TW200816859A - Methods of manufacturing optical device and resin-sealed light-emitting device, optical device, resin-sealed light-emitting device and flat lighting device - Google Patents

Methods of manufacturing optical device and resin-sealed light-emitting device, optical device, resin-sealed light-emitting device and flat lighting device Download PDF

Info

Publication number
TW200816859A
TW200816859A TW096129853A TW96129853A TW200816859A TW 200816859 A TW200816859 A TW 200816859A TW 096129853 A TW096129853 A TW 096129853A TW 96129853 A TW96129853 A TW 96129853A TW 200816859 A TW200816859 A TW 200816859A
Authority
TW
Taiwan
Prior art keywords
resin
light
plate
optical
emitting
Prior art date
Application number
TW096129853A
Other languages
English (en)
Chinese (zh)
Inventor
Masayuki Shijo
Shunji Watanabe
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200816859A publication Critical patent/TW200816859A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW096129853A 2006-09-20 2007-08-13 Methods of manufacturing optical device and resin-sealed light-emitting device, optical device, resin-sealed light-emitting device and flat lighting device TW200816859A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006254286 2006-09-20
JP2007000627 2007-01-05

Publications (1)

Publication Number Publication Date
TW200816859A true TW200816859A (en) 2008-04-01

Family

ID=38917646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096129853A TW200816859A (en) 2006-09-20 2007-08-13 Methods of manufacturing optical device and resin-sealed light-emitting device, optical device, resin-sealed light-emitting device and flat lighting device

Country Status (6)

Country Link
US (1) US7915801B2 (cg-RX-API-DMAC10.html)
JP (1) JP2010504626A (cg-RX-API-DMAC10.html)
KR (1) KR101308774B1 (cg-RX-API-DMAC10.html)
CN (1) CN101528447B (cg-RX-API-DMAC10.html)
TW (1) TW200816859A (cg-RX-API-DMAC10.html)
WO (1) WO2008035749A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986005B1 (ko) 2008-11-27 2010-10-06 삼성전기주식회사 웨이퍼 렌즈 제작 방법
US9046615B2 (en) * 2011-04-25 2015-06-02 Hitachi Metals, Ltd. Production method of scintillator array
JP6114987B2 (ja) * 2012-12-26 2017-04-19 唐沢 伸 蓄光表示部材の製造方法
JP6374723B2 (ja) * 2014-07-25 2018-08-15 スタンレー電気株式会社 半導体発光装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4154506A (en) * 1976-08-12 1979-05-15 Izon Corporation Projection lens plate for microfiche
JPS5794706A (en) * 1980-12-04 1982-06-12 Ricoh Co Ltd Plate-like lens
JPS5945401A (ja) * 1982-09-08 1984-03-14 Oki Electric Ind Co Ltd 多連レンズ
JPS61237485A (ja) * 1985-04-12 1986-10-22 Takiron Co Ltd 発光表示体の製法
JPH0555636A (ja) * 1991-08-22 1993-03-05 Sanken Electric Co Ltd 半導体発光装置の製造方法
EP0632511A3 (en) * 1993-06-29 1996-11-27 Mitsubishi Cable Ind Ltd Light emitting diode assembly and manufacturing method.
JP2739279B2 (ja) * 1993-06-30 1998-04-15 三菱電線工業株式会社 基板に実装された電子部品のモールド方法
JP3432113B2 (ja) * 1997-07-07 2003-08-04 シャープ株式会社 光半導体装置
JP2001223285A (ja) * 2000-02-09 2001-08-17 Rohm Co Ltd チップ型半導体装置及びその製造方法
JP3614776B2 (ja) 2000-12-19 2005-01-26 シャープ株式会社 チップ部品型ｌｅｄとその製造方法
JP2002252375A (ja) * 2001-02-23 2002-09-06 Kanegafuchi Chem Ind Co Ltd 発光ダイオード及びその製造方法
US6639356B2 (en) * 2002-03-28 2003-10-28 Unity Opto Technology Co., Ltd. Heat dissipating light emitting diode
US6753661B2 (en) 2002-06-17 2004-06-22 Koninklijke Philips Electronics N.V. LED-based white-light backlighting for electronic displays
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP4307090B2 (ja) * 2003-01-27 2009-08-05 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP4073341B2 (ja) 2003-03-14 2008-04-09 三洋電機株式会社 多室形空気調和装置およびその制御方法
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
JP3875247B2 (ja) 2004-09-27 2007-01-31 株式会社エンプラス 発光装置、面光源装置、表示装置及び光束制御部材
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US20060105483A1 (en) * 2004-11-18 2006-05-18 Leatherdale Catherine A Encapsulated light emitting diodes and methods of making
JP4929595B2 (ja) * 2005-01-18 2012-05-09 三菱瓦斯化学株式会社 封止樹脂用組成物
JP2006210624A (ja) * 2005-01-27 2006-08-10 Toshiba Lighting & Technology Corp 発光装置

Also Published As

Publication number Publication date
CN101528447A (zh) 2009-09-09
CN101528447B (zh) 2013-07-03
US20080067911A1 (en) 2008-03-20
WO2008035749A1 (en) 2008-03-27
US7915801B2 (en) 2011-03-29
JP2010504626A (ja) 2010-02-12
KR101308774B1 (ko) 2013-09-17
KR20090056988A (ko) 2009-06-03

Similar Documents

Publication Publication Date Title
Lee et al. Micro light‐emitting diodes for display and flexible biomedical applications
Verma et al. FRET based biosensor: principle applications recent advances and challenges
Drbohlavova et al. Quantum dots—characterization, preparation and usage in biological systems
Wang et al. A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes
Hu et al. Study on the optical properties of conformal coating light-emitting diode by Monte Carlo simulation
US20100011637A1 (en) Displaying device and method thereof
CN110739260B (zh) 一种转移基板和转移方法
Li et al. Progress of InGaN-based red micro-light emitting diodes
CN101438426A (zh) 带有会聚光学元件的led封装
Chen et al. Organosilicon fluorescent materials
Maraj et al. Reliability analysis of AlGaN-based deep UV-LEDs
Skurlov et al. Improved one-and multiple-photon excited photoluminescence from cd2+-doped cspbbr3 perovskite ncs
Fan et al. A comprehensive review of group-III nitride light-emitting diodes: from millimeter to micro-nanometer scales
Li et al. Nanoscale characterization of V-defect in InGaN/GaN QWs LEDs using near-field scanning optical microscopy
Sypniewska et al. Organic LEDs based on bis (8-hydroxyquinoline) zinc derivatives with a styryl group
Lee et al. Substantial improvement of color-rendering properties of conventional white LEDs using remote-type red quantum-dot caps
Li et al. Realizing single chip white light InGaN LED via dual-wavelength multiple quantum wells
Fang et al. Advancements in micro-LED performance through nanomaterials and nanostructures: a review
Yang et al. Fabrication of GaN-based flexible VLEDs with double-side light emitting
Qian et al. High-efficiency vertical-chip micro-light-emitting diodes via p-GaN optimization and surface passivation
Hong et al. Structural optimization of vertically-stacked white LEDs with a yellow phosphor plate and a red quantum-dot film
ATE524836T1 (de) Herstellungsverfahren einer halbleiter- dünnschicht aus gainn
CN101528447B (zh) 光学元件和树脂密封发光元件的制造方法及所制得的产品
Zhang et al. Wafer-scale semipolar micro-pyramid lighting-emitting diode array
Tan et al. Light extraction enhancement of InGaN based micro light-emitting diodes with concave-convex circular composite structure sidewall