TW200739716A - Method for controlling corrosion of a substrate - Google Patents
Method for controlling corrosion of a substrateInfo
- Publication number
- TW200739716A TW200739716A TW096105118A TW96105118A TW200739716A TW 200739716 A TW200739716 A TW 200739716A TW 096105118 A TW096105118 A TW 096105118A TW 96105118 A TW96105118 A TW 96105118A TW 200739716 A TW200739716 A TW 200739716A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- hydrogen
- controlling corrosion
- further comprise
- residue
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 238000005260 corrosion Methods 0.000 title abstract 3
- 230000007797 corrosion Effects 0.000 title abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/363,833 US8101025B2 (en) | 2003-05-27 | 2006-02-27 | Method for controlling corrosion of a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739716A true TW200739716A (en) | 2007-10-16 |
Family
ID=38614256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096105118A TW200739716A (en) | 2006-02-27 | 2007-02-12 | Method for controlling corrosion of a substrate |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20070089082A (zh) |
CN (1) | CN101030531A (zh) |
TW (1) | TW200739716A (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120014699A (ko) * | 2010-08-10 | 2012-02-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR101932250B1 (ko) * | 2011-06-30 | 2019-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치 |
KR20130063871A (ko) * | 2011-12-07 | 2013-06-17 | 삼성전자주식회사 | 자기 소자 및 그 제조 방법 |
JP6531422B2 (ja) * | 2014-03-11 | 2019-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体 |
KR101870491B1 (ko) * | 2014-03-11 | 2018-06-22 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체 |
JP6349796B2 (ja) * | 2014-03-11 | 2018-07-04 | 東京エレクトロン株式会社 | プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体 |
US9543157B2 (en) * | 2014-09-30 | 2017-01-10 | Infineon Technologies Ag | Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer |
KR102449182B1 (ko) * | 2015-10-15 | 2022-10-04 | 삼성전자주식회사 | 배선 형성 방법 및 이를 이용한 자기 기억 소자의 제조방법 |
US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
KR101858448B1 (ko) * | 2016-11-22 | 2018-06-28 | 한국기술교육대학교 산학협력단 | 실리콘 기판 표면의 잔류 할로겐 제거방법 및 이의 장치 |
CN108666203B (zh) * | 2017-04-01 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | 改善晶圆边缘形貌的方法 |
CN110386587A (zh) * | 2018-04-18 | 2019-10-29 | 北京大学 | 一种基于ald技术的硅湿法腐蚀掩膜方法 |
FR3088346A1 (fr) * | 2018-11-14 | 2020-05-15 | Safran Aircraft Engines | Procede de decapage d’une piece de turbomachine |
TWI730419B (zh) * | 2019-09-20 | 2021-06-11 | 力晶積成電子製造股份有限公司 | 鋁層的蝕刻後保護方法 |
CN113517219B (zh) * | 2020-04-09 | 2024-08-02 | 中国科学院微电子研究所 | 金属刻蚀后防止金属腐蚀的方法 |
CN113471070B (zh) * | 2020-05-22 | 2022-04-12 | 北京屹唐半导体科技股份有限公司 | 使用臭氧气体和氢自由基的工件加工 |
-
2007
- 2007-02-12 TW TW096105118A patent/TW200739716A/zh unknown
- 2007-02-15 CN CNA2007100802731A patent/CN101030531A/zh active Pending
- 2007-02-26 KR KR1020070019174A patent/KR20070089082A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN101030531A (zh) | 2007-09-05 |
KR20070089082A (ko) | 2007-08-30 |
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