TW200726798A - Coated substrates and methods for their preparation - Google Patents

Coated substrates and methods for their preparation

Info

Publication number
TW200726798A
TW200726798A TW095136601A TW95136601A TW200726798A TW 200726798 A TW200726798 A TW 200726798A TW 095136601 A TW095136601 A TW 095136601A TW 95136601 A TW95136601 A TW 95136601A TW 200726798 A TW200726798 A TW 200726798A
Authority
TW
Taiwan
Prior art keywords
coated substrates
methods
preparation
coating
interfacial
Prior art date
Application number
TW095136601A
Other languages
English (en)
Inventor
John Dean Albaugh
Dong Choi
William Weidner
Robert Charles Camilletti
Masaaki Amako
Ludmil Zambov
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of TW200726798A publication Critical patent/TW200726798A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/042—Coating with two or more layers, where at least one layer of a composition contains a polymer binder
    • C08J7/0423—Coating with two or more layers, where at least one layer of a composition contains a polymer binder with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/048—Forming gas barrier coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Electroluminescent Light Sources (AREA)
TW095136601A 2005-10-05 2006-10-02 Coated substrates and methods for their preparation TW200726798A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72368805P 2005-10-05 2005-10-05

Publications (1)

Publication Number Publication Date
TW200726798A true TW200726798A (en) 2007-07-16

Family

ID=37814113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136601A TW200726798A (en) 2005-10-05 2006-10-02 Coated substrates and methods for their preparation

Country Status (6)

Country Link
US (1) US20090130463A1 (zh)
EP (2) EP2154183A1 (zh)
JP (1) JP2009511290A (zh)
CN (1) CN101313392B (zh)
TW (1) TW200726798A (zh)
WO (1) WO2007044181A2 (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007123926A2 (en) * 2006-04-18 2007-11-01 Dow Corning Corporation Metal foil substrates coated with condensation cured silicon resin compositions
JP2010514139A (ja) * 2006-12-20 2010-04-30 ダウ・コーニング・コーポレイション 陽イオン感受性層を含む複合品
KR20090107882A (ko) * 2008-04-10 2009-10-14 삼성전자주식회사 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법
JP5520528B2 (ja) * 2008-07-10 2014-06-11 東レ・ダウコーニング株式会社 ガスバリアー性硬化オルガノポリシロキサン樹脂フィルム及びその製造方法
DE112009002023T5 (de) * 2008-08-19 2011-06-30 Lintec Corp. Geformter Gegenstand, Verfahren zur Herstellung desselben, elektronisches Vorrichtungsteil und elektronische Vorrichtung
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
JP5808523B2 (ja) * 2008-09-30 2015-11-10 凸版印刷株式会社 反射防止フィルム
JP4863024B2 (ja) * 2008-11-10 2012-01-25 信越化学工業株式会社 ガスバリア膜形成用組成物、ガスバリア性積層体及びそれを用いた成形体
JP5666311B2 (ja) * 2008-12-12 2015-02-12 リンテック株式会社 積層体、その製造方法、電子デバイス部材および電子デバイス
KR20100071650A (ko) * 2008-12-19 2010-06-29 삼성전자주식회사 가스차단성박막, 이를 포함하는 전자소자 및 이의 제조방법
JP5379530B2 (ja) 2009-03-26 2013-12-25 リンテック株式会社 成形体、その製造方法、電子デバイス用部材および電子デバイス
JP5704610B2 (ja) 2009-05-22 2015-04-22 リンテック株式会社 成形体、その製造方法、電子デバイス用部材および電子デバイス
JP2013516337A (ja) * 2010-01-07 2013-05-13 東レ・ダウコーニング株式会社 ガスバリアー性硬化オルガノポリシロキサン樹脂フィルム及びその製造方法
JP5697230B2 (ja) 2010-03-31 2015-04-08 リンテック株式会社 成形体、その製造方法、電子デバイス用部材及び電子デバイス
US9254506B2 (en) * 2010-07-02 2016-02-09 3M Innovative Properties Company Moisture resistant coating for barrier films
KR101913870B1 (ko) 2010-07-02 2018-10-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 배리어 조립체
KR20120008360A (ko) * 2010-07-16 2012-01-30 삼성모바일디스플레이주식회사 플렉서블 디스플레이용 기판 및 그 제조 방법
US9556513B2 (en) 2010-08-20 2017-01-31 Lintec Corporation Molding, production method therefor, part for electronic devices and electronic device
TWI535561B (zh) 2010-09-21 2016-06-01 Lintec Corp A molded body, a manufacturing method thereof, an electronic device element, and an electronic device
TWI457235B (zh) 2010-09-21 2014-10-21 Lintec Corp A gas barrier film, a manufacturing method thereof, an electronic device element, and an electronic device
CN102468352A (zh) * 2010-11-01 2012-05-23 武汉美格能源科技有限公司 一种高阻隔柔性背膜
CN102340900A (zh) * 2011-07-21 2012-02-01 佛山市海辰科技有限公司 基于ir-led陶瓷基板的稀土厚膜电路电热元件及其制备方法
WO2013122055A1 (ja) * 2012-02-15 2013-08-22 コニカミノルタ株式会社 機能性フィルム、およびその製造方法、並びに前記機能性フィルムを含む電子デバイス
US10787591B2 (en) 2012-04-30 2020-09-29 The Boeing Company Composites including silicon-oxy-carbide layers and methods of making the same
SG11201500946SA (en) * 2012-08-08 2015-03-30 3M Innovative Properties Co Articles including a (co)polymer reaction product of a urethane (multi)-(meth)acrylate (multi)-silane
TWI610806B (zh) 2012-08-08 2018-01-11 ３Ｍ新設資產公司 障壁膜，製造該障壁膜之方法，及包含該障壁膜之物件
CN105102216B (zh) * 2013-03-29 2017-09-29 琳得科株式会社 层叠体及其制造方法、电子设备用部件、以及电子设备
WO2015099461A1 (ko) * 2013-12-24 2015-07-02 네오뷰코오롱 주식회사 유기전계발광소자
EP3161881A4 (en) * 2014-06-25 2018-02-21 Dow Corning Corporation Layered polymer structures and methods
CN112349795B (zh) * 2020-10-27 2022-03-25 嘉兴学院 一种表面吸附锂离子的范德华异质结光电二极管器件结构

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314958A (en) * 1980-07-22 1982-02-09 Phillips Petroleum Company Plastic pipe extrusion
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
US4568566A (en) * 1984-10-30 1986-02-04 General Electric Company Acrylic-functional silicone resin compositions
JP2544018B2 (ja) * 1990-10-22 1996-10-16 信越化学工業株式会社 紫外線硬化性オルガノポリシロキサン組成物
JP2755844B2 (ja) * 1991-09-30 1998-05-25 シャープ株式会社 プラスチック基板液晶表示素子
JP2511348B2 (ja) * 1991-10-17 1996-06-26 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンおよびその製造方法
JP3161786B2 (ja) * 1991-11-20 2001-04-25 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンおよびその製造方法
JP3367964B2 (ja) * 1992-04-21 2003-01-20 東レ・ダウコーニング・シリコーン株式会社 硬化性樹脂組成物
JP3786139B2 (ja) 1992-05-26 2006-06-14 東レ・ダウコーニング株式会社 硬化性シリコーン組成物
US5861467A (en) * 1993-05-18 1999-01-19 Dow Corning Corporation Radiation curable siloxane compositions containing vinyl ether functionality and methods for their preparation
MY111521A (en) * 1993-06-21 2000-07-31 Atochem North America Elf A method for strengthening a brittle oxide substrate, silane-based compositions, and a polymerized cross- linked siloxane coated brittle oxide substrate
JP3406646B2 (ja) * 1993-06-29 2003-05-12 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンおよびその製造方法
JP2541494B2 (ja) * 1993-12-15 1996-10-09 日本電気株式会社 半導体装置
US5468826A (en) 1994-05-10 1995-11-21 Dow Corning Corporation Adhesion promoting additives and curable organosiloxane compositions containing same
DE69630829T2 (de) * 1995-02-02 2004-09-23 Teijin Ltd. Transparentes leitfähiges Flächenmaterial
US5738976A (en) * 1995-03-16 1998-04-14 Shin-Etsu Chemical Co., Ltd. Photo-curable organopolysiloxane composition and a method for producing a (meth) acryloyloxyl group-containing organopolysiloxane used therein
JP3199598B2 (ja) * 1995-03-16 2001-08-20 信越化学工業株式会社 （メタ）アクリロイルオキシル基含有オルガノポリシロキサンの製造方法
US5824761A (en) * 1995-05-18 1998-10-20 Dow Corning Corporation Radiation curable compositions containing vinyl ether functionality and methods for their preparation
WO1997013802A1 (en) * 1995-10-13 1997-04-17 The Dow Chemical Company Coated plastic substrate
JP3730317B2 (ja) * 1996-05-30 2006-01-05 東レ・ダウコーニング株式会社 人工大理石用熱硬化性樹脂組成物および人工大理石
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JPH11302598A (ja) * 1998-04-23 1999-11-02 Nikon Corp コーティング組成物及びコーティング組成物が塗布された成型体及びその製造方法
US6069185A (en) * 1998-11-25 2000-05-30 Dow Corning Asia, Ltd. Radiation curable compositions containing alkenyl ether functional polyisobutylenes
JP2000227603A (ja) * 1998-11-30 2000-08-15 Teijin Ltd 液晶表示素子及びそれに好適な透明導電性基板
US6136044A (en) * 1999-02-03 2000-10-24 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Stable coloring by in situ formation of micro-particles
TWI226205B (en) * 2000-03-27 2005-01-01 Semiconductor Energy Lab Self-light emitting device and method of manufacturing the same
US6465550B1 (en) * 2000-08-08 2002-10-15 Dow Corning Corporation Silicone composition and electrically conductive, cured silicone product
US6570352B2 (en) 2000-11-17 2003-05-27 Nsk Ltd. Control unit for electric power steering apparatus
AU2002305393A1 (en) 2001-05-04 2002-11-18 General Atomics O2 and h2o barrier material
EP1419286A1 (en) 2001-08-20 2004-05-19 Nova-Plasma Inc. Coatings with low permeation of gases and vapors
US20030203210A1 (en) * 2002-04-30 2003-10-30 Vitex Systems, Inc. Barrier coatings and methods of making same
EP1388593B1 (de) * 2002-08-07 2015-12-30 Schott AG Schnelles Verfahren zur Herstellung von Mehrfachlagen-Barriereschichten
US7399500B2 (en) 2002-08-07 2008-07-15 Schott Ag Rapid process for the production of multilayer barrier layers
US7288311B2 (en) * 2003-02-10 2007-10-30 Dai Nippon Printing Co., Ltd. Barrier film
JP2006519473A (ja) * 2003-03-04 2006-08-24 ダウ・コーニング・コーポレイション 有機発光ダイオード
JP2004361692A (ja) * 2003-04-07 2004-12-24 Dow Corning Asia Ltd 光伝送部材用硬化性オルガノポリシロキサン樹脂組成物、オルガノポリシロキサン樹脂硬化物からなる光伝送部材および光伝送部材の製造方法
JP4227040B2 (ja) * 2004-03-03 2009-02-18 富士フイルム株式会社 ガスバリア性積層フィルムおよび該フィルムを用いた画像表示素子

Also Published As

Publication number Publication date
WO2007044181A2 (en) 2007-04-19
CN101313392A (zh) 2008-11-26
EP1963409A2 (en) 2008-09-03
US20090130463A1 (en) 2009-05-21
WO2007044181A3 (en) 2007-11-01
JP2009511290A (ja) 2009-03-19
CN101313392B (zh) 2011-03-16
EP2154183A1 (en) 2010-02-17

Similar Documents

Publication Publication Date Title
TW200726798A (en) Coated substrates and methods for their preparation
TW200746373A (en) Electronic package and method of preparing same
WO2008018981A3 (en) Silicone resin and silicone composition
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2006060146A3 (en) Chromium free corrosion resistant surface treatments using siliconized barrier coatings
WO2009120548A3 (en) Multilayer articles and methods of making and using the same
TWI370160B (en) Conductive polymer coating composition, method of preparing coating film using the conductive polymer coating composition, and coating film prepared using the method
EP2133200A4 (en) A RESIN FILM RECEIVING A CONDUCTIVE SUBSTANCE, METHOD FOR PRODUCING A RESIN FILM RECEIVING A CONDUCTIVE SUBSTANCE, A RESIN FILM COATED WITH A METAL LAYER AND PRODUCED THEREOF, AND METHOD FOR PRODUCING A RESIN FILM COATED WITH A METAL LAYER
WO2009009628A3 (en) Endoprosthesis coating
AU2003214052A1 (en) Self-adhesive, addition cross-linking silicone-rubber blends, method for their production, method for producing composite moulded parts and use of the latter
AR064412A1 (es) Curativo de triamina/aspartato y recubrimientos que lo incluyen
WO2009009627A3 (en) Endoprosthesis coating
EP1749860A4 (en) FREE FILMS MANUFACTURED FROM ORGANOPOLYSILOXANE RESINS, THEIR PRODUCTION PROCESS AND LAMINATED FILMS
HK1138031A1 (en) Silicone resin containing coating compositions, related coated substrates and methods
SG156665A1 (en) Curable organopolysiloxane composition and antifouling composite coating film
WO2005053571A3 (en) Biobeneficial coating compositions and methods of making and using thereof
AU2003280750A1 (en) Actinic radiation curable coating composition and molded articles having coating films made from the composition through curing
TW200740938A (en) Can coatings, methods for coating can and cans coated thereby
WO2007097835A3 (en) Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
AU2003248098A8 (en) Photocatalyst-containing silicone resin composition, and coated article having cured coating film therefrom
TW200720379A (en) Release coating containing thermoplastic polymers
TW200639204A (en) Polarizing layer with adherent protective layer
MX2010003852A (es) Composiciones de revestimiento curables por radiacion, revestimientos y metodos relacionados.
TW200637885A (en) A composition, method of authenticating, methods of making authenticatable compositions, authenticatable articles made there from
WO2004071765A3 (en) Paper release compositions having improved adhesion to paper and polymeric films