TW200739948A - Gallium nitride-based compound semiconductor light-emitting device - Google Patents
Gallium nitride-based compound semiconductor light-emitting deviceInfo
- Publication number
- TW200739948A TW200739948A TW095146698A TW95146698A TW200739948A TW 200739948 A TW200739948 A TW 200739948A TW 095146698 A TW095146698 A TW 095146698A TW 95146698 A TW95146698 A TW 95146698A TW 200739948 A TW200739948 A TW 200739948A
- Authority
- TW
- Taiwan
- Prior art keywords
- gallium nitride
- based compound
- compound semiconductor
- emitting device
- type semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 229910002601 GaN Inorganic materials 0.000 title abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 238000000605 extraction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005358717A JP4986445B2 (ja) | 2005-12-13 | 2005-12-13 | 窒化ガリウム系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739948A true TW200739948A (en) | 2007-10-16 |
| TWI340478B TWI340478B (en) | 2011-04-11 |
Family
ID=38163075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095146698A TWI340478B (en) | 2005-12-13 | 2006-12-13 | Gallium nitride-based compound semiconductor light-emitting device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8258541B2 (zh) |
| EP (1) | EP1965444B1 (zh) |
| JP (1) | JP4986445B2 (zh) |
| KR (1) | KR101007202B1 (zh) |
| CN (1) | CN101331617A (zh) |
| TW (1) | TWI340478B (zh) |
| WO (1) | WO2007069774A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10074772B2 (en) | 2012-01-10 | 2018-09-11 | Lumileds Llc | Controlled LED light output by selective area roughening |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5318353B2 (ja) * | 2007-02-14 | 2013-10-16 | 三菱化学株式会社 | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP4903643B2 (ja) * | 2007-07-12 | 2012-03-28 | 株式会社東芝 | 半導体発光素子 |
| JP4993371B2 (ja) * | 2007-11-21 | 2012-08-08 | サンケン電気株式会社 | 半導体発光素子用ウエーハの粗面化方法及び半導体発光素子 |
| KR101495381B1 (ko) * | 2007-11-21 | 2015-02-24 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 반도체의 결정 성장 방법 |
| JP2011505700A (ja) * | 2007-11-30 | 2011-02-24 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 表面ラフニングによる高い光抽出効率の窒化物ベースの発光ダイオード |
| WO2009084325A1 (ja) * | 2007-12-28 | 2009-07-09 | Mitsubishi Chemical Corporation | Ｌｅｄ素子およびｌｅｄ素子の製造方法 |
| JP2009200178A (ja) * | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | 半導体発光素子 |
| KR100964811B1 (ko) * | 2008-09-29 | 2010-06-22 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자를 제조하는 방법 |
| KR101018179B1 (ko) * | 2008-10-16 | 2011-02-28 | 삼성엘이디 주식회사 | Ⅲ족 질화물 반도체 기판의 패턴 형성 방법 및 ⅲ족 질화물반도체 발광소자의 제조 방법 |
| DE102008062932A1 (de) | 2008-12-23 | 2010-06-24 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| KR101081166B1 (ko) * | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
| KR101103892B1 (ko) * | 2009-12-08 | 2012-01-12 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
| CN102024888B (zh) * | 2009-12-30 | 2012-01-25 | 比亚迪股份有限公司 | 一种发光二极管及其制作方法 |
| KR101641365B1 (ko) | 2010-03-09 | 2016-07-20 | 엘지디스플레이 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2012094688A (ja) * | 2010-10-27 | 2012-05-17 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
| US8759127B2 (en) * | 2011-08-31 | 2014-06-24 | Toshiba Techno Center Inc. | Gold micromask for roughening to promote light extraction in an LED |
| CN103367595B (zh) * | 2012-03-30 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
| KR102013363B1 (ko) * | 2012-11-09 | 2019-08-22 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| US10014442B2 (en) * | 2013-04-22 | 2018-07-03 | Korea Polytechnic University Industry Academic Cooperation Foundation | Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode |
| CN103456855B (zh) * | 2013-09-17 | 2016-05-11 | 聚灿光电科技股份有限公司 | 一种led表面粗化芯片以及制作方法 |
| CN106784223B (zh) * | 2016-12-22 | 2019-05-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| JP7137070B2 (ja) * | 2018-12-03 | 2022-09-14 | 日本電信電話株式会社 | 窒化物半導体光電極の製造方法 |
| JP7484572B2 (ja) * | 2020-08-25 | 2024-05-16 | 豊田合成株式会社 | ｐ型ＩＩＩ族窒化物半導体の製造方法 |
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| JPH0832108A (ja) * | 1994-07-11 | 1996-02-02 | Toshiba Corp | 光半導体素子の製造方法 |
| JP3333330B2 (ja) * | 1994-09-30 | 2002-10-15 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP5019664B2 (ja) * | 1998-07-28 | 2012-09-05 | アイメック | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
| EP0977063A1 (en) | 1998-07-28 | 2000-02-02 | Interuniversitair Micro-Elektronica Centrum Vzw | A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system |
| JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP3586594B2 (ja) * | 1999-08-25 | 2004-11-10 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
| JP4501234B2 (ja) * | 2000-06-28 | 2010-07-14 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP3466144B2 (ja) * | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
| DE60220379T2 (de) * | 2001-01-23 | 2008-01-24 | Donnelly Corp., Holland | Verbessertes fahrzeugbeleuchtungssystem |
| US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
| TW564584B (en) | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| JP4098568B2 (ja) * | 2001-06-25 | 2008-06-11 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP3782357B2 (ja) | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
| JP3815335B2 (ja) | 2002-01-18 | 2006-08-30 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
| JP2004031856A (ja) | 2002-06-28 | 2004-01-29 | Sumitomo Electric Ind Ltd | ＺｎＳｅ系発光装置およびその製造方法 |
| TWI228323B (en) | 2002-09-06 | 2005-02-21 | Sony Corp | Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof |
| JP4311000B2 (ja) * | 2002-11-28 | 2009-08-12 | 日亜化学工業株式会社 | 窒化物半導体発光素子とその製造方法 |
| JP2003347586A (ja) * | 2003-07-08 | 2003-12-05 | Toshiba Corp | 半導体発光素子 |
| JP4277617B2 (ja) | 2003-08-08 | 2009-06-10 | 日立電線株式会社 | 半導体発光素子の製造方法 |
| TWI245439B (en) | 2003-12-17 | 2005-12-11 | Showa Denko Kk | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof |
| KR100598155B1 (ko) * | 2004-03-17 | 2006-07-07 | (주)옵토웨이 | 무반사 처리된 고효율 발광 다이오드 소자 |
| US7772605B2 (en) | 2004-03-19 | 2010-08-10 | Showa Denko K.K. | Compound semiconductor light-emitting device |
| JP4540514B2 (ja) * | 2004-03-19 | 2010-09-08 | 昭和電工株式会社 | 化合物半導体発光素子およびその製造方法 |
| WO2007029842A1 (en) * | 2005-09-06 | 2007-03-15 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and production method thereof |
-
2005
- 2005-12-13 JP JP2005358717A patent/JP4986445B2/ja active Active
-
2006
- 2006-12-13 US US12/097,139 patent/US8258541B2/en active Active
- 2006-12-13 WO PCT/JP2006/325314 patent/WO2007069774A1/ja active Application Filing
- 2006-12-13 KR KR1020087014148A patent/KR101007202B1/ko active IP Right Grant
- 2006-12-13 EP EP06834984.4A patent/EP1965444B1/en not_active Not-in-force
- 2006-12-13 CN CNA2006800469198A patent/CN101331617A/zh active Pending
- 2006-12-13 TW TW095146698A patent/TWI340478B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10074772B2 (en) | 2012-01-10 | 2018-09-11 | Lumileds Llc | Controlled LED light output by selective area roughening |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4986445B2 (ja) | 2012-07-25 |
| US8258541B2 (en) | 2012-09-04 |
| WO2007069774A1 (ja) | 2007-06-21 |
| KR20080070742A (ko) | 2008-07-30 |
| JP2007165515A (ja) | 2007-06-28 |
| EP1965444B1 (en) | 2017-07-12 |
| US20090045434A1 (en) | 2009-02-19 |
| EP1965444A1 (en) | 2008-09-03 |
| KR101007202B1 (ko) | 2011-01-12 |
| EP1965444A4 (en) | 2014-01-08 |
| TWI340478B (en) | 2011-04-11 |
| CN101331617A (zh) | 2008-12-24 |
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