US20070145097A1 - Carbon nanotubes solder composite for high performance interconnect - Google Patents

Carbon nanotubes solder composite for high performance interconnect Download PDF

Info

Publication number
US20070145097A1
US20070145097A1 US11/313,344 US31334405A US2007145097A1 US 20070145097 A1 US20070145097 A1 US 20070145097A1 US 31334405 A US31334405 A US 31334405A US 2007145097 A1 US2007145097 A1 US 2007145097A1
Authority
US
United States
Prior art keywords
solder
paste
cnts
composite
cnt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/313,344
Other languages
English (en)
Inventor
Daewoong Suh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to US11/313,344 priority Critical patent/US20070145097A1/en
Assigned to INTEL CORPORATION reassignment INTEL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUH, DAEWOONG
Priority to JP2008545674A priority patent/JP5031764B2/ja
Priority to DE112006003438.3T priority patent/DE112006003438B4/de
Priority to PCT/US2006/046889 priority patent/WO2007120228A2/en
Priority to CN2006800431186A priority patent/CN101313397B/zh
Priority to TW095146428A priority patent/TWI333688B/zh
Publication of US20070145097A1 publication Critical patent/US20070145097A1/en
Priority to US12/690,052 priority patent/US8100314B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/13393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/133 - H01L2224/13391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8121—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/026—Nanotubes or nanowires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Conductive Materials (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Wire Bonding (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
US11/313,344 2005-12-20 2005-12-20 Carbon nanotubes solder composite for high performance interconnect Abandoned US20070145097A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/313,344 US20070145097A1 (en) 2005-12-20 2005-12-20 Carbon nanotubes solder composite for high performance interconnect
JP2008545674A JP5031764B2 (ja) 2005-12-20 2006-12-07 高特性相互接続用カーボンナノチューブはんだ複合材料
DE112006003438.3T DE112006003438B4 (de) 2005-12-20 2006-12-07 Verfahren zur Herstellung einer Kohlenstoffnanoröhrchen-Lötmittel-Kompositpaste, Verwendung dieser als Zwischenverbindung in Baugruppen und Baugruppe
PCT/US2006/046889 WO2007120228A2 (en) 2005-12-20 2006-12-07 Carbon nanotubes solder composite for high performance interconnect
CN2006800431186A CN101313397B (zh) 2005-12-20 2006-12-07 用于高性能互连的碳纳米管钎料复合材料
TW095146428A TWI333688B (en) 2005-12-20 2006-12-12 Carbon nanotubes solder composite for high performance interconnect
US12/690,052 US8100314B2 (en) 2005-12-20 2010-01-19 Carbon nanotubes solder composite for high performance interconnect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/313,344 US20070145097A1 (en) 2005-12-20 2005-12-20 Carbon nanotubes solder composite for high performance interconnect

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/690,052 Division US8100314B2 (en) 2005-12-20 2010-01-19 Carbon nanotubes solder composite for high performance interconnect

Publications (1)

Publication Number Publication Date
US20070145097A1 true US20070145097A1 (en) 2007-06-28

Family

ID=38192428

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/313,344 Abandoned US20070145097A1 (en) 2005-12-20 2005-12-20 Carbon nanotubes solder composite for high performance interconnect
US12/690,052 Expired - Fee Related US8100314B2 (en) 2005-12-20 2010-01-19 Carbon nanotubes solder composite for high performance interconnect

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/690,052 Expired - Fee Related US8100314B2 (en) 2005-12-20 2010-01-19 Carbon nanotubes solder composite for high performance interconnect

Country Status (6)

Country Link
US (2) US20070145097A1 (zh)
JP (1) JP5031764B2 (zh)
CN (1) CN101313397B (zh)
DE (1) DE112006003438B4 (zh)
TW (1) TWI333688B (zh)
WO (1) WO2007120228A2 (zh)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080017981A1 (en) * 2006-05-26 2008-01-24 Nano-Proprietary, Inc. Compliant Bumps for Integrated Circuits Using Carbon Nanotubes
US20080078813A1 (en) * 2006-09-29 2008-04-03 Chi-Won Hwang Carbon nanotube-reinforced solder caps, methods of assembling same, and chip packages and systems containing same
US20080239620A1 (en) * 2007-03-30 2008-10-02 Yongki Min Carbon nanotube coated capacitor electrodes
US20090308650A1 (en) * 2008-06-13 2009-12-17 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method of manufacturing the same
US20100006625A1 (en) * 2008-07-10 2010-01-14 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
WO2015044025A1 (en) * 2013-09-30 2015-04-02 Empa Eidgenössische Materialprüfungs- Und Forschungsanstalt Brazing joining method of cnt assemblies on substrates using an at least ternary brazing alloy; corresponding brazing material and device comprising such assembly
JP2015164896A (ja) * 2009-11-25 2015-09-17 タイコ エレクトロニクス アンプ ゲゼルシャフト ミット ベシュレンクテル ハウツンク 金属または合金コーティングへの炭素／錫混合物の適用方法
CN106363315A (zh) * 2016-10-26 2017-02-01 亿铖达焊锡制造（昆山）有限公司 一种镀锡碳纳米材料增强复合焊料合金及其焊膏
CN112122826A (zh) * 2020-09-18 2020-12-25 衢州学院 钎焊钛基复合材料与氮化硅陶瓷的焊膏及其方法和应用
CN113492277A (zh) * 2020-03-19 2021-10-12 江苏奥匠新材料科技有限公司 一种具有金属镀层碳纳米管增强的低温锡膏材料及其制备方法
WO2022132895A3 (en) * 2020-12-16 2022-07-28 Carbice Corporation Solder-carbon nanostructure composites and methods of making and using thereof

