TW200741027A - Method and apparatus for growing plasma atomic layer - Google Patents

Method and apparatus for growing plasma atomic layer

Info

Publication number
TW200741027A
TW200741027A TW096111050A TW96111050A TW200741027A TW 200741027 A TW200741027 A TW 200741027A TW 096111050 A TW096111050 A TW 096111050A TW 96111050 A TW96111050 A TW 96111050A TW 200741027 A TW200741027 A TW 200741027A
Authority
TW
Taiwan
Prior art keywords
atomic layer
silicon substrate
layer
plasma atomic
silicon
Prior art date
Application number
TW096111050A
Other languages
English (en)
Chinese (zh)
Other versions
TWI356101B (enExample
Inventor
Keisuke Washio
Kazutoshi Murata
Naomasa Miyatake
Hiroyuki Tachibana
Nozomu Hattori
Original Assignee
Mitsui Shipbuilding Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Shipbuilding Eng filed Critical Mitsui Shipbuilding Eng
Publication of TW200741027A publication Critical patent/TW200741027A/zh
Application granted granted Critical
Publication of TWI356101B publication Critical patent/TWI356101B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
TW096111050A 2006-03-30 2007-03-29 Method and apparatus for growing plasma atomic layer TW200741027A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006094755 2006-03-30

Publications (2)

Publication Number Publication Date
TW200741027A true TW200741027A (en) 2007-11-01
TWI356101B TWI356101B (enExample) 2012-01-11

Family

ID=38563424

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111050A TW200741027A (en) 2006-03-30 2007-03-29 Method and apparatus for growing plasma atomic layer

Country Status (6)

Country Link
US (1) US8440268B2 (enExample)
EP (1) EP2006888A4 (enExample)
JP (1) JP4820864B2 (enExample)
KR (1) KR101014858B1 (enExample)
TW (1) TW200741027A (enExample)
WO (1) WO2007114155A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512132B (zh) * 2009-02-12 2015-12-11 三井造船股份有限公司 Atomic layer growth device and film forming method
US9376754B2 (en) 2009-02-12 2016-06-28 Mitsui Engineering & Shipbuilding Thin film forming method

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009093459A1 (ja) * 2008-01-25 2009-07-30 Mitsui Engineering & Shipbuilding Co., Ltd. 原子層成長装置および薄膜形成方法
TW200946714A (en) * 2008-02-18 2009-11-16 Mitsui Engineering & Shipbuilding Co Ltd Atomic layer deposition apparatus and atomic layer deposition method
JP5078656B2 (ja) * 2008-02-18 2012-11-21 三井造船株式会社 原子層成長装置
US7704884B2 (en) * 2008-04-11 2010-04-27 Micron Technology, Inc. Semiconductor processing methods
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
KR101288130B1 (ko) 2011-07-13 2013-07-19 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
JP5741382B2 (ja) 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP6406811B2 (ja) * 2013-11-20 2018-10-17 国立大学法人名古屋大学 Ｉｉｉ 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法
JP6528366B2 (ja) * 2014-07-08 2019-06-12 豊田合成株式会社 縦型トレンチｍｏｓｆｅｔの製造方法
US9685325B2 (en) * 2014-07-19 2017-06-20 Applied Materials, Inc. Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD
JP6968701B2 (ja) 2015-05-02 2021-11-17 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 低誘電率かつ低湿式エッチング速度の誘電体薄膜を堆積させるための方法
JP2018157188A (ja) * 2017-03-15 2018-10-04 東京エレクトロン株式会社 被加工物を処理する方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
JP2019071497A (ja) * 2019-02-13 2019-05-09 豊田合成株式会社 半導体装置およびその製造方法
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus

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Publication number Priority date Publication date Assignee Title
JP2663471B2 (ja) 1988-01-08 1997-10-15 日本電気株式会社 絶縁薄膜の製造方法
JPH05160152A (ja) 1991-12-05 1993-06-25 Fujitsu Ltd 薄膜トランジスタの製造方法
US7419903B2 (en) * 2000-03-07 2008-09-02 Asm International N.V. Thin films
KR100421219B1 (ko) * 2001-06-14 2004-03-02 삼성전자주식회사 β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법
JP4564213B2 (ja) * 2001-09-14 2010-10-20 三井造船株式会社 プラズマ生成用アンテナ及びｃｖｄ装置
JP2003209110A (ja) 2002-01-17 2003-07-25 Sony Corp 金属酸窒化膜の製造方法および絶縁ゲート型電界効果トランジスタおよびその製造方法
TWI391035B (zh) * 2002-12-16 2013-03-21 獨立行政法人科學技術振興機構 Plasma generation device, plasma control method and substrate manufacturing method (1)
JP4588329B2 (ja) * 2003-02-14 2010-12-01 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
US7897217B2 (en) * 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512132B (zh) * 2009-02-12 2015-12-11 三井造船股份有限公司 Atomic layer growth device and film forming method
US9376754B2 (en) 2009-02-12 2016-06-28 Mitsui Engineering & Shipbuilding Thin film forming method

Also Published As

Publication number Publication date
KR20080100836A (ko) 2008-11-19
EP2006888A4 (en) 2011-11-09
JP4820864B2 (ja) 2011-11-24
EP2006888A9 (en) 2009-07-22
US20090291232A1 (en) 2009-11-26
KR101014858B1 (ko) 2011-02-15
US8440268B2 (en) 2013-05-14
WO2007114155A1 (ja) 2007-10-11
TWI356101B (enExample) 2012-01-11
EP2006888A2 (en) 2008-12-24
JPWO2007114155A1 (ja) 2009-08-13

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