TW200820446A - Method of producing thin film transistor substrate - Google Patents
Method of producing thin film transistor substrate Download PDFInfo
- Publication number
- TW200820446A TW200820446A TW096131096A TW96131096A TW200820446A TW 200820446 A TW200820446 A TW 200820446A TW 096131096 A TW096131096 A TW 096131096A TW 96131096 A TW96131096 A TW 96131096A TW 200820446 A TW200820446 A TW 200820446A
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction
- pattern
- electrode
- conductive layer
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
Landscapes
- Thin Film Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060101428A KR20080035150A (ko) | 2006-10-18 | 2006-10-18 | 박막 트랜지스터 기판의 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200820446A true TW200820446A (en) | 2008-05-01 |
Family
ID=38941885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096131096A TW200820446A (en) | 2006-10-18 | 2007-08-22 | Method of producing thin film transistor substrate |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080093334A1 (https=) |
| EP (1) | EP1914802A2 (https=) |
| JP (1) | JP2008103658A (https=) |
| KR (1) | KR20080035150A (https=) |
| CN (1) | CN101165882A (https=) |
| TW (1) | TW200820446A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010026975A1 (ja) | 2008-09-02 | 2010-03-11 | 独立行政法人産業技術総合研究所 | 非晶質アルミニウムケイ酸塩の製造方法、及びその方法により得られた非晶質アルミニウムケイ酸塩、並びにそれを用いた吸着剤 |
| KR101682078B1 (ko) | 2010-07-30 | 2016-12-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
| JP5836846B2 (ja) * | 2011-03-11 | 2015-12-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| KR102030797B1 (ko) * | 2012-03-30 | 2019-11-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 제조 방법 |
| CN107895713B (zh) * | 2017-11-30 | 2020-05-05 | 深圳市华星光电半导体显示技术有限公司 | Tft基板制作方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3191745B2 (ja) * | 1997-04-23 | 2001-07-23 | 日本電気株式会社 | 薄膜トランジスタ素子及びその製造方法 |
| US7479205B2 (en) * | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US8148895B2 (en) * | 2004-10-01 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| KR100614323B1 (ko) * | 2004-12-30 | 2006-08-21 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
-
2006
- 2006-10-18 KR KR1020060101428A patent/KR20080035150A/ko not_active Withdrawn
-
2007
- 2007-02-26 JP JP2007044999A patent/JP2008103658A/ja not_active Withdrawn
- 2007-08-16 EP EP07016072A patent/EP1914802A2/en not_active Withdrawn
- 2007-08-22 TW TW096131096A patent/TW200820446A/zh unknown
- 2007-10-17 US US11/874,098 patent/US20080093334A1/en not_active Abandoned
- 2007-10-18 CN CNA2007101671041A patent/CN101165882A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN101165882A (zh) | 2008-04-23 |
| EP1914802A2 (en) | 2008-04-23 |
| US20080093334A1 (en) | 2008-04-24 |
| JP2008103658A (ja) | 2008-05-01 |
| KR20080035150A (ko) | 2008-04-23 |
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