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101653877B (zh) * 2009-08-25 2011-08-10 深圳市亿铖达工业有限公司 纳米增强无铅焊料的制备方法
CN101894773B (zh) * 2009-11-30 2011-10-26 上海上大瑞沪微系统集成技术有限公司 碳纳米管凸点的制备方法
KR101084571B1 (ko) * 2010-04-22 2011-11-17 한국생산기술연구원 탄소나노튜브 분사 방식의 탄소나노튜브 복합 솔더볼 제조방법 및 이를 이용한 솔더페이스트 제조방법
US8167190B1 (en) 2011-05-06 2012-05-01 Lockheed Martin Corporation Electrically conductive polymer compositions containing metal particles and a graphene and methods for production and use thereof
CN102581504B (zh) * 2012-03-23 2014-07-30 天津大学 石墨烯增强无铅焊料及其制备方法
KR20130125220A (ko) * 2012-05-08 2013-11-18 엘에스산전 주식회사 태양 전지 모듈 및 이의 제조 방법
US9293233B2 (en) 2013-02-11 2016-03-22 Tyco Electronics Corporation Composite cable
CN104416296A (zh) * 2013-09-03 2015-03-18 天津大学 一种增强焊料互联焊点抗电迁移性能的方法和应用
US9597744B2 (en) 2013-11-11 2017-03-21 Siemens Energy, Inc. Method for utilizing a braze material with carbon structures
US9446480B2 (en) 2014-03-10 2016-09-20 Siemens Energy, Inc. Reinforced cladding
KR101671062B1 (ko) * 2014-08-18 2016-10-31 주식회사 경동원 무연 솔더 합금 조성물 및 무연 솔더 합금의 제조 방법
KR101654523B1 (ko) * 2014-08-29 2016-09-07 한국기계연구원 혼성 복합 솔더 합금 및 이의 제조방법
CN104400247B (zh) * 2014-09-29 2016-05-11 哈尔滨工业大学 一种高导热石墨烯--Sn-Ag系复合钎料的制备方法
KR101591454B1 (ko) * 2014-10-07 2016-02-03 주식회사 동희홀딩스 금속 및 산화물로 하이브리드 코팅된 나노카본의 제조방법
CN105478944A (zh) * 2015-12-28 2016-04-13 哈尔滨工业大学 一种碳纳米管辅助钎焊硬质合金和钢的方法
KR102491574B1 (ko) 2016-02-29 2023-01-25 삼성전자주식회사 반도체 패키지의 제조 방법
CN106011515B (zh) * 2016-06-20 2017-12-12 山东建筑大学 一种制备碳纳米管粉末增强锡铅合金的方法
DE102017209554A1 (de) 2017-05-30 2018-12-06 Robert Bosch Gmbh Kontaktanordnung, Verbundfolie und Ausbildung eines Verbundwerkstoffes
CN109321143A (zh) * 2018-08-28 2019-02-12 上海大学 垂直碳纳米管阵列与纳米银浆复合互连材料及其制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699763A (en) * 1986-06-25 1987-10-13 Westinghouse Electric Corp. Circuit breaker contact containing silver and graphite fibers
US20030077478A1 (en) * 2001-10-18 2003-04-24 Dani Ashay A. Thermal interface material and electronic assembly having such a thermal interface material
US20030089892A1 (en) * 2001-11-13 2003-05-15 Fox Richard T. Electrically conductive thermoplastic polymer composition
US20040151885A1 (en) * 2003-02-04 2004-08-05 Saikumar Jayaraman Polymer matrices for polymer solder hybrid materials
US20040262779A1 (en) * 2003-04-17 2004-12-30 Masazumi Amagai Lead-free solder
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
US20050075443A1 (en) * 2003-07-23 2005-04-07 Nissin Kogyo Co., Ltd. Carbon fiber composite material and method of producing the same, formed product of carbon fiber composite and method of producing the same, carbon fiber-metal composite material and method of producing the same, and formed product of carbon fiber-metal composite and method of producing the same
US20050139642A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US6919063B2 (en) * 2002-06-28 2005-07-19 Dong Woon International Co., Ltd. Carbon nano-particle and method of preparing the same and transparent conductive polymer composite containing the same
US20050161489A1 (en) * 2004-01-22 2005-07-28 Pikulski Joseph L. Microparticle loaded solder preform allowing bond site control of device spacing at micron, submicron, and nanostructure scale
US20060067852A1 (en) * 2004-09-29 2006-03-30 Daewoong Suh Low melting-point solders, articles made thereby, and processes of making same
US7125502B2 (en) * 2001-07-06 2006-10-24 William Marsh Rice University Fibers of aligned single-wall carbon nanotubes and process for making the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2005200A (en) * 1933-03-17 1935-06-18 Thomas F O'gorman Mold for brick-faced blocks
FR2731106A1 (fr) * 1995-02-27 1996-08-30 Schneider Electric Sa Procede de fabrication d'un materiau de contact electrique composite
US6283812B1 (en) 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6864571B2 (en) * 2003-07-07 2005-03-08 Gelcore Llc Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
JP4412052B2 (ja) * 2003-10-28 2010-02-10 富士ゼロックス株式会社 複合材およびその製造方法
JPWO2005070825A1 (ja) * 2004-01-21 2007-12-27 有限会社サンサーラコーポレーション カーボンナノチューブ含有２次マトリックスコンポジット
TWI393226B (zh) 2004-11-04 2013-04-11 Taiwan Semiconductor Mfg 基於奈米管之填充物
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
US7600667B2 (en) * 2006-09-29 2009-10-13 Intel Corporation Method of assembling carbon nanotube reinforced solder caps
US7758916B2 (en) * 2006-11-13 2010-07-20 Sulzer Metco (Us), Inc. Material and method of manufacture of a solder joint with high thermal conductivity and high electrical conductivity

