TW200743217A - Liquid crystal display device and fabricating method thereof - Google Patents

Liquid crystal display device and fabricating method thereof

Info

Publication number
TW200743217A
TW200743217A TW095149589A TW95149589A TW200743217A TW 200743217 A TW200743217 A TW 200743217A TW 095149589 A TW095149589 A TW 095149589A TW 95149589 A TW95149589 A TW 95149589A TW 200743217 A TW200743217 A TW 200743217A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
liquid crystal
display device
crystal display
channel portion
Prior art date
Application number
TW095149589A
Other languages
English (en)
Other versions
TWI330890B (en
Inventor
Joon-Young Yang
Jae-Young Oh
Soo-Pool Kim
Original Assignee
Lg Philips Lcd Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Philips Lcd Co Ltd filed Critical Lg Philips Lcd Co Ltd
Publication of TW200743217A publication Critical patent/TW200743217A/zh
Application granted granted Critical
Publication of TWI330890B publication Critical patent/TWI330890B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095149589A 2006-05-03 2006-12-28 Liquid crystal display device and fabricating method thereof TWI330890B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060040062A KR101226974B1 (ko) 2006-05-03 2006-05-03 액정표시장치용 어레이 기판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200743217A true TW200743217A (en) 2007-11-16
TWI330890B TWI330890B (en) 2010-09-21

Family

ID=37546130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149589A TWI330890B (en) 2006-05-03 2006-12-28 Liquid crystal display device and fabricating method thereof

Country Status (6)

Country Link
US (2) US7727824B2 (zh)
JP (1) JP4850057B2 (zh)
KR (1) KR101226974B1 (zh)
CN (1) CN100538483C (zh)
GB (1) GB2439586B (zh)
TW (1) TWI330890B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427998B (zh) * 2010-01-11 2014-02-21 Htc Corp 無線通訊系統之載波指示方法以及相關通訊裝置

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KR100673020B1 (ko) * 2005-12-20 2007-01-24 삼성전자주식회사 전계효과 소오스/드레인 영역을 가지는 반도체 장치
JP2008147516A (ja) * 2006-12-12 2008-06-26 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法
KR101294235B1 (ko) * 2008-02-15 2013-08-07 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR101282897B1 (ko) * 2008-07-08 2013-07-05 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터 및 그 제조방법
BRPI0921984A2 (pt) * 2008-11-20 2016-01-05 Sharp Kk camada semicondutora e método para fabricar a mesma
JP5182176B2 (ja) * 2009-03-18 2013-04-10 セイコーエプソン株式会社 表示装置および電子機器
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101636998B1 (ko) * 2010-02-12 2016-07-08 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
US9190522B2 (en) * 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9035315B2 (en) * 2010-04-30 2015-05-19 Sharp Kabushiki Kaisha Semiconductor device, display device, and method for manufacturing semiconductor device
US8853796B2 (en) * 2011-05-19 2014-10-07 GLOBALFOUNDIERS Singapore Pte. Ltd. High-K metal gate device
TWI445181B (zh) 2012-02-08 2014-07-11 E Ink Holdings Inc 薄膜電晶體
KR102086626B1 (ko) * 2012-11-23 2020-03-11 한국전자통신연구원 자기 정렬 박막 트랜지스터 및 그 제조 방법
CN103887165B (zh) * 2014-03-07 2016-09-07 京东方科技集团股份有限公司 一种膜层的干法刻蚀方法
KR101559055B1 (ko) * 2014-07-22 2015-10-12 엘지디스플레이 주식회사 유기발광 표시패널 및 그 제조방법
KR102300039B1 (ko) * 2014-08-04 2021-09-10 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 표시 장치의 제조 방법
CN105789052A (zh) * 2015-12-28 2016-07-20 昆山国显光电有限公司 一种低温多晶硅薄膜晶体管的制备方法及产品
CN105702687A (zh) * 2016-04-13 2016-06-22 武汉华星光电技术有限公司 Tft基板及其制作方法
JP6677114B2 (ja) * 2016-07-19 2020-04-08 豊田合成株式会社 半導体装置およびその製造方法

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JP3474286B2 (ja) * 1994-10-26 2003-12-08 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR100257080B1 (ko) * 1997-09-26 2000-05-15 김영환 반도체소자의제조방법
JPH11238887A (ja) 1998-02-20 1999-08-31 Toshiba Corp 薄膜トランジスタ
JP2000031493A (ja) * 1998-07-16 2000-01-28 Fujitsu Ltd 薄膜トランジスタ及びその製造方法
JP2000077665A (ja) * 1998-08-27 2000-03-14 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
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JP4017886B2 (ja) 2002-02-28 2007-12-05 シャープ株式会社 薄膜トランジスタ装置及びその製造方法
JP2003298059A (ja) * 2002-03-29 2003-10-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタ
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JP4932133B2 (ja) * 2002-06-06 2012-05-16 日本電気株式会社 積層膜パターンの形成方法
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
JP2005057042A (ja) * 2003-08-04 2005-03-03 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法ならびに液晶表示装置およびその製造方法
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KR100900404B1 (ko) * 2003-12-22 2009-06-02 엘지디스플레이 주식회사 액정표시소자의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427998B (zh) * 2010-01-11 2014-02-21 Htc Corp 無線通訊系統之載波指示方法以及相關通訊裝置

Also Published As

Publication number Publication date
CN101067701A (zh) 2007-11-07
US20070257289A1 (en) 2007-11-08
GB2439586B (en) 2008-12-10
US20100200862A1 (en) 2010-08-12
US7727824B2 (en) 2010-06-01
GB0621464D0 (en) 2006-12-06
KR101226974B1 (ko) 2013-01-28
TWI330890B (en) 2010-09-21
US7927931B2 (en) 2011-04-19
CN100538483C (zh) 2009-09-09
KR20070107493A (ko) 2007-11-07
JP4850057B2 (ja) 2012-01-11
GB2439586A (en) 2008-01-02
JP2007298947A (ja) 2007-11-15

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