TW200739710A - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatusInfo
- Publication number
- TW200739710A TW200739710A TW096104743A TW96104743A TW200739710A TW 200739710 A TW200739710 A TW 200739710A TW 096104743 A TW096104743 A TW 096104743A TW 96104743 A TW96104743 A TW 96104743A TW 200739710 A TW200739710 A TW 200739710A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- substrate processing
- liquid film
- freezing
- substrates
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 14
- 238000003672 processing method Methods 0.000 title 1
- 238000004140 cleaning Methods 0.000 abstract 5
- 230000008014 freezing Effects 0.000 abstract 4
- 238000007710 freezing Methods 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 4
- 239000002245 particle Substances 0.000 abstract 4
- 239000000126 substance Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006108801A JP4884057B2 (ja) | 2006-04-11 | 2006-04-11 | 基板処理方法および基板処理装置 |
JP2006248181A JP4767138B2 (ja) | 2006-09-13 | 2006-09-13 | 基板処理装置、液膜凍結方法および基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739710A true TW200739710A (en) | 2007-10-16 |
TWI362067B TWI362067B (zh) | 2012-04-11 |
Family
ID=38573854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104743A TW200739710A (en) | 2006-04-11 | 2007-02-09 | Substrate processing method and substrate processing apparatus |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070235062A1 (zh) |
KR (1) | KR100835776B1 (zh) |
TW (1) | TW200739710A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI421927B (zh) * | 2010-03-09 | 2014-01-01 | Dainippon Screen Mfg | 基板清洗方法及基板清洗裝置 |
TWI584364B (zh) * | 2013-06-21 | 2017-05-21 | Tokyo Electron Ltd | Substrate liquid processing device and substrate liquid treatment method |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4514700B2 (ja) * | 2005-12-13 | 2010-07-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US20070281106A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20090120368A1 (en) * | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Rotating temperature controlled substrate pedestal for film uniformity |
US7964040B2 (en) * | 2007-11-08 | 2011-06-21 | Applied Materials, Inc. | Multi-port pumping system for substrate processing chambers |
JP5243165B2 (ja) * | 2008-09-25 | 2013-07-24 | 大日本スクリーン製造株式会社 | 基板洗浄方法および基板洗浄装置 |
TWI480937B (zh) | 2011-01-06 | 2015-04-11 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
JP5715831B2 (ja) * | 2011-01-20 | 2015-05-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6090837B2 (ja) | 2012-06-13 | 2017-03-08 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US8691022B1 (en) * | 2012-12-18 | 2014-04-08 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US10994311B2 (en) * | 2013-05-31 | 2021-05-04 | Michel Bourdat | Specific device for cleaning electronic components and/or circuits |
SG10201407598VA (en) | 2013-11-19 | 2015-06-29 | Ebara Corp | Substrate cleaning apparatus and substrate processing apparatus |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
JP6464808B2 (ja) * | 2015-02-23 | 2019-02-06 | セイコーエプソン株式会社 | 液体噴射装置 |
JP6467260B2 (ja) | 2015-03-24 | 2019-02-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN105487302B (zh) * | 2016-01-19 | 2017-11-24 | 京东方科技集团股份有限公司 | 一种液晶涂覆装置及方法 |
JP6653228B2 (ja) * | 2016-08-09 | 2020-02-26 | キオクシア株式会社 | 基板の洗浄方法および基板処理装置 |
JP6738235B2 (ja) | 2016-08-09 | 2020-08-12 | 芝浦メカトロニクス株式会社 | 基板処理装置、および基板処理方法 |
WO2020091001A1 (ja) * | 2018-10-31 | 2020-05-07 | 株式会社Screenホールディングス | 基板処理装置 |
TWI789842B (zh) * | 2020-09-11 | 2023-01-11 | 日商芝浦機械電子裝置股份有限公司 | 基板處理裝置 |
CN116190302A (zh) * | 2021-11-29 | 2023-05-30 | 盛美半导体设备(上海)股份有限公司 | 晶圆清洗装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4817652A (en) * | 1987-03-26 | 1989-04-04 | Regents Of The University Of Minnesota | System for surface and fluid cleaning |
US4962776A (en) * | 1987-03-26 | 1990-10-16 | Regents Of The University Of Minnesota | Process for surface and fluid cleaning |
JPH03116832A (ja) * | 1989-09-29 | 1991-05-17 | Mitsubishi Electric Corp | 固体表面の洗浄方法 |
JP3380021B2 (ja) * | 1993-12-28 | 2003-02-24 | 株式会社エフティーエル | 洗浄方法 |
JP3504023B2 (ja) * | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
JP3343013B2 (ja) * | 1995-12-28 | 2002-11-11 | 大日本スクリーン製造株式会社 | 基板洗浄方法及びその装置 |
US5997653A (en) * | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
DE19916345A1 (de) * | 1999-04-12 | 2000-10-26 | Steag Electronic Systems Gmbh | Verfahren und Vorrichtung zum Reinigen von Substraten |
US6705331B2 (en) * | 2000-11-20 | 2004-03-16 | Dainippon Screen Mfg., Co., Ltd. | Substrate cleaning apparatus |
US6444582B1 (en) * | 2001-02-05 | 2002-09-03 | United Microelectronics Corp. | Methods for removing silicon-oxy-nitride layer and wafer surface cleaning |
KR100421038B1 (ko) * | 2001-03-28 | 2004-03-03 | 삼성전자주식회사 | 표면으로부터 오염물을 제거하는 세정 장비 및 이를이용한 세정 방법 |
US6783599B2 (en) * | 2001-07-19 | 2004-08-31 | International Business Machines Corporation | Method of cleaning contaminants from the surface of a substrate |
JP4349606B2 (ja) * | 2002-03-25 | 2009-10-21 | 大日本スクリーン製造株式会社 | 基板洗浄方法 |
JP3993048B2 (ja) * | 2002-08-30 | 2007-10-17 | 大日本スクリーン製造株式会社 | 基板処理装置 |
KR20040049548A (ko) * | 2002-12-06 | 2004-06-12 | 주식회사 하이닉스반도체 | 웨이퍼 세정방법 |
US6864458B2 (en) * | 2003-01-21 | 2005-03-08 | Applied Materials, Inc. | Iced film substrate cleaning |
JP4494840B2 (ja) * | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
JP4651924B2 (ja) * | 2003-09-18 | 2011-03-16 | シャープ株式会社 | 薄膜半導体装置および薄膜半導体装置の製造方法 |
JP2006332396A (ja) * | 2005-05-27 | 2006-12-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
-
2007
- 2007-02-09 TW TW096104743A patent/TW200739710A/zh unknown
- 2007-03-27 KR KR1020070029681A patent/KR100835776B1/ko active IP Right Grant
- 2007-04-04 US US11/696,464 patent/US20070235062A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI421927B (zh) * | 2010-03-09 | 2014-01-01 | Dainippon Screen Mfg | 基板清洗方法及基板清洗裝置 |
TWI584364B (zh) * | 2013-06-21 | 2017-05-21 | Tokyo Electron Ltd | Substrate liquid processing device and substrate liquid treatment method |
Also Published As
Publication number | Publication date |
---|---|
KR20070101124A (ko) | 2007-10-16 |
US20070235062A1 (en) | 2007-10-11 |
TWI362067B (zh) | 2012-04-11 |
KR100835776B1 (ko) | 2008-06-05 |
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