TW200721515A - Photovoltaic contact and wiring formation - Google Patents

Photovoltaic contact and wiring formation

Info

Publication number
TW200721515A
TW200721515A TW095141211A TW95141211A TW200721515A TW 200721515 A TW200721515 A TW 200721515A TW 095141211 A TW095141211 A TW 095141211A TW 95141211 A TW95141211 A TW 95141211A TW 200721515 A TW200721515 A TW 200721515A
Authority
TW
Taiwan
Prior art keywords
layer
contact
wiring
metal
sputtering
Prior art date
Application number
TW095141211A
Other languages
English (en)
Inventor
Robert Z Bachrach
Quan-Yuan Shang
Yan Ye
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200721515A publication Critical patent/TW200721515A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
TW095141211A 2005-11-07 2006-11-07 Photovoltaic contact and wiring formation TW200721515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73441005P 2005-11-07 2005-11-07

Publications (1)

Publication Number Publication Date
TW200721515A true TW200721515A (en) 2007-06-01

Family

ID=38509946

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141211A TW200721515A (en) 2005-11-07 2006-11-07 Photovoltaic contact and wiring formation

Country Status (7)

Country Link
US (1) US20070148336A1 (zh)
EP (1) EP1952431A2 (zh)
JP (1) JP2009515369A (zh)
KR (1) KR20080075156A (zh)
CN (1) CN101305454B (zh)
TW (1) TW200721515A (zh)
WO (1) WO2007106180A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404811B (zh) * 2009-05-07 2013-08-11 Atomic Energy Council 金屬氮氧化物薄膜結構之製作方法
TWI425595B (zh) * 2011-01-14 2014-02-01

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560318B2 (en) * 2006-03-13 2009-07-14 Freescale Semiconductor, Inc. Process for forming an electronic device including semiconductor layers having different stresses
US20070298623A1 (en) * 2006-06-26 2007-12-27 Spencer Gregory S Method for straining a semiconductor device
US7479465B2 (en) 2006-07-28 2009-01-20 Freescale Semiconductor, Inc. Transfer of stress to a layer
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
DE102007038744A1 (de) * 2007-08-16 2009-02-19 Deutsche Cell Gmbh Verfahren zur Herstellung eines Halbleiter-Bauelements, Halbleiter-Bauelement sowie Zwischenprodukt bei der Herstellung desselben
CN101842910B (zh) * 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
US7888168B2 (en) * 2007-11-19 2011-02-15 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090139568A1 (en) * 2007-11-19 2009-06-04 Applied Materials, Inc. Crystalline Solar Cell Metallization Methods
US7833808B2 (en) * 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
JP2011524639A (ja) 2008-06-11 2011-09-01 インテバック・インコーポレイテッド 太陽電池装置及び太陽電池素子形成方法
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
US8840701B2 (en) * 2008-08-13 2014-09-23 E I Du Pont De Nemours And Company Multi-element metal powders for silicon solar cells
US8294024B2 (en) * 2008-08-13 2012-10-23 E I Du Pont De Nemours And Company Processes for forming photovoltaic devices
US20100037941A1 (en) * 2008-08-13 2010-02-18 E. I. Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
TWI366919B (en) * 2008-09-19 2012-06-21 Gintech Energy Corp Structure of solar cell and its production method
US20100075261A1 (en) * 2008-09-22 2010-03-25 International Business Machines Corporation Methods for Manufacturing a Contact Grid on a Photovoltaic Cell
US8710355B2 (en) 2008-12-22 2014-04-29 E I Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
GB2467360A (en) * 2009-01-30 2010-08-04 Renewable Energy Corp Asa Contact for a solar cell
US8338220B2 (en) * 2009-02-06 2012-12-25 Applied Materials, Inc. Negatively charged passivation layer in a photovoltaic cell
DE102009008152A1 (de) 2009-02-09 2010-08-19 Nb Technologies Gmbh Siliziumsolarzelle
SG186005A1 (en) * 2009-03-20 2012-12-28 Intevac Inc Advanced high efficiency crystalline solar cell fabrication method
KR101319674B1 (ko) * 2009-05-06 2013-10-17 씬실리콘 코포레이션 광기전 전지 및 반도체층 적층체에서의 광 포획성 향상 방법
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
US20100313942A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic module and method of manufacturing a photovoltaic module having multiple semiconductor layer stacks
DE102009025977A1 (de) * 2009-06-16 2010-12-23 Q-Cells Se Solarzelle und Herstellungsverfahren einer Solarzelle
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US7989346B2 (en) * 2009-07-27 2011-08-02 Adam Letize Surface treatment of silicon
US8779280B2 (en) 2009-08-18 2014-07-15 Lg Electronics Inc. Solar cell and method of manufacturing the same
KR101110825B1 (ko) * 2009-08-18 2012-02-24 엘지전자 주식회사 이면 접합형 태양 전지 및 그 제조 방법
KR101128838B1 (ko) * 2009-08-18 2012-03-23 엘지전자 주식회사 태양 전지 및 그 제조 방법
IN2012DN02167A (zh) * 2009-09-11 2015-08-21 First Solar Inc
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
KR101627377B1 (ko) * 2009-12-09 2016-06-03 엘지전자 주식회사 태양 전지 모듈
US20110277825A1 (en) * 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
KR101702645B1 (ko) 2010-08-18 2017-02-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5379767B2 (ja) * 2010-09-02 2013-12-25 PVG Solutions株式会社 太陽電池セルおよびその製造方法
CA2763142A1 (en) * 2010-09-03 2012-03-03 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9773928B2 (en) * 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
CN102005502B (zh) * 2010-10-15 2012-10-10 苏州阿特斯阳光电力科技有限公司 一种改善太阳能电池磷扩散均匀性的方法
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US20140299182A1 (en) * 2011-04-19 2014-10-09 Schott Solar Ag Method for producing a solar cell
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US8969122B2 (en) * 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
BR112014000359A2 (pt) * 2011-07-08 2019-11-19 General Cable Tech Corp componente de cabo blindado e método para aplicar blindagem a substrato
EP2771184A4 (en) * 2011-10-24 2015-08-05 Reliance Ind Ltd THIN FINISHES AND METHOD FOR THE PRODUCTION THEREOF
MY175007A (en) 2011-11-08 2020-06-02 Intevac Inc Substrate processing system and method
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
US9190323B2 (en) * 2012-01-19 2015-11-17 GlobalFoundries, Inc. Semiconductor devices with copper interconnects and methods for fabricating same
CN103296103A (zh) * 2012-02-29 2013-09-11 日本琵维吉咨询株式会社 太阳能电池单元及其制造方法
TWI552372B (zh) * 2012-08-16 2016-10-01 聯華電子股份有限公司 製作太陽能電池的方法
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
WO2014065465A1 (ko) * 2012-10-25 2014-05-01 한국생산기술연구원 실리콘 기판의 나노 및 마이크로 복합 구조체를 갖는 태양 전지의 제조 방법 및 이에 따른 태양 전지
ES2471568B1 (es) * 2012-11-22 2015-08-21 Abengoa Solar New Technologies S.A. Procedimiento para la creación de contactos eléctricos y contactos así creados
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
SG11201507008UA (en) 2013-03-15 2015-10-29 Sunpower Corp Conductivity enhancement of solar cells
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
JP6300712B2 (ja) * 2014-01-27 2018-03-28 三菱電機株式会社 太陽電池および太陽電池の製造方法
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
EP3093889B8 (en) * 2015-05-13 2024-05-22 Trina Solar Co., Ltd Solar cell and method of manufacturing the same
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US11424373B2 (en) * 2016-04-01 2022-08-23 Sunpower Corporation Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10600928B1 (en) * 2016-09-20 2020-03-24 Apple Inc. Systems with photovoltaic cells
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
CN108039335B (zh) * 2017-12-29 2023-10-13 赛能自动化技术(苏州)有限公司 一种光伏硅片用快速传输的组合系统
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
KR102267611B1 (ko) * 2018-04-03 2021-06-21 한양대학교 에리카산학협력단 태양전지 및 그 제조 방법
CN109545668A (zh) * 2018-11-21 2019-03-29 合肥新汇成微电子有限公司 一种蚀刻制程中的光阻层显影处理方式
GB201916745D0 (en) 2019-11-18 2020-01-01 Cambridge Entpr Ltd Device fabrication techniques

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949463A (en) * 1973-02-13 1976-04-13 Communications Satellite Corporation (Comsat) Method of applying an anti-reflective coating to a solar cell
US4751191A (en) * 1987-07-08 1988-06-14 Mobil Solar Energy Corporation Method of fabricating solar cells with silicon nitride coating
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5824575A (en) * 1994-08-22 1998-10-20 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
FR2743193B1 (fr) * 1996-01-02 1998-04-30 Univ Neuchatel Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
US5926736A (en) * 1996-10-30 1999-07-20 Stmicroelectronics, Inc. Low temperature aluminum reflow for multilevel metallization
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
CA2572503A1 (en) * 1997-04-04 1998-10-15 University Of Southern California Method for electrochemical fabrication including enhanced data manipulation
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
US6614083B1 (en) * 1999-03-17 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Wiring material and a semiconductor device having wiring using the material, and the manufacturing method
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
DE10020541A1 (de) * 2000-04-27 2001-11-08 Univ Konstanz Verfahren zur Herstellung einer Solarzelle und Solarzelle
JP2002057351A (ja) * 2000-08-15 2002-02-22 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法および太陽電池セル
US20020086456A1 (en) * 2000-12-19 2002-07-04 Cunningham Shawn Jay Bulk micromachining process for fabricating an optical MEMS device with integrated optical aperture
DE10107600C1 (de) * 2001-02-17 2002-08-22 Saint Gobain Verfahren zum Betreiben eines photovoltaischen Solarmoduls und photovoltaischer Solarmodul
JP2002368247A (ja) * 2001-06-01 2002-12-20 Canon Inc 太陽電池構造体、太陽電池アレイ及び太陽光発電システム
US6815788B2 (en) * 2001-08-10 2004-11-09 Hitachi Cable Ltd. Crystalline silicon thin film semiconductor device, crystalline silicon thin film photovoltaic device, and process for producing crystalline silicon thin film semiconductor device
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof
US20050189013A1 (en) * 2003-12-23 2005-09-01 Oliver Hartley Process for manufacturing photovoltaic cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404811B (zh) * 2009-05-07 2013-08-11 Atomic Energy Council 金屬氮氧化物薄膜結構之製作方法
TWI425595B (zh) * 2011-01-14 2014-02-01

Also Published As

Publication number Publication date
WO2007106180A3 (en) 2007-12-06
WO2007106180A2 (en) 2007-09-20
JP2009515369A (ja) 2009-04-09
CN101305454A (zh) 2008-11-12
KR20080075156A (ko) 2008-08-14
US20070148336A1 (en) 2007-06-28
CN101305454B (zh) 2010-05-19
EP1952431A2 (en) 2008-08-06

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