TW200741960A - Seed layers, cap layers, and thin films and methods of making thereof - Google Patents

Seed layers, cap layers, and thin films and methods of making thereof

Info

Publication number
TW200741960A
TW200741960A TW095117186A TW95117186A TW200741960A TW 200741960 A TW200741960 A TW 200741960A TW 095117186 A TW095117186 A TW 095117186A TW 95117186 A TW95117186 A TW 95117186A TW 200741960 A TW200741960 A TW 200741960A
Authority
TW
Taiwan
Prior art keywords
layers
making
methods
layer
thin films
Prior art date
Application number
TW095117186A
Other languages
English (en)
Inventor
hai-xia Dai
Michael Spaid
Theo Nikiforov
Hash Pakbaz
Original Assignee
Cambrios Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambrios Technologies Corp filed Critical Cambrios Technologies Corp
Publication of TW200741960A publication Critical patent/TW200741960A/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1803Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837Multistep pretreatment
    • C23C18/1844Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48Coating with alloys
    • C23C18/50Coating with alloys with alloys based on iron, cobalt or nickel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/7685Barrier, adhesion or liner layers the layer covering a conductive structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864Thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76867Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76868Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Peptides Or Proteins (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
TW095117186A 2005-05-13 2006-05-15 Seed layers, cap layers, and thin films and methods of making thereof TW200741960A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68049105P 2005-05-13 2005-05-13
US75201905P 2005-12-21 2005-12-21

Publications (1)

Publication Number Publication Date
TW200741960A true TW200741960A (en) 2007-11-01

Family

ID=38904823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095117186A TW200741960A (en) 2005-05-13 2006-05-15 Seed layers, cap layers, and thin films and methods of making thereof

Country Status (3)

Country Link
US (2) US7695981B2 (zh)
TW (1) TW200741960A (zh)
WO (1) WO2008013516A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104651811A (zh) * 2013-10-30 2015-05-27 罗门哈斯电子材料有限公司 用于化学镀的催化剂溶液
TWI821416B (zh) * 2018-09-27 2023-11-11 台灣積體電路製造股份有限公司 半導體裝置的形成方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004099467A1 (de) * 2003-05-09 2004-11-18 Basf Aktiengesellschaft Zusammensetzungen zur stromlosen abscheidung ternärer materialien für die halbleiterindustrie
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7695981B2 (en) * 2005-05-13 2010-04-13 Siluria Technologies, Inc. Seed layers, cap layers, and thin films and methods of making thereof
US8232621B2 (en) * 2006-07-28 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8278216B1 (en) 2006-08-18 2012-10-02 Novellus Systems, Inc. Selective capping of copper
JP2010507263A (ja) * 2006-10-17 2010-03-04 エントン インコーポレイテッド 超小型電子デバイスの製造におけるフィチャーを埋め込むための銅堆積
JP2008198703A (ja) * 2007-02-09 2008-08-28 Nec Electronics Corp 半導体装置の製造方法
CN101611130B (zh) * 2007-02-14 2011-05-18 安万托特性材料股份有限公司 用于去除蚀刻残余物以过氧化物活化的金属氧酸盐为基础的制剂
US20080236619A1 (en) * 2007-04-02 2008-10-02 Enthone Inc. Cobalt capping surface preparation in microelectronics manufacture
KR100841170B1 (ko) * 2007-04-26 2008-06-24 삼성전자주식회사 저저항 금속 배선 형성방법, 금속 배선 구조 및 이를이용하는 표시장치
WO2008157612A1 (en) * 2007-06-21 2008-12-24 Enthone Inc. Codeposition of copper nanoparticles in through silicon via filling
US8039379B1 (en) 2007-07-02 2011-10-18 Novellus Systems, Inc. Nanoparticle cap layer
US7994640B1 (en) * 2007-07-02 2011-08-09 Novellus Systems, Inc. Nanoparticle cap layer
US20090127711A1 (en) * 2007-11-15 2009-05-21 International Business Machines Corporation Interconnect structure and method of making same
KR100916649B1 (ko) * 2007-11-26 2009-09-08 삼성전기주식회사 인쇄회로기판의 제조방법
US8420537B2 (en) * 2008-05-28 2013-04-16 International Business Machines Corporation Stress locking layer for reliable metallization
US8382970B2 (en) * 2008-08-05 2013-02-26 Xerox Corporation Metallization process for making fuser members
FR2935713B1 (fr) * 2008-09-08 2010-12-10 Alchimer Procede de reparation de couches barrieres a la diffusion du cuivre sur substrat solide semi-conducteur ; kit de reparation pour la mise en oeuvre de ce procede
US8237191B2 (en) * 2009-08-11 2012-08-07 International Business Machines Corporation Heterojunction bipolar transistors and methods of manufacture
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US20110059148A1 (en) * 2009-09-07 2011-03-10 National Chiao Tung University Flexible Drug Delivery Chip, its Fabrication Method and Uses Thereof
US10494720B2 (en) 2011-02-28 2019-12-03 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method
CN103430241B (zh) 2011-02-28 2017-08-04 无限科技全球公司 金属纳米纤维油墨、实质上透明的导体、及其制造方法
KR101182155B1 (ko) 2011-05-20 2012-09-12 인천대학교 산학협력단 반도체 장치 및 금속박막 형성방법
US8564132B2 (en) 2011-08-17 2013-10-22 International Business Machines Corporation Tungsten metallization: structure and fabrication of same
JP6360276B2 (ja) * 2012-03-08 2018-07-18 東京エレクトロン株式会社 半導体装置、半導体装置の製造方法、半導体製造装置
US8517769B1 (en) * 2012-03-16 2013-08-27 Globalfoundries Inc. Methods of forming copper-based conductive structures on an integrated circuit device
US8673766B2 (en) 2012-05-21 2014-03-18 Globalfoundries Inc. Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
CN103579254B (zh) * 2012-08-09 2019-04-26 香港城市大学 金属纳米粒子单层
US9293571B2 (en) * 2012-08-09 2016-03-22 City University Of Hong Kong Metal nanoparticle monolayer
US20140072706A1 (en) * 2012-09-11 2014-03-13 Ernest Long Direct Electroless Palladium Plating on Copper
US9059255B2 (en) * 2013-03-01 2015-06-16 Globalfoundries Inc. Methods of forming non-continuous conductive layers for conductive structures on an integrated circuit product
US9406614B2 (en) * 2013-03-08 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Material and process for copper barrier layer
FR3009210B1 (fr) * 2013-07-30 2017-01-13 Commissariat Energie Atomique Procede de realisation d'un revetement metallique sur une surface
US9847289B2 (en) * 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9263327B2 (en) * 2014-06-20 2016-02-16 Globalfoundries Inc. Minimizing void formation in semiconductor vias and trenches
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
US9865673B2 (en) 2015-03-24 2018-01-09 International Business Machines Corporation High resistivity soft magnetic material for miniaturized power converter
US9960240B2 (en) 2015-10-21 2018-05-01 International Business Machines Corporation Low resistance contact structures for trench structures
US10304773B2 (en) 2015-10-21 2019-05-28 International Business Machines Corporation Low resistance contact structures including a copper fill for trench structures
US9955590B2 (en) * 2015-10-21 2018-04-24 Advanced Semiconductor Engineering, Inc. Redistribution layer structure, semiconductor substrate structure, semiconductor package structure, chip structure, and method of manufacturing the same
US11198639B2 (en) * 2016-06-13 2021-12-14 Corning Incorporated Multicolored photosensitive glass-based parts and methods of manufacture
US10867843B2 (en) * 2016-12-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabrication semiconductor device
US10692830B2 (en) * 2017-10-05 2020-06-23 Texas Instruments Incorporated Multilayers of nickel alloys as diffusion barrier layers
WO2020033632A2 (en) * 2018-08-08 2020-02-13 Kuprion Inc. Electronic assemblies employing copper in multiple locations
WO2020085137A1 (ja) * 2018-10-22 2020-04-30 Dic株式会社 積層体、及び、積層体の製造方法
WO2021060037A1 (ja) * 2019-09-25 2021-04-01 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置
US20230024544A1 (en) * 2021-07-20 2023-01-26 Changxin Memory Technologies, Inc. Semiconductor structure, method of forming semiconductor structure, and memory
CN114113242B (zh) * 2021-12-07 2024-10-29 中国科学院苏州纳米技术与纳米仿生研究所 多孔三维微柱阵列材料、其制备方法及应用
CN117512716B (zh) * 2024-01-04 2024-03-22 江苏苏大特种化学试剂有限公司 一种绿色可持续型无氰镀金镀液的制备及其电镀方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5560790A (en) 1989-04-24 1990-11-16 Duke University Inhibitors of agonist-specific desensitization
US6017696A (en) * 1993-11-01 2000-01-25 Nanogen, Inc. Methods for electronic stringency control for molecular biological analysis and diagnostics
US5891513A (en) * 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US6361944B1 (en) 1996-07-29 2002-03-26 Nanosphere, Inc. Nanoparticles having oligonucleotides attached thereto and uses therefor
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6461675B2 (en) * 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
US6277740B1 (en) 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6780765B2 (en) 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
DE19855421C2 (de) * 1998-11-02 2001-09-20 Alcove Surfaces Gmbh Implantat
US6235540B1 (en) 1999-03-30 2001-05-22 Coulter International Corp. Semiconductor nanoparticles for analysis of blood cell populations and methods of making same
US6323128B1 (en) * 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
US6174812B1 (en) * 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
JP4751496B2 (ja) 1999-10-21 2011-08-17 株式会社アルバック (Cu−C)シード層の形成法
JP2001355074A (ja) * 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US6413792B1 (en) * 2000-04-24 2002-07-02 Eagle Research Development, Llc Ultra-fast nucleic acid sequencing device and a method for making and using the same
WO2002001647A1 (en) * 2000-06-23 2002-01-03 The United States Of America, As Represented By The Secretary Of The Navy Microelectronic device and method for label-free detection and quantification of biological and chemical molecules
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
DE10113550A1 (de) * 2001-03-20 2002-10-02 Infineon Technologies Ag Verfahren zum Erfassen von makromolekularen Biopolymeren mittels einer Elektrodenanordnung
US20030148380A1 (en) * 2001-06-05 2003-08-07 Belcher Angela M. Molecular recognition of materials
US20050164515A9 (en) * 2001-06-05 2005-07-28 Belcher Angela M. Biological control of nanoparticle nucleation, shape and crystal phase
US20030113714A1 (en) 2001-09-28 2003-06-19 Belcher Angela M. Biological control of nanoparticles
US20030073104A1 (en) * 2001-10-02 2003-04-17 Belcher Angela M. Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
US6747472B2 (en) * 2002-01-18 2004-06-08 International Business Machines Corporation Temporary device attach structure for test and burn in of microjoint interconnects and method for fabricating the same
US6805904B2 (en) * 2002-02-20 2004-10-19 International Business Machines Corporation Process of forming a multilayer nanoparticle-containing thin film self-assembly
