TW200712259A - A method for etching high dielectric constant materials - Google Patents

A method for etching high dielectric constant materials

Info

Publication number
TW200712259A
TW200712259A TW095130163A TW95130163A TW200712259A TW 200712259 A TW200712259 A TW 200712259A TW 095130163 A TW095130163 A TW 095130163A TW 95130163 A TW95130163 A TW 95130163A TW 200712259 A TW200712259 A TW 200712259A
Authority
TW
Taiwan
Prior art keywords
etching
dielectric constant
high dielectric
dielectric material
gas
Prior art date
Application number
TW095130163A
Other languages
English (en)
Inventor
Xi-Kun Wang
Wei Liu
Yan Du
Mei-Hua Shen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200712259A publication Critical patent/TW200712259A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW095130163A 2005-08-22 2006-08-16 A method for etching high dielectric constant materials TW200712259A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/208,573 US7964512B2 (en) 2005-08-22 2005-08-22 Method for etching high dielectric constant materials

Publications (1)

Publication Number Publication Date
TW200712259A true TW200712259A (en) 2007-04-01

Family

ID=37767836

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130163A TW200712259A (en) 2005-08-22 2006-08-16 A method for etching high dielectric constant materials

Country Status (4)

Country Link
US (1) US7964512B2 (zh)
JP (1) JP2007073952A (zh)
CN (1) CN1921072B (zh)
TW (1) TW200712259A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562210B (en) * 2008-08-22 2016-12-11 Taiwan Semiconductor Mfg Co Ltd Method of forming gate structures or semiconductor devices

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7780862B2 (en) * 2006-03-21 2010-08-24 Applied Materials, Inc. Device and method for etching flash memory gate stacks comprising high-k dielectric
US8722547B2 (en) * 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
US8183161B2 (en) 2006-09-12 2012-05-22 Tokyo Electron Limited Method and system for dry etching a hafnium containing material
TWI435376B (zh) * 2006-09-26 2014-04-21 Applied Materials Inc 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
JP2009021584A (ja) * 2007-06-27 2009-01-29 Applied Materials Inc 高ｋ材料ゲート構造の高温エッチング方法
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
US20090197421A1 (en) * 2008-01-31 2009-08-06 Micron Technology, Inc. Chemistry and compositions for manufacturing integrated circuits
US7782600B2 (en) * 2008-01-31 2010-08-24 Ncr Corporation Access self-service terminal
KR20090103049A (ko) * 2008-03-27 2009-10-01 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20120244693A1 (en) * 2011-03-22 2012-09-27 Tokyo Electron Limited Method for patterning a full metal gate structure
CN102427036A (zh) * 2011-07-22 2012-04-25 上海华力微电子有限公司 对HfO2薄膜的高选择性干法刻蚀方法
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US20150357200A1 (en) * 2012-12-27 2015-12-10 Zeon Corporation Dry etching method
CN106548936B (zh) * 2015-09-23 2022-04-22 北京北方华创微电子装备有限公司 一种金属层的刻蚀方法
US11631680B2 (en) 2018-10-18 2023-04-18 Applied Materials, Inc. Methods and apparatus for smoothing dynamic random access memory bit line metal
US10700072B2 (en) * 2018-10-18 2020-06-30 Applied Materials, Inc. Cap layer for bit line resistance reduction

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4375385A (en) 1982-03-25 1983-03-01 Rca Corporation Plasma etching of aluminum
US4372807A (en) 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS60169140A (ja) 1984-02-13 1985-09-02 Hitachi Ltd ドライエツチング方法
US4842676A (en) 1987-07-16 1989-06-27 Texas Instruments Incorporated Process for etch of tungsten
US4855016A (en) 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for etching aluminum film doped with copper
US4986896A (en) 1989-04-13 1991-01-22 Mobil Oil Corp. Method for passivating metals on an FCC catalyst
JPH02291131A (ja) 1989-04-28 1990-11-30 Sony Corp バリアメタル／アルミニウム系積層膜のドライエッチング方法
JP3115715B2 (ja) 1992-11-12 2000-12-11 三菱電機株式会社 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法および薄膜キャパシタ素子の製造方法
JP3438003B2 (ja) * 1994-04-20 2003-08-18 東京エレクトロン株式会社 プラズマ処理装置
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
KR100528685B1 (ko) 1998-03-12 2005-11-15 가부시끼가이샤 히다치 세이사꾸쇼 시료의 표면 가공방법
JPH11293481A (ja) * 1998-04-14 1999-10-26 Toshiba Corp 薄膜処理方法及びその装置
US6010966A (en) 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers
DE19856082C1 (de) 1998-12-04 2000-07-27 Siemens Ag Verfahren zum Strukturieren einer metallhaltigen Schicht
US6511872B1 (en) * 2001-07-10 2003-01-28 Agere Systems Inc. Device having a high dielectric constant material and a method of manufacture thereof
US6566148B2 (en) 2001-08-13 2003-05-20 Sharp Laboratories Of America, Inc. Method of making a ferroelectric memory transistor
US20030045098A1 (en) 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US6713342B2 (en) 2001-12-31 2004-03-30 Texas Instruments Incorporated FeRAM sidewall diffusion barrier etch
US20060252265A1 (en) * 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US6821907B2 (en) 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6451647B1 (en) 2002-03-18 2002-09-17 Advanced Micro Devices, Inc. Integrated plasma etch of gate and gate dielectric and low power plasma post gate etch removal of high-K residual
US6902681B2 (en) 2002-06-26 2005-06-07 Applied Materials Inc Method for plasma etching of high-K dielectric materials
US20040007561A1 (en) 2002-07-12 2004-01-15 Applied Materials, Inc. Method for plasma etching of high-K dielectric materials
US20040011380A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7270761B2 (en) 2002-10-18 2007-09-18 Appleid Materials, Inc Fluorine free integrated process for etching aluminum including chamber dry clean
US20050176191A1 (en) * 2003-02-04 2005-08-11 Applied Materials, Inc. Method for fabricating a notched gate structure of a field effect transistor
JP4283017B2 (ja) 2003-03-25 2009-06-24 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2007502547A (ja) 2003-05-30 2007-02-08 東京エレクトロン株式会社 Ｈｉｇｈ−ｋ誘電材料をエッチングする方法とシステム。
JP4358556B2 (ja) 2003-05-30 2009-11-04 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7037849B2 (en) * 2003-06-27 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Process for patterning high-k dielectric material
JP2005039015A (ja) 2003-07-18 2005-02-10 Hitachi High-Technologies Corp プラズマ処理方法および装置
DE10339670B4 (de) 2003-08-28 2006-02-16 Siemens Ag Klemmeinrichtung und damit ausgestattetes Schaltgerät zum Leiteranschluss mittels Ringkabelschuh
JP2005086080A (ja) 2003-09-10 2005-03-31 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
RU2006115598A (ru) 2003-10-06 2007-11-27 Ибара Корпорейшн (JP) Способ и устройство для обработки органического материала
US20050081781A1 (en) * 2003-10-17 2005-04-21 Taiwan Semiconductor Manufacturing Co. Fully dry, Si recess free process for removing high k dielectric layer
JP2005268292A (ja) * 2004-03-16 2005-09-29 Toshiba Corp 半導体装置の製造方法
JP4515956B2 (ja) 2005-05-02 2010-08-04 株式会社日立ハイテクノロジーズ 試料のエッチング方法
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562210B (en) * 2008-08-22 2016-12-11 Taiwan Semiconductor Mfg Co Ltd Method of forming gate structures or semiconductor devices

Also Published As

Publication number Publication date
CN1921072B (zh) 2012-10-03
US7964512B2 (en) 2011-06-21
CN1921072A (zh) 2007-02-28
US20070042601A1 (en) 2007-02-22
JP2007073952A (ja) 2007-03-22

Similar Documents

Publication Publication Date Title
TW200712259A (en) A method for etching high dielectric constant materials
US10256109B2 (en) Nitrogen-containing compounds for etching semiconductor structures
KR101628593B1 (ko) 감소된 측벽 스페이서 슬림화를 갖는 고선택적 스페이서 에칭 공정
TW200509246A (en) Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
EP2657363B1 (en) Method of depositing silicon dioxide films
TW200600609A (en) Method and apparatus for stable plasma processing
KR102209352B1 (ko) 텅스텐 에칭의 방법
GB2468458A (en) Method of etching a high aspect ratio contact
SG152207A1 (en) Methods for forming high aspect ratio features on a substrate
WO2012018375A3 (en) Plasma mediated ashing processes
WO2012061277A3 (en) Rapid and uniform gas switching for a plasma etch process
WO2010042552A3 (en) Selective etching of silicon nitride
WO2007120573A3 (en) Plasma dielectric etch process including ex-situ backside polumer removal for low-dielectric constant material
WO2004063422A3 (en) Method for curing low dielectric constant film using direct current bias
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
TW200729339A (en) Selective etch of films with high dielectric constant with H2 addition
TW200644123A (en) Methods of removing resist from substrates in resist stripping chambers
SG147394A1 (en) Hydrogen ashing enhanced with water vapor and diluent gas
WO2011006018A3 (en) Apparatus and method for plasma processing
WO2001093315A3 (en) Methods and apparatus for plasma processing
JP2006501634A5 (zh)
TW200713427A (en) Silicon nitride from aminosilane using PECVD
TW200737345A (en) Method and system for selectively etching a dielectric material relative to silicon
EP1096547A3 (en) Method and apparatus for plasma etching
TW200710958A (en) High aspect ratio gap fill application using high density plasma chemical vapor deposition