TW200739716A - Method for controlling corrosion of a substrate - Google Patents

Method for controlling corrosion of a substrate

Info

Publication number
TW200739716A
TW200739716A TW096105118A TW96105118A TW200739716A TW 200739716 A TW200739716 A TW 200739716A TW 096105118 A TW096105118 A TW 096105118A TW 96105118 A TW96105118 A TW 96105118A TW 200739716 A TW200739716 A TW 200739716A
Authority
TW
Taiwan
Prior art keywords
substrate
hydrogen
controlling corrosion
further comprise
residue
Prior art date
Application number
TW096105118A
Other languages
English (en)
Inventor
Eujin Lim
Chungdee Pong
Changhun Lee
Mark Kawaguchi
Guowen Ding
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/363,833 external-priority patent/US8101025B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200739716A publication Critical patent/TW200739716A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096105118A 2006-02-27 2007-02-12 Method for controlling corrosion of a substrate TW200739716A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/363,833 US8101025B2 (en) 2003-05-27 2006-02-27 Method for controlling corrosion of a substrate

Publications (1)

Publication Number Publication Date
TW200739716A true TW200739716A (en) 2007-10-16

Family

ID=38614256

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105118A TW200739716A (en) 2006-02-27 2007-02-12 Method for controlling corrosion of a substrate

Country Status (3)

Country Link
KR (1) KR20070089082A (zh)
CN (1) CN101030531A (zh)
TW (1) TW200739716A (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120014699A (ko) * 2010-08-10 2012-02-20 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR101932250B1 (ko) * 2011-06-30 2019-03-20 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
KR20130063871A (ko) * 2011-12-07 2013-06-17 삼성전자주식회사 자기 소자 및 그 제조 방법
JP6531422B2 (ja) * 2014-03-11 2019-06-19 東京エレクトロン株式会社 プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体
KR101870491B1 (ko) * 2014-03-11 2018-06-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체
JP6349796B2 (ja) * 2014-03-11 2018-07-04 東京エレクトロン株式会社 プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体
US9543157B2 (en) * 2014-09-30 2017-01-10 Infineon Technologies Ag Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
KR102449182B1 (ko) * 2015-10-15 2022-10-04 삼성전자주식회사 배선 형성 방법 및 이를 이용한 자기 기억 소자의 제조방법
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
KR101858448B1 (ko) * 2016-11-22 2018-06-28 한국기술교육대학교 산학협력단 실리콘 기판 표면의 잔류 할로겐 제거방법 및 이의 장치
CN108666203B (zh) * 2017-04-01 2020-11-27 中芯国际集成电路制造(上海)有限公司 改善晶圆边缘形貌的方法
CN110386587A (zh) * 2018-04-18 2019-10-29 北京大学 一种基于ald技术的硅湿法腐蚀掩膜方法
FR3088346A1 (fr) * 2018-11-14 2020-05-15 Safran Aircraft Engines Procede de decapage d’une piece de turbomachine
TWI730419B (zh) * 2019-09-20 2021-06-11 力晶積成電子製造股份有限公司 鋁層的蝕刻後保護方法
CN113517219B (zh) * 2020-04-09 2024-08-02 中国科学院微电子研究所 金属刻蚀后防止金属腐蚀的方法
CN113471070B (zh) * 2020-05-22 2022-04-12 北京屹唐半导体科技股份有限公司 使用臭氧气体和氢自由基的工件加工

Also Published As

Publication number Publication date
CN101030531A (zh) 2007-09-05
KR20070089082A (ko) 2007-08-30

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