JP2008070271A - Sheet-like probe, manufacturing method therefor and application thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sheet-like probe capable of stably maintaining an excellent electric connection state by minimizing the load applied in wafer inspection, and its manufacturing method. <P>SOLUTION: The sheet-like probe has an insulated layer, and a contact point film 16 having a plurality of electrode structures 22 that are arranged separately in the surface direction of the insulated layer and furthermore penetrate the insulated layer and extend in the thickness direction of it. Each of the electrode structures 22 comprises a surface electrode section 24 that is exposed to the surface of the insulated layer and projects from the surface of the insulated layer, a back surface electrode section 26 exposed to the back surface of the insulated layer, and a short circuit section that continuously penetrates the insulated layer and extends in the thickness direction of it from the base end of the surface electrode section 24 and is connected to the back surface electrode section. The short circuit section has a hollow shape section inside. The back surface electrode section 26 is provided with a through hole that has substantially the same diameter as that of the hollow shape section of the short circuit section and communicates with the hollow shape section of the short circuit section. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a sheet-like probe suitable as a probe device for making an electrical connection to a circuit, for example, an electrical test of a circuit such as an integrated circuit, a manufacturing method thereof, and an application thereof.

  For example, in an electrical inspection of a circuit device of an electronic component such as a wafer on which a large number of integrated circuits are formed or a semiconductor element, it has inspection electrodes arranged in accordance with a pattern corresponding to the pattern of the inspection target electrode of the circuit device under inspection. An inspection probe is used.

As such an inspection probe, a probe in which inspection electrodes made of pins or blades are arranged has been conventionally used.
When the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed and an inspection probe for inspecting the wafer is produced, it is necessary to arrange a very large number of inspection electrodes. Therefore, the inspection probe is extremely expensive.

Furthermore, when the pitch of the electrodes to be inspected is small, it is difficult to manufacture the probe device itself.
Further, since the wafer is generally warped and the state of the warp varies depending on the product (wafer), each of the inspection probes of the probe apparatus is stably and reliably applied to a large number of inspection electrodes of each wafer. It is practically difficult to make it contact.

  In order to cope with such a problem, an anisotropic conductive sheet is arranged on one surface of an inspection circuit board on which a plurality of inspection electrodes are formed according to the pattern of the electrode to be inspected on one surface. Patent Document 1 and Patent Document 2 propose a probe card in which a sheet-like probe in which a plurality of electrode structures extending through an insulating sheet in the thickness direction is arranged on a sheet is arranged.

  The sheet-like probe 100 of this probe card has a flexible circular insulating sheet 104 made of a resin such as polyimide as shown in FIG. 22, and the insulating sheet 104 has a plurality of electrodes extending in the thickness direction. The structures 102 are arranged according to the pattern of the electrodes to be inspected of the circuit device to be inspected.

In addition, a ring-shaped support member 106 made of, for example, ceramics is provided on the periphery of the insulating sheet 104 for the purpose of controlling the thermal expansion of the insulating sheet 104.
The support member 106 controls thermal expansion in the surface direction of the insulating sheet 104, and prevents positional deviation between the electrode structure 102 and the electrode to be inspected due to temperature change in the burn-in test.

  Further, each electrode structure 102 includes a protruding surface electrode portion 108 exposed on the surface of the insulating sheet 104 and a plate-like back surface electrode portion 110 exposed on the back surface of the insulating sheet 104, and the insulating sheet 104 has a thickness. The structure is integrally connected via a short-circuit portion 112 extending through in the direction.

However, such a sheet-like probe has the following problems.
For example, in a wafer having a diameter of 8 inches or more, 5000 or 10,000 or more electrodes to be inspected are formed, and the pitch of these electrodes to be inspected is 300 μm or less, and when it is fine, it is 160 μm or less.

  As a sheet-like probe for inspecting such a wafer, a probe having a large area corresponding to the wafer and having 5000 or 10,000 or more electrode structures arranged at a pitch of 300 μm or less is required. .

  However, if there is a large difference in the absolute amount of thermal expansion in the plane direction between the wafer and the insulating sheet of the sheet-like probe, the peripheral portion of the insulating sheet has a linear thermal expansion coefficient equivalent to the linear thermal expansion coefficient of the wafer. Even if it is fixed by the support member, it is difficult to reliably prevent the positional deviation between the electrode structure and the electrode to be inspected due to a temperature change during the burn-in test, so that a good electrical connection state is stably maintained. I can't.

  In addition, even if the inspection object is a small circuit device, if the distance between adjacent electrodes to be inspected is 50 μm or less, the position of the electrode structure and the electrode to be inspected due to temperature change during the burn-in test Since it is difficult to reliably prevent the deviation, a good electrical connection state cannot be stably maintained.

  On the other hand, in the patent document 3, the applicant of the present invention has a good electrical connection in the burn-in test even if the inspection object is a large area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch of the electrodes to be inspected. A probe card capable of maintaining a stable state and a manufacturing method thereof have already been proposed.

  That is, in Patent Document 3, as shown in FIG. 23 (a), a frame plate forming metal plate 202 and an insulating layer forming resin sheet 204 integrally laminated on the frame plate forming metal plate 202, And a through hole 208 is formed in the insulating layer forming resin sheet 204 of the laminate 206.

  Further, as shown in FIG. 23 (b), a short circuit connected to the frame plate forming metal plate 202 in the through hole 208 of the insulating layer forming resin sheet 204 by plating the laminated body 206. The surface electrode part 212 connected with the part 210 and the short circuit part 210 is formed.

  Then, as shown in FIG. 23C, the metal plate 202 for forming the through hole 214 is formed by etching the metal plate 202 for forming the frame plate, thereby forming one of the metal plates 202 for forming the frame plate. The back electrode portion 218 connected to the short-circuit portion 210 is formed by the portion.

  Thus, the contact film 224 in which the electrode structure 220 having the front surface electrode portion 212 exposed on the front surface and the back surface electrode portion 218 exposed on the back surface is held by the insulating layer 222 made of a flexible resin, and the contact film Thus, a sheet-like probe 200 composed of a metal frame plate 216 that supports 224 is obtained.

  In such a sheet-like probe 200 of Patent Document 3, since the thermal expansion in the surface direction of the insulating layer 222 is reliably regulated by the metal frame plate 216, the inspection target is, for example, a large area wafer having a diameter of 8 inches or more or a target to be inspected. Even in a circuit device with a very small pitch of the inspection electrodes, the burn-in test can reliably prevent displacement between the electrode structure and the electrode to be inspected due to temperature change, and a stable electrical connection can be maintained stably. It is.

However, as shown in FIG. 24A, when the wafer 300 to be inspected is left in an air environment for a long time or when it is exposed to a high temperature condition in a manufacturing process or an inspection process, the wafer 300 shown in FIG. As shown in (b), an oxide film 304 may be formed on the surface of the electrode 302 to be inspected.

  And as shown to Fig.25 (a), in the sheet-like probe 200 provided with the electrode structure 220 which consists of the spherical surface electrode part 212 as shown to patent document 3, it shows to FIG.25 (b). As described above, it is difficult to break the oxide film 304 formed on the surface of the wafer 300, and it may be difficult to electrically connect the inspection target electrode 302 of the wafer 300 and the electrode structure 220 of the sheet-like probe 200. there were.

