TW200739258A - Radiation-sensitive resin composition - Google Patents

Radiation-sensitive resin composition

Info

Publication number
TW200739258A
TW200739258A TW095143067A TW95143067A TW200739258A TW 200739258 A TW200739258 A TW 200739258A TW 095143067 A TW095143067 A TW 095143067A TW 95143067 A TW95143067 A TW 95143067A TW 200739258 A TW200739258 A TW 200739258A
Authority
TW
Taiwan
Prior art keywords
radiation
liquid
resin composition
sensitive resin
immersion exposure
Prior art date
Application number
TW095143067A
Other languages
English (en)
Inventor
Atsushi Nakamura
Yong Wang
Takayuki Tsuji
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200739258A publication Critical patent/TW200739258A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095143067A 2005-11-21 2006-11-21 Radiation-sensitive resin composition TW200739258A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005335848 2005-11-21

Publications (1)

Publication Number Publication Date
TW200739258A true TW200739258A (en) 2007-10-16

Family

ID=38048723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143067A TW200739258A (en) 2005-11-21 2006-11-21 Radiation-sensitive resin composition

Country Status (7)

Country Link
US (1) US20090305161A1 (zh)
EP (1) EP1953595A4 (zh)
JP (1) JP4821776B2 (zh)
KR (1) KR20080068142A (zh)
CN (1) CN101313247A (zh)
TW (1) TW200739258A (zh)
WO (1) WO2007058345A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4892698B2 (ja) * 2006-01-18 2012-03-07 Ｊｓｒ株式会社 新規樹脂及びそれを用いた感放射線性樹脂組成物
TWI477909B (zh) 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
JP4991326B2 (ja) * 2006-01-24 2012-08-01 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5090259B2 (ja) * 2008-06-07 2012-12-05 株式会社ダイセル アダマンタノン骨格を有する重合性化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
US8617785B2 (en) * 2009-01-16 2013-12-31 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
US8450041B2 (en) * 2009-01-16 2013-05-28 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
US20110039210A1 (en) * 2009-05-20 2011-02-17 Rohm And Haas Electronic Materials Llc Novel resins and photoresist compositions comprising same
KR20110088453A (ko) * 2010-01-27 2011-08-03 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴 형성 방법
JP2017165846A (ja) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
DE69214035T2 (de) 1991-06-28 1997-04-10 Ibm Reflexionsverminderde Überzüge
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
DE19705978B4 (de) * 1996-03-02 2013-07-18 Carl Zeiss Ag Immersionsöl
TWI291953B (zh) * 2001-10-23 2008-01-01 Mitsubishi Rayon Co
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
US20060154171A1 (en) * 2003-02-25 2006-07-13 Taku Hirayama Photoresist composition and method of forming resist pattern
JP2005173474A (ja) 2003-12-15 2005-06-30 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物、該レジスト材料を用いたレジストパターン形成方法
WO2005108444A1 (ja) * 2004-05-06 2005-11-17 Jsr Corporation ラクトン系共重合体および感放射線性樹脂組成物
JP4049762B2 (ja) * 2004-05-10 2008-02-20 三菱レイヨン株式会社 レジスト用重合体の製造方法
US7580111B2 (en) * 2004-05-21 2009-08-25 Jsr Corporation Liquid for immersion exposure and immersion exposure method
JP2008502154A (ja) * 2004-06-01 2008-01-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 紫外線透過性アルカンと、これを真空用途および深紫外線用途に利用する方法
JP2007005731A (ja) * 2005-06-27 2007-01-11 Jsr Corp 液浸露光用液体およびその精製方法
JP2007081099A (ja) * 2005-09-14 2007-03-29 Jsr Corp 液浸露光用液体および液浸露光方法
JP2007165866A (ja) * 2005-11-16 2007-06-28 Tokyo Ohka Kogyo Co Ltd 半導体製造用薬液供給装置の洗浄液

Also Published As

Publication number Publication date
CN101313247A (zh) 2008-11-26
EP1953595A1 (en) 2008-08-06
EP1953595A4 (en) 2011-03-30
JP4821776B2 (ja) 2011-11-24
JPWO2007058345A1 (ja) 2009-05-07
WO2007058345A1 (ja) 2007-05-24
US20090305161A1 (en) 2009-12-10
KR20080068142A (ko) 2008-07-22

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