WO2003095702A3 - Method for curing low dielectric constant film by electron beam - Google Patents

Method for curing low dielectric constant film by electron beam Download PDF

Info

Publication number
WO2003095702A3
WO2003095702A3 PCT/US2003/014272 US0314272W WO03095702A3 WO 2003095702 A3 WO2003095702 A3 WO 2003095702A3 US 0314272 W US0314272 W US 0314272W WO 03095702 A3 WO03095702 A3 WO 03095702A3
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric constant
low dielectric
constant film
electron beam
curing low
Prior art date
Application number
PCT/US2003/014272
Other languages
French (fr)
Other versions
WO2003095702A2 (en
Inventor
Farhad D Moghadam
Jun Zhao
Timothy Weidman
Rick J Roberts
Li-Qun Xia
Alexandros T Demos
Wen H Zhu
Tzu-Fang Huang
Lihua Li
Ellie Y Yieh
Yi Zheng
Srinivas D Nemani
Eric Hollar
Kang Sub Yim
Son Van Nguyen
Cruz Lester A D
Troy Kim
Dian Sugiarto
Peter Wai-Man Lee
Saad Hichem M
Melissa M Tam
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/302,393 external-priority patent/US7060330B2/en
Priority claimed from US10/302,375 external-priority patent/US20040101632A1/en
Priority claimed from US10/409,887 external-priority patent/US20030211244A1/en
Priority to EP03731108A priority Critical patent/EP1504138A2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR10-2004-7018003A priority patent/KR20050004844A/en
Priority to JP2004503689A priority patent/JP2005524983A/en
Publication of WO2003095702A2 publication Critical patent/WO2003095702A2/en
Publication of WO2003095702A3 publication Critical patent/WO2003095702A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/068—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using ionising radiations (gamma, X, electrons)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Abstract

A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam at conditions sufficient to increase the hardness of the low dielectric constant film.
PCT/US2003/014272 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam WO2003095702A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03731108A EP1504138A2 (en) 2002-05-08 2003-05-07 Method for using low dielectric constant film by electron beam
KR10-2004-7018003A KR20050004844A (en) 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam
JP2004503689A JP2005524983A (en) 2002-05-08 2003-05-08 Method of curing low dielectric constant film by electron beam

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US37879902P 2002-05-08 2002-05-08
US60/378,799 2002-05-08
US10/302,393 US7060330B2 (en) 2002-05-08 2002-11-22 Method for forming ultra low k films using electron beam
US10/302,375 2002-11-22
US10/302,375 US20040101632A1 (en) 2002-11-22 2002-11-22 Method for curing low dielectric constant film by electron beam
US10/302,393 2002-11-22
US10/409,887 2003-04-08
US10/409,887 US20030211244A1 (en) 2002-04-11 2003-04-08 Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric

Publications (2)

Publication Number Publication Date
WO2003095702A2 WO2003095702A2 (en) 2003-11-20
WO2003095702A3 true WO2003095702A3 (en) 2004-04-15

Family

ID=29424745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/014272 WO2003095702A2 (en) 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam

Country Status (5)

Country Link
EP (1) EP1504138A2 (en)
JP (1) JP2005524983A (en)
CN (1) CN100400707C (en)
TW (1) TWI282125B (en)
WO (1) WO2003095702A2 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7056560B2 (en) 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US20050260420A1 (en) * 2003-04-01 2005-11-24 Collins Martha J Low dielectric materials and methods for making same
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US20040253378A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
JP4032044B2 (en) * 2003-06-17 2008-01-16 株式会社半導体プロセス研究所 Film forming method, semiconductor device manufacturing method, and semiconductor device
US7147900B2 (en) * 2003-08-14 2006-12-12 Asm Japan K.K. Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
CN100446193C (en) * 2004-02-13 2008-12-24 松下电器产业株式会社 Method for forming organic/inorganic hybrid insulation
WO2005087974A2 (en) * 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
JP2005294333A (en) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd Film depositing method and semiconductor device
US7611996B2 (en) 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US7018941B2 (en) * 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
JP4435666B2 (en) 2004-11-09 2010-03-24 東京エレクトロン株式会社 Plasma processing method, film forming method
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
JP4997435B2 (en) * 2005-04-08 2012-08-08 大陽日酸株式会社 Insulating film material and method of forming the same
JP2007042747A (en) * 2005-08-01 2007-02-15 Taiyo Nippon Sanso Corp Insulting film and method of forming the same
JP2007051996A (en) * 2005-08-19 2007-03-01 Ngk Insulators Ltd Electron beam irradiation device
JP4641933B2 (en) * 2005-11-28 2011-03-02 三井化学株式会社 Thin film formation method
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
JP2007258403A (en) * 2006-03-23 2007-10-04 United Microelectronics Corp Porous low dielectric constant thin film and its manufacturing method
US7829422B2 (en) 2006-12-22 2010-11-09 Chartered Semiconductor Manufacturing, Ltd. Integrated circuit having ultralow-K dielectric layer
JP5074059B2 (en) * 2007-02-28 2012-11-14 東京エレクトロン株式会社 Interlayer insulating film and wiring structure, and manufacturing method thereof
US7998536B2 (en) * 2007-07-12 2011-08-16 Applied Materials, Inc. Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition
US7989033B2 (en) * 2007-07-12 2011-08-02 Applied Materials, Inc. Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition
US7964442B2 (en) * 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
JP2010153824A (en) 2008-11-18 2010-07-08 Renesas Electronics Corp Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
JP2011014872A (en) * 2009-06-04 2011-01-20 Tokyo Electron Ltd Method and device for forming amorphous carbon film
JP5710770B2 (en) * 2010-10-05 2015-04-30 シルコテック・コーポレーション Method for producing a wear-resistant coating
US9371423B2 (en) * 2013-07-09 2016-06-21 General Electric Company Methods and apparatus for crosslinking a silicon carbide fiber precursor polymer
US9219006B2 (en) * 2014-01-13 2015-12-22 Applied Materials, Inc. Flowable carbon film by FCVD hardware using remote plasma PECVD
US10910216B2 (en) 2017-11-28 2021-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Low-k dielectric and processes for forming same
US20200071819A1 (en) * 2018-08-29 2020-03-05 Versum Materials Us, Llc Methods For Making Silicon Containing Films That Have High Carbon Content
WO2020112782A1 (en) * 2018-11-27 2020-06-04 Versum Materials Us, Llc 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
US11756786B2 (en) * 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
CN110158052B (en) * 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 Low dielectric constant film and method for producing the same
CN112595656B (en) * 2020-12-09 2022-05-27 中国兵器工业第五九研究所 Testing device and evaluation method for adaptability of explosive device long-storage environment for bomb

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997000535A1 (en) * 1995-06-15 1997-01-03 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
WO2001029052A1 (en) * 1999-10-18 2001-04-26 Alliedsignal Inc. Deposition of films using organosilsesquioxane-precursors
US6271146B1 (en) * 1999-09-30 2001-08-07 Electron Vision Corporation Electron beam treatment of fluorinated silicate glass
WO2001061737A1 (en) * 2000-02-17 2001-08-23 Electron Vision Corporation Electron beam modification of cvd deposited films, forming low dielectric constant materials
EP1354980A1 (en) * 2002-04-17 2003-10-22 Air Products And Chemicals, Inc. Method for forming a porous SiOCH layer.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080526A (en) * 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
US6312793B1 (en) * 1999-05-26 2001-11-06 International Business Machines Corporation Multiphase low dielectric constant material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997000535A1 (en) * 1995-06-15 1997-01-03 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US6271146B1 (en) * 1999-09-30 2001-08-07 Electron Vision Corporation Electron beam treatment of fluorinated silicate glass
WO2001029052A1 (en) * 1999-10-18 2001-04-26 Alliedsignal Inc. Deposition of films using organosilsesquioxane-precursors
WO2001061737A1 (en) * 2000-02-17 2001-08-23 Electron Vision Corporation Electron beam modification of cvd deposited films, forming low dielectric constant materials
EP1354980A1 (en) * 2002-04-17 2003-10-22 Air Products And Chemicals, Inc. Method for forming a porous SiOCH layer.

Also Published As

Publication number Publication date
CN1662676A (en) 2005-08-31
CN100400707C (en) 2008-07-09
TW200403766A (en) 2004-03-01
TWI282125B (en) 2007-06-01
JP2005524983A (en) 2005-08-18
EP1504138A2 (en) 2005-02-09
WO2003095702A2 (en) 2003-11-20

Similar Documents

Publication Publication Date Title
WO2003095702A3 (en) Method for curing low dielectric constant film by electron beam
WO2004063422A3 (en) Method for curing low dielectric constant film using direct current bias
WO2005087974A3 (en) Cvd processes for the deposition of amorphous carbon films
WO2005057630A3 (en) Manufacturable low-temperature silicon carbide deposition technology
TW200633056A (en) Improved deposition rate plasma enhanced chemical vapor process
WO2006007313A3 (en) Improving water-barrier performance of an encapsulating film
EP1523034A3 (en) Method of manufacturing silicon carbide film
TW200634976A (en) Method for forming a multiple layer passivation film and a device incorporating the same
TW200420748A (en) Method for enhancing deposition rate of chemical vapor deposition films
EP1260606A3 (en) Low dielectric constant material and method of processing by cvd
EP1265276A4 (en) Method for forming dielectric film
WO2004008827A3 (en) Atomic layer deposition of high k dielectric films
TW200502888A (en) Manufacturing method of optoelectronic device, optoelectronic device, and electronic machine
TW200509246A (en) Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
WO2004101177A3 (en) Method for coating substrates with a carbon-based material
EP1596428A4 (en) Organic thin-film transistor device and method for manufacturing same
WO2004032196A3 (en) Method of fabricating semiconductor by nitrogen doping of silicon film
EP1154468A3 (en) Method of depositing an amorphous carbon layer
AU2002313000A1 (en) Article having a plasmapolymer coating and method for producing the same
EP0838831A3 (en) Electron emissive film and method
WO2006118735A3 (en) Method of making diamond-like carbon hydrophilic using barrier discharge pyrolysis
TW358963B (en) Method and apparatus for depositing deep UV photoresist films
WO2005038865A3 (en) Amorphous carbon layer to improve photoresist adhesion
AU2001278548A1 (en) Barrier coating
TW200618115A (en) Etch with uniformity control

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020047018003

Country of ref document: KR

Ref document number: 2004503689

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003731108

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20038146177

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020047018003

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003731108

Country of ref document: EP