  Therefore, as shown in FIGS. 26A and 26B, the oxide film 304 formed on the surface of the electrode 302 to be inspected on the wafer 300 is broken at the time of contact, and the electrode 302 to be inspected and the sheet of the wafer 300 are contacted. The tip shape of the surface electrode portion 402 of the electrode structure 404 formed on the sheet-like probe 400 is a pyramid or a truncated cone so that the electrode structure 404 of the probe 400 can be easily electrically connected. Can be considered.

  In such a truncated cone electrode, since the area of the surface electrode portion 402 in contact with the electrode to be inspected 302 is smaller than that of the spherical electrode, when the same load is applied, the amount of load applied per unit area is large. It becomes easy to break the oxide film 304.

Currently, the load applied at the time of wafer inspection is “8 g / electrode” calculated per electrode to be inspected.
For example, if the area of the contact portion in the case of a spherical electrode is b and the area of the contact portion in the case of a truncated cone electrode is 0.5b, the load per unit area at the time of contact for breaking the oxide film 304 is considered. Then, the load of “8 g / electrode” at the truncated cone electrode corresponds to the load of “16 g / electrode” at the spherical electrode.

Therefore, when inspecting a wafer 300 having an electrode to be inspected 302 having an oxide film 304 formed of a truncated cone electrode, the total load required at the time of the inspection can be achieved with a smaller pressure in the truncated cone electrode. The fact that the pressurization mechanism of the apparatus can be reduced in size and can be inspected with a smaller pressure leads to an improvement in the repeated use durability of the anisotropically conductive connector, resulting in a reduction in the inspection cost.
Japanese Patent Laid-Open No. 2001-15565 Japanese Patent Laid-Open No. 2002-184821 JP 2004-361395 A

  However, even with a truncated cone electrode, if the number of electrodes to be inspected is large, the load applied at the time of wafer inspection requires that much load, and further, the load applied per electrode to be inspected can be suppressed. It has been demanded.

  In view of such a current situation, an object of the present invention is to provide a sheet-like probe capable of suppressing a load applied during wafer inspection as much as possible and stably maintaining a good electrical connection state and a manufacturing method thereof. .

  In addition, the present invention provides a probe card capable of suppressing a load applied during wafer inspection as much as possible and stably maintaining a good electrical connection state, a circuit device inspection apparatus including the probe card, and a wafer inspection method. With the goal.

The present invention was invented in order to achieve the problems and objects in the prior art as described above,
The sheet-like probe of the present invention is
An insulating layer;
A contact film provided with a plurality of electrode structures that are spaced apart from each other in the surface direction of the insulating layer and that extend through the thickness direction of the insulating layer;
Each of the electrode structures is
A surface electrode part exposed on the surface of the insulating layer and protruding from the surface of the insulating layer;
A back electrode portion exposed on the back surface of the insulating layer;
Continuing from the base end of the front surface electrode portion and extending through the insulating layer in the thickness direction, consisting of a short circuit portion connected to the back surface electrode portion,
The short-circuit portion has a hollow-shaped portion therein, and the back electrode portion is provided with a through hole that is substantially the same diameter as the hollow-shaped portion of the short-circuit portion and communicates with the hollow-shaped portion of the short-circuit portion. It is characterized by being.

In addition, the manufacturing method of the sheet-like probe of the present invention,
Preparing a laminate in which a protective film is formed on each of the front and back surfaces of the insulating sheet;
Forming a recess in accordance with the pattern corresponding to the pattern of the electrode structure to be formed from the surface side of the laminate in the insulating sheet;
Forming a surface electrode portion in the electrode structure by depositing a metal in the recess;
Laminating an insulating film and a metal film in this order on the surface electrode part, and burying at least a part of the surface electrode part in the insulating film;
Forming a through hole according to a pattern corresponding to a pattern of an electrode structure to be formed in the metal film and the insulating film;
Conducting between the surface electrode portion and the metal film through the through-hole formed in the insulating film;
Forming a metal thin layer on the inner wall surface of the through-hole and the upper surface of the metal film, and forming a short-circuit portion having a hollow-shaped portion inside the electrode structure to be formed;
Etching the metal film to form the back electrode of the electrode structure to be formed provided with a through hole that is substantially the same diameter as the hollow shape portion of the short-circuit portion and communicates with the hollow shape portion of the short-circuit portion Forming a part;
It is characterized by having at least.

  In this way, the electrode structure of the sheet-like probe has a hollow-shaped portion inside the short-circuit portion, and the back electrode portion has substantially the same diameter as the hollow-shaped portion of the short-circuit portion and communicates with the hollow-shaped portion. If a through hole is provided, this conductive part will enter the hollow shape part of the short circuit part through the through hole of the back electrode part of the electrode structure when connecting to the conductive part of the anisotropic conductive connector, Connection can be made easily.

  Furthermore, a hollow-shaped part is formed inside the short-circuit part of the electrode structure of the sheet-like probe, and the back electrode part has a through hole that is substantially the same diameter as the hollow-shaped part of the short-circuit part and communicates with the hollow-shaped part. Since the plate-like portion constituting the surface electrode portion has a doubly-supported beam shape, the electrode structure has a spring property, so that the surface electrode portion is in contact with the electrode to be inspected on the wafer. Connection can be made well.

The sheet-like probe of the present invention is
The inside of the hollow shape part of the short circuit part and the inside of the through hole of the back electrode part are filled with conductive paste.
In addition, the method for manufacturing the sheet-like probe of the present invention includes:
Packing the conductive paste into the hollow portion of the short-circuit portion and the through-hole of the back electrode portion; and
It is characterized by having.

  With this configuration, when the electrode structure is relatively large, the electrode structure cannot withstand the pressing and is damaged when the wafer is connected to the electrode to be inspected, resulting in poor connection. Can be reliably prevented.

The sheet-like probe of the present invention is
The outer diameter of the surface electrode part is larger than the outer diameter of the short-circuit part.

  By comprising in this way, the contact area of the through-hole of an insulating layer and an electrode structure can fully be ensured, and it can prevent reliably that an electrode structure falls off from a through-hole. .

The sheet-like probe of the present invention is
An outer diameter of the back electrode portion is larger than an outer diameter of the short-circuit portion.

  By comprising in this way, the contact area of the through-hole of an insulating layer and an electrode structure can fully be ensured, and it can prevent reliably that an electrode structure falls off from a through-hole. .

The probe card of the present invention is
A circuit board for inspection in which an inspection electrode corresponding to an electrode to be inspected of a circuit device to be inspected is formed;
An anisotropic conductive connector disposed on the inspection circuit board;
The sheet-like probe according to any one of the above, which is disposed on the anisotropic conductive connector.

Moreover, the inspection apparatus for the circuit device of the present invention comprises:
The probe card described above is provided.
Further, the wafer inspection method of the present invention includes:
Each integrated circuit on a wafer on which a plurality of integrated circuits are formed is electrically connected to a tester via the probe card described above, and an electrical inspection of each integrated circuit is performed.

  According to the sheet-like probe of the present invention, the electrode structure has a hollow-shaped portion inside the short-circuited portion, and the back-surface electrode portion has substantially the same diameter as the hollow-shaped portion of the short-circuited portion. If the through hole communicating with the conductive portion of the anisotropically conductive connector is provided, the conductive portion is connected to the hollow shape portion of the short-circuit portion via the through hole of the back electrode portion of the electrode structure. Therefore, the connection can be made easily.

  Furthermore, since the surface electrode part of the electrode structure has a plate-like part constituting the surface electrode part in the form of a double-supported beam, the electrode structure has a spring property, and the inspected electrode of the wafer Can be connected satisfactorily.

