TW200709289A - Wafer with fixing agent and method for producing the same - Google Patents

Wafer with fixing agent and method for producing the same

Info

Publication number
TW200709289A
TW200709289A TW095118133A TW95118133A TW200709289A TW 200709289 A TW200709289 A TW 200709289A TW 095118133 A TW095118133 A TW 095118133A TW 95118133 A TW95118133 A TW 95118133A TW 200709289 A TW200709289 A TW 200709289A
Authority
TW
Taiwan
Prior art keywords
wafer
fixing agent
producing
same
supporting
Prior art date
Application number
TW095118133A
Other languages
English (en)
Inventor
Katsuhiko Hieda
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200709289A publication Critical patent/TW200709289A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW095118133A 2005-05-30 2006-05-22 Wafer with fixing agent and method for producing the same TW200709289A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005157970 2005-05-30

Publications (1)

Publication Number Publication Date
TW200709289A true TW200709289A (en) 2007-03-01

Family

ID=37481389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118133A TW200709289A (en) 2005-05-30 2006-05-22 Wafer with fixing agent and method for producing the same

Country Status (3)

Country Link
JP (1) JP4784604B2 (zh)
TW (1) TW200709289A (zh)
WO (1) WO2006129458A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109999A (ja) * 2005-10-17 2007-04-26 Tokyo Electron Ltd 貼り合せ方法
WO2008149506A1 (ja) * 2007-06-08 2008-12-11 Hoya Candeo Optronics Corporation ウエハ支持ガラス
JP2009016771A (ja) * 2007-06-08 2009-01-22 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 ウエハ支持ガラス
JP4289630B2 (ja) * 2007-07-24 2009-07-01 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 ウエハ支持ガラス
JP5832060B2 (ja) * 2008-02-18 2015-12-16 デンカ株式会社 電子部品集合体の研削方法とこれを用いた電子部品集合体の分割方法
EP2402981B1 (de) 2009-03-18 2013-07-10 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger
DE102009018156B4 (de) 2009-04-21 2024-08-29 Ev Group Gmbh Vorrichtung und Verfahren zum Trennen eines Substrats von einem Trägersubstrat
JP5728163B2 (ja) * 2010-04-02 2015-06-03 東京応化工業株式会社 剥離方法、および剥離液
US8580655B2 (en) * 2012-03-02 2013-11-12 Disco Corporation Processing method for bump-included device wafer
JP5285793B2 (ja) * 2012-05-10 2013-09-11 東京応化工業株式会社 サポートプレートの処理方法
JP5905407B2 (ja) * 2012-06-15 2016-04-20 東京エレクトロン株式会社 シート剥離装置、接合システム、剥離システム、シート剥離方法、プログラム及びコンピュータ記憶媒体
JP5886783B2 (ja) * 2012-06-15 2016-03-16 東京エレクトロン株式会社 シート剥離装置、接合システム、剥離システム、シート剥離方法、プログラム及びコンピュータ記憶媒体
JP6188051B2 (ja) * 2012-12-25 2017-08-30 国立研究開発法人産業技術総合研究所 部品製造方法、接合剥離装置、および複合キャリア
JP6071663B2 (ja) * 2013-03-12 2017-02-01 株式会社ディスコ 環状フレーム
US9269603B2 (en) 2013-05-09 2016-02-23 Globalfoundries Inc. Temporary liquid thermal interface material for surface tension adhesion and thermal control
JP6295066B2 (ja) * 2013-11-20 2018-03-14 東京応化工業株式会社 処理方法
JP5607847B1 (ja) * 2013-11-29 2014-10-15 古河電気工業株式会社 半導体加工用粘着テープ
JP6550741B2 (ja) * 2014-12-17 2019-07-31 富士電機株式会社 半導体装置の製造方法
KR101921411B1 (ko) * 2017-01-26 2018-11-22 한솔테크닉스(주) 기판제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03256668A (ja) * 1990-03-06 1991-11-15 Hitachi Cable Ltd 半導体ウェハ研磨用マウント板
JP3523947B2 (ja) * 1995-11-01 2004-04-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法並びにその半導体装置
JP4141788B2 (ja) * 2002-10-09 2008-08-27 日立ビアエンジニアリング株式会社 保護プレート

Also Published As

Publication number Publication date
JPWO2006129458A1 (ja) 2008-12-25
WO2006129458A1 (ja) 2006-12-07
JP4784604B2 (ja) 2011-10-05

Similar Documents

Publication Publication Date Title
TW200709289A (en) Wafer with fixing agent and method for producing the same
TW200703461A (en) Glass-based semiconductor on insulator structures and methods of making same
TW200617151A (en) Polishing composition and polishing method using the same
EP1693478A3 (en) Diffusion barrier for assemblies with metallic and silicon containing components and method therefor
WO2008066894A3 (en) Substrate for a flexible microelectronic assembly
TW200729390A (en) Method for making semiconductor wafer
MY143763A (en) Method and system for using a two-phases substrate cleaning compound
SG150571A1 (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
TW200710295A (en) Nitride semiconductor substrate, and method for working nitride semiconductor substrate
DK1927275T3 (da) Trykskabelon til en SMT-proces og fremgangsmåde til dens belægning
TW200721421A (en) Semiconductor structure and method of assembly
HK1076541A1 (en) Electro-osmotic pumps and micro-channels
SG116648A1 (en) Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same.
TW200731381A (en) Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
MY151436A (en) Method of reducing porosity
FR2866748A1 (fr) Dispositif d'affichage a cristal liquide et son procede de fabrication
TW200632995A (en) Single wafer dryer and drying methods
TW200734437A (en) Polishing liquid for barrier layer
TW200738868A (en) Method and system for using a two-phases substrate cleaning compound
TW200621960A (en) Polishing composition and polishing method using the same
TW200705719A (en) Thin-film semiconductor-body
TW200741978A (en) Stressor integration and method thereof
TW200746276A (en) Method for bonding a semiconductor substrate to a metal substrate
WO2007087769A3 (de) Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht
SG144153A1 (en) Lithographic apparatus and device manufacturing method