US6821324B2 (en) 2002-06-19 2004-11-23 Ramot At Tel-Aviv University Ltd. Cobalt tungsten phosphorus electroless deposition process and materials
US7442756B2 (en) * 2002-06-20 2008-10-28 Infineon Technologies Ag Polymer for sealing porous materials during chip production
JP2006517186A (ja) * 2002-09-04 2006-07-20 ボード オブ リージェンツ ユニバーシティ オブ テキサス システム 二機能性の生体材料の組成物、方法、および使用
US20050064508A1 (en) * 2003-09-22 2005-03-24 Semzyme Peptide mediated synthesis of metallic and magnetic materials
US20040171139A1 (en) * 2002-09-24 2004-09-02 Belcher Angela M. Fabricated biofilm storage device
US6897151B2 (en) 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
US6887297B2 (en) * 2002-11-08 2005-05-03 Wayne State University Copper nanocrystals and methods of producing same
US20040108217A1 (en) * 2002-12-05 2004-06-10 Dubin Valery M. Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby
US6797312B2 (en) * 2003-01-21 2004-09-28 Mattson Technology, Inc. Electroless plating solution and process
FR2851258B1 (fr) * 2003-02-17 2007-03-30 Commissariat Energie Atomique Procede de revetement d'une surface, fabrication d'interconnexion en microelectronique utilisant ce procede, et circuits integres
US6902605B2 (en) * 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
US20050164371A1 (en) * 2003-03-28 2005-07-28 Fujitsu Limited Cavity electrode structure, and sensor and protein detection device using the same
US7238610B2 (en) * 2003-03-31 2007-07-03 Intel Corporation Method and apparatus for selective deposition
US6887776B2 (en) 2003-04-11 2005-05-03 Applied Materials, Inc. Methods to form metal lines using selective electrochemical deposition
US20040207093A1 (en) * 2003-04-17 2004-10-21 Sey-Shing Sun Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects
US6927113B1 (en) * 2003-05-23 2005-08-09 Advanced Micro Devices Semiconductor component and method of manufacture
TWI221667B (en) 2003-05-29 2004-10-01 Advanced Semiconductor Eng Substrate and process for fabricating the same
US7332321B2 (en) * 2003-10-15 2008-02-19 Board Of Regents, The University Of Texas System Viral fibers
KR20060109904A (ko) * 2003-10-15 2006-10-23 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 전자 공학적, 광학적, 자기적, 반도체 및 생물 공학적용도의 지지체로서의 다기능성 생체 재료
WO2005038084A2 (en) 2003-10-17 2005-04-28 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US7005752B2 (en) * 2003-10-20 2006-02-28 Texas Instruments Incorporated Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion
US7923109B2 (en) 2004-01-05 2011-04-12 Board Of Regents, The University Of Texas System Inorganic nanowires
US7358113B2 (en) * 2004-01-28 2008-04-15 Zettacore, Inc. Processing systems and methods for molecular memory
CA2554209A1 (en) * 2004-02-05 2005-10-27 Massachusetts Institute Of Technology Cell display libraries
US20050245059A1 (en) * 2004-04-30 2005-11-03 Yuan Yuan Method for making an interconnect pad
US7015150B2 (en) * 2004-05-26 2006-03-21 International Business Machines Corporation Exposed pore sealing post patterning
JP2006093357A (ja) 2004-09-22 2006-04-06 Ebara Corp 半導体装置及びその製造方法、並びに処理液
JP2006091660A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd 機器およびカメラ
US7332193B2 (en) 2004-10-18 2008-02-19 Enthone, Inc. Cobalt and nickel electroless plating in microelectronic devices
US7303989B2 (en) * 2004-11-22 2007-12-04 Intel Corporation Using zeolites to improve the mechanical strength of low-k interlayer dielectrics
US7217648B2 (en) * 2004-12-22 2007-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Post-ESL porogen burn-out for copper ELK integration
US7695981B2 (en) * 2005-05-13 2010-04-13 Siluria Technologies, Inc. Seed layers, cap layers, and thin films and methods of making thereof
US20060280860A1 (en) 2005-06-09 2006-12-14 Enthone Inc. Cobalt electroless plating in microelectronic devices
US7410899B2 (en) 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US20080254205A1 (en) 2007-04-13 2008-10-16 Enthone Inc. Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104651811A (zh) * 2013-10-30 2015-05-27 罗门哈斯电子材料有限公司 用于化学镀的催化剂溶液
CN110230045A (zh) * 2013-10-30 2019-09-13 罗门哈斯电子材料有限公司 用于化学镀的催化剂溶液
TWI821416B (zh) * 2018-09-27 2023-11-11 台灣積體電路製造股份有限公司 半導體裝置的形成方法

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