TW200712259A - A method for etching high dielectric constant materials - Google Patents
A method for etching high dielectric constant materialsInfo
- Publication number
- TW200712259A TW200712259A TW095130163A TW95130163A TW200712259A TW 200712259 A TW200712259 A TW 200712259A TW 095130163 A TW095130163 A TW 095130163A TW 95130163 A TW95130163 A TW 95130163A TW 200712259 A TW200712259 A TW 200712259A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- dielectric constant
- high dielectric
- dielectric material
- gas
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 239000003989 dielectric material Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000003085 diluting agent Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052756 noble gas Inorganic materials 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/208,573 US7964512B2 (en) | 2005-08-22 | 2005-08-22 | Method for etching high dielectric constant materials |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200712259A true TW200712259A (en) | 2007-04-01 |
Family
ID=37767836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095130163A TW200712259A (en) | 2005-08-22 | 2006-08-16 | A method for etching high dielectric constant materials |
Country Status (4)
Country | Link |
---|---|
US (1) | US7964512B2 (zh) |
JP (1) | JP2007073952A (zh) |
CN (1) | CN1921072B (zh) |
TW (1) | TW200712259A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI562210B (en) * | 2008-08-22 | 2016-12-11 | Taiwan Semiconductor Mfg Co Ltd | Method of forming gate structures or semiconductor devices |
Families Citing this family (21)
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US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US8119210B2 (en) * | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7837838B2 (en) * | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
US7645710B2 (en) * | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7678710B2 (en) * | 2006-03-09 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7780862B2 (en) * | 2006-03-21 | 2010-08-24 | Applied Materials, Inc. | Device and method for etching flash memory gate stacks comprising high-k dielectric |
US8722547B2 (en) * | 2006-04-20 | 2014-05-13 | Applied Materials, Inc. | Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries |
US8183161B2 (en) | 2006-09-12 | 2012-05-22 | Tokyo Electron Limited | Method and system for dry etching a hafnium containing material |
TWI435376B (zh) * | 2006-09-26 | 2014-04-21 | Applied Materials Inc | 用於缺陷鈍化之高k閘極堆疊的氟電漿處理 |
JP2009021584A (ja) * | 2007-06-27 | 2009-01-29 | Applied Materials Inc | 高k材料ゲート構造の高温エッチング方法 |
US20100003828A1 (en) * | 2007-11-28 | 2010-01-07 | Guowen Ding | Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas |
US20090197421A1 (en) * | 2008-01-31 | 2009-08-06 | Micron Technology, Inc. | Chemistry and compositions for manufacturing integrated circuits |
US7782600B2 (en) * | 2008-01-31 | 2010-08-24 | Ncr Corporation | Access self-service terminal |
KR20090103049A (ko) * | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US20120244693A1 (en) * | 2011-03-22 | 2012-09-27 | Tokyo Electron Limited | Method for patterning a full metal gate structure |
CN102427036A (zh) * | 2011-07-22 | 2012-04-25 | 上海华力微电子有限公司 | 对HfO2薄膜的高选择性干法刻蚀方法 |
US8808562B2 (en) | 2011-09-12 | 2014-08-19 | Tokyo Electron Limited | Dry metal etching method |
US20150357200A1 (en) * | 2012-12-27 | 2015-12-10 | Zeon Corporation | Dry etching method |
CN106548936B (zh) * | 2015-09-23 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 一种金属层的刻蚀方法 |
US11631680B2 (en) | 2018-10-18 | 2023-04-18 | Applied Materials, Inc. | Methods and apparatus for smoothing dynamic random access memory bit line metal |
US10700072B2 (en) * | 2018-10-18 | 2020-06-30 | Applied Materials, Inc. | Cap layer for bit line resistance reduction |
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US4375385A (en) | 1982-03-25 | 1983-03-01 | Rca Corporation | Plasma etching of aluminum |
US4372807A (en) | 1982-03-25 | 1983-02-08 | Rca Corporation | Plasma etching of aluminum |
JPS60169140A (ja) | 1984-02-13 | 1985-09-02 | Hitachi Ltd | ドライエツチング方法 |
US4842676A (en) | 1987-07-16 | 1989-06-27 | Texas Instruments Incorporated | Process for etch of tungsten |
US4855016A (en) | 1987-07-16 | 1989-08-08 | Texas Instruments Incorporated | Method for etching aluminum film doped with copper |
US4986896A (en) | 1989-04-13 | 1991-01-22 | Mobil Oil Corp. | Method for passivating metals on an FCC catalyst |
JPH02291131A (ja) | 1989-04-28 | 1990-11-30 | Sony Corp | バリアメタル/アルミニウム系積層膜のドライエッチング方法 |
JP3115715B2 (ja) | 1992-11-12 | 2000-12-11 | 三菱電機株式会社 | 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法および薄膜キャパシタ素子の製造方法 |
JP3438003B2 (ja) * | 1994-04-20 | 2003-08-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JPH11293481A (ja) * | 1998-04-14 | 1999-10-26 | Toshiba Corp | 薄膜処理方法及びその装置 |
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US20040011380A1 (en) | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US7270761B2 (en) | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
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US7037849B2 (en) * | 2003-06-27 | 2006-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for patterning high-k dielectric material |
JP2005039015A (ja) | 2003-07-18 | 2005-02-10 | Hitachi High-Technologies Corp | プラズマ処理方法および装置 |
DE10339670B4 (de) | 2003-08-28 | 2006-02-16 | Siemens Ag | Klemmeinrichtung und damit ausgestattetes Schaltgerät zum Leiteranschluss mittels Ringkabelschuh |
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RU2006115598A (ru) | 2003-10-06 | 2007-11-27 | Ибара Корпорейшн (JP) | Способ и устройство для обработки органического материала |
US20050081781A1 (en) * | 2003-10-17 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Fully dry, Si recess free process for removing high k dielectric layer |
JP2005268292A (ja) * | 2004-03-16 | 2005-09-29 | Toshiba Corp | 半導体装置の製造方法 |
JP4515956B2 (ja) | 2005-05-02 | 2010-08-04 | 株式会社日立ハイテクノロジーズ | 試料のエッチング方法 |
JP4554461B2 (ja) | 2005-07-26 | 2010-09-29 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
-
2005
- 2005-08-22 US US11/208,573 patent/US7964512B2/en not_active Expired - Fee Related
-
2006
- 2006-08-16 TW TW095130163A patent/TW200712259A/zh unknown
- 2006-08-21 CN CN2006101112692A patent/CN1921072B/zh not_active Expired - Fee Related
- 2006-08-22 JP JP2006225737A patent/JP2007073952A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI562210B (en) * | 2008-08-22 | 2016-12-11 | Taiwan Semiconductor Mfg Co Ltd | Method of forming gate structures or semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
CN1921072B (zh) | 2012-10-03 |
US7964512B2 (en) | 2011-06-21 |
CN1921072A (zh) | 2007-02-28 |
US20070042601A1 (en) | 2007-02-22 |
JP2007073952A (ja) | 2007-03-22 |
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