TW200710574A - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TW200710574A
TW200710574A TW095120840A TW95120840A TW200710574A TW 200710574 A TW200710574 A TW 200710574A TW 095120840 A TW095120840 A TW 095120840A TW 95120840 A TW95120840 A TW 95120840A TW 200710574 A TW200710574 A TW 200710574A
Authority
TW
Taiwan
Prior art keywords
resist composition
positive resist
forming
acid
resist pattern
Prior art date
Application number
TW095120840A
Other languages
English (en)
Other versions
TWI338194B (en
Inventor
Masaru Takeshita
Yoshiyuki Utsumi
Ryotaro Hayashi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200710574A publication Critical patent/TW200710574A/zh
Application granted granted Critical
Publication of TWI338194B publication Critical patent/TWI338194B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW95120840A 2005-06-15 2006-06-12 Positive resist composition and method for forming resist pattern TWI338194B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005174899A JP4611813B2 (ja) 2005-06-15 2005-06-15 ポジ型レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200710574A true TW200710574A (en) 2007-03-16
TWI338194B TWI338194B (en) 2011-03-01

Family

ID=37532169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95120840A TWI338194B (en) 2005-06-15 2006-06-12 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP4611813B2 (zh)
TW (1) TWI338194B (zh)
WO (1) WO2006134806A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5663153B2 (ja) * 2008-08-27 2015-02-04 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5689253B2 (ja) 2009-06-24 2015-03-25 住友化学株式会社 化学増幅型フォトレジスト組成物及びレジストパターンの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3208602B2 (ja) * 1992-06-30 2001-09-17 富士通株式会社 α，β−不飽和ニトリルを有する脂環式多環族とメタクリレート誘導体との共重合体
JP3568599B2 (ja) * 1993-12-28 2004-09-22 富士通株式会社 放射線感光材料及びパターン形成方法
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
JP3239772B2 (ja) * 1995-10-09 2001-12-17 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3674243B2 (ja) * 1997-05-21 2005-07-20 Ｊｓｒ株式会社 レジストパターン形成方法
JPH11255826A (ja) * 1998-03-12 1999-09-21 Mitsui Chem Inc 狭分散性のポリ｛１−（１−アルコキシアルコキシ）−４−エテニルベンゼン｝およびその製造方法
JP3874061B2 (ja) * 1999-08-30 2007-01-31 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4627360B2 (ja) * 1999-09-08 2011-02-09 日本曹達株式会社 Ａ−ｂ−ａ型アルケニルフェノール系共重合体
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3912483B2 (ja) * 2000-09-07 2007-05-09 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2002155117A (ja) * 2000-09-07 2002-05-28 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP3844054B2 (ja) * 2000-11-21 2006-11-08 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2003241376A (ja) * 2002-02-14 2003-08-27 Sumitomo Bakelite Co Ltd フォトレジスト用添加剤及びフォトレジスト組成物
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP2004361473A (ja) * 2003-06-02 2004-12-24 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Also Published As

Publication number Publication date
JP2006349911A (ja) 2006-12-28
JP4611813B2 (ja) 2011-01-12
TWI338194B (en) 2011-03-01
WO2006134806A1 (ja) 2006-12-21

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