TW200734716A - Manufacture method of pixel array substrate - Google Patents

Manufacture method of pixel array substrate

Info

Publication number
TW200734716A
TW200734716A TW095107556A TW95107556A TW200734716A TW 200734716 A TW200734716 A TW 200734716A TW 095107556 A TW095107556 A TW 095107556A TW 95107556 A TW95107556 A TW 95107556A TW 200734716 A TW200734716 A TW 200734716A
Authority
TW
Taiwan
Prior art keywords
data line
electrically connected
line patterns
array substrate
pixel array
Prior art date
Application number
TW095107556A
Other languages
English (en)
Other versions
TWI322288B (en
Inventor
Ming-Hung Shih
Original Assignee
Quanta Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quanta Display Inc filed Critical Quanta Display Inc
Priority to TW095107556A priority Critical patent/TWI322288B/zh
Priority to US11/444,058 priority patent/US7599014B2/en
Priority to KR1020060065241A priority patent/KR100811685B1/ko
Priority to JP2006299403A priority patent/JP4833799B2/ja
Publication of TW200734716A publication Critical patent/TW200734716A/zh
Application granted granted Critical
Publication of TWI322288B publication Critical patent/TWI322288B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095107556A 2006-03-07 2006-03-07 Manufacture method of pixel array substrate TWI322288B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW095107556A TWI322288B (en) 2006-03-07 2006-03-07 Manufacture method of pixel array substrate
US11/444,058 US7599014B2 (en) 2006-03-07 2006-05-31 Method for fabricating pixel array substrate
KR1020060065241A KR100811685B1 (ko) 2006-03-07 2006-07-12 픽셀 어레이 기판
JP2006299403A JP4833799B2 (ja) 2006-03-07 2006-11-02 画素アレイ基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095107556A TWI322288B (en) 2006-03-07 2006-03-07 Manufacture method of pixel array substrate

Publications (2)

Publication Number Publication Date
TW200734716A true TW200734716A (en) 2007-09-16
TWI322288B TWI322288B (en) 2010-03-21

Family

ID=38532997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107556A TWI322288B (en) 2006-03-07 2006-03-07 Manufacture method of pixel array substrate

Country Status (4)

Country Link
US (1) US7599014B2 (zh)
JP (1) JP4833799B2 (zh)
KR (1) KR100811685B1 (zh)
TW (1) TWI322288B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455207B (zh) * 2007-10-23 2014-10-01 Semiconductor Energy Lab 半導體裝置的製造方法
TWI468822B (zh) * 2008-05-21 2015-01-11 Lg Display Co Ltd 液晶顯示裝置及其製造方法

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JP3227353B2 (ja) * 1995-07-13 2001-11-12 東芝セラミックス株式会社 炭化珪素膜被覆部材及びその製造方法
KR100875101B1 (ko) * 2007-08-08 2008-12-19 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 유기 발광 표시장치의 제조방법
KR101448903B1 (ko) * 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP5427390B2 (ja) * 2007-10-23 2014-02-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5380037B2 (ja) 2007-10-23 2014-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7824939B2 (en) * 2007-10-23 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device comprising separated and electrically connected source wiring layers
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI371640B (en) 2008-01-25 2012-09-01 Au Optronics Corp Pixel structure and method for manufacturing the same
US8035107B2 (en) * 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
CN101939694B (zh) 2008-02-27 2014-01-29 株式会社半导体能源研究所 液晶显示器件及其制造方法以及电子装置
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) * 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7989275B2 (en) * 2008-03-10 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US7985605B2 (en) * 2008-04-17 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US7790483B2 (en) * 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US20100138765A1 (en) * 2008-11-30 2010-06-03 Nokia Corporation Indicator Pop-Up
TWI392057B (zh) * 2009-01-23 2013-04-01 Au Optronics Corp 薄膜電晶體陣列基板及其製造方法
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) * 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5539765B2 (ja) * 2009-03-26 2014-07-02 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR101110239B1 (ko) * 2009-06-17 2012-05-30 (주)테스티안 포인트 접지체
TWI413041B (zh) * 2009-12-30 2013-10-21 Wintek Corp 顯示面板
WO2012046658A1 (ja) * 2010-10-07 2012-04-12 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置および表示装置の製造方法
US8927308B2 (en) * 2011-05-12 2015-01-06 Universal Display Corporation Method of forming bus line designs for large-area OLED lighting
KR101960813B1 (ko) * 2011-10-31 2019-03-22 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
JP6122275B2 (ja) * 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
TWI575577B (zh) * 2011-11-15 2017-03-21 友達光電股份有限公司 畫素結構及畫素結構的製造方法
KR101975263B1 (ko) * 2012-02-07 2019-05-08 삼성디스플레이 주식회사 박막트랜지스터 표시판과 이를 제조하는 방법
US9704888B2 (en) * 2014-01-08 2017-07-11 Apple Inc. Display circuitry with reduced metal routing resistance
CN105137632B (zh) * 2015-09-08 2017-07-04 京东方科技集团股份有限公司 显示面板及显示装置
US10032880B2 (en) * 2016-10-10 2018-07-24 Semiconductor Components Industries, Llc Method for forming ohmic contacts
TWI622834B (zh) * 2017-03-31 2018-05-01 友達光電股份有限公司 畫素陣列基板
CN107589606A (zh) * 2017-09-05 2018-01-16 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
JP7256622B2 (ja) * 2018-09-26 2023-04-12 株式会社ジャパンディスプレイ 表示装置
KR20210052635A (ko) * 2019-10-29 2021-05-11 삼성디스플레이 주식회사 디스플레이 장치
CN111740001B (zh) * 2020-01-20 2022-09-09 绍兴中芯集成电路制造股份有限公司 压电器件及其形成方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455207B (zh) * 2007-10-23 2014-10-01 Semiconductor Energy Lab 半導體裝置的製造方法
TWI468822B (zh) * 2008-05-21 2015-01-11 Lg Display Co Ltd 液晶顯示裝置及其製造方法

Also Published As

Publication number Publication date
TWI322288B (en) 2010-03-21
KR100811685B1 (ko) 2008-03-11
JP2007243144A (ja) 2007-09-20
JP4833799B2 (ja) 2011-12-07
US7599014B2 (en) 2009-10-06
US20070222936A1 (en) 2007-09-27
KR20070092077A (ko) 2007-09-12

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees