TW200713453A - Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen - Google Patents

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

Info

Publication number
TW200713453A
TW200713453A TW095125903A TW95125903A TW200713453A TW 200713453 A TW200713453 A TW 200713453A TW 095125903 A TW095125903 A TW 095125903A TW 95125903 A TW95125903 A TW 95125903A TW 200713453 A TW200713453 A TW 200713453A
Authority
TW
Taiwan
Prior art keywords
oxide
silicon carbide
layers
atomic oxygen
chamber
Prior art date
Application number
TW095125903A
Other languages
English (en)
Inventor
Mrinal K Das
Anant K Agarwal
John W Palmour
Dave Grider
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200713453A publication Critical patent/TW200713453A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW095125903A 2005-09-16 2006-07-14 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen TW200713453A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/229,476 US7572741B2 (en) 2005-09-16 2005-09-16 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

Publications (1)

Publication Number Publication Date
TW200713453A true TW200713453A (en) 2007-04-01

Family

ID=37398849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125903A TW200713453A (en) 2005-09-16 2006-07-14 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

Country Status (7)

Country Link
US (2) US7572741B2 (zh)
EP (2) EP2259290B1 (zh)
JP (1) JP4745396B2 (zh)
CN (1) CN101263586A (zh)
AT (1) ATE524826T1 (zh)
TW (1) TW200713453A (zh)
WO (1) WO2007040709A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007086196A1 (ja) * 2006-01-30 2007-08-02 Sumitomo Electric Industries, Ltd. 炭化珪素半導体装置の製造方法
DE102007005780A1 (de) * 2006-08-10 2008-02-14 Carl Zeiss Smt Ag Verbundstruktur für die Mikrolithographie und optische Anordnung
JP5283147B2 (ja) * 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
JP5540919B2 (ja) * 2010-06-16 2014-07-02 住友電気工業株式会社 炭化珪素半導体の洗浄方法
JP2012004270A (ja) * 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体の洗浄方法、炭化珪素半導体および炭化珪素半導体装置
JP5605005B2 (ja) * 2010-06-16 2014-10-15 住友電気工業株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
US9287353B2 (en) * 2010-11-30 2016-03-15 Kyocera Corporation Composite substrate and method of manufacturing the same
JP5659882B2 (ja) * 2011-03-09 2015-01-28 住友電気工業株式会社 半導体装置の製造方法
JP2015142034A (ja) * 2014-01-29 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110199380B (zh) * 2017-01-17 2023-03-28 Zf 腓德烈斯哈芬股份公司 在碳化硅上制造绝缘层的方法

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560409A (en) 1984-08-29 1985-12-24 Superior Graphite Metal bearing graphitic carbons
US4692388A (en) 1985-06-24 1987-09-08 Lockheed Missiles & Space Company, Inc. Laminated article
US4806431A (en) 1985-06-24 1989-02-21 Lockheed Missiles & Space Company, Inc. Composites coated with boron-silicon-oxide films
US4818625A (en) 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4689104A (en) 1985-06-24 1987-08-25 Lockheed Missiles & Space Company, Inc. Method of bonding two substrate faces utilizing boron-silicon-hydrogen alloy films
US4810532A (en) 1985-06-24 1989-03-07 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4778726A (en) 1985-06-24 1988-10-18 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US4894511A (en) 1986-08-26 1990-01-16 Physical Sciences, Inc. Source of high flux energetic atoms
US5585165A (en) 1987-06-12 1996-12-17 Lanxide Technology Company, Lp Composite materials and methods for making the same
US5682594A (en) 1987-06-12 1997-10-28 Lanxide Technology Company, Lp Composite materials and methods for making the same
US4910436A (en) 1988-02-12 1990-03-20 Applied Electron Corporation Wide area VUV lamp with grids and purging jets
US5041361A (en) 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
US5741596A (en) 1989-02-21 1998-04-21 Boeing North American, Inc. Coating for oxidation protection of metal surfaces
JP2786283B2 (ja) * 1989-12-22 1998-08-13 株式会社日立製作所 表面改質方法およびその装置並びに表面改質基材
FR2671798B1 (fr) 1991-01-21 1994-03-25 Propulsion Ste Europeenne Procede pour la protection anti-oxydation d'un materiau qui, au moins en surface, est constitue d'une ceramique formee par un compose du silicium, et materiau tel qu'obtenu par le procede.
US5259885A (en) 1991-04-03 1993-11-09 American Superconductor Corporation Process for making ceramic/metal and ceramic/ceramic laminates by oxidation of a metal precursor
US5360635A (en) 1992-01-02 1994-11-01 Air Products And Chemicals, Inc. Method for manufacturing inorganic membranes by organometallic chemical vapor deposition
US5427823A (en) 1993-08-31 1995-06-27 American Research Corporation Of Virginia Laser densification of glass ceramic coatings on carbon-carbon composite materials
US5807441A (en) 1993-11-02 1998-09-15 Sumitomo Metal Industries, Ltd. Method of manufacturing a silicon steel sheet having improved magnetic characteristics
FR2712429B1 (fr) 1993-11-12 1996-01-26 Michel Jean Robert Lagues Materiau supraconducteur constitue de couches monomoleculaires superposees
TW293130B (zh) 1994-03-10 1996-12-11 Mitsubishi Electric Corp
US5443863A (en) 1994-03-16 1995-08-22 Auburn University Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge
US5415756A (en) 1994-03-28 1995-05-16 University Of Houston Ion assisted deposition process including reactive source gassification
US5673106A (en) 1994-06-17 1997-09-30 Texas Instruments Incorporated Printing system with self-monitoring and adjustment
US5828080A (en) 1994-08-17 1998-10-27 Tdk Corporation Oxide thin film, electronic device substrate and electronic device
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US6228453B1 (en) 1995-06-07 2001-05-08 Lanxide Technology Company, Lp Composite materials comprising two jonal functions and methods for making the same
US5753934A (en) 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
JP3137880B2 (ja) 1995-08-25 2001-02-26 ティーディーケイ株式会社 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法
US5766789A (en) 1995-09-29 1998-06-16 Energetics Systems Corporation Electrical energy devices
JP3193302B2 (ja) 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
JP3472087B2 (ja) 1997-06-30 2003-12-02 Ｔｄｋ株式会社 膜構造体、電子デバイス、記録媒体および酸化物導電性薄膜の製造方法
US6534754B2 (en) 1997-08-14 2003-03-18 Westinghouse Savannah River Company, L.L.C. Microwave off-gas treatment apparatus and process
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6194036B1 (en) 1997-10-20 2001-02-27 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US6149829A (en) 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
US6509283B1 (en) * 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
US6082375A (en) 1998-05-21 2000-07-04 Micron Technology, Inc. Method of processing internal surfaces of a chemical vapor deposition reactor
JP4450919B2 (ja) 1999-02-09 2010-04-14 日本碍子株式会社 炭素繊維複合材料
KR100750844B1 (ko) 1999-03-26 2007-08-22 펜조일-퀘이커 스테이트 컴파니 자기기록매체용 윤활제 및 이의 용도
US7195828B2 (en) 1999-03-26 2007-03-27 Shell Oil Company Lubricant for magnetic recording medium and use thereof
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
JP2002543610A (ja) 1999-05-03 2002-12-17 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ ＳｉＣの除去法
US6248618B1 (en) 1999-10-12 2001-06-19 Chartered Semiconductor Manufacturing Ltd. Method of fabrication of dual gate oxides for CMOS devices
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
KR100482241B1 (ko) * 2000-02-25 2005-04-13 샤프 가부시키가이샤 카본 나노튜브 및 그 제조 방법, 전자원 및 그 제조 방법및 표시 장치
US6939756B1 (en) * 2000-03-24 2005-09-06 Vanderbilt University Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects
US6657385B2 (en) 2000-06-20 2003-12-02 Burle Technologies, Inc. Diamond transmission dynode and photomultiplier or imaging device using same
ES2164029B1 (es) 2000-07-07 2003-05-16 Fico Mirrors Sa Dispositivo electrocromico y aplicaciones correspondientes.
JP2002087896A (ja) 2000-09-12 2002-03-27 Mitsubishi Heavy Ind Ltd 自己修復性高耐熱耐酸化性皮膜及び積層体
TWI313059B (zh) 2000-12-08 2009-08-01 Sony Corporatio
US6538274B2 (en) 2000-12-20 2003-03-25 Micron Technology, Inc. Reduction of damage in semiconductor container capacitors
US6703324B2 (en) * 2000-12-21 2004-03-09 Intel Corporation Mechanically reinforced highly porous low dielectric constant films
US20030196680A1 (en) * 2002-04-19 2003-10-23 Dielectric Systems, Inc Process modules for transport polymerization of low epsilon thin films
US20040255862A1 (en) * 2001-02-26 2004-12-23 Lee Chung J. Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US20040055539A1 (en) 2002-09-13 2004-03-25 Dielectric Systems, Inc. Reactive-reactor for generation of gaseous intermediates
US6566242B1 (en) 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
US6855584B2 (en) 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP5025057B2 (ja) 2001-05-10 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW544938B (en) 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
US6743700B2 (en) 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production
US20020179921A1 (en) 2001-06-02 2002-12-05 Cohn Michael B. Compliant hermetic package
US20040023253A1 (en) 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
US6613697B1 (en) 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US6559068B2 (en) * 2001-06-28 2003-05-06 Koninklijke Philips Electronics N.V. Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
US7199027B2 (en) 2001-07-10 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
US6566210B2 (en) 2001-07-13 2003-05-20 International Business Machines Corporation Method of improving gate activation by employing atomic oxygen enhanced oxidation
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
US7476925B2 (en) * 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6844523B2 (en) 2001-09-07 2005-01-18 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment
US7589032B2 (en) 2001-09-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
JP3798674B2 (ja) 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
US20050050803A1 (en) * 2001-10-31 2005-03-10 Jin Amanokura Polishing fluid and polishing method
JP2003142579A (ja) 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
WO2003046508A2 (en) 2001-11-09 2003-06-05 Biomicroarrays, Inc. High surface area substrates for microarrays and methods to make same
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6849825B2 (en) 2001-11-30 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
EP1463121B1 (en) * 2001-11-30 2011-04-20 Panasonic Corporation Semiconductor device and production method therefor
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
SG149680A1 (en) 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
JP2003188254A (ja) 2001-12-18 2003-07-04 Hitachi Ltd 半導体装置の製造方法および半導体装置
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6787229B1 (en) 2002-01-08 2004-09-07 University Of Central Florida Three-dimensional carbon fibers and method and apparatus for their production
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6846754B2 (en) 2002-02-22 2005-01-25 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor layer and vapor phase growth method thereof
JP3968566B2 (ja) 2002-03-26 2007-08-29 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス
JP2003288766A (ja) 2002-03-28 2003-10-10 Kyocera Corp 磁気ディスク基板用保持部材及びその製造方法
JP3950959B2 (ja) * 2002-06-28 2007-08-01 独立行政法人産業技術総合研究所 半導体装置の製造方法
JP4546055B2 (ja) * 2002-09-24 2010-09-15 キヤノン株式会社 クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法
US20040077156A1 (en) * 2002-10-18 2004-04-22 Loucas Tsakalakos Methods of defect reduction in wide bandgap thin films using nanolithography
WO2004057920A1 (ja) * 2002-12-19 2004-07-08 Semiconductor Energy Laboratory Co., Ltd. 表示装置及び表示装置の作製方法
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
JP2004296963A (ja) * 2003-03-28 2004-10-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
SG142140A1 (en) 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith

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EP2259290B1 (en) 2020-03-11
US7572741B2 (en) 2009-08-11
JP2009509333A (ja) 2009-03-05
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EP2259290A3 (en) 2011-01-05
ATE524826T1 (de) 2011-09-15
US20090004883A1 (en) 2009-01-01
EP1935011B1 (en) 2011-09-14
JP4745396B2 (ja) 2011-08-10
CN101263586A (zh) 2008-09-10
US8119539B2 (en) 2012-02-21
WO2007040709A1 (en) 2007-04-12
US20100009545A1 (en) 2010-01-14

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