TW200729242A - Patterning method of ZnO series transparent conductive film - Google Patents

Patterning method of ZnO series transparent conductive film

Info

Publication number
TW200729242A
TW200729242A TW095148375A TW95148375A TW200729242A TW 200729242 A TW200729242 A TW 200729242A TW 095148375 A TW095148375 A TW 095148375A TW 95148375 A TW95148375 A TW 95148375A TW 200729242 A TW200729242 A TW 200729242A
Authority
TW
Taiwan
Prior art keywords
conductive film
transparent conductive
zno
series transparent
zno series
Prior art date
Application number
TW095148375A
Other languages
English (en)
Inventor
Seiichiro Takahashi
Yasunori Tabira
Hiroki Takahashi
Norihiko Miyashita
Tomoyasu Yano
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200729242A publication Critical patent/TW200729242A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
TW095148375A 2005-12-22 2006-12-22 Patterning method of ZnO series transparent conductive film TW200729242A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005370729 2005-12-22

Publications (1)

Publication Number Publication Date
TW200729242A true TW200729242A (en) 2007-08-01

Family

ID=38188724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148375A TW200729242A (en) 2005-12-22 2006-12-22 Patterning method of ZnO series transparent conductive film

Country Status (5)

Country Link
JP (1) JPWO2007072950A1 (zh)
KR (1) KR100945199B1 (zh)
CN (1) CN100543943C (zh)
TW (1) TW200729242A (zh)
WO (1) WO2007072950A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413271B (zh) * 2009-04-17 2013-10-21 Lg Display Co Ltd 太陽能電池之製造方法
TWI453766B (zh) * 2007-09-05 2014-09-21 Murata Manufacturing Co Preparation method of transparent conductive film and transparent conductive film

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816250B2 (ja) * 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
JP2008047645A (ja) * 2006-08-11 2008-02-28 Tosoh Corp 透明電極のエッチング液及びエッチング方法
JP2008159814A (ja) * 2006-12-22 2008-07-10 Mitsui Mining & Smelting Co Ltd 酸化亜鉛系薄膜用エッチャント及び酸化亜鉛系薄膜のパターニング方法
JP7420040B2 (ja) 2020-09-30 2024-01-23 住友金属鉱山株式会社 界面構造探索方法
JP7420039B2 (ja) 2020-09-30 2024-01-23 住友金属鉱山株式会社 界面構造探索方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292622A (ja) * 1985-10-18 1987-04-28 Nippon Telegr & Teleph Corp <Ntt> フレ−ム間符号化方法
JPS62154411A (ja) * 1985-12-26 1987-07-09 三井金属鉱業株式会社 透明導電膜
JPH04256317A (ja) * 1991-02-08 1992-09-11 Sharp Corp 半導体基板のエッチング方法
JPH0845352A (ja) * 1994-08-02 1996-02-16 Sekisui Chem Co Ltd 透明導電体
KR100432647B1 (ko) * 2001-04-19 2004-05-22 삼성에스디아이 주식회사 투명 도전막의 보호막 형성용 조성물 및 이로부터 보호막을 제조하는 방법
KR100783608B1 (ko) * 2002-02-26 2007-12-07 삼성전자주식회사 인듐징크옥사이드 식각액 조성물 및 이를 이용한 액정표시 장치의 박막 트랜지스터 기판의 제조방법
JP2005197608A (ja) * 2004-01-09 2005-07-21 Mitsubishi Heavy Ind Ltd 光電変換装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453766B (zh) * 2007-09-05 2014-09-21 Murata Manufacturing Co Preparation method of transparent conductive film and transparent conductive film
TWI413271B (zh) * 2009-04-17 2013-10-21 Lg Display Co Ltd 太陽能電池之製造方法

Also Published As

Publication number Publication date
JPWO2007072950A1 (ja) 2009-06-04
CN101258584A (zh) 2008-09-03
KR100945199B1 (ko) 2010-03-03
KR20080036048A (ko) 2008-04-24
CN100543943C (zh) 2009-09-23
WO2007072950A1 (ja) 2007-06-28

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