In addition, since the surface electrode portion of the electrode structure has a sharp tip shape, the oxide film formed on the surface of the electrode to be inspected can be destroyed with a low load, and reliably connected to the electrode to be inspected on the wafer. can do.

Hereinafter, embodiments (examples) of the present invention will be described in more detail with reference to the drawings.
The accompanying drawings are for illustration purposes, and specific sizes and shapes of the respective parts will be understood by those skilled in the art based on the description of the present specification and conventional techniques.
1. For sheet probes:
1A and 1B are diagrams showing an embodiment of a sheet-like probe according to the present invention, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line XX in FIG. 2 is an enlarged plan view showing a contact film of the sheet-like probe of FIG. 1, and FIG. 3 is a partial sectional view taken along line XX of FIG.

The sheet-like probe of this embodiment is used for conducting an electrical inspection of each integrated circuit in a wafer state on a wafer of 8 inches or the like on which a plurality of integrated circuits are formed.
As shown in FIGS. 1A and 2, the sheet-like probe 10 has a metal frame plate 14 in which a through hole 12 is formed, and a contact film 16 is disposed in the through hole 12. Further, the contact film 16 is supported on the edge of the through hole 12. In this specification, this portion is referred to as a support portion 18.

As shown in FIGS. 1B and 3, in the support portion 18, a resin insulating layer 20 is supported on the metal frame plate 14.
Further, the contact film 16 has a structure in which an electrode structure 22 is formed through a flexible insulating layer 20.

  That is, in the contact film 16, a plurality of electrode structures 22 extending in the thickness direction of the insulating layer 20 are arranged apart from each other in the surface direction of the insulating layer 20 according to a pattern corresponding to the electrode to be inspected of the wafer to be inspected. ing.

  As shown in FIG. 3, such an electrode structure 22 has a surface comprising a protrusion-like protrusion 24 a that protrudes from the surface of the insulating layer 20 and a plate-like part 24 b that is formed at the lower end of the protrusion. The electrode portion 24, the flange-shaped back surface electrode portion 26 exposed on the back surface of the insulating layer 20, and the short-circuit portion 28 penetrating in the thickness direction of the insulating layer 20 are integrated. 28 has a hollow-shaped portion 28H therein, and the back electrode portion 26 is formed with a through-hole 26H having substantially the same diameter as the hollow-shaped portion 28H of the short-circuit portion 28 and communicating with the hollow-shaped portion 28H. Yes.

A flat plate ring-shaped support member 32 having rigidity is provided on the periphery of the sheet-like probe 10.
<Metal frame plate>
The metal frame plate 14 preferably has a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably −1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, and particularly preferably −1. × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.

  Specific examples of the material constituting the metal frame plate 14 include an Invar type alloy such as Invar, an Elinvar type alloy such as Elinvar, an alloy such as Super Invar, Kovar, 42 alloy or alloy steel, molybdenum, molybdenum alloy or alloy steel. Is mentioned.

Furthermore, it is preferable that the thickness of the metal frame board 14 is 3-150 micrometers, More preferably, it is 5-100 micrometers.
When this thickness is too small, the strength required for the metal frame plate 14 that supports the sheet-like probe 10 may not be obtained.

On the other hand, if this thickness is excessive, it may be difficult to separate the metal frame plate 14 and the back electrode portion 26 by etching in a manufacturing method described later.
In the sheet-like probe 10 shown in FIG. 1, a plurality of through holes 12 are formed at each position corresponding to each integrated circuit on the wafer to be inspected as shown in FIG. A metal frame plate 14 is formed, and insulating layers 20 are formed in these through holes 12 so as to be isolated from each other.

  However, as shown in FIG. 5 (FIG. 5 (a) is a plan view and FIG. 5 (b) is a sectional view taken along line XX of FIG. 5 (a)), the insulating layer 20 is integrated and continuous. As shown in FIG. 6 (FIG. 6 (a) is a plan view and FIG. 6 (b) is a cross-sectional view taken along line XX of FIG. 6 (a)). The insulating layer 20 may be divided so as to include a plurality of contact films 16 (in the figure, divided into four parts), and a continuous support portion 18 may be formed for the plurality of contact films 16.

  Further, as shown in FIG. 4B, a ring-shaped metal frame plate 14 having one large-diameter through hole 12 formed at the center is formed, and as shown in FIG. 7 (FIG. 7A). Is a plan view, and FIG. 7B is a cross-sectional view taken along line XX in FIG. 7A.) An insulating layer 20 is integrated with the through-hole 12, and this insulation is formed as one continuous support portion 18. It is also possible to form a plurality of electrode structures 22 at each position corresponding to each integrated circuit on the wafer to be inspected on the layer 20.

Thus, by comprising from the metal metal frame board 14, mechanical strength required when using it is obtained, and durability becomes high also in repeated use.
<Insulating layer>
As the insulating layer 20, a resin film having flexibility is used.

  A material for forming the insulating layer 20 is not particularly limited as long as it is an electrically insulating resin material. For example, a polyimide resin, a liquid crystal polymer, and a composite material thereof can be used.

  When the insulating layer 20 is formed of polyimide, the insulating layer 20 may be formed using a thermosetting polyimide, a thermoplastic polyimide, a photosensitive polyimide, a polyimide varnish diluted with a polyimide precursor in a solvent, a solution, or the like. preferable.

Furthermore, the thickness of the insulating layer 20 is preferably 5 to 150 μm, more preferably 7 to 100 μm, and still more preferably 10 to 50 μm from the viewpoint of obtaining good flexibility. <Electrode structure>
Examples of the material of the electrode structure 22 include nickel, iron, copper, gold, silver, palladium, iron, cobalt, tungsten, rhodium, and alloys or alloy steels thereof.

The electrode structure 22 may be entirely formed of a single metal or alloy, or may be formed by stacking two or more kinds of metals or alloys.
Further, when an electrical inspection is performed on an electrode to be inspected having an oxide film formed on the surface, the electrode structure 22 of the sheet-like probe 10 is brought into contact with the electrode to be inspected, and the surface electrode portion 24 of the electrode structure 22 inspects the object to be inspected. It is necessary to destroy the oxide film on the surface of the electrode and make an electrical connection between the electrode structure 22 and the electrode to be inspected.

Therefore, it is desirable that the surface electrode portion 24 of the electrode structure 22 has a hardness that can easily break the oxide film.
In order to obtain such a surface electrode portion 24, a powder material having high hardness can be contained in the metal forming the surface electrode portion 24.

Examples of such a powder substance include diamond powder, silicon nitride, silicon carbide, ceramics, and glass.
By containing an appropriate amount of these non-conductive powder substances, the oxide film formed on the surface of the electrode to be inspected is destroyed by the surface electrode portion 24 of the electrode structure 22 without impairing the conductivity of the electrode structure 22. be able to.

Further, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 24 may be a sharp protrusion, and fine irregularities may be formed on the surface of the surface electrode portion 24. .
In the present embodiment, the front end portion (projecting portion 24a) of the surface electrode portion 24 has a quadrangular pyramid shape, but may have an appropriate shape as necessary, for example, a cone.

Depending on the number of electrodes to be inspected of the integrated circuit on the wafer, for example, several tens or more electrode structures 22 are formed on one contact film 16.
The shape of such an electrode structure 22 will be described below.

  As shown in FIG. 3, the surface electrode portion 24 has a quadrangular pyramid-shaped protrusion 24a having a width t2 and a height t1, and a lower end of the protrusion 24a having a diameter R1 larger than the width t2 of the protrusion 24a. It is comprised from the plate-shaped part 24b which has thickness t3.

  The protruding portion 24a of the surface electrode portion 24 protrudes from the surface of the insulating layer 20 by a height t1, and the plate-like portion 24b has a thickness t3 portion embedded in the insulating layer 20 and only the surface thereof is an insulating layer. It is exposed on the same plane as the surface of 20.

Next, the short-circuit portion 28 has a diameter R3 that is larger than the width t2 of the protruding portion 24a of the surface electrode portion 24 and is slightly narrower than the diameter R1 of the plate-like portion 24b, and penetrates the insulating layer 20 while maintaining substantially the same diameter. It has a shape.
Further, the short-circuit portion 28 has a hollow-shaped portion 28H inside from the side opposite to the front surface electrode portion 24 with the insulating layer 20 interposed therebetween, and the back-surface electrode portion 26 further includes the hollow-shaped portion 28H of the short-circuit portion 28. A through hole 26H having substantially the same diameter and communicating with the hollow portion 28H is formed.

Further, a back electrode portion 26 having a flange shape toward the back surface of the insulating layer 20 and having a thickness t4 is formed at the lower end of the short-circuit portion 28.
Such a back electrode portion 26 has a diameter R2 that is substantially the same size as the diameter R1 of the plate-like portion 24b of the front electrode portion 24.

In the above description, since the protrusion 24a of the surface electrode portion 24 has a quadrangular pyramid shape, the width t2 is used. However, for example, in the case of a conical shape, the diameter may be replaced with a diameter.
In FIG. 3, the diameter R1 of the plate-like portion 24b of the front surface electrode portion 24 and the diameter R2 of the back surface electrode portion 26 are substantially the same shape, but the diameter R1 can be made larger than the diameter R2. Yes, as long as the electrode structure 22 is set so as not to fall off the insulating layer 20, any size may be used, and it is preferable to set appropriately.

Such an electrode structure 22 penetrates up and down the thickness H of the insulating layer 20 and is formed at a constant arrangement pitch P.
<Supporting member>
Examples of the material of the support member 32 include Invar type alloys such as Invar and Super Invar, Elinvar type alloys such as Erin bar, low thermal expansion metal materials such as Kovar and 42 alloy, and ceramic materials such as alumina, silicon carbide, and silicon nitride. .

The thickness of the support member 32 is preferably 2 mm or more.
By setting the thickness of the ring-shaped support member 32 in such a range, the influence due to the difference in thermal expansion coefficient between the metal frame plate 14 and the support member 32, that is, the electrode structure 22 and the electrode to be inspected due to the temperature change. Can be effectively suppressed.

  Further, by supporting the sheet-like probe 10 with the rigidity of the support member 32, in the probe card described later, for example, a hole formed in the support member 32 and a guide pin provided on the probe card are engaged, or the support member The electrode structure 22 provided on the contact film 16 of the sheet-like probe 10 is made to fit the inspection electrode of the object to be inspected or anisotropically by fitting the peripheral step 32 provided on the peripheral edge of the probe card 32 and the peripheral edge of the probe card. It can be easily aligned with the conductive portion of the conductive connector.

Furthermore, even when used for repeated inspections, it is possible to reliably prevent sticking to the inspection object and displacement of the electrode structure 22 from a predetermined position.
<Coating film>
Although not essential, the back electrode part 26 of the electrode structure 22 may be provided with a coating film (not shown).

A coating film (not shown) is preferably provided, for example, when the material of the back electrode part 26 is not chemically stable or when the conductivity is insufficient.
As a material, a highly conductive metal such as chemically stable gold, silver, palladium, or rhodium can be used.

  Further, a metal coating film can be formed also on the surface electrode portion 24 of the electrode structure 22. For example, when the electrode to be inspected is made of a solder material, the solder material is prevented from diffusing. In view of this, it is desirable to coat the surface electrode portion 24 with a diffusion-resistant metal such as silver, palladium, or rhodium.

  According to such a sheet-like probe 10, since the contact film 16 is supported in the through hole 12 of the metal frame plate 14, the area of the contact film 16 disposed in the through hole 12 can be reduced.

  For example, if a metal frame plate 14 in which a plurality of through holes 12 are formed corresponding to an electrode region in which an electrode to be inspected of a circuit device to be inspected is formed, the metal frame plate 14 is disposed in each of these through holes 12, The area of each contact film 16 supported at the peripheral edge can be greatly reduced.

  Since the contact film 16 having such a small area has a small absolute amount of thermal expansion in the surface direction of the insulating layer 20, the thermal expansion of the insulating layer 20 can be reliably regulated by the metal frame plate 14.

Therefore, even if the inspection object is a large-area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch between the electrodes to be inspected, the positions of the electrode structure and the electrodes to be inspected due to temperature change during the burn-in test Since the deviation is reliably prevented, a good electrical connection state can be stably maintained.
2. About the manufacturing method of sheet probe:
Hereinafter, the manufacturing method in the Example of the sheet-like probe 10 of this invention is demonstrated.

First, as shown in FIG. 8A, a plate-like insulating sheet 34A having a crystal plane made of single crystal silicon as a surface, and formed on the front and back surfaces of the insulating sheet 34A and made of silicon dioxide. A laminated body 10A composed of the protective films 36A and 38A is prepared.

  Next, as shown in FIG. 8B, the protective films 36A and 38A are etched on the respective surfaces of the protective films 36A and 38A formed on both surfaces of the insulating sheet 34A by photolithography. The resist films 40A and 42A are formed.

Thereafter, as shown in FIG. 8C, a plurality of pattern holes 40K corresponding to the recesses 44 to be formed are formed in the resist film 40A formed on the upper surface side of the insulating sheet 34A.
Next, as shown in FIG. 9A, the protective film 36A formed on one surface of the insulating sheet 34A is etched through the pattern hole 40K of the resist film 40A, thereby the protective film 36A. Then, a pattern hole 36K communicating with the pattern hole 40K of the resist film 40A is formed.

  Then, as shown in FIG. 9B, the resist films 40A and 42A are removed, and further, as shown in FIG. 9C, the protective films 36A and 38A are formed on the one surface of the insulating sheet 34A. As a result, an anisotropic etching process is performed through the pattern hole 36K of the protective film 36A, whereby the laminated body 10A in which the quadrangular pyramid-shaped recess 44 is formed is obtained.

As the insulating sheet 34A, it is preferable to use a silicon wafer having a crystal plane as a surface as it is or processed into an appropriate shape.
Further, hydrofluoric acid or the like can be used as an etchant for etching the protective film 36A. In addition, as an etchant for anisotropically etching the insulating sheet 34A, an aqueous solution such as potassium hydroxide or ethylenediamine can be used.

  Furthermore, the processing temperature and the processing time as conditions for the anisotropic etching processing of the insulating sheet 34A are appropriately set according to the type of the etching solution, the depth of the recess 44, and the processing temperature is, for example, 60 to 85 ° C.

  Next, as shown in FIG. 10A, a pattern hole 46K having a pattern corresponding to the plate-like portion 24b of the surface electrode portion 24 to be formed is provided in a region other than the recess 44 on one surface of the insulating sheet 34A. A resist film 46A is formed.

  Thereafter, as shown in FIG. 10B, a plating process, a sputtering process, or a vapor deposition process is performed on the surface of the resist film 46A and the region exposed by the pattern hole 46K of the resist film 46A on one surface of the insulating sheet 34A. Thus, the metal layer 48 is formed.

  Then, as shown in FIG. 10C, a resist film 50A having pattern holes 50K communicating with each pattern hole 46K of the resist film 46A is formed in a portion of the metal layer 48 located on the resist film 46A.

  Next, as shown in FIG. 11A, the metal 44 is deposited in each of the recesses 44 of the insulating sheet 34A and its peripheral portion, that is, in the pattern holes 46K and 50K of the resist films 46A and 50A. The surface electrode part 24 which consists of the plate-like part 24b extended in the surface direction of the insulating sheet 34A continuously from the part 24a and its base end part is formed.

  In addition, as a method for depositing metal in each of the recesses 44 of the insulating sheet 34A and its peripheral part, electrolytic plating, chemical plating, sputtering or vapor deposition is used with the metal layer 48 as a common electrode. However, electrolytic plating treatment and chemical plating treatment are preferable, and electrolytic plating treatment is more preferable.

  Then, as shown in FIG. 11B, by removing the resist film 46A, the metal layer 48, and the resist film 50A from one surface of the insulating sheet 34A, the electrode structure 22 to be formed on the insulating sheet 34A. A laminated body 10B in which a plurality of surface electrode portions 24 are arranged according to a pattern corresponding to the pattern is obtained.

  Next, as shown in FIG. 11C, a circular metal film 52A and an insulating film 54A made of a resin integrally laminated on the surface of the metal film 52A are formed on the surface electrode portion 24 of the laminate 10B. By disposing them so as to be in contact with each other and performing thermocompression treatment, at least a part of each of the surface electrode portions 24 is embedded in the insulating film 54A.

In this laminated body 10B, the metal film 52A is for forming the back electrode part 26 to be formed, and it is preferable to use the same material as that of the front electrode part 24.
As the resin for forming the insulating film 54A, an etchable polymer material is preferably used, and more preferably a polyimide resin.

  Next, as shown in FIG. 12A, a resist film 56A in which a plurality of pattern holes 56K are formed according to a pattern corresponding to the pattern of the electrode structure 22 to be formed is formed on the metal film 52A in the stacked body 10B. To do.

  Further, as shown in FIG. 12B, the metal film 52A is subjected to an etching process on the exposed portion of the resist film 56A through the pattern hole 56K, so that the metal film 52A has a resist film 56A. A plurality of through holes 52H communicating with the pattern hole 56K are formed.

  Thereafter, as shown in FIG. 12 (c), the insulating film 54A is irradiated with laser on the exposed portions of the resist film 56A through the pattern holes 56K and the through holes 52H of the metal film 52A. By removing the portion, through holes 54H communicating with the through holes 52H of the metal film 52A are formed in the insulating film 54A.

  At this time, the surface portion of the through-hole 54H is carbonized by a laser, whereby the metal film 52A and the plate-like portion 24b constituting the surface electrode portion 24 are electrically connected. As a laser used when forming the through-hole 54H, an excimer laser, a carbon dioxide laser, a YAG laser, a UVYAG laser, or the like can be used.

  Further, the carbonized portion of the surface portion of the through-hole 54H may use chemical plating or sputtering in addition to the laser, and any method may be used as long as the metal film 52A and the plate-like portion 24b can be electrically connected. Is.

  Next, as shown in FIG. 13A, the resist film 56A is removed from the stacked body 10B in which the through holes 52H and 54H are formed in this way, and then, as shown in FIG. A resist film 57A in which a plurality of pattern holes 57K are formed according to a pattern corresponding to the pattern of the back electrode portion 26 to be formed is formed on the metal film 52A.

  Further, as shown in FIG. 13C, the thin metal layer 58A is formed on the inner wall surface of the through hole 54H of the laminated body 10B and the upper surface of the metal film 52A where the resist film 57A is not formed.

Next, as shown in FIG. 14A, a plating process, a sputtering process, or a vapor deposition process is performed on the upper surface of the thin metal layer 58A and the upper surface of the plate-like portion 24b of the surface electrode portion 24 of the electrode structure 22 to be formed. Thereby, the metal layer 60 is formed.

  Further, as shown in FIG. 14B, the resist film 57A is removed from the laminated body 10B, and the metal film 52A is further etched as shown in FIG. 14C. The back electrode portion 26 of the electrode structure 22 is formed.

Next, as shown in FIG. 15A, the protective film 38A and the insulating sheet 34A are removed from the laminate 10B to obtain a laminate 10C.
Further, as shown in FIG. 15B, the protective film 36A is removed from the stacked body 10C.

Then, as shown in FIG. 15C, a resist film 62A is formed on the insulating film 54A so as to expose a part of the insulating film 54A of the stacked body 10C.
Further, as shown in FIG. 16A, by etching the insulating film 54A in this state, a part of the metal film 52A is exposed.

  Next, as shown in FIG. 16B, by removing the resist film 62A from the surface of the insulating film 54A, the short-circuit portion 28 has a hollow-shaped portion 28H, and the back electrode portion 26 has a short-circuit portion. Thus, the sheet-like probe 10 having the electrode structure 22 which is substantially the same diameter as the 28 hollow-shaped portions 28H and provided with the through holes 26H communicating with the hollow-shaped portions 28H is obtained.

  In the sheet-like probe 10 obtained by such a manufacturing method, the short-circuit portion 28 has a hollow-shaped portion 28H therein, and the back electrode portion 26 has substantially the same diameter as the hollow-shaped portion 28H of the short-circuit portion 28. Since the through hole 26H communicating with the hollow portion 28H is formed, this conductive portion is a through hole of the back electrode portion 26 when connected to a conductive portion of an anisotropic conductive connector described later. It will enter into the hollow shape part 28H of the short circuit part 28 via 26H, and a connection can be performed easily.

  Furthermore, since the surface electrode portion 24 of the electrode structure 22 has a plate-like portion 24b portion constituting the surface electrode portion 24 in a doubly-supported beam shape, the electrode structure 22 has a spring property, and thus the wafer. It is possible to satisfactorily connect to the electrode to be inspected.

  In addition, since the surface electrode portion 24 of the electrode structure 22 has a sharp tip shape with the protruding portion 24a, the oxide film formed on the surface of the electrode to be inspected can be destroyed with a low load, and the wafer is inspected reliably. It can be connected to an electrode.

  18A and 18B are photographed by taking out only the electrode structure 22 portion of the sheet-like probe 10 manufactured by the manufacturing method described above. According to this, the short-circuit portion 28 of the electrode structure 22 has a hollow-shaped portion 28H therein, and the back electrode portion 26 has substantially the same diameter as the hollow-shaped portion 28H of the short-circuit portion 28 and has a hollow shape. It can be confirmed that the through hole 26H communicating with the portion 28H is formed, and the protruding portion 24a of the surface electrode portion 24 has a sharp tip shape.

  Although not shown, a conductive paste is used in the hollow shape portion 28H of the short-circuit portion 28 of the sheet-like probe 10 shown in FIG. 16B and the through hole 26H of the back electrode portion 26. It is also possible to do. This is because when the electrode structure 22 is relatively large and the short-circuit portion 28 is hollow, the electrode structure 22 cannot withstand pressing and is damaged when connected to the electrode to be inspected. This is because a connection failure may be expected.

In this case, as the conductive paste, the short-circuit portion 28 has a hollow shape portion 28H, and the back electrode portion 26 has substantially the same diameter as the hollow shape portion 28H of the short-circuit portion 28 and has a hollow shape portion 28H.
It is preferable to use a highly elastic conductive paste so as not to lose the spring property due to the provision of the through-hole 26H communicating with the elastic hole, for example, an elastic polymer material that forms an anisotropic conductive sheet 76 to be described later It is preferable to use a conductive paste in which conductive metal particles are added, an epoxy-based conductive adhesive, a urethane-based conductive adhesive, a silicone-based conductive adhesive, or a polyimide-based conductive adhesive.

Further, the sheet-like probe 10 (see FIG. 17A) obtained by any one of the above manufacturing methods and having the contact film 16 supported by the support portion 18 of the metal frame plate 14 is the peripheral portion of the sheet-like probe 10. That is, a flat plate ring-shaped support member 32 having rigidity as shown in FIG. 17B is provided on the outer peripheral edge of the metal frame plate 14, for example, via an adhesive.
3. About inspection equipment for probe cards and circuit devices:
FIG. 19 is a cross-sectional view showing an embodiment of the circuit device inspection apparatus of the present invention and a probe card used therefor, FIG. 20 is a cross-sectional view showing a state before and after assembly of the probe card, and FIG. It is sectional drawing which showed the structure of the principal part of a probe card.

  As shown in FIGS. 19 to 21, this inspection apparatus is used to perform an electrical inspection of each integrated circuit on the wafer 64 on which a plurality of integrated circuits are formed in the state of the wafer 64.

  A probe card 66 of this inspection apparatus includes an inspection circuit board 68, an anisotropic conductive connector 70 disposed on the surface of the inspection circuit board 68, and a sheet disposed on the surface of the anisotropic conductive connector 70. The probe 10 is provided.

A plurality of inspection electrodes 72 are formed on the surface of the inspection circuit board 68 in accordance with the inspection electrode patterns of all the integrated circuits formed on the wafer 64 to be inspected.
As a substrate material for the circuit board 68 for inspection, a composite resin substrate material such as glass fiber reinforced epoxy resin, glass fiber reinforced phenol resin, glass fiber reinforced polyimide resin, glass fiber reinforced bismaleimide triazine resin, glass, carbon dioxide Examples thereof include ceramic substrate materials such as silicon and alumina, and laminated substrate materials obtained by laminating a resin such as an epoxy resin and a polyimide resin using a metal plate as a core material.

The probe card 66 for use in the burn-in test has a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, more preferably 1 × 10 as a substrate material. It is desirable to use one having a density of ^{−6 to} 6 × 10 ⁻⁶ / K.

As shown in FIG. 19, the anisotropic conductive connector 70 includes a disk-shaped frame plate 74 in which a plurality of through holes are formed.
The through hole of the frame plate 74 is formed corresponding to each integrated circuit formed on the wafer 64 to be inspected, for example.

Inside the through hole, an anisotropic conductive sheet 76 having conductivity in the thickness direction is arranged independently of the adjacent anisotropic conductive sheet 76 in a state of being supported on the peripheral part of the through hole. .
The frame plate 74 is formed with positioning holes (not shown) for positioning the sheet-like probe 10 and the inspection circuit board 68.

  Although the thickness of the frame board 74 changes with materials, it is preferable that it is 20-600 micrometers, More preferably, it is 40-400 micrometers. When this thickness is less than 20 μm, the strength required when the anisotropic conductive connector 70 is used may not be obtained, and the durability tends to be low.

  On the other hand, when the thickness exceeds 600 μm, the anisotropic conductive sheet 76 formed in the through hole becomes excessively thick, and the good conductivity of the connecting conductive portion and the insulation between the adjacent connecting conductive portions are obtained. It may not be obtained.

The shape and dimensions of the through holes of the frame plate 74 are designed according to the dimensions, pitch and pattern of the electrodes to be inspected of the wafer 64 to be inspected.
The material of the frame plate 74 is preferably a material that does not easily deform the frame plate 74 and has such a rigidity that the shape can be stably maintained. Specific examples include a metal material, a ceramic material, and a resin material. .

  Specific examples of the metal material include metals such as iron, copper, nickel, titanium, and aluminum, or alloys or alloy steels in which two or more of these are combined. When the frame plate 74 is formed of a metal material, an insulating coating may be applied to the surface of the frame plate 74.

In the probe card 66 for use in the burn-in test, the material of the frame plate 74 has a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, more preferably. Is preferably 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.

  Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Erin bar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

As shown in FIG. 21, the anisotropic conductive sheet 76 includes a plurality of connecting conductive portions 78 extending in the thickness direction, and insulating portions 81 that insulate the conductive portions 78 from each other.
The conductive portion 78 contains the conductive particles 78a exhibiting magnetism densely in an aligned state in the thickness direction.

Further, the conductive portion 78 protrudes from both surfaces of the anisotropic conductive sheet 76, and the protruding portions 80 are formed on both surfaces.
The thickness of the anisotropic conductive sheet 76 (when the conductive portion 78 protrudes from the surface, the thickness of the conductive portion 78) is preferably 50 to 3000 μm, more preferably 70 to 2500 μm, and particularly preferably. 100 to 2000 μm. If this thickness is 50 μm or more, the anisotropic conductive sheet 76 having sufficient strength can be obtained reliably.

Moreover, if this thickness is 3000 micrometers or less, the electroconductive part 78 which has a required electroconductivity characteristic will be obtained reliably.
The protrusion height of the protrusion 80 is preferably 100% or less of the shortest width or diameter of the protrusion 80, and more preferably 70% or less.

By forming the projecting portion 80 having such a projecting height, conductivity is reliably obtained without buckling when the projecting portion 80 is pressurized.
The thickness of one of the bifurcated portions supported by the frame plate 74 of the anisotropic conductive sheet 76 is preferably 5 to 600 μm, more preferably 10 to 500 μm, and particularly preferably 20 to 400 μm.

Further, as shown in the figure, the anisotropic conductive sheet 76 may be supported only on one side of the frame plate 74 in addition to the case where the anisotropic conductive sheet 76 is supported in a bifurcated shape on both sides of the frame plate 74.
As the elastic polymer material forming the anisotropic conductive sheet 76, a heat-resistant polymer material having a crosslinked structure is preferable.

  Examples of the curable polymer substance-forming material that can be used to obtain such a crosslinked polymer substance include silicone rubber, polybutadiene rubber, natural rubber, polyisoprene rubber, styrene-butadiene copolymer rubber, acrylonitrile- Conjugated diene rubbers such as butadiene copolymer rubbers and hydrogenated products thereof, block copolymer rubbers such as styrene-butadiene-diene block copolymer rubbers, styrene-isoprene block copolymers, and hydrogenated products thereof, Examples include chloroprene rubber, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, and soft liquid epoxy rubber. Among these, silicone rubber is preferable from the viewpoint of moldability and electrical characteristics.

As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be a condensation type, an addition type, a vinyl group or a hydroxyl group. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, and methylphenyl vinyl silicone raw rubber.

Further, a curing catalyst can be contained in the polymer substance-forming material.
Examples of such a curing catalyst include organic peroxides such as benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide and ditertiary butyl peroxide, fatty acid azo compounds, and hydrosilylation catalysts.

  The amount of the curing catalyst used is appropriately selected in consideration of the type of polymer substance forming material, the type of curing catalyst, and other curing treatment conditions, but usually 3 to 100 parts by weight of the polymer substance forming material. 15 parts by weight.

  As the conductive particles 78a contained in the conductive portion 78 of the anisotropic conductive sheet 76, particles exhibiting magnetism are preferable. Examples of such particles exhibiting magnetism include metal particles such as iron, nickel and cobalt, alloy particles thereof, and particles containing these metals.

  These particles are used as core particles, and the surface of the core particles is plated with a metal having good conductivity such as gold, silver, palladium, rhodium, or non-magnetic metal particles, inorganic particles such as glass beads, or polymer particles. It is also possible to use particles in which a core particle is plated with a conductive magnetic material such as nickel or cobalt on the surface of the core particle, or particles in which the core particle is coated with both a conductive magnetic material and a metal having good conductivity.

  Of these, nickel particles are used as core particles, and the surface thereof is plated with a metal having good conductivity such as gold or silver. The surface of the core particles can be coated with the conductive metal by, for example, electroless plating.

  The conductive particles obtained by coating the surface of the core particles with a conductive metal have a conductive metal coverage on the particle surface (ratio of the conductive metal coating area to the surface area of the core particles) from the viewpoint of obtaining good conductivity. % Or more, more preferably 45% or more, and particularly preferably 47 to 95%.

  The coating amount of the conductive metal is preferably 2.5 to 50% by weight of the core particles, more preferably 3 to 45% by weight, still more preferably 3.5 to 40% by weight, particularly preferably 5 to 30%. % By weight.

  The particle diameter of the conductive particles 78a is preferably 1 to 500 μm, more preferably 2 to 400 μm, still more preferably 5 to 300 μm, and particularly preferably 10 to 150 μm.

Moreover, it is preferable that the particle diameter distribution (Dw / Dn) of the electroconductive particle 78a is 1-10, More preferably, it is 1-7, More preferably, it is 1-5, Most preferably, it is 1-4.
By using the conductive particles 78a that satisfy such conditions, the anisotropic conductive sheet 76 can be easily deformed by pressure, and sufficient electrical contact can be obtained between the conductive particles 78a in the conductive portion 78. It is done.

Further, the shape of the conductive particles 78a is preferably spherical, star-shaped, or a lump shape of secondary particles in which primary particles are aggregated in that it can be easily dispersed in the polymer substance-forming material.
Further, the surface of the conductive particles 78a may be treated with a coupling agent such as a silane coupling agent. Thereby, the adhesiveness of the electroconductive particle 78a and an elastic polymer substance becomes high, and durability in the repeated use of the elastic anisotropic conductive film obtained becomes high.

  The content ratio of the conductive particles 78a in the conductive portion 78 is 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the conductive portion 78 having a sufficiently small electric resistance value may not be obtained.

On the other hand, when this ratio exceeds 60%, the obtained conductive part 78 tends to be fragile, and the necessary elasticity may not be obtained.
In the polymer substance-forming material, an inorganic filler such as normal silica powder, colloidal silica, airgel silica, alumina, or the like can be contained as necessary. By including such an inorganic filler, the thixotropy of the molding material is ensured and the viscosity thereof is increased. Further, the dispersion stability of the conductive particles 78a is improved, and the strength of the anisotropic conductive sheet 76 obtained by the curing process is increased.

The anisotropic conductive connector 70 can be manufactured by a method described in, for example, Japanese Patent Application Laid-Open No. 2002-334732.
As shown in FIGS. 19 and 20, a pressure plate 82 for pressing the probe card 66 downward is provided on the back surface of the inspection circuit board 68 of the probe card 66. A wafer mounting table 84 on which the wafer 64 is mounted is provided.

A heater 86 is connected to each of the pressure plate 82 and the wafer mounting table 84.
As shown in FIG. 19, the ring-shaped support member 32 of the sheet-like probe 10 is fitted into a circumferential fitting step portion provided on the pressure plate 82.

A guide pin 88 is inserted through the positioning hole of the anisotropic conductive connector 70.
As a result, the anisotropic conductive connector 70 is arranged so that the respective conductive portions 78 of the anisotropic conductive sheet 76 are in contact with the respective inspection electrodes 72 of the inspection circuit board 68, and this anisotropic conductive connector 70. The sheet-like probe 10 is disposed on the surface of the anisotropic conductive sheet 70 so that the respective electrode structures 22 are in contact with the respective conductive portions 78 of the anisotropic conductive connector 70. In this state, the three members are fixed. .

  A wafer 64 to be inspected is placed on the wafer mounting table 84, and the probe card 66 is pressed downward by the pressure plate 82, whereby each surface electrode portion 24 of the electrode structure 22 of the sheet-like probe 10 is transferred to the wafer 64. Each electrode 90 to be inspected is brought into pressure contact.

  In this state, each conductive portion 78 of the anisotropic conductive sheet 76 of the anisotropic conductive connector 70 is connected to the inspection electrode 72 of the inspection circuit board 68 and the back electrode portion 26 of the electrode structure 22 of the sheet-like probe 10. And compressed in the thickness direction.

  As a result, a conductive path is formed in the conductive portion 78 in the thickness direction, and the inspection target electrode 90 of the wafer 64 and the inspection electrode 72 of the inspection circuit board 68 are electrically connected. Thereafter, the wafer 86 is heated to a predetermined temperature by the heater 86 via the wafer mounting table 84 and the pressure plate 82, and in this state, each of the plurality of integrated circuits formed on the wafer 64 is subjected to electrical inspection. .

  According to this wafer inspection apparatus, even when the wafer 64 has a large area of, for example, a diameter of 8 inches or more and the pitch of the electrodes 90 to be inspected is extremely small, a good electrical connection state to the wafer 64 in the burn-in test. Can be maintained stably, and a required electrical inspection can be reliably executed for each of the plurality of integrated circuits on the wafer 64.

  In the present embodiment, the inspection electrodes of the probe card 66 are connected to the electrodes to be inspected of all integrated circuits formed on the wafer 64 and the electrical inspection is performed collectively. However, all of the inspection electrodes formed on the wafer 64 are performed. The inspection electrode of the probe card 66 may be connected to the inspection target electrodes 90 of a plurality of integrated circuits selected from the integrated circuit, and the inspection may be performed for each selected region.

  The number of integrated circuits to be selected is appropriately selected in consideration of the size of the wafer 64, the number of integrated circuits formed on the wafer 64, the number of electrodes 90 to be inspected of each integrated circuit, etc. There are 32, 64, and 128.

  In addition, the anisotropic conductive sheet 76 is formed with a conductive portion 78 for non-connection that is not electrically connected to the electrode 90 to be inspected, in addition to the conductive portion 78 formed according to the pattern corresponding to the pattern of the electrode 90 to be inspected. May be.

  The probe card 66 and the circuit device inspection apparatus according to the present invention are for inspecting circuits formed on semiconductor integrated circuit devices such as semiconductor chips, package LSIs such as BGA and CSP, MCMs, etc. in addition to wafer inspection. It is good also as a structure of.