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699763A (en) * 1986-06-25 1987-10-13 Westinghouse Electric Corp. Circuit breaker contact containing silver and graphite fibers
US7125502B2 (en) * 2001-07-06 2006-10-24 William Marsh Rice University Fibers of aligned single-wall carbon nanotubes and process for making the same
US20030077478A1 (en) * 2001-10-18 2003-04-24 Dani Ashay A. Thermal interface material and electronic assembly having such a thermal interface material
US20030089892A1 (en) * 2001-11-13 2003-05-15 Fox Richard T. Electrically conductive thermoplastic polymer composition
US6919063B2 (en) * 2002-06-28 2005-07-19 Dong Woon International Co., Ltd. Carbon nano-particle and method of preparing the same and transparent conductive polymer composite containing the same
US20040151885A1 (en) * 2003-02-04 2004-08-05 Saikumar Jayaraman Polymer matrices for polymer solder hybrid materials
US20040262779A1 (en) * 2003-04-17 2004-12-30 Masazumi Amagai Lead-free solder
US20050075443A1 (en) * 2003-07-23 2005-04-07 Nissin Kogyo Co., Ltd. Carbon fiber composite material and method of producing the same, formed product of carbon fiber composite and method of producing the same, carbon fiber-metal composite material and method of producing the same, and formed product of carbon fiber-metal composite and method of producing the same
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
US20050139642A1 (en) * 2003-12-30 2005-06-30 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US20050161489A1 (en) * 2004-01-22 2005-07-28 Pikulski Joseph L. Microparticle loaded solder preform allowing bond site control of device spacing at micron, submicron, and nanostructure scale
US20060067852A1 (en) * 2004-09-29 2006-03-30 Daewoong Suh Low melting-point solders, articles made thereby, and processes of making same

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080017981A1 (en) * 2006-05-26 2008-01-24 Nano-Proprietary, Inc. Compliant Bumps for Integrated Circuits Using Carbon Nanotubes
US20080078813A1 (en) * 2006-09-29 2008-04-03 Chi-Won Hwang Carbon nanotube-reinforced solder caps, methods of assembling same, and chip packages and systems containing same
US7600667B2 (en) * 2006-09-29 2009-10-13 Intel Corporation Method of assembling carbon nanotube reinforced solder caps
US8391016B2 (en) 2006-09-29 2013-03-05 Intel Corporation Carbon nanotube-reinforced solder caps, and chip packages and systems containing same
US20100084764A1 (en) * 2006-09-29 2010-04-08 Chi-Won Hwang Carbon nanotube-reinforced solder caps, methods of assembling same, and chip packages and systems containing same
US7710709B2 (en) 2007-03-30 2010-05-04 Intel Corporation Carbon nanotube coated capacitor electrodes
US20080239620A1 (en) * 2007-03-30 2008-10-02 Yongki Min Carbon nanotube coated capacitor electrodes
US20090308650A1 (en) * 2008-06-13 2009-12-17 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method of manufacturing the same
US20100006625A1 (en) * 2008-07-10 2010-01-14 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
US8420722B2 (en) * 2008-07-10 2013-04-16 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
US8802760B2 (en) 2008-07-10 2014-08-12 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
US9155236B2 (en) 2008-07-10 2015-10-06 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
US9462736B2 (en) 2008-07-10 2016-10-04 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
JP2015164896A (ja) * 2009-11-25 2015-09-17 タイコ エレクトロニクス アンプ ゲゼルシャフト ミット ベシュレンクテル ハウツンク 金属または合金コーティングへの炭素／錫混合物の適用方法
WO2015044025A1 (en) * 2013-09-30 2015-04-02 Empa Eidgenössische Materialprüfungs- Und Forschungsanstalt Brazing joining method of cnt assemblies on substrates using an at least ternary brazing alloy; corresponding brazing material and device comprising such assembly
CN106363315A (zh) * 2016-10-26 2017-02-01 亿铖达焊锡制造（昆山）有限公司 一种镀锡碳纳米材料增强复合焊料合金及其焊膏
CN113492277A (zh) * 2020-03-19 2021-10-12 江苏奥匠新材料科技有限公司 一种具有金属镀层碳纳米管增强的低温锡膏材料及其制备方法
CN112122826A (zh) * 2020-09-18 2020-12-25 衢州学院 钎焊钛基复合材料与氮化硅陶瓷的焊膏及其方法和应用
WO2022132895A3 (en) * 2020-12-16 2022-07-28 Carbice Corporation Solder-carbon nanostructure composites and methods of making and using thereof

Also Published As

Publication number Publication date
TW200737466A (en) 2007-10-01
CN101313397B (zh) 2013-02-06
JP5031764B2 (ja) 2012-09-26
WO2007120228A3 (en) 2008-03-13
WO2007120228A2 (en) 2007-10-25
DE112006003438B4 (de) 2017-03-16
TWI333688B (en) 2010-11-21
JP2009519136A (ja) 2009-05-14
DE112006003438T5 (de) 2009-02-19
CN101313397A (zh) 2008-11-26
US8100314B2 (en) 2012-01-24
US20100126631A1 (en) 2010-05-27

Similar Documents

Publication Publication Date Title
US8100314B2 (en) Carbon nanotubes solder composite for high performance interconnect
US7846769B2 (en) Stratified underfill method for an IC package
US5976393A (en) Method of manufacturing multilayer circuit substrate
US20040087057A1 (en) Method for fabricating a flip chip package with pillar bump and no flow underfill
US9935044B2 (en) Semiconductor packaging and manufacturing method thereof
US20080081386A1 (en) Through-die metal vias with a dispersed phase of graphitic structures of carbon for reduced thermal expansion and increased electrical conductance
TW200527566A (en) Methods of forming solder areas on electronic components and electronic components having solder areas
KR101244396B1 (ko) 은피복 볼 및 그 제조 방법
Gan et al. Pb-free microjoints (50/spl mu/m pitch) for the next generation microsystems: the fabrication, assembly and characterization
Kim et al. Isothermal aging characteristics of Sn–Pb micro solder bumps
US10217687B2 (en) Semiconductor device and manufacturing method thereof
De Preter et al. 3D stacking of Co-and Ni-based microbumps
Hu et al. A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer
US7494924B2 (en) Method for forming reinforced interconnects on a substrate
JP5003551B2 (ja) ペースト用Ｐｂ−Ｓｎはんだ合金粉末およびＰｂ−Ｓｎはんだ合金ボール
Li et al. Isotropically conductive adhesives (ICAs)
JP4533724B2 (ja) 接続バンプの形成方法および半導体装置の製造方法
US20050014310A1 (en) Stencil mask design method and under bump metallurgy for C4 solder bump
US20060046434A1 (en) Method for reducing lead precipitation during wafer processing
JP2009194357A (ja) 半導体装置およびその製造方法
Sha et al. 15μm Silver flip-chip technology with solid-state bonding
Bakir et al. Chip integration of Sea of Leads compliant I/O interconnections for the ultimate enabling of chips with low-k interlayer dielectrics
Kripesh et al. Ultra-fine pitch Pb-free & eutectic solder bumping with fine particle size solder paste for nano packaging
Yu et al. Aging treatment characteristics of shear strength in micro solder bump
Yaakup et al. Stencil Printing Technique for Micro-Solder Bumps Patterning

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTEL CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SUH, DAEWOONG;REEL/FRAME:017363/0923

Effective date: 20051219

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION