TW200709429A - Thin film circuits - Google Patents

Thin film circuits

Info

Publication number
TW200709429A
TW200709429A TW095126751A TW95126751A TW200709429A TW 200709429 A TW200709429 A TW 200709429A TW 095126751 A TW095126751 A TW 095126751A TW 95126751 A TW95126751 A TW 95126751A TW 200709429 A TW200709429 A TW 200709429A
Authority
TW
Taiwan
Prior art keywords
light shield
source
overlap
drain
gate
Prior art date
Application number
TW095126751A
Other languages
English (en)
Inventor
Steven Charles Deane
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200709429A publication Critical patent/TW200709429A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW095126751A 2005-07-25 2006-07-21 Thin film circuits TW200709429A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05106819 2005-07-25

Publications (1)

Publication Number Publication Date
TW200709429A true TW200709429A (en) 2007-03-01

Family

ID=37546820

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126751A TW200709429A (en) 2005-07-25 2006-07-21 Thin film circuits

Country Status (6)

Country Link
US (1) US20080217618A1 (zh)
EP (1) EP1911099A2 (zh)
JP (1) JP2009503572A (zh)
CN (1) CN101228637A (zh)
TW (1) TW200709429A (zh)
WO (1) WO2007013009A2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101189275B1 (ko) * 2005-08-26 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
TWI485687B (zh) 2009-01-16 2015-05-21 Semiconductor Energy Lab 液晶顯示裝置及其電子裝置
TWI476929B (zh) * 2009-04-24 2015-03-11 Au Optronics Corp 底閘極薄膜電晶體與主動陣列基板
JP5521495B2 (ja) * 2009-11-04 2014-06-11 セイコーエプソン株式会社 半導体装置用基板、半導体装置及び電子機器
TWI447983B (zh) 2011-05-24 2014-08-01 Au Optronics Corp 半導體結構以及有機電致發光元件
KR101851565B1 (ko) 2011-08-17 2018-04-25 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
JP6350984B2 (ja) * 2014-04-24 2018-07-04 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜トランジスタ及び表示装置
JP6474486B2 (ja) * 2015-05-25 2019-02-27 シャープ株式会社 表示装置の駆動回路
CN104965364B (zh) * 2015-07-14 2018-03-30 武汉华星光电技术有限公司 阵列基板及驱动阵列基板的方法
CN110326113B (zh) * 2017-02-21 2023-01-03 夏普株式会社 驱动电路、tft基板、显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677547A (en) * 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
JPH07112053B2 (ja) * 1990-04-13 1995-11-29 富士ゼロックス株式会社 薄膜スイッチング素子アレイ
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
FR2720185B1 (fr) * 1994-05-17 1996-07-05 Thomson Lcd Registre à décalage utilisant des transistors M.I.S. de même polarité.
US5782665A (en) * 1995-12-29 1998-07-21 Xerox Corporation Fabricating array with storage capacitor between cell electrode and dark matrix
US5834344A (en) * 1996-07-17 1998-11-10 Industrial Technology Research Institute Method for forming high performance thin film transistor structure
JP3591513B2 (ja) * 2000-04-21 2004-11-24 セイコーエプソン株式会社 電気光学装置およびプロジェクタ
US6791144B1 (en) * 2000-06-27 2004-09-14 International Business Machines Corporation Thin film transistor and multilayer film structure and manufacturing method of same
JP3982700B2 (ja) * 2001-10-16 2007-09-26 株式会社ナナオ 液晶表示装置とその較正方法
AU2003239178A1 (en) * 2002-04-25 2003-11-10 Weyerhaeuser Company Method for making tissue and towel products containing crosslinked cellulosic fibers

Also Published As

Publication number Publication date
US20080217618A1 (en) 2008-09-11
CN101228637A (zh) 2008-07-23
JP2009503572A (ja) 2009-01-29
WO2007013009A2 (en) 2007-02-01
WO2007013009A3 (en) 2007-03-29
EP1911099A2 (en) 2008-04-16

Similar Documents

Publication Publication Date Title
TW200709429A (en) Thin film circuits
JP7247301B2 (ja) シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ
US8063414B2 (en) Compact standard cell
TW200802848A (en) Dual-gate transistor and pixel structure using the same
TW200741722A (en) Nonvolatile semiconductor memory device
JP2005340739A (ja) スイッチ回路及び半導体装置
TW200607092A (en) Wide bandgap transistors Wide bandgap transistors with multiple field plates
TW200619790A (en) Thin film transistor array panel
US10211205B2 (en) Field effect transistor structure for reducing contact resistance
US7703062B2 (en) Semiconductor integrated circuit and method of designing layout of the same
JP2005535113A5 (zh)
JPH0897362A (ja) 半導体集積回路の電源保護回路
JP7529121B2 (ja) 半導体装置
TW200719463A (en) Layout structure for electrostatic discharge protection
EP1524702A3 (en) Thin film transistor with body contact region
KR100732952B1 (ko) 반도체장치
TW200503251A (en) Nonvolatile semiconductor memory device
TW200639547A (en) Thin film transistor array
KR101279186B1 (ko) 반도체 장치
JP2008192687A (ja) 半導体集積回路装置
US6084436A (en) Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance
JP2016174240A (ja) 半導体スイッチ
CN108615764B (zh) 半导体结构
JPH113934A (ja) 半導体集積回路
JP4988707B2 (ja) Ｍｏｓｆｅｔ装置を制御するためのｍｏｓｆｅｔ装置