TW200802981A - III-nitride semiconductor light emitting device and method for manufacturing the same - Google Patents

III-nitride semiconductor light emitting device and method for manufacturing the same

Info

Publication number
TW200802981A
TW200802981A TW096113427A TW96113427A TW200802981A TW 200802981 A TW200802981 A TW 200802981A TW 096113427 A TW096113427 A TW 096113427A TW 96113427 A TW96113427 A TW 96113427A TW 200802981 A TW200802981 A TW 200802981A
Authority
TW
Taiwan
Prior art keywords
iii
light emitting
emitting device
semiconductor light
manufacturing
Prior art date
Application number
TW096113427A
Other languages
English (en)
Inventor
Chang-Tae Kim
Hyun-Min Jung
Eui-Gue Jeun
Hyun-Suk Kim
Gi-Yeon Nam
Byeong-Kyun Choi
Original Assignee
Epivalley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060035149A external-priority patent/KR100743470B1/ko
Priority claimed from KR1020060083404A external-priority patent/KR101004711B1/ko
Application filed by Epivalley Co Ltd filed Critical Epivalley Co Ltd
Publication of TW200802981A publication Critical patent/TW200802981A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW096113427A 2006-04-18 2007-04-17 III-nitride semiconductor light emitting device and method for manufacturing the same TW200802981A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060035149A KR100743470B1 (ko) 2006-04-18 2006-04-18 3족 질화물 반도체 발광소자 및 그 제조 방법
KR1020060083404A KR101004711B1 (ko) 2006-08-31 2006-08-31 3족 질화물 반도체 발광소자 및 그 제조 방법

Publications (1)

Publication Number Publication Date
TW200802981A true TW200802981A (en) 2008-01-01

Family

ID=38609661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113427A TW200802981A (en) 2006-04-18 2007-04-17 III-nitride semiconductor light emitting device and method for manufacturing the same

Country Status (5)

Country Link
US (1) US20090020771A1 (zh)
EP (1) EP2008314A4 (zh)
JP (1) JP2009528694A (zh)
TW (1) TW200802981A (zh)
WO (1) WO2007119919A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080315240A1 (en) * 2006-08-31 2008-12-25 Epivalley Co., Ltd. III-Nitride Semiconductor light Emitting Device
KR20110077707A (ko) * 2009-12-30 2011-07-07 엘지디스플레이 주식회사 수직형 발광 다이오드 및 그 제조방법
JP6570910B2 (ja) * 2015-07-24 2019-09-04 株式会社ディスコ ウエーハの加工方法
US11119261B1 (en) 2017-11-01 2021-09-14 Akonia Holographics Llc Coherent skew mirrors

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
EP0444630B1 (en) * 1990-02-28 1997-05-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
KR930000824B1 (ko) * 1990-05-08 1993-02-05 삼성전자 주식회사 광전집적회로 소자 및 그 제조방법
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
EP0622858B2 (en) * 1993-04-28 2004-09-29 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device and method of producing the same
JPH08255926A (ja) * 1995-03-16 1996-10-01 Rohm Co Ltd 半導体発光素子およびその製法
US5834894A (en) * 1995-09-14 1998-11-10 Casio Computer Co., Ltd. Carrier injection type organic electro-luminescent device which emits light in response to an application of a voltage
JPH10173236A (ja) * 1996-12-13 1998-06-26 Sharp Corp 窒化ガリウム系化合物半導体発光素子の製造方法
DE69839300T2 (de) * 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
JP2001044491A (ja) * 1999-07-13 2001-02-16 Korai Kagi Kofun Yugenkoshi Ｌｅｄ及びその製造方法
JP2002134658A (ja) * 2000-10-24 2002-05-10 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
US6794684B2 (en) * 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
JPWO2003044872A1 (ja) * 2001-11-19 2005-03-24 三洋電機株式会社 化合物半導体発光素子
JP2004297095A (ja) * 2001-11-19 2004-10-21 Sanyo Electric Co Ltd 化合物半導体発光素子の製造方法
JP2004221372A (ja) * 2003-01-16 2004-08-05 Seiko Epson Corp 半導体装置、半導体モジュール、電子機器、半導体装置の製造方法および半導体モジュールの製造方法
US7601553B2 (en) * 2003-07-18 2009-10-13 Epivalley Co., Ltd. Method of manufacturing a gallium nitride semiconductor light emitting device
KR100448352B1 (ko) * 2003-11-28 2004-09-10 삼성전기주식회사 ＧａＮ 기반 질화막의 형성방법
KR100593891B1 (ko) * 2003-12-26 2006-06-28 삼성전기주식회사 플립칩용 질화물 반도체 발광소자 및 그 제조방법
KR100648136B1 (ko) * 2004-03-03 2006-11-24 주식회사 이츠웰 발광 다이오드 및 그 제조 방법

Also Published As

Publication number Publication date
US20090020771A1 (en) 2009-01-22
JP2009528694A (ja) 2009-08-06
EP2008314A4 (en) 2009-12-30
WO2007119919A1 (en) 2007-10-25
EP2008314A1 (en) 2008-12-31

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