TW200737466A - Carbon nanotubes solder composite for high performance interconnect - Google Patents

Carbon nanotubes solder composite for high performance interconnect

Info

Publication number
TW200737466A
TW200737466A TW095146428A TW95146428A TW200737466A TW 200737466 A TW200737466 A TW 200737466A TW 095146428 A TW095146428 A TW 095146428A TW 95146428 A TW95146428 A TW 95146428A TW 200737466 A TW200737466 A TW 200737466A
Authority
TW
Taiwan
Prior art keywords
carbon nanotubes
high performance
performance interconnect
solder composite
solder
Prior art date
Application number
TW095146428A
Other languages
English (en)
Other versions
TWI333688B (en
Inventor
Dae-Woong Suh
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200737466A publication Critical patent/TW200737466A/zh
Application granted granted Critical
Publication of TWI333688B publication Critical patent/TWI333688B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/026—Nanotubes or nanowires
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    • H05K2201/0323—Carbon
TW095146428A 2005-12-20 2006-12-12 Carbon nanotubes solder composite for high performance interconnect TWI333688B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/313,344 US20070145097A1 (en) 2005-12-20 2005-12-20 Carbon nanotubes solder composite for high performance interconnect

Publications (2)

Publication Number Publication Date
TW200737466A true TW200737466A (en) 2007-10-01
TWI333688B TWI333688B (en) 2010-11-21

Family

ID=38192428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146428A TWI333688B (en) 2005-12-20 2006-12-12 Carbon nanotubes solder composite for high performance interconnect

Country Status (6)

Country Link
US (2) US20070145097A1 (zh)
JP (1) JP5031764B2 (zh)
CN (1) CN101313397B (zh)
DE (1) DE112006003438B4 (zh)
TW (1) TWI333688B (zh)
WO (1) WO2007120228A2 (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080017981A1 (en) * 2006-05-26 2008-01-24 Nano-Proprietary, Inc. Compliant Bumps for Integrated Circuits Using Carbon Nanotubes
US7600667B2 (en) * 2006-09-29 2009-10-13 Intel Corporation Method of assembling carbon nanotube reinforced solder caps
US7710709B2 (en) * 2007-03-30 2010-05-04 Intel Corporation Carbon nanotube coated capacitor electrodes
KR100969437B1 (ko) * 2008-06-13 2010-07-14 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US8420722B2 (en) * 2008-07-10 2013-04-16 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
CN101653877B (zh) * 2009-08-25 2011-08-10 深圳市亿铖达工业有限公司 纳米增强无铅焊料的制备方法
DE102009054427B4 (de) * 2009-11-25 2014-02-13 Kme Germany Ag & Co. Kg Verfahren zum Aufbringen von Gemengen aus Kohlenstoff und Metallpartikeln auf ein Substrat, nach dem Verfahren erhältliches Substrat und dessen Verwendung
CN101894773B (zh) * 2009-11-30 2011-10-26 上海上大瑞沪微系统集成技术有限公司 碳纳米管凸点的制备方法
KR101084571B1 (ko) * 2010-04-22 2011-11-17 한국생산기술연구원 탄소나노튜브 분사 방식의 탄소나노튜브 복합 솔더볼 제조방법 및 이를 이용한 솔더페이스트 제조방법
US8167190B1 (en) 2011-05-06 2012-05-01 Lockheed Martin Corporation Electrically conductive polymer compositions containing metal particles and a graphene and methods for production and use thereof
CN102581504B (zh) * 2012-03-23 2014-07-30 天津大学 石墨烯增强无铅焊料及其制备方法
KR20130125220A (ko) * 2012-05-08 2013-11-18 엘에스산전 주식회사 태양 전지 모듈 및 이의 제조 방법
US9293233B2 (en) 2013-02-11 2016-03-22 Tyco Electronics Corporation Composite cable
CN104416296A (zh) * 2013-09-03 2015-03-18 天津大学 一种增强焊料互联焊点抗电迁移性能的方法和应用
EP3052266A1 (en) * 2013-09-30 2016-08-10 EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt Brazing joining method of cnt assemblies on substrates using an at least ternary brazing alloy; corresponding brazing material and device comprising such assembly
US9597744B2 (en) 2013-11-11 2017-03-21 Siemens Energy, Inc. Method for utilizing a braze material with carbon structures
US9446480B2 (en) 2014-03-10 2016-09-20 Siemens Energy, Inc. Reinforced cladding
KR101671062B1 (ko) * 2014-08-18 2016-10-31 주식회사 경동원 무연 솔더 합금 조성물 및 무연 솔더 합금의 제조 방법
KR101654523B1 (ko) * 2014-08-29 2016-09-07 한국기계연구원 혼성 복합 솔더 합금 및 이의 제조방법
CN104400247B (zh) * 2014-09-29 2016-05-11 哈尔滨工业大学 一种高导热石墨烯--Sn-Ag系复合钎料的制备方法
KR101591454B1 (ko) * 2014-10-07 2016-02-03 주식회사 동희홀딩스 금속 및 산화물로 하이브리드 코팅된 나노카본의 제조방법
CN105478944A (zh) * 2015-12-28 2016-04-13 哈尔滨工业大学 一种碳纳米管辅助钎焊硬质合金和钢的方法
KR102491574B1 (ko) 2016-02-29 2023-01-25 삼성전자주식회사 반도체 패키지의 제조 방법
CN106011515B (zh) * 2016-06-20 2017-12-12 山东建筑大学 一种制备碳纳米管粉末增强锡铅合金的方法
CN106363315B (zh) * 2016-10-26 2019-05-21 亿铖达焊锡制造（昆山）有限公司 一种镀锡碳纳米材料增强复合焊料合金及其焊膏
DE102017209554A1 (de) 2017-05-30 2018-12-06 Robert Bosch Gmbh Kontaktanordnung, Verbundfolie und Ausbildung eines Verbundwerkstoffes
CN109321143A (zh) * 2018-08-28 2019-02-12 上海大学 垂直碳纳米管阵列与纳米银浆复合互连材料及其制备方法
CN113492277B (zh) * 2020-03-19 2022-09-02 江苏奥匠新材料科技有限公司 一种具有金属镀层碳纳米管增强的低温锡膏材料及其制备方法
CN112122826A (zh) * 2020-09-18 2020-12-25 衢州学院 钎焊钛基复合材料与氮化硅陶瓷的焊膏及其方法和应用
JP2024500104A (ja) * 2020-12-16 2024-01-04 カーバイス コーポレイション はんだ－カーボンナノ構造複合体並びにその製造方法及び使用方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2005200A (en) * 1933-03-17 1935-06-18 Thomas F O'gorman Mold for brick-faced blocks
US4699763A (en) * 1986-06-25 1987-10-13 Westinghouse Electric Corp. Circuit breaker contact containing silver and graphite fibers
FR2731106A1 (fr) * 1995-02-27 1996-08-30 Schneider Electric Sa Procede de fabrication d'un materiau de contact electrique composite
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US7125502B2 (en) * 2001-07-06 2006-10-24 William Marsh Rice University Fibers of aligned single-wall carbon nanotubes and process for making the same
US7311967B2 (en) * 2001-10-18 2007-12-25 Intel Corporation Thermal interface material and electronic assembly having such a thermal interface material
KR100858603B1 (ko) * 2001-11-13 2008-09-17 다우 글로벌 테크놀로지스 인크. 전기 전도성 열가소성 중합체 조성물
JP3606855B2 (ja) * 2002-06-28 2005-01-05 ドン ウン インターナショナル カンパニー リミテッド 炭素ナノ粒子の製造方法
US7252877B2 (en) * 2003-02-04 2007-08-07 Intel Corporation Polymer matrices for polymer solder hybrid materials
US7282175B2 (en) * 2003-04-17 2007-10-16 Senju Metal Industry Co., Ltd. Lead-free solder
US6864571B2 (en) * 2003-07-07 2005-03-08 Gelcore Llc Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
JP4005058B2 (ja) * 2003-07-23 2007-11-07 日信工業株式会社 炭素繊維複合材料及びその製造方法、炭素繊維複合成形品及びその製造方法
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
JP4412052B2 (ja) * 2003-10-28 2010-02-10 富士ゼロックス株式会社 複合材およびその製造方法
US7180174B2 (en) * 2003-12-30 2007-02-20 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
WO2005070825A1 (ja) * 2004-01-21 2005-08-04 Sanc Salaam Coproration カーボンナノチューブ含有２次マトリックスコンポジット
US7422141B2 (en) * 2004-01-22 2008-09-09 Hrl Laboratories, Llc Microparticle loaded solder preform allowing bond site control of device spacing at micron, submicron, and nanostructure scale
US20060067852A1 (en) * 2004-09-29 2006-03-30 Daewoong Suh Low melting-point solders, articles made thereby, and processes of making same
TWI393226B (zh) 2004-11-04 2013-04-11 Taiwan Semiconductor Mfg 基於奈米管之填充物
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
US7600667B2 (en) * 2006-09-29 2009-10-13 Intel Corporation Method of assembling carbon nanotube reinforced solder caps
US7758916B2 (en) * 2006-11-13 2010-07-20 Sulzer Metco (Us), Inc. Material and method of manufacture of a solder joint with high thermal conductivity and high electrical conductivity

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CN101313397B (zh) 2013-02-06
DE112006003438T5 (de) 2009-02-19
TWI333688B (en) 2010-11-21
CN101313397A (zh) 2008-11-26
JP5031764B2 (ja) 2012-09-26
US8100314B2 (en) 2012-01-24
WO2007120228A3 (en) 2008-03-13
DE112006003438B4 (de) 2017-03-16
JP2009519136A (ja) 2009-05-14
US20070145097A1 (en) 2007-06-28
US20100126631A1 (en) 2010-05-27

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