1A and 1B are diagrams showing an embodiment of a sheet-like probe according to the present invention. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line XX in FIG. . FIG. 2 is an enlarged plan view showing a contact film of the sheet-like probe of FIG. FIG. 3 is a partial cross-sectional view taken along line XX of FIG. FIG. 4 is a plan view for explaining the shape of the metal frame plate of the sheet-like probe. FIG. 5 is a view showing another embodiment of the sheet-like probe of the present invention, FIG. 5 (a) is a plan view, and FIG. 5 (b) is a sectional view taken along line XX of FIG. 5 (a). It is. FIG. 6 is a view showing another embodiment of the sheet-like probe of the present invention, FIG. 6 (a) is a plan view, and FIG. 6 (b) is a sectional view taken along line XX of FIG. 6 (a). It is. 7 is a view showing another embodiment of the sheet-like probe of the present invention, FIG. 7 (a) is a plan view, and FIG. 7 (b) is a cross-sectional view taken along line XX of FIG. 7 (a). It is. FIG. 8 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 9 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 10 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 12 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 13 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 14 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 15 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 16 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe. FIG. 17 is a cross-sectional view illustrating a method for attaching a metal frame plate to a sheet-like probe. FIG. 18 is a photograph of the electrode structure of the sheet-like probe, and FIG. 18 (a) is a photograph for confirming the hollow shape portion of the short-circuit portion and the through-hole of the back electrode portion, FIG. 18 (b). These are the photograph figures for confirming the protrusion part of a surface electrode part. FIG. 19 is a cross-sectional view showing an embodiment of a circuit device inspection device of the present invention and a probe card used therein. 20 is a cross-sectional view showing each state before and after assembly in the probe card of FIG. FIG. 21 is a cross-sectional view showing the main configuration of the probe card of FIG. FIG. 22 is a cross-sectional view of a conventional sheet-like probe. FIG. 23 is a cross-sectional view schematically showing a conventional method for manufacturing a sheet-like probe. FIG. 24 is a schematic cross-sectional view for explaining a situation where an oxide film is formed on the electrode to be inspected on the wafer. FIG. 25 is a schematic cross-sectional view for explaining a state in which a conventional sheet-like probe is brought into contact with a test electrode of a wafer. FIG. 26 is a schematic cross-sectional view for explaining a state in which a conventional sheet-like probe is brought into contact with a test electrode of a wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Sheet-like probe 10A ... Laminated body 10B ... Laminated body 10C ... Laminated body 12 ... Through-hole 14 ... Metal frame board 16 ... Contact film 18 ... Support part 20 ... · Insulating layer 22 · · · electrode structure 24 · · · surface electrode portion 24a · · projection 24b · · plate-like portion 26 · · · back electrode portion 26H · · · through hole 28 · · · short-circuit portion 28H · · · hollow Shape part 32 ... Support member 34A ... Insulating sheet 36A ... Protection film 36K ... Pattern hole 38A ... Protection film 40A ... Resist film 40K ... Pattern hole 44 ... Recess 46A ... Resist film 46K ... Pattern hole 48 ... Metal layer 50A ... Resist film 50K ... Pattern hole 52A ... Metal film 52H ... Through hole 54A ... Insulating film 54H ... Through hole 56A ... Resist film 56K ... Turn hole 57A..Resist film 57K..Pattern hole 58A..Metal thin layer 60 ... Metal layer 62A..Resist film 64 ... Wafer 66 ... Probe card 68 ... Inspection circuit board 70. .. Anisotropic conductive connector 72 ... Electrode for inspection 74 ... Frame plate 76 ... Anisotropic conductive sheet 78 ... Conductive part 78a ... Conductive particle 80 ... Protruding part 81 ... Insulating part 82 ... Pressure plate 84 ... Wafer mounting table 86 ... Heater 88 ... Guide pin 90 ... Inspected electrode P ... Pitch of electrode structure R1 Diameter of part R2 .. Diameter of back electrode part R3 .. Diameter of short circuit part t1 .. Height t2 ..Width of projecting part t3 .. Width of plate-like part t4 .. Width of back electrode part H. Insulating layer thickness 100 ... sheet-like probe 102 ... electrode Structure 104 ... Insulating sheet 106 ... Support member 108 ... Front electrode portion 110 ... Back electrode portion 112 ... Short-circuit portion 200 ... Sheet-like probe 202 ... Frame plate forming metal Plate 204 ... Insulating layer forming resin sheet 206 ... Laminate 208 ... Through hole 210 ... Short-circuit portion 212 ... Surface electrode portion 214 ... Through hole 216 ... Metal frame plate 218 ... Back electrode part 220 ... Electrode structure 222 ... Insulating layer 224 ... Contact film 300 ... Wafer 302 ... Inspected electrode 304 ... Oxide film 400 ... Sheet probe 402... Surface electrode portion 404... Electrode structure

Claims (9)

An insulating layer;
A contact film provided with a plurality of electrode structures that are spaced apart from each other in the surface direction of the insulating layer and that extend through the thickness direction of the insulating layer;
Each of the electrode structures is
A surface electrode part exposed on the surface of the insulating layer and protruding from the surface of the insulating layer;
A back electrode portion exposed on the back surface of the insulating layer;
Continuing from the base end of the front surface electrode portion and extending through the insulating layer in the thickness direction, consisting of a short circuit portion connected to the back surface electrode portion,
The short-circuit portion has a hollow shape portion therein, and the back electrode portion has a through hole that is substantially the same diameter as the hollow shape portion of the short-circuit portion and communicates with the hollow shape portion of the short-circuit portion. A sheet-like probe characterized by being provided.   2. The sheet-like probe according to claim 1, wherein a conductive paste is packed inside the hollow shape portion of the short-circuit portion and inside the through-hole of the back electrode portion.   3. The sheet-like probe according to claim 1, wherein an outer diameter of the surface electrode portion is larger than an outer diameter of the short-circuit portion.   The sheet-like probe according to any one of claims 1 to 3, wherein an outer diameter of the back electrode portion is larger than an outer diameter of the short-circuit portion. A circuit board for inspection in which an inspection electrode corresponding to an electrode to be inspected of a circuit device to be inspected is formed;
An anisotropic conductive connector disposed on the inspection circuit board;
A probe card comprising: the sheet-like probe according to claim 1 disposed on the anisotropic conductive connector. An inspection device for a circuit device, comprising the probe card according to claim 5. An inspection of a wafer, wherein each integrated circuit of a wafer on which a plurality of integrated circuits are formed is electrically connected to a tester via the probe card according to claim 5 and an electrical inspection of each integrated circuit is performed. Method. Preparing a laminate in which a protective film is formed on each of the front and back surfaces of the insulating sheet;
Forming a recess in accordance with the pattern corresponding to the pattern of the electrode structure to be formed from the surface side of the laminate in the insulating sheet;
Forming a surface electrode portion in the electrode structure by depositing a metal in the recess;
Laminating an insulating film and a metal film in this order on the surface electrode part, and burying at least a part of the surface electrode part in the insulating film;
Forming a through hole according to a pattern corresponding to a pattern of an electrode structure to be formed in the metal film and the insulating film;
Conducting between the surface electrode portion and the metal film through the through-hole formed in the insulating film;
Forming a metal thin layer on the inner wall surface of the through hole and the upper surface of the metal film, and forming a short-circuit portion having a hollow-shaped portion inside the electrode structure to be formed;
Etching the metal film to form a back electrode portion of the electrode structure to be formed and having a through hole that is substantially the same diameter as the hollow shape portion of the short-circuit portion and communicates with the short-circuit portion. When,
A sheet-like probe manufacturing method comprising: Packing the conductive paste into the hollow portion of the short-circuit portion and the through-hole of the back electrode portion; and
The sheet-like probe manufacturing method according to claim 8, comprising: