與 第2導電層之間進行剝離，或是在第2導電層與短路部之 間進行剝離，就可從電極構造體脫離表面電極部。 -24- 200848746 若在導電性接合層具有焊錫層時，則藉由僅加熱損壞 的電極構造體部分來融解焊錫層’容易地可脫離表面電極 部。 又，導電性接合層爲接合焊錫層與鑛金屬所形成時’ 則僅加熱損壞的電極構造體部分’藉由熔融焊錫層’容易 地由焊錫層與鍍金層的界面進行剝離’而且在脫離表面電 極部之後，藉由重新地積層具有焊錫層的表面電極部使之 通電而進行發熱，就可加以接合。而容易地可更換、修理 電極構造體的表面電極部較佳。 又，導電性接合層爲導電性接合劑所構成時，從短路 部可機械式地剝離表面電極部，而藉由重新地積層形成導 電性接著劑層的表面電極部進行接著’可容易地更換、修 理電極構造體的表面電極部較佳。 又，依照本發明的薄片狀探針的製造方法，另外地製 造形成表面電極部的第1薄片，及形成短路部等的第2薄 片，可檢驗各該薄片的表面電極部，短路部等的製造狀況 ，若發現到缺損或異模具等不良部分時，則避免使用具有 不良的薄片，僅選別僅具有良品的薄片而可製造薄片狀探 針之故，因而可減低所得到的薄片狀探針的電極構造體具 不良的機率’因此製造薄片狀探針的良率成爲高者。 3 ·探針及電路裝置的檢查裝置 第20圖是表示使用藉由本發明的方法所製造的薄片 狀探針1 0的電路裝置的檢查裝置的槪略構成的斷面圖， -25- 200848746 第21圖是表示該檢查裝置的探針卡的槪略構成的斷面圖 ，第22圖是擴大表示該探針卡部分的斷面圖。在第21圖 中，（a )表示分解檢查用電路基板，向異性導電性連接 器，及薄片狀探針的狀態，（b )是表示定位固定此些的 狀態。 該電路裝置的檢查裝置，是針對於形成在晶圓的複數 各該積體電路’在晶圓的狀態下進行積體電路的電性檢查 所用者。 如第2 G圖所示地，該電路裝置的檢查裝置，是具備 進行被檢查電路裝置的晶圓90的各該被檢查電極9 1與測 試器的電性連接的探針卡5 0。 如第2 1圖擴大所示地，該探針卡5 〇是具備檢查用電 路基板6 0，及向異性導電性連接器7 0，及薄片狀探針1 0 〇 在檢查用電路基板60的表面，依照對應於形成在晶 圓90的所有積體電路的被檢查電極91的圖案的圖案形成 有複數檢查電極6 1。 向異性導電性連接器70是具備：對應於形成在晶圓 9 0的所有積體電路的被檢查電極9 1所配置的電極領域而 形成有複數開口 72的框板7 1，及配置於該框板7 1成爲分 別塞住一開口 72，而被固定於框板7 1的開口 72的緣部並 予以支撐的複數向異性導電性薄片73。 各該向異性導電性薄片73是形成有藉由彈性高分子 物質所形成，依照對應於形成在晶圓9 0的一電極領域的 -26- 200848746 被檢查電極91的圖案的圖案所形成的朝各該厚度方向延 伸的複數導電部74，及分別互相地絕緣此些導電部74的 絕緣部75。 如第2 1圖所示地，在檢查用電路基板6 0的表面配置 有向異性導電性連接器70，而在向異性導電性連接器70 的表面，配置有依照對應於晶圓90的所有積體電路的被 檢查電極91的圖案的圖案配置有複數電極構造體12的薄 片狀探針1 〇。 向異性導電性連接器70是藉由導銷52插通於形成在 框板7 1的定位用未圖示的貫通孔，把檢查用電路基板6 〇 的檢查電極61與導電部74被固定成一致。 薄片狀探針1 〇是藉由嵌合著被接著於該外緣部的環 構件3 5，及裝置於與檢查用電路基板60的檢查電極6 1相 反側的面的加壓板80的階段差部，成爲把電極構造體i 2 與向異性導電性連接器7 0的導電部7 4可定位成一致。 又，向異性導電性連接器70及薄片狀探針1 〇的定位 方法’是並未被限定於上述的方法者，此以外，視狀況可 適用適當的方法。 作爲構成檢查用電路基板6 0的基板材料，可使用傳 統公知的各種基板，作爲該具體例，列舉玻璃纖維增強型 環氧樹脂、玻璃纖維增強型酚樹脂、玻璃纖維增強型聚醯 亞胺樹脂、玻璃纖維增強型雙馬來酸醯亞胺三嗪樹脂等的 複合樹脂等的複合樹脂材料、玻璃、二氧化矽、氧化鋁等 的陶瓷材料等。 -27- 200848746200848746 IX. OBJECT OF THE INVENTION [Technical Field] The present invention relates to a sheet-like probe for electrical inspection of a circuit device and a method of manufacturing the same, and more particularly, for example, in order to form a plurality of integrated bodies formed on a wafer The sheet-like probe used in the state of the wafer is electrically inspected and a method of manufacturing the same. [Prior Art] For example, an electrical inspection of a circuit device in which a plurality of integrated circuits are formed, or an electronic component such as a semiconductor element, is used for inspection using a pattern according to the electrode to be inspected of the circuit to be inspected. Probe device for the electrode. Conventionally, as a device of such a device, a probe device for arranging an inspection electrode (inspection probe) formed by a needle or a blade or the like is arranged. When the circuit to be inspected is a wafer in which a plurality of integrated circuits are formed, in order to manufacture a probe device for wafer inspection, it is necessary to arrange a large number of inspection probes, and thus the probe device is expensive. Further, when the pitch of the electrode to be inspected is small, it becomes difficult to fabricate the probe device itself. Moreover, warpage generally occurs in the wafer, and the state of the warpage is also different for each product (wafer). Therefore, it is practically difficult for a plurality of inspected electrodes of the wafer to be stably and Each of the inspection probes of the probe device is surely contacted. In order to cope with such a problem, it is proposed to arrange an anisotropic conductive sheet on one surface of the inspection circuit board on which the plurality of inspection electrodes are formed along the pattern of the electrode to be inspected, and to arrange the anisotropic conductive sheet on the anisotropic conductive sheet. a probe card of a flaky probe arranged in a plurality of electrode structures 5 - 200848746 extending in the thickness direction in the direction of the thickness of the insulating sheet (the flaky probe of the probe card is a plurality of electrode structures toward the same) The pattern of the circuit to be inspected is formed by a resin such as polyimide. For example, in a wafer having a diameter of 8 inches or more, 10,000 or more electrodes to be inspected, and 1 to 60 μm or less. These wafers 'must have a large area pitch corresponding to the wafer with 5,000 or more than 10,000 white spots and 'when the absolute amount of thermal expansion of the wafer and the flaky probe is very different, That is, the peripheral portion is fixed by having a ring member with the linear thermal expansion coefficient of the wafer, and the electrode structure and the electric power to be inspected cannot be stably maintained during the thermal target test. In a good electrical connection state, the formed frame plate of the electrode structure in which the insulating sheet is disposed is disposed on the insulating sheet to thermally expand. That is, the sheet-like probe has an electrode portion and is exposed on the back surface. The electrode structure of the short-circuit portion of the surface electrode portion is formed by a contact film that holds the insulating sheet, and supports the contact film. In recent years, the circuit device has been gradually refined, but the above-mentioned sheet-like shape is used. Probes 1 to 4). A soft circular insulating sheet that penetrates the electrode to be inspected of the extending device in the thickness direction is formed of a sheet-like probe having an inspection of 500 or more or a pitch of the electrode to be inspected, and a structure of a crucible electrode of 160 μm or less. In the surface direction of the edge sheets, it is difficult to reliably prevent the temperature from being displaced by the same coefficient of thermal expansion of the insulating sheets. Then, the surface of the conductive insulating sheet such as the metal at the position of the through-hole contact film is exposed on the surface of the surface, and the pitch of the inspection electrode is formed through the metal frame plate formed of the flexible resin. In the electrical inspection of the microcircuit device -6-200848746, even if the pitch of the electrode to be inspected is small, it is necessary to reliably obtain a stable electrical connection state with respect to the circuit to be inspected. For this reason, it is preferable to form the surface electrode portion of the electrode structure of the sheet-like probe to have a relatively high depth and width. However, it is difficult to obtain a surface electrode having a hemispherical shape by electroplating from the inside of the through hole or the vicinity of the opening surface. Make a higher aspect ratio. As a method of obtaining a surface electrode portion having a higher aspect ratio of a hemispherical (spindle) shape, it is proposed to fill a metal by electroplating at a position of an electrode to be inspected which is formed corresponding to an insulating sheet formed of polyimide. After the through hole, a part of the metal is protruded from one surface of the insulating sheet by a half etching treatment for the insulating property, and electroless plating is applied around the surface electrode portion formed in the protruding portion, and the second surface is formed. Method of electrode part (Patent Document 5). Patent Document 1: Japanese Laid-Open Patent Publication No. 2001-15565 (Patent Document 2) Japanese Patent Publication No. 2 0 0 2 - 1 8 4 8 2 1 Patent Document 3: Japanese Special Opening 2 0 0 4 - 3 6 1 3 9 5 Japanese Patent Application Laid-Open No. Hei. No. 2006-162606 (Patent Document 5) Japanese Patent Application No. Hei. No. 2005-162. Therefore, as a method of obtaining such a surface electrode portion having a high aspect ratio of a hemispherical shape, there is room for reviewing other methods. In addition, as a method of manufacturing such a sheet-like probe, a high density of 5,000 or 10,000 or more electrode structures 200848746 at a pitch of 160 μm or less is required in accordance with a large area of the wafer, and the majority is When the sheet-like probe is manufactured by the electrode structure, it is difficult to manufacture without ruining all the electrode structures, and there is a problem that the manufacturing yield is likely to be low. Further, in the conventional sheet-like probe, when some of the electrode structures are damaged during the inspection, it is difficult to repair the electrode structure, and the sheet-like probe body must be replaced, whereby the wafer inspection is also increased. The problem of the increase in cost is to provide a circuit device such as a wafer that can be reliably stabilized for the circuit device to be inspected even if the pitch of the electrode to be inspected is fine. A flaky probe that is electrically connected. Further, an object of the present invention is to provide a method for producing a sheet-like probe which can obtain a surface electrode portion having a high aspect ratio of a hemispherical shape by simple engineering. Further, an object of the present invention is to provide a flaky probe capable of producing a flaky probe without deteriorating the high-yield of all the electrode structures even when a flaky probe is produced at a high density and a plurality of electrode structures. Manufacturing method. In addition, it is an object of the present invention to provide a sheet-like shape in which the surface electrode portion of the electrode structure can be replaced again when the surface electrode portion of the electrode structure is deformed or the like, which is difficult to perform inspection. Probe. In the sheet-like probe of the present invention, an insulating sheet formed of a soft resin is passed through a sheet formed by passing through an electrode structure at each position of FIG. -8 to 200848746 corresponding to the electrode to be inspected of the circuit device to be inspected. The electrode assembly includes: a surface electrode portion formed of a rigid conductor protruding from a surface of the insulating sheet; and a back electrode portion formed on a back surface of the insulating sheet; and a rigidity penetrating the insulating sheet The short-circuit portion formed by the conductor, the surface electrode portion and the short-circuit portion are electrically connected via the conductive bonding layer. Further, in the sheet-like probe of the present invention, the conductive bonding layer is characterized by including a solder layer. Further, in the sheet-like probe of the present invention, the conductive bonding layer is characterized by including a gold plating layer. Further, the sheet-like probe of the present invention is characterized in that a second surface electrode portion is formed around the surface electrode portion. According to the above-described sheet-like probe of the present invention, the surface electrode portion and the short-circuit portion are connected by the conductive bonding layer, and the surface electrode portion obtained by the wet etching is protruded from one surface of the insulating sheet, thereby comparing the width and width high. Further, by forming the second surface electrode portion around the surface electrode portion, the aspect ratio can be further improved. Therefore, in the electrical inspection of the circuit device such as a wafer, even if the pitch of the electrode to be inspected is fine, a stable electrical connection state can be surely obtained for the circuit device to be inspected. The method for producing a sheet-like probe according to the present invention is a method for producing a sheet-like probe for electrical inspection of a circuit device, characterized in that: -9-200848746 includes: laminating a metal foil on the insulating sheet, and corresponding thereto A surface electrode portion formed of a rigid conductor penetrating through the insulating sheet is formed at each position of the pattern of the electrode to be inspected of the circuit device to be inspected, and is formed at an end portion on the opposite side to the metal foil of the surface electrode portion. a process of forming a first sheet of the first conductive layer; and forming a metal foil on the insulating sheet, and forming a rigid conductor penetrating the insulating sheet at each position corresponding to the pattern of the electrode to be inspected of the circuit device to be inspected In the short-circuit portion, the second sheet on which the second conductive layer is formed is prepared at the end portion on the opposite side to the metal sheet of the short-circuit portion; and the first and second sheets are overlapped, and the first conductive layer and the first layer are stacked 2 conductive layer, bonding each of the first conductive layer and the second conductive layer to form a conductive bonding layer; and leaving the surface electrode portion to peel the first sheet from the second sheet Project. Further, in the method for producing a sheet-like probe of the present invention, after the first sheet is peeled off from the second sheet, electroless plating treatment is applied to the surface electrode portion protruding from the insulating sheet surface of the second sheet. On the other hand, a second surface electrode portion is formed around the surface electrode portion. According to the above manufacturing method of the present invention, a surface electrode portion having a high aspect ratio of a hemispherical (spindle) shape can be obtained by simple engineering. According to the sheet-like probe of the present invention, in the electrical inspection of the circuit device such as a wafer, the pitch of the electrode to be inspected is made fine, and a stable electrical connection state can be surely obtained for the circuit to be inspected. -10- 200848746 Further, according to the flaky probe of the present invention, the electrode structure is formed by bonding the surface electrode portion and the short-circuit portion by the conductive bonding layer. Therefore, when the surface electrode portion is broken, the conductive bonding is performed by peeling off. In the layer and the short-circuit portion, the surface electrode portion can be removed from the electrode structure, and the electrode structure can be repaired by connecting the new surface electrode portion to the short-circuit portion via the conductive bonding layer, and the sheet-like probe can be used for a long period of time. Therefore, the inspection cost of the wafer inspection can be reduced. According to the method for producing a sheet-like probe of the present invention, a large hemispherical surface electrode portion having a high aspect ratio can be obtained by simple engineering. Further, according to the method for producing a sheet-like probe of the present invention, the first sheet forming the surface electrode portion and the second sheet forming the short-circuit portion can be separately produced, and the surface electrode portion of each sheet can be inspected, and the short-circuit portion can be manufactured. In the case where a defective portion such as a defect or a different mold is observed, it is possible to avoid the use of a defective sheet, and it is possible to manufacture a sheet-like probe by selecting only a sheet having a good product, thereby reducing the obtained sheet-like probe. The probability of the electrode structure being defective can be used to produce a flaky probe at a high yield. [Embodiment] Hereinafter, the present invention will be described in detail with reference to the drawings, and the attached drawings are intended to illustrate the specific dimensions and shapes of the respective parts, and are based on the description of the present specification, and The prior art is familiar to those skilled in the art. -11 - 200848746 1. Fig. 1 is a plan view showing an embodiment of a sheet-like probe of the present invention, and Fig. 2 is a cross-sectional view taken along line χ_χ of Fig. 1 . Fig. 3 is a plan view showing a joint film in which the sheet-like probe of Fig. 1 is enlarged, and Fig. 4 is a cross-sectional view taken along line X-X of Fig. 3; The sheet-like probe of the present embodiment is a wafer of 8 inches or the like in which a plurality of integrated circuits are formed, and electrical inspection of each integrated circuit is performed in a wafer state. The sheet-like probe 1 具有 has a frame plate 15 in which each of the integrated circuits on the wafer corresponding to the object to be inspected is formed with a through hole 15 5 , and is disposed in the through hole 15 5 Contact film 20. The contact film 20 is supported by the frame plate 15 and has a structure in which the electrode structure 1 2 is formed to penetrate through the flexible insulating sheet 41 as shown in Figs. 2 and 4 . In other words, the plurality of electrode structures 1 extending in the thickness direction of the insulating sheet 41 are disposed in the surface direction of the insulating sheet 41 in accordance with the pattern of the electrode to be inspected of the wafer to be inspected. As shown in Fig. 4, the electrode structure body 12 is a protrusion-shaped surface electrode portion 12a that is integrally exposed on the surface of the insulating sheet 41, and a back surface electrode portion 12b that is exposed on the back surface of the insulating sheet 41, and The structure of the short-circuit portion 1 2c that extends through the thickness direction of the insulating sheet 41. Further, it protrudes from the surface on the opposite side to the frame plate 15 of the insulating sheet 41, and is subjected to electroless plating around the surface electrode portion 12a joined to the conductive bonding layer 12d by the short-circuit portion 12c. The second surface electrode portion 12a2 is formed by the treatment. As the insulating sheet 41, a flexible resin film is used. The material for forming the edge sheet 4 1 is not particularly limited as long as it has electrical insulating properties, and examples thereof include a resin sheet such as a polyimide resin, a polyester, or a fluorine resin. Wherein, at the position of the body 12, it is preferable to form a material which can penetrate the uranium engraving by etching, and in particular, the thickness of the insulating film 4 1 is preferably a soft softness to the ΙΟΟμιη. More preferably, it is preferably 7 to 7 Å μm, and most preferably 1 Å as a material of the electrode structure 1 2, for example, nickel, silver, palladium, iron, cobalt, tungsten, rhenium, or an alloy thereof or below. With reference to Fig. 4, the description will be made for the electrode structure. The pitch of the electrode to be inspected of the wafer to be inspected in the electrode structure 1 2 of the contact film 20 is 40 to 250 μm, preferably 40 to 150 μm. Here, the "pitch" means the shortest distance between the centers of the adjacent electrode structures 1 2 . Further, in the one contact film 20, the number of the electrodes to be inspected in the crystal circuit or the like is also formed, for example, the tens electrode structure 1 2 is formed. The ratio (depth ratio) of the protrusion height h to the diameter R of the 2 12 a2 of the electrode structure 12 is 〇 · 2 to 3 is 0. 2 5 to 2. 5. By satisfying such a condition, even when the inspection is small, the structure 1 2 corresponding to the electrode to be inspected can be easily formed, and the stable electrical property is surely obtained for the wafer, and the insulating sheet 4 1 The surface-exposed electrode serves as a core, and the second surface electrode 咅丨 resin material is formed by electroless plating, and the liquid crystal polymer forms an electrode constituting hole, which is 5 to 50 μm yttrium iron, copper, gold. Alloy steel, etc. The crucible 12 is 设定 pitch P, which is set, for example, the distance between the electrode structures, and more than one electric surface electrode portion on the circle, and more preferably the electrode connection pattern of the electrode pitch pattern. The structure 12a S 12a2 can be used as a local aspect ratio, for example, an aspect ratio of 1 or more, in the vicinity of the surface electrode portion 1 2 a which is crying from -13 to 200848746. The diameter R of the second surface electrode portion 12a2 is preferably 1 to 3 times, more preferably 1 to 2 times the diameter r of the short-circuit portion 12c. Further, the diameter R of the second surface electrode portion 12a2 is preferably 30 to 75%, more preferably 40 to 60%, of the pitch p of the electrode structure 12. The outer diameter L of the back surface portion 1 2b is larger than the diameter of the short-circuit portion 12c and smaller than the pitch p of the electrode structure 12, but it is preferable to be as large as possible. The electrically conductive sheet can also be reliably and stably connected. The diameter r of the short-circuit portion 12c is preferably from 15 to 75%, more preferably from 20 to 65%, of the pitch p of the electrode structure 12. Further, when the short-circuit portion 12c is a through hole in which the insulating sheet 41 is formed by wet etching, the vertical section has a push-down shape. However, in this case, the diameter r of the short-circuit portion 12c is a thickness direction. Central location. In view of the specific dimensions of the electrode structure 12, the protrusion height of the second surface electrode portion 12a2 is preferably 15 to 50 μm, and more preferably from the viewpoint of achieving stable electrical connection to the electrode to be inspected. The diameter R of the second surface electrode portion 1 2a2 is set in consideration of the above conditions or the diameter of the electrode to be inspected, and is, for example, 30 to 200 μm, preferably 35 to 150 μm. The diameter r of the short-circuit portion 1 2 c is preferably from 10 to 120 μm, more preferably from 15 to ΙΟΟμηη, in order to obtain a sufficiently high strength. -14- 200848746 The thickness of the back electrode portion 1 2b is such that good repeatability is obtained in order to sufficiently increase the strength. It is preferable that the coating film formed of the highly conductive metal is formed on the second surface electrode portion 12a2 or the back surface electrode portion 12b of the electrode structure 12, preferably from 1 to 750 μm, more preferably from 1 to 7 5 μm. can. As such a coating film, a chemically stable highly conductive metal is preferred, and specific examples of such a highly conductive metal include gold, silver, palladium, rhodium, and the like. Further, when the inspection electrode on which the oxide film is formed on the surface is electrically inspected, the electrode structure 1 2 contacting the sheet-like probe 1 与 and the electrode to be inspected are provided, and the second surface electrode portion 12a2 of the electrode structure 15 is used. The oxide film on the surface of the electrode to be inspected is destroyed, and the electrode structure 15 and the electrode to be inspected must be electrically connected. For this reason, the second surface electrode portion 12a2 of the electrode structure 12 has a hardness which is such that the oxide film can be easily broken. In order to obtain such a second surface electrode portion 1 2 a2, the metal forming the second surface electrode portion 12a2 may contain a powder material having a high hardness. Examples of such a powder material include diamond powder, tantalum nitride, boron nitride, tantalum carbide, glass, and carbon nanotubes. By containing an appropriate amount of such non-conductive powder material, the conductivity of the electrode structure 12 is not impaired, and the surface electrode portion 12a of the electrode structure 1 2 can destroy the oxidation formed on the surface of the electrode to be inspected. membrane. Further, in order to easily break the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 12a of the electrode structure 12 may be sharply formed, and the fine unevenness may be formed on the surface of the surface electrode portion 12a. -15- 200848746 As shown in Fig. 4, the frame plate 15 is a metal frame plate 16' having a through hole formed at a position where the contact film 20 is disposed, and is deposited on the entire surface of the metal frame plate 16 by electrolytic deposition. A layer of polyimide resin material layer 17 having a uniform thickness. Specific examples of the metal constituting the metal frame plate 16 include iron, copper, nickel, chromium, cobalt, magnesium, manganese, molybdenum, indium, titanium, tungsten, or alloys or alloy steels thereof. As the metal frame plate 16, the coefficient of linear thermal expansion is preferably 3x1 0_5/K or less, more preferably lxl (T7 to 1χ10_5/Κ, and most preferably 1χ10_6 to 8χ1 0_6/Κ. As a metal frame plate) Specific examples of the material of the 16 are exemplified by constant-van steel alloys such as constant-van steel, elastic-invariant steel-type alloys such as elastic invariant steels, super-constant-van steel, Kovar, and 42 alloys. Alloy or alloy steel, etc. The thickness of the metal frame plate 16 is preferably from 3 to 150 μm, more preferably from 5 to 100 μm. If the thickness is too small, the frame plate as the support contact film 2 无法 cannot The thickness of the polyimine resin material layer 17 is preferably from 1 to 200 μm, more preferably from 5 to 70 μm, still more preferably from 1 to 50 μm, as shown in Figs. 1 and 2. In the periphery of the sheet-like probe 1 〇, a ring-shaped ring member 2 having a rigid plate shape can be provided. As a specific example of the material of the ring member 21, there are exemplified by Hengfan copper and super constant steel. Low-expansion metal of elastic invariant steel type alloy such as elastic invariant steel, Kovar, nickel-cobalt alloy, 42 alloy, etc. Ceramic material such as alumina, tantalum carbide, tantalum nitride-16-200848746, etc. By means of such a ring member 2 1, the sheet-like probe 1 is supported by its rigidity, and in the probe card described below, For example, the hole formed in the ring member 21 is inserted through the guide pin provided on the probe card, or is fitted to the ring member 2 1 and the peripheral step portion of the peripheral portion of the probe card. The electrode structure i 2 disposed on the contact film 20 of the sheet-like probe 1 容易 can be easily aligned with the inspected electrode of the test object or the conductive portion of the opposite-conductivity connector, and is used in When the inspection is repeated, the adhesion to the test object can be surely prevented from being displaced from the predetermined position of the electrode structure 12. Further, by the ring member 21, the heat in the surface direction of the insulating sheet 41 is controlled. The swell can be attached to prevent the deviation of the electrode structure 1 2 from the electrode to be inspected due to temperature change in the heat target test. The flaky probe 1 本 according to the present embodiment is formed by corresponding Checking the electrode area of the electrode to be inspected of the circuit device of the object to form a plurality of through The frame plate 15 of the hole 15 5 supports the contact film 20 of each of the through holes 15A disposed therein, so that the area of the contact film 20 disposed in the through hole 15A can be reduced. The small contact film 20 is such that the absolute amount of thermal expansion in the surface direction of the insulating sheet 41 is small, so that the thermal expansion of the insulating sheet 41 can be reliably regulated by the frame plate 15. For example, a large-area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch of the electrode to be inspected reliably prevents the temperature of the electrode structure 1 2 from being in contact with the electrode to be inspected at the time of the thermal target test. Therefore, it is stable to maintain a good electrical connection state. -17- 200848746 2 - Method for producing a sheet-like probe The following describes a method for producing a sheet-like probe according to an embodiment of the present invention. First, as shown in Fig. 5, a first sheet 30 having an insulating sheet 31 and a metal layer 3 2 laminated on the insulating sheet 31 is prepared. Further, other layers such as a protective film may be laminated on the first sheet 30 as needed, but the illustration is omitted here. As the first sheet 30, for example, a commercially available laminated polyimide film in which a metal layer formed of copper is laminated on a polyimide film can be used. Hereinafter, as shown in Fig. 6, the through hole 3?n is formed in the insulating sheet 3i at a position corresponding to the pattern of the electrode structure body 1 to be formed. The through hole 3 1 Η ' is formed, for example, in the following manner. First, on the surface of the insulating sheet 31, a plurality of pattern holes are formed in an etching resist film formed at a position corresponding to the pattern of the electrode structure 1 2 to be formed. Here, as the material for forming the photoresist film, various materials used as the photoresist for uranium engraving can also be used. Thereafter, the insulating sheet 31 is subjected to uranium engraving treatment at a portion exposed through the pattern hole of the photoresist film to remove the portion, whereby the through hole 3 1 Η is formed on the insulating sheet 31. Here, when a polyimide film is used as the insulating sheet 31, if the through hole 3 1 Η is formed by wet etching, the shape of the through hole 3 1 Η is selected along with the metal by selecting an etching treatment condition. The direction of the layer 3 2 becomes a push-out shape of a small diameter. As the etching liquid used for such a wet etching treatment, an amine-based uranium engraving solution, a hydrazine aqueous solution, a hydroxide -18-200848746 potassium aqueous solution, or the like can be used. Further, the through hole 31H does not necessarily have to be formed in a push-out shape, and may be formed in a columnar shape having no push-out angle by, for example, laser processing. The diameter of the exposed surface on the side opposite to the metal layer 3 2 of the through hole 3 1 , is, for example, 50 to 50 μm, and the insulating film 31 is 50 to μμηη, and the through film 3 1 is formed, and the photoresist film is removed. . After the through hole 3 1 形成 is formed in the insulating sheet 31 , the metal layer 3 2 is subjected to electrolytic plating as an electrode, and the metal is filled in the through hole 3 1 绝缘 of the insulating sheet 31 as shown in FIG. As shown, the surface electrode portion 12a formed by the rigid conductor of the electrode structure 1 to be formed is obtained. Further, as shown in Fig. 8, the first conductive layer 33 is formed on the exposed surface on the opposite side to the metal layer 32 of the surface electrode portion 12a. As the constituent metal material of the surface electrode portion 12a formed by the rigid conductor, for example, nickel, copper or the like can be used. As the constituent metal material of the first conductive layer 33, for example, a solder alloy containing a low-melting-point metal component such as antimony, tin, zinc, or indium, electroplating gold, silver, or the like can be used, and conductivity of the conductive metal particles is continued. Agent. The structure in which the surface electrode portion 12a and the first conductive layer 33 are shown in Fig. 8 is laminated, for example, the first sheet 30 is continuously immersed in the surface electrode portion 1 2a and the first conductive layer 3 3 is plated. Bath is available. When a conductive adhesive is used, a conductive adhesive containing a conductive adhesive can be printed on the surface of the surface electrode portion 1 2a by screen printing. -19- 200848746 On the other hand, unlike the above first sheet 30, the second sheet 40 shown in Fig. 9 is prepared. As the second sheet 40, similarly to the first sheet 30, an insulating sheet 4 such as a commercially available laminated polyimide sheet having a metal layer formed of copper, which is laminated on a polyimide film, can be used. And a metal layer 42 laminated on the insulating sheet 41. Further, other layers such as a protective film may be laminated on the second sheet 40 as needed, but the illustration is omitted here. As shown in Fig. 9, in the second sheet 40, in the position corresponding to the pattern of the electrode structure 1 2 to be formed, the through hole 4 1 Η is formed after the insulating sheet 41, and the metal layer 4 is formed. 2 Electrolytic plating treatment is applied as an electrode, and the metal is filled in the through hole 4 1 绝缘 of the insulating sheet 41 to obtain the short-circuit portion 1 2 c of the electrode structure 1 2 to be formed. Further, as shown in Fig. 10, the second conductive layer 43 is formed on the exposed surface on the opposite side to the metal layer 42 of the short-circuit portion 12c. As the constituent metal material of the second conductive layer 43, for example, a solder alloy containing a low-melting-point metal component such as bismuth, tin, zinc or indium, electroplated gold, silver, or the like, and a conductive adhesive containing conductive metal particles can be used. . The structure in which the short-circuit portion 12c and the second conductive layer 43 shown in FIG. 10 are laminated is obtained by, for example, continuously immersing the second sheet 40 in the plating bath for the short-circuit portion 1 2c and the second conductive layer 43. When a conductive adhesive is used, a surface of the short-circuit portion 12c is applied by screen printing to obtain a conductive adhesive. In the above, the through hole 41 Η is formed, for example, in the same manner as the first sheet 30 , and the etching light -20-200848746 formed on the surface of the insulating sheet 41 is formed in accordance with the electrode structure to be formed. After the position of the pattern of the body 12, for the insulating sheet 4, the portion which can be removed by applying a uranium engraving treatment to the portion exposed through the pattern hole of the photoresist film can be formed. Here, when the insulating sheet 4 1 is formed of a polyimide resin, the through hole 4 1 Η is formed by wet uranium engraving, and the shape of the through hole 4 1 Η can be made into a cylindrical shape or a push-like shape. However, by selecting the etching treatment conditions, it is possible to make an appropriate shape in response to the short-circuit portion 12c to be obtained. As the constituent metal material of the short-circuit portion 1 2 c, for example, nickel, copper or the like can be used. The structure in which the short-circuit portion 12c and the second conductive layer 43 shown in FIG. 10 are laminated is obtained by, for example, continuously immersing the second sheet 40 in the plating bath for the short-circuit portion 12c and the second conductive layer 43. As described above, after the first sheet 30 of FIG. 8 and the second sheet 40 of FIG. 10 are obtained, as shown in FIG. 11, the first conductive layer 33 and the second conductive layer 43 are superposed. In general, the first sheet 3〇 and the second sheet 40 are overlapped, and at each of the positions where the electrode structure 12 is to be formed, the first conductive layer 33 and the second conductive layer 43 are bonded to each other to form a conductive bonding layer 1 2d. The bonding of the first conductive layer 33 and the second conductive layer 43 is a method of bonding the first conductive layer and the second conductive layer by, for example, generating heat by conduction of the metal layers 3 2 and 42 as electrodes. The method of heating the laminate of the first sheet 30 and the second sheet 40 in a heating chamber such as a furnace, and the method of pressure-bonding the first sheet 30 and the second sheet 40 can be performed. -21 - 200848746 Thereafter, as shown in Fig. 12, the surface electrode portion 1 2 a is left, and the first sheet 30 is mechanically peeled off from the second sheet 40. Then, as shown in Fig. 3, an electroless plating treatment is applied to the surface on which the surface electrode portion 12a of the insulating sheet 41 is protruded. Thereby, about the hemispherical (spindle) shape of the second surface electrode 12a2 is formed around the surface electrode portion 12a. The thickness of the second surface electrode portion 12a2 is, for example, 1 to ΙΟμπι 〇 as the constituent metal material of the second surface electrode portion 12a2, and examples thereof include ruthenium, palladium, gold, nickel-gold alloy plating, and the like. In the following, as shown in Fig. 14, a plating process such as gold plating is applied around the second surface electrode portion 12a2, and a highly conductive metal is formed on the surface of the back electrode portion 12b. The film 13 is covered. Then, as shown in Fig. 15, a photoresist layer 45 is formed on the surface of the metal layer 42 of the second sheet 40, and as shown in Fig. 6, the back electrode portion 1 2b which becomes the electrode structure 1 2 is left. The photoresist layer 45 is removed in part. Thereafter, the metal layer 42 is etched by using the photoresist layer 45 as a mask, and the back electrode portion 12b is formed as shown in Fig. 17. Then, as shown in Fig. 18, the photoresist layer 45 on the back surface electrode portion 1 2 b is removed, as shown in Fig. 9, on the surface on the side of the back surface electrode portion 12b of the insulating sheet 41, followed by the frame Board 15. The frame plate 15 is, for example, at each position of each integrated circuit on the wafer corresponding to the object to be inspected, and a metal frame plate 16 having a plurality of through holes formed by punching, laser processing, etching, or the like is prepared. On the other hand, at least one surface of the metal frame plate 16 is formed by electrolytic deposition to form a layer 11 of a polyimine resin material -22-200848746. The polyimine resin material constituting the polyimine resin material layer 17 may be a mixture of a polyimide resin, a mixture with another resin, or a reaction product with another resin. Here, the term "polyimine resin" means a precursor (polyimine imino acid and a part of quinone imide) thereof in addition to the polyimide resin itself. As the polyimide resin, an electrodepositable electrode can be used. Specifically, those introduced into the ionic group are not particularly limited, and various types can be used. Examples of the method for producing the electrolytic solution include (I) dispersing a resin solution obtained by dissolving a polyimine resin or a polymer different from the organic solvent in an organic solvent, and then dispersing the resin solution in an aqueous medium. A method of removing an organic solvent, a method of dispersing the resin particles formed of the polyimine resin particles or the polyimide resin and other polymers, and dispersing the particles in an aqueous medium. These methods can be carried out under heating as needed. As a method of electrolytic deposition of a polyimide resin material, there are a method of controlling a current, a method of controlling a voltage, and the like, respectively, a method of maintaining a certain enthalpy during the period of performing electrolytic deposition, which is changed in accordance with the progress of electrolytic deposition. Method, etc. Although the electrolytic deposition apparatus is simple, it is easy to control the thickness of the obtained layer of the polyimide resin material layer 17, and it is preferable to use a constant voltage method. Specifically, the electrolytic deposition conditions are appropriately set in consideration of the kind of the polyimide resin, the thickness of the polyimide layer of the polyimide material layer to be formed, and the like, for example, the treatment voltage is 2 to 100 V, and the treatment period is 0. 5 to 30 minutes. Further, by using a pulse method in which a voltage or a current is applied in a pulse form, -23-200848746 can prevent bubbles from occurring during electrolytic deposition, and can form a high-quality electrodeposited film. As the electrolytic deposition liquid, in the case of using a polyimine resin having a crosslinkable functional group, after the polyimine resin material is electrolytically deposited, it is washed in order to remove excess electrolytic deposition liquid, to appropriately The temperature is dried. As the conditions of the drying treatment, the treatment temperature is, for example, 60 to 12 ° C, and the treatment time is, for example, 5 to 30 minutes. The frame plate 15 having the polyimide layer of the polyimide material layer 17 is formed by the electrolytic deposition process described above, which is the polyimide sheet of the 19th sheet, and the polyimide of the frame plate 15 is contacted. The surface of the resin material layer 17 and the insulating sheet 41 is overlapped so that the electrode structure 12 is disposed in the through hole 15H of the frame plate 15, and in this state, the polyimine 17 is pressed by one side to apply pressure. The two are thermocompressed and are followed by each other. Thereby, as shown in Fig. 9, a laminated body of the frame plate 15 and the insulating sheet 4 1 can be obtained. After the frame plate 15 and the insulating sheet 4 1 are integrated as described above, if necessary, as shown in FIGS. 1 and 2, the ring member 21 is adhered to the peripheral edge portion of the frame plate 15 to obtain a sheet shape. Probe 10. When the surface electrode portion is damaged by the surface electrode portion having the surface electrode portion formed by the rigid conductor and the short portion formed by the rigid conductor and the conductive member is bonded, the surface electrode portion is damaged. The conductive bonding layer can be separated from the surface electrode portion and the short-circuit portion. For example, by peeling off between the surface electrode portion and the first conductive layer, or peeling between the first conductive layer and the second conductive layer, or peeling between the second conductive layer and the short-circuited portion, The surface electrode portion can be detached from the electrode structure. -24- 200848746 When the conductive bonding layer has a solder layer, the solder layer is melted by heating only the damaged electrode structure portion, and the surface electrode portion can be easily detached. Further, when the conductive bonding layer is formed by bonding the solder layer and the mineral metal, the electrode structure portion 'only heat-damaged' is easily peeled off by the interface of the solder layer and the gold plating layer by the molten solder layer 'and on the detached surface After the electrode portion, the surface electrode portion having the solder layer is re-laminated and energized to generate heat, and the bonding can be performed. Further, it is preferable to easily replace and repair the surface electrode portion of the electrode structure. Further, when the conductive bonding layer is composed of a conductive bonding agent, the surface electrode portion can be mechanically peeled off from the short-circuit portion, and the surface electrode portion in which the conductive adhesive layer is formed by re-lamination can be easily replaced. It is preferable to repair the surface electrode portion of the electrode structure. Further, according to the method for producing a sheet-like probe of the present invention, the first sheet forming the surface electrode portion and the second sheet forming the short-circuit portion and the like can be separately produced, and the surface electrode portion, the short-circuit portion, and the like of each of the sheets can be inspected. In the case of manufacturing, if a defective portion such as a defect or a different mold is found, it is possible to avoid the use of a defective sheet, and it is possible to manufacture a sheet-like probe by selecting only a sheet having a good product, thereby reducing the obtained sheet-like probe. The electrode structure has a bad probability. Therefore, the yield of the sheet-like probe is high. (3) FIG. 20 is a cross-sectional view showing a schematic configuration of an inspection apparatus using a circuit device of a sheet-like probe 10 manufactured by the method of the present invention, -25-200848746 21 is a cross-sectional view showing a schematic configuration of a probe card of the inspection device, and FIG. 22 is a cross-sectional view showing an enlarged portion of the probe card. In Fig. 21, (a) shows the state of the circuit board for decomposition inspection, the state of the anisotropic conductive connector, and the sheet-like probe, and (b) shows the state in which the positioning is fixed. The inspection apparatus of the circuit device is used for performing electrical inspection of an integrated circuit in a state of a wafer in a plurality of integrated circuits formed on a wafer. As shown in Fig. 2G, the inspection device of the circuit device includes a probe card 50 that electrically connects each of the to-be-tested electrodes 9 1 of the wafer 90 to be inspected to the tester. As shown in the enlarged view of FIG. 2, the probe card 5 includes the inspection circuit board 60, the anisotropic conductive connector 70, and the sheet-like probe 10 in the inspection circuit board 60. On the surface, a plurality of inspection electrodes 61 are formed in accordance with a pattern corresponding to the pattern of the inspected electrode 91 formed on all the integrated circuits of the wafer 90. The anisotropic conductive connector 70 is provided with a frame plate 711 having a plurality of openings 72 formed in the electrode region disposed on the electrode to be inspected 9 1 formed on all the integrated circuits of the wafer 90, and disposed on the electrode plate The frame plate 71 is a plurality of anisotropic conductive sheets 73 that are respectively fixed to the edge of the opening 72 of the frame plate 71 by plugging an opening 72. Each of the anisotropic conductive sheets 73 is formed by a pattern formed by an elastic polymer material in accordance with a pattern corresponding to a pattern of the inspection electrode 91 of -26-200848746 formed in an electrode region of the wafer 90. Each of the plurality of conductive portions 74 extending in the thickness direction and the insulating portion 75 of the conductive portions 74 are electrically insulated from each other. As shown in FIG. 2, the anisotropic conductive connector 70 is disposed on the surface of the inspection circuit board 60, and all the surfaces corresponding to the wafer 90 are disposed on the surface of the anisotropic conductive connector 70. A sheet-like probe 1 复 of the plurality of electrode structures 12 is disposed in a pattern of a pattern of the inspection electrode 91 of the integrated circuit. The anisotropic conductive connector 70 is inserted into a through hole (not shown) formed in the frame plate 71 by the guide pin 52, and the inspection electrode 61 and the conductive portion 74 of the inspection circuit board 6 are fixed. Consistent. The sheet-like probe 1 is a stage in which the ring member 35 attached to the outer edge portion and the pressure plate 80 on the surface opposite to the inspection electrode 61 of the inspection circuit board 60 are fitted. The difference portion is such that the electrode structure i 2 and the conductive portion 7 4 of the anisotropic conductive connector 70 can be positioned to coincide with each other. Further, the method of positioning the anisotropic conductive connector 70 and the sheet-like probe 1 ’ is not limited to the above-described method, and an appropriate method can be applied depending on the situation. As the substrate material constituting the circuit board for inspection 60, various conventionally known substrates can be used. Examples of the specific examples include glass fiber reinforced epoxy resin, glass fiber reinforced phenol resin, and glass fiber reinforced polyimide resin. A composite resin material such as a composite resin such as a glass fiber reinforced bismaleimide triazine resin, or a ceramic material such as glass, ceria or alumina. -27- 200848746
又，構成用以進行WLBI試驗的檢查裝置時’使用線 熱脹係數爲3χ10·5/Κ以下者，更理想爲lxl〇_7至lxl〇_5/K ，最佳爲lxl(T6至6χ1(Γ6/Κ。作爲此種基板材料的具體例 ，列舉有派易雷克斯（譯音，登錄商標）玻璃、氧化鋁、 氧化鈹、碳化矽、氮化鋁、氮化硼等。 作爲構成向異性導電性連接器70的框板7 1的材料， 不容易地變形框板7 1，若爲具有安全地被維持該形狀的程 度的剛性者，並未特別地加以限定，例如可使用金屬材料 、陶瓷材料、樹脂材料等的各種材料，在例如藉由金屬材 料構成框板7 1時，絕緣性被膜形成於框板7 1的表面也可 以。 作爲構成框板7 1的金屬材料的具體例，例舉有鐵、 銅、鎳、鈦、鋁等的金屬或組合兩種以上此些的合金或合 金鋼等。又，作爲構成框板71的樹脂材料的具體例，列 舉有液晶聚合物、聚醯亞胺樹脂等。 又，在檢查裝置爲用以進行 WLBI ( Wafer Lebel Burn-in)試驗所用者時，作爲構成框板71的材料，使用 線熱脹係數爲3xl0_5/K以下者較佳，更佳者爲1><1〇_7至i χ10_5/Κ，最佳爲 1χ10_6 至 8χ1〇·6/Κ。 作爲此種材料的具體例，列舉有恆範鋼等的恆範鋼型 合金’彈性不變鋼等的彈性不變鋼型合金、超級極範鋼、 科瓦鐵鎳鈷合金、4 2合金等的磁性金屬的合金或合金鋼等 〇 框板7；!的厚度是若該形狀被維持，而且可支撐向異 -28 - 200848746 性導電性薄片7 3，則並未特別加以限定者，具體上的厚度 是藉由材質而不相同，例如爲25至600μιη較佳，更佳爲 40 至 400μιη 〇 如第22圖所示地，在向異性導電性薄片73的各該導 電部74，表示磁性的導電性粒子Ρ以朝厚度方向排列般 地配向的狀態下緊密地含有。對於此，絕緣部75是完全 或幾乎未含有導電性粒子Ρ者。 又，在圖示例中，在向異性導電性薄片73的兩面， 突出部76形成有導電部74。 向異性導電性薄片73的全厚（在圖示的例子爲導電 部 74的厚度）是 50至 2000 μιη較佳、更佳爲 70至 ΙΟΟΟμιη，更佳爲 80 至 500μπι。 若該厚度爲5 0 μιη以上，則在向異性導電性薄片7 3可 得到充分的強度。另一方面，若該厚度爲2 0 0 0 μιη以下， 則確實地可得到具有所需要的導電特性的導電部74。 突出部76的突出高度，是該合計爲突出部76的厚度 10%以上較佳，更佳爲15%以上。藉由形成具有此種突出 高度的突出部76，以小的加壓力就可充分地壓縮導電部 74之故，因而可確實地得到良好的導電性。 又，突出部76的突出高度，是突出部76的最短寬度 或直徑的100%以下較佳，更佳爲70%以下。藉由形成具 有此種突出高度的突出部76，在突出部76被加壓時不會 有壓曲之故，因而可確實地得到所期望的導電性。 作爲形成向異性導電性薄片73的彈性高分子物質， -29- 200848746 具有交聯構造的耐熱性高分子物質較佳。作爲可使用於爲 了得到此種交聯高分子物質的硬化性高分子物形成材料， 可使用各種者，惟液狀聚氧矽橡膠較佳。 爲了得到導電性粒子P的磁性芯粒子，是該數平均粒 子徑爲3至40 μπι者較佳。在此，磁性芯粒子的數平均粒 子徑，是指藉由雷射衍射散射法進行測定者。 若上述數平均粒子徑爲3 μιη以上，則加壓變形容易， 而電阻値低且高連接信賴性的導電部74。另一方面，若上 述數平均粒子徑爲40 μπι以下，則可容易地形成微細的導 電部74，又，所得到的導電部74，是容易成爲具有穩定 的導電性者。 作爲構成磁性芯粒子的材料，可使用鐵、鎳、鈷，藉 由銅、樹脂塗層此些的金屬者等，惟使用該飽和磁化爲 0.1 Wb/m2以上者較佳，更佳爲 0.3 Wb/m2以上，更佳爲 0.5 Wb/m2以上者。 在磁性芯粒子的表面，可被覆高導電性金屬。作爲此 種高導電性金屬，可使用金、銀、铑、白金、鉻等，在此 些中，以化學上穩定且具有高導電率，而使用金較佳。 導電性粒子P是高導電性金屬對於芯粒子的比率[( 高導電性金屬的質量/芯粒子的質量）X 1 0 0 ]作爲1 5質量％ 以上，較佳爲作爲2 5至3 5質量％。高導電性金屬的比率 爲不足1 5質量％時，在高溫環境下重複使用所得到的向異 性導電性連接器70時，會顯著地降低導電性粒子p的導 電性之結果’則無法維持所需要的導電性。 -30- 200848746 又，導電性粒子P的數平均粒子徑，是3至40 μπι較 佳，更佳爲6至25 μιη。藉由使用此種導電性粒子Ρ，所得 到的向異性導電性薄片73是成爲加壓變形容易者，又， 在導電部74中導電性粒子Ρ間可得到充分的電性接觸。 又，導電性粒子Ρ的形狀是並未特別加以限定者，惟 可容易地分散於高分子物質形成材料中之處，球狀者、長 形狀者或是凝集此些的2次粒子所致的塊狀者較佳。 導電部74的導電性粒子Ρ的含有比率，是在體積分 率爲10至6 0%，較佳爲15至50%。在該比率爲不足10% 時，則有無法得到電阻値充分小的導電部74的情形◦另 一方面，該比率超過60%時，所得到的導電部74是容易 成爲脆弱者，而作爲導電部74有無法得所需要的彈性的 情形。 如以上的向異性導電性連接器70，是藉由被記載於例 如日本特開2002-3 24600號公報就可加以製造。 如第20圖所示地，在與探針卡50的檢查用電路基板 60的檢查電極6 1相反側的一面，設有朝下方加壓探針卡 5 〇的加壓板8 0，在探針卡5 0的下方，設有載置著晶圓9 0 的晶圓載置台8 1，而在加壓板8 0及晶圓載置台8 1分別連 接有加熱器82。 在第20圖的檢查裝置，檢查對象的晶圓90載置於晶 圓載置台81上，之後藉由加壓板80把探針卡50朝下方 加壓，藉由此，把該薄片狀探針1 0的電極構造體〗2的各 該第2表面電極部12a2，接觸於晶圓90的各該被檢查電 -31 - 90 200848746 極91，又，藉由各該第2表面電極部12a2而加壓晶圓 的各該被檢查電極91。 在該狀態下，向異性導電性連接器70的向異性導 性薄片73的各該導電部74，是藉由檢查用電路基板60 檢查電極6 1與薄片狀探針1 0的電極構造體1 2的背面 極部12b被夾壓而被夾壓朝厚度方向朝壓縮。 爲此，在導電部74朝該厚度方向形成有導電路， 果，達成晶圓90的被檢查電極91與檢查用電路基板 的檢查電極6 1的電性連接。 之後，藉由加熱器82，經由晶圓載置台8 1及加壓 8〇，把晶圓90加熱成所定溫度，該狀態下，針對於晶 的複數積體電路，分別實行所需要的電性檢查。 依照以上所說明的檢查裝置，具備具薄片狀探針 的探針卡5 0之故，因而對於以小節距形成有被檢查電 9 1的晶圓90也可確實地達成穩定的電性連接狀態，而 探針卡50具有高耐久性之故，因而在進行多數晶圓90 檢查時，也可長期間地實行高可靠性的檢查。 電路裝置的檢查裝置是並不被限定於上述例子，如 下所述地，也可施加各種變更。 探針卡50是對於形成於晶圓90的所有積體電路的 檢查電極9 1 一倂地達成電性地連接也可以，惟電性地 接從形成於晶圓90的所有積體電路中所選擇的複數積 電路的被檢查電極9 1者也可以。 所選擇的積體電路的數量’是考慮晶圓90的尺寸 電 的 電 結 60 板 圓 10 極 且 的 以 被 連 體 -32- 200848746 形成於晶圓90的積體電路的數量，各積體電路 電極9 1的數量等而加以適當選擇，例如有1 6個 64 個、128 個。 在具有此種探針卡5 0的檢查裝置中，將於 晶圓90的所有積體電路中所選擇的積體電路的 極91，電性地連接探針孔5 0而進行檢查，之後 從其他積體電路中所選擇的複數積體電路的被檢 ，電性地連接探針卡5 0而重複進行檢查的工程 可進行形成於晶圓90的所有積體電路。 又，依照此種檢查裝置，在針對於以高積體 徑爲8英吋或1 2英吋的晶圓90的積體電路進行 時，與針對於所有積體電路一倂進行檢查的方法 可減少所使用的檢查用電路基板6 0的檢查電極 數，藉此，可謀求檢查裝置的製造成本。 檢查裝置的檢查對象的電路裝置，是並不被 成有多數積體電路的晶圓90者，而作爲形成於 薄片、或BGA、CSP等的封裝LSI、MCM等的半 電路裝置等的電路的檢查用可構成檢查裝置。 以上，針對於本發明的實施形態加以說明， 是並不被限定於此些實施形態者，而在不超越其 圍內可做各種變形、變更。 例如，在上述的實施形態中，作爲框板1 5 聚醯亞胺樹脂材料層1 7者，惟藉由適當變更製 ，可適用金屬板所形成者，網眼狀者等各種者。 的被檢查 、32 個、 從形成於 被檢查電 ，藉由在 查電極9 1 ，藉此， 形成於直 電性檢查 相比較， 數或配線 限定於形 半導體晶 導體積體 惟本發明 要旨的範 使用形成 造工程等 -33- 200848746 又，有無環構件2 1的設置或設置形態等，視需要作 成適當者也可以。 【圖式簡單說明】 第1圖是表示本發明的薄片狀探針的一實施形態的俯 視圖。 第2圖是表示第1圖的X-X線斷面圖。 第3圖是擴大表示第1圖的薄片狀探針的接點膜的俯 視圖。 第4圖是表示第3圖的X-X線斷面圖。 第5圖是表示說明本發明的薄片狀探針的製造工程的 斷面圖。 第6圖是表示說明本發明的薄片狀探針的製造工程的 斷面圖。 第7圖是表示說明本發明的薄片狀探針的製造工程的 斷面圖。 第8圖是表示說明本發明的薄片狀探針的製造工程的 斷面圖。 第9圖是表示說明本發明的薄片狀探針的製造工程的 斷面圖。 第1 0圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 1圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 -34- 200848746 第1 2圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 3圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 4圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 5圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 5圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 7圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 8圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第1 9圖是表示說明本發明的薄片狀探針的製造工程 的斷面圖。 第20圖是表示使用藉由本發明的方法所製造的薄片 狀探針的電路裝置的檢查裝置的槪略構成的斷面圖。 第21(a)圖及第21(b)圖是表示第20圖的檢查裝 置的探針卡的槪略構成的斷面圖。 第22圖是擴大表示第21圖的探針卡。 【主要元件符號說明】 1 0 :薄片狀探針 1 2 :電極構造體 -35- 200848746 1 2 a :表面電極部 12a2 :第2表面電極部 12b :背面電極部 12c :短路部 1 2d :導電性接合層 1 3 :被覆膜 1 5 :框板 1 5 Η :貫通孔 1 6 :金屬框板 1 7 :聚醯亞胺樹脂材料層 2 0 :接點膜 21 :環構件 30 :第1薄片 3 1 :絕緣薄片 3 1 Η :貫通孔 32 :金屬薄片 33 :第1導電層 40 :第2薄片 4 1 :絕緣薄片 4 1 Η :貫通孔 42 :金屬薄片 43 :第2導電層 4 5 :光阻層 5 〇 :探針卡 -36- 200848746 5 2 :導銷 6 0 :檢查用電路基板 6 1 :檢查電極 70 :向異性導電性連接器 71 :框板 72 :開口 73 :向異性導電性薄片 74 :導電部 7 5 :絕緣部 7 6 :突出部 8 0 :加壓板 8 1 :晶圓載置台 82 :加熱器 9 〇 :晶圓 9 1 :被檢查電極 P :電極構造體的節距 h:表面電極部的突出高度 R :表面電極部的直徑 L :背面電極部的外徑 r :短路部的直徑 P :導電性粒子 -37-Further, when the inspection apparatus for performing the WLBI test is used, the linear thermal expansion coefficient is 3 χ 10·5 / Κ or less, and more preferably lxl 〇 _7 to lxl 〇 5 / K, and the optimum is lxl (T6 to 6 χ 1). (Γ6/Κ. Specific examples of such a substrate material include glass, alumina, yttria, tantalum carbide, aluminum nitride, boron nitride, etc. The material of the frame plate 7 1 of the anisotropic conductive connector 70 is not easily deformed, and the rigidity of the frame plate 7 1 is not particularly limited as long as it is safely maintained. For example, a metal material can be used. When the frame plate 71 is made of a metal material, for example, a ceramic material, a resin material, or the like may be formed on the surface of the frame plate 71. Specific examples of the metal material constituting the frame plate 7 1 may be used. A metal such as iron, copper, nickel, titanium, or aluminum, or a combination of two or more of these alloys or alloy steels, etc., and a liquid crystal polymer are exemplified as specific examples of the resin material constituting the frame plate 71. Polyimine resin, etc. When it is used for the WLBI (wafer Lebel Burn-in) test, it is preferable to use a linear thermal expansion coefficient of 3x10_5/K or less as a material constituting the frame plate 71, and more preferably 1><1〇_7 to i χ10_5/Κ, preferably 1χ10_6 to 8χ1〇·6/Κ. As a specific example of such a material, an elastic constant steel type alloy such as a constant-van steel type alloy such as constant-fan steel, elastic constant steel, or the like is listed. a super-polar steel, a Kovar, a 4 2 alloy, a magnetic metal alloy or an alloy steel such as a slab plate 7; the thickness of the slab is maintained if the shape is maintained and can support the different -28 - 200848746 The conductive sheet 7 3 is not particularly limited, and the specific thickness is not the same by the material, for example, preferably 25 to 600 μm, more preferably 40 to 400 μm, as shown in Fig. 22, Each of the conductive portions 74 of the anisotropic conductive sheet 73 indicates that the magnetic conductive particles 紧密 are closely contained in a state in which they are aligned in the thickness direction. In this case, the insulating portion 75 has completely or almost no conductive particles. In addition, in the example of the figure, it is conductive to the opposite sex. The conductive portion 74 is formed on both surfaces of the sheet 73, and the protruding portion 76 is formed. The full thickness of the conductive conductive sheet 73 (the thickness of the conductive portion 74 in the illustrated example) is preferably 50 to 2000 μm, more preferably 70 to ΙΟΟΟμιη. More preferably, it is 80 to 500 μm. When the thickness is 50 μm or more, sufficient strength can be obtained in the anisotropic conductive sheet 731. On the other hand, if the thickness is 200 or less, it is surely The conductive portion 74 having the required conductive characteristics can be obtained. The protruding height of the protruding portion 76 is preferably 10% or more, more preferably 15% or more, of the thickness of the protruding portion 76. By forming the protruding portion 76 having such a protruding height, the conductive portion 74 can be sufficiently compressed with a small pressing force, so that good electrical conductivity can be surely obtained. Further, the protruding height of the protruding portion 76 is preferably 100% or less of the shortest width or diameter of the protruding portion 76, and more preferably 70% or less. By forming the protruding portion 76 having such a protruding height, when the protruding portion 76 is pressurized, there is no buckling, and thus the desired conductivity can be surely obtained. As the elastic polymer material forming the anisotropic conductive sheet 73, a heat-resistant polymer material having a crosslinked structure is preferable from -29 to 200848746. As the curable polymer forming material which can be used for obtaining such a crosslinked polymer material, various materials can be used, and liquid polyoxysulfide rubber is preferred. In order to obtain the magnetic core particles of the conductive particles P, it is preferred that the number average particle diameter is 3 to 40 μm. Here, the number average particle diameter of the magnetic core particles means a measurement by a laser diffraction scattering method. When the number average particle diameter is 3 μm or more, pressure deformation is easy, and the electric resistance portion 74 having low resistance and high connection reliability is connected. On the other hand, when the number average particle diameter is 40 μm or less, the fine conductive portion 74 can be easily formed, and the obtained conductive portion 74 is likely to have stable conductivity. As a material constituting the magnetic core particles, iron, nickel, cobalt, a metal such as copper or a resin may be used, and the saturation magnetization is preferably 0.1 Wb/m2 or more, more preferably 0.3 Wb. /m2 or more, more preferably 0.5 Wb/m2 or more. On the surface of the magnetic core particles, a highly conductive metal can be coated. As such a highly conductive metal, gold, silver, rhodium, platinum, chromium or the like can be used. Among them, it is chemically stable and has high conductivity, and gold is preferably used. The conductive particles P are ratios of the highly conductive metal to the core particles [(mass of highly conductive metal/mass of core particles) X 1 0 0 ] as 15 mass% or more, preferably 25 to 35 mass %. When the ratio of the highly conductive metal is less than 15% by mass, when the obtained isotropic conductive connector 70 is repeatedly used in a high-temperature environment, the conductivity of the conductive particles p is remarkably lowered. The required conductivity. Further, the number average particle diameter of the conductive particles P is preferably from 3 to 40 μm, more preferably from 6 to 25 μm. By using such conductive particles, the obtained anisotropic conductive sheet 73 is easily deformed by pressure, and in the conductive portion 74, sufficient electrical contact can be obtained between the conductive particles. Further, the shape of the conductive particles Ρ is not particularly limited, but can be easily dispersed in the polymer material forming material, and is formed by a spherical shape, a long shape, or a secondary particle in which these are aggregated. Blocks are preferred. The content ratio of the conductive particles Ρ of the conductive portion 74 is in the volume fraction of 10 to 60%, preferably 15 to 50%. When the ratio is less than 10%, the conductive portion 74 having a sufficiently small electric resistance 无法 cannot be obtained. On the other hand, when the ratio exceeds 60%, the obtained conductive portion 74 is easily weakened and serves as a conductive material. The portion 74 has a situation in which the required elasticity cannot be obtained. The above-described anisotropic conductive connector 70 can be manufactured by, for example, JP-A-2002-324600. As shown in Fig. 20, on the side opposite to the inspection electrode 6 1 of the inspection circuit board 60 of the probe card 50, a pressure plate 80 for pressurizing the probe card 5 朝 downward is provided. Below the needle card 50, a wafer mounting table 810 on which the wafer 90 is placed is provided, and a heater 82 is connected to each of the pressurizing plate 80 and the wafer mounting table 81. In the inspection apparatus of Fig. 20, the wafer 90 to be inspected is placed on the wafer stage 81, and then the probe card 50 is pressed downward by the pressure plate 80, whereby the sheet-like probe is pressed. Each of the second surface electrode portions 12a2 of the electrode structure body 20 of 10 is in contact with each of the inspected electric-31 - 90 200848746 poles 91 of the wafer 90, and by the second surface electrode portions 12a2. Each of the inspected electrodes 91 of the wafer is pressurized. In this state, each of the conductive portions 74 of the anisotropic conductive sheet 73 of the anisotropic conductive connector 70 is an electrode structure 1 for inspecting the electrode 6 1 and the sheet-like probe 10 by the inspection circuit substrate 60. The back surface pole portion 12b of 2 is pinched and pressed toward the thickness direction toward the compression. For this reason, a conductive circuit is formed in the conductive portion 74 in the thickness direction, and the electrical connection between the inspected electrode 91 of the wafer 90 and the inspection electrode 61 of the test circuit substrate is achieved. Thereafter, the wafer 82 is heated to a predetermined temperature by the heater 82 via the wafer mounting table 8 1 and the pressure 8 ,. In this state, the required electrical inspection is performed for each of the crystal integrated circuits. . According to the inspection apparatus described above, since the probe card 50 having the sheet-like probe is provided, it is possible to surely achieve a stable electrical connection state with respect to the wafer 90 in which the inspected electric power 9 is formed at a small pitch. Since the probe card 50 has high durability, it is possible to perform high-reliability inspection for a long period of time when performing inspection of a plurality of wafers 90. The inspection device of the circuit device is not limited to the above example, and various modifications can be applied as described below. The probe card 50 may be electrically connected to the inspection electrode 9 1 of all the integrated circuits formed on the wafer 90, but may be electrically connected to all the integrated circuits formed on the wafer 90. It is also possible to select the electrode 9 to be inspected of the complex product circuit. The number of integrated circuits selected is the number of integrated circuits formed on the wafer 90 in consideration of the size of the wafer 90 in consideration of the size of the electric junction 60 of the wafer 90, and the integrated circuits formed on the wafer 90 by the connected body-32-200848746. The number of the circuit electrodes 91 is appropriately selected, for example, 16 to 64 and 128. In the inspection apparatus having such a probe card 50, the pole 91 of the integrated circuit selected in all the integrated circuits of the wafer 90 is electrically connected to the probe hole 50 for inspection, and then The inspection of the plurality of integrated circuits selected in the other integrated circuits, and the process of repeating the inspection by electrically connecting the probe cards 50 can perform all the integrated circuits formed on the wafer 90. Further, according to such an inspection apparatus, when the integrated circuit of the wafer 90 having a high product diameter of 8 inches or 12 inches is used, the method for inspecting all the integrated circuits can be performed. The number of inspection electrodes of the inspection circuit board 60 to be used is reduced, whereby the manufacturing cost of the inspection apparatus can be achieved. The circuit device to be inspected by the inspection device is a wafer 90 that is not formed with a plurality of integrated circuits, and is formed as a circuit such as a package, a package LSI such as a BGA or a CSP, or a half circuit device such as an MCM. The inspection can constitute an inspection device. The embodiments of the present invention have been described above, and are not limited to the embodiments, and various modifications and changes can be made without departing from the scope of the invention. For example, in the above-described embodiment, the polyimine resin material layer 17 of the frame plate 15 is used, and a person who is formed of a metal plate, a mesh, or the like can be applied by a suitable modification. The inspected, 32, from the formed electricity to be inspected, by checking the electrode 9 1 , thereby forming a comparison in the direct electrical property, the number or wiring is limited to the shaped semiconductor crystal conducting volume body, but the gist of the present invention In the case of the use of the mold, etc. -33-200848746, the arrangement or installation form of the acyclic member 2 1 may be used, and may be made as appropriate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an embodiment of a sheet-like probe of the present invention. Fig. 2 is a cross-sectional view taken along line X-X of Fig. 1; Fig. 3 is a plan view showing the contact film of the sheet-like probe of Fig. 1 enlarged. Fig. 4 is a sectional view taken along line X-X of Fig. 3; Fig. 5 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 6 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Figure 7 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 8 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 9 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 10 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 1 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. -34- 200848746 Fig. 1 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 1 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 14 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 15 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 15 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 17 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 18 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Fig. 19 is a cross-sectional view showing the manufacturing process of the sheet-like probe of the present invention. Figure 20 is a cross-sectional view showing a schematic configuration of an inspection apparatus of a circuit device using a sheet-like probe manufactured by the method of the present invention. 21(a) and 21(b) are cross-sectional views showing the schematic configuration of the probe card of the inspection apparatus of Fig. 20. Fig. 22 is an enlarged perspective view showing the probe card of Fig. 21. [Description of main component symbols] 1 0 : Sheet-shaped probe 1 2 : Electrode structure - 35 - 200848746 1 2 a : Surface electrode portion 12a2 : Second surface electrode portion 12b : Back electrode portion 12c : Short-circuit portion 1 2d : Conductive Bonding layer 1 3 : coating film 15 : frame plate 1 5 Η : through hole 1 6 : metal frame plate 1 7 : polyimine resin material layer 2 0 : contact film 21 : ring member 30 : 1 Sheet 3 1 : Insulating sheet 3 1 Η : Through hole 32 : Metal sheet 33 : First conductive layer 40 : Second sheet 4 1 : Insulating sheet 4 1 Η : Through hole 42 : Metal sheet 43 : Second conductive layer 4 5 : photoresist layer 5 〇: probe card -36- 200848746 5 2 : guide pin 6 0 : inspection circuit board 6 1 : inspection electrode 70 : anisotropic conductive connector 71 : frame plate 72 : opening 73 : anisotropic Conductive sheet 74: conductive portion 7 5 : insulating portion 7 6 : protruding portion 80 : pressure plate 8 1 : wafer mounting table 82 : heater 9 〇 : wafer 9 1 : inspected electrode P : electrode structure Pitch h: protrusion height R of the surface electrode portion: diameter L of the surface electrode portion: outer diameter r of the back electrode portion: diameter of the short-circuit portion P: conductive particle-37-