TW200832732A - Roll-to-roll electroplating for photovoltaic film manufacturing - Google Patents
Roll-to-roll electroplating for photovoltaic film manufacturing Download PDFInfo
- Publication number
- TW200832732A TW200832732A TW096139256A TW96139256A TW200832732A TW 200832732 A TW200832732 A TW 200832732A TW 096139256 A TW096139256 A TW 096139256A TW 96139256 A TW96139256 A TW 96139256A TW 200832732 A TW200832732 A TW 200832732A
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- TW
- Taiwan
- Prior art keywords
- layer
- unit
- cleaning
- plating
- continuous flexible
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000010949 copper Substances 0.000 claims abstract description 102
- 239000002243 precursor Substances 0.000 claims abstract description 50
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 35
- 229910052738 indium Inorganic materials 0.000 claims abstract description 32
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 31
- 230000003750 conditioning effect Effects 0.000 claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 95
- 238000004140 cleaning Methods 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 54
- 238000000151 deposition Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 13
- 230000004913 activation Effects 0.000 claims description 10
- 229910052714 tellurium Inorganic materials 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 239000002250 absorbent Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 239000002105 nanoparticle Substances 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 238000006748 scratching Methods 0.000 claims 1
- 230000002393 scratching effect Effects 0.000 claims 1
- 230000026676 system process Effects 0.000 claims 1
- 239000011888 foil Substances 0.000 abstract description 55
- 239000006096 absorbing agent Substances 0.000 abstract description 22
- 230000001143 conditioned effect Effects 0.000 abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 158
- 239000000758 substrate Substances 0.000 description 78
- 239000011669 selenium Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 28
- 239000000126 substance Substances 0.000 description 24
- 238000004070 electrodeposition Methods 0.000 description 22
- 239000000243 solution Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 17
- 239000007789 gas Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000004804 winding Methods 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052762 osmium Inorganic materials 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000003637 steroidlike Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 235000015429 Mirabilis expansa Nutrition 0.000 description 1
- 244000294411 Mirabilis expansa Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001850 copernicium Inorganic materials 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011262 electrochemically active material Substances 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 235000013536 miso Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 201000008827 tuberculosis Diseases 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
- C25D7/0635—In radial cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86216406P | 2006-10-19 | 2006-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200832732A true TW200832732A (en) | 2008-08-01 |
Family
ID=39314859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096139256A TW200832732A (en) | 2006-10-19 | 2007-10-19 | Roll-to-roll electroplating for photovoltaic film manufacturing |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080093221A1 (ko) |
| EP (1) | EP2087151A4 (ko) |
| JP (1) | JP2010507909A (ko) |
| KR (1) | KR20090098962A (ko) |
| CN (1) | CN101583741B (ko) |
| TW (1) | TW200832732A (ko) |
| WO (1) | WO2008049103A2 (ko) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1919703B1 (en) | 2005-08-12 | 2013-04-24 | Modumetal, LLC | Compositionally modulated composite materials and methods for making the same |
| US7713773B2 (en) * | 2005-11-02 | 2010-05-11 | Solopower, Inc. | Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers |
| US20070227633A1 (en) * | 2006-04-04 | 2007-10-04 | Basol Bulent M | Composition control for roll-to-roll processed photovoltaic films |
| US7736913B2 (en) * | 2006-04-04 | 2010-06-15 | Solopower, Inc. | Composition control for photovoltaic thin film manufacturing |
| US8465589B1 (en) | 2009-02-05 | 2013-06-18 | Ascent Solar Technologies, Inc. | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors |
| US8648253B1 (en) | 2010-10-01 | 2014-02-11 | Ascent Solar Technologies, Inc. | Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers |
| US7968353B2 (en) * | 2008-04-15 | 2011-06-28 | Global Solar Energy, Inc. | Apparatus and methods for manufacturing thin-film solar cells |
| US8207012B2 (en) * | 2008-04-28 | 2012-06-26 | Solopower, Inc. | Method and apparatus for achieving low resistance contact to a metal based thin film solar cell |
| US20090266398A1 (en) * | 2008-04-28 | 2009-10-29 | Burak Metin | Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells |
| US20090266399A1 (en) * | 2008-04-28 | 2009-10-29 | Basol Bulent M | Metallic foil substrate and packaging technique for thin film solar cells and modules |
| US20130230933A1 (en) * | 2008-09-06 | 2013-09-05 | Soltrium Technology, Ltd. Shenzhen | Methods for fabricating thin film solar cells |
| US8318239B2 (en) * | 2008-11-17 | 2012-11-27 | Solopower, Inc. | Method and apparatus for detecting and passivating defects in thin film solar cells |
| US7979969B2 (en) | 2008-11-17 | 2011-07-19 | Solopower, Inc. | Method of detecting and passivating a defect in a solar cell |
| US8318240B2 (en) * | 2008-11-17 | 2012-11-27 | Solopower, Inc. | Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement |
| US20100200408A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Method and apparatus for the solution deposition of high quality oxide material |
| WO2010126699A2 (en) | 2009-04-29 | 2010-11-04 | Hunter Douglas Industries B.V. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
| BR122013014461B1 (pt) | 2009-06-08 | 2020-10-20 | Modumetal, Inc | revestimento de multicamadas resistente à corrosão em um substrato e método de eletrodeposição para produção de um revestimento de multicamada |
| FR2951022B1 (fr) * | 2009-10-07 | 2012-07-27 | Nexcis | Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique. |
| WO2011082179A1 (en) * | 2009-12-28 | 2011-07-07 | Global Solar Energy, Inc. | Apparatus and methods of mixing and depositing thin film photovoltaic compositions |
| WO2011142804A1 (en) * | 2010-05-10 | 2011-11-17 | The University Of Toledo | Flexible photovoltaic cells and modules having an improved adhesion characteristic |
| CN103038891A (zh) | 2010-05-26 | 2013-04-10 | 托莱多大学 | 具有光散射界面层的光伏结构及其制造方法 |
| US8304272B2 (en) | 2010-07-02 | 2012-11-06 | International Business Machines Corporation | Germanium photodetector |
| CN101974772B (zh) * | 2010-08-11 | 2012-06-27 | 中国科学院半导体研究所 | 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法 |
| US20120055612A1 (en) | 2010-09-02 | 2012-03-08 | International Business Machines Corporation | Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures |
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- 2007-10-19 US US11/875,784 patent/US20080093221A1/en not_active Abandoned
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- 2007-10-19 TW TW096139256A patent/TW200832732A/zh unknown
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- 2007-10-19 CN CN200780044723XA patent/CN101583741B/zh not_active Expired - Fee Related
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| US20080093221A1 (en) | 2008-04-24 |
| EP2087151A4 (en) | 2012-03-28 |
| KR20090098962A (ko) | 2009-09-18 |
| WO2008049103A3 (en) | 2008-07-03 |
| CN101583741A (zh) | 2009-11-18 |
| CN101583741B (zh) | 2011-09-28 |
| JP2010507909A (ja) | 2010-03-11 |
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