TW200708069A - Semiconductor failure analysis apparatus, failure analysis method, and failure analysis program - Google Patents

Semiconductor failure analysis apparatus, failure analysis method, and failure analysis program

Info

Publication number
TW200708069A
TW200708069A TW095122503A TW95122503A TW200708069A TW 200708069 A TW200708069 A TW 200708069A TW 095122503 A TW095122503 A TW 095122503A TW 95122503 A TW95122503 A TW 95122503A TW 200708069 A TW200708069 A TW 200708069A
Authority
TW
Taiwan
Prior art keywords
failure
analysis
failure analysis
semiconductor device
semiconductor
Prior art date
Application number
TW095122503A
Other languages
English (en)
Other versions
TWI462572B (zh
Inventor
Toshiyuki Majima
Akira Shimase
Hirotoshi Terada
Kazuhiro Hotta
Masahiro Takeda
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200708069A publication Critical patent/TW200708069A/zh
Application granted granted Critical
Publication of TWI462572B publication Critical patent/TWI462572B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Quality & Reliability (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW095122503A 2005-06-22 2006-06-22 半導體不良解析裝置、不良解析方法、及不良解析程式 TWI462572B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005182627A JP5005893B2 (ja) 2005-06-22 2005-06-22 半導体不良解析装置、不良解析方法、及び不良解析プログラム

Publications (2)

Publication Number Publication Date
TW200708069A true TW200708069A (en) 2007-02-16
TWI462572B TWI462572B (zh) 2014-11-21

Family

ID=37570420

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122503A TWI462572B (zh) 2005-06-22 2006-06-22 半導體不良解析裝置、不良解析方法、及不良解析程式

Country Status (7)

Country Link
US (1) US20070020781A1 (zh)
EP (1) EP1901079A4 (zh)
JP (1) JP5005893B2 (zh)
KR (1) KR101209311B1 (zh)
CN (1) CN101208608A (zh)
TW (1) TWI462572B (zh)
WO (1) WO2006137391A1 (zh)

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JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
US7765444B2 (en) * 2006-11-06 2010-07-27 Nec Electronics Corporation Failure diagnosis for logic circuits
JP5155602B2 (ja) * 2007-06-20 2013-03-06 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
JP4917115B2 (ja) 2009-02-18 2012-04-18 ルネサスエレクトロニクス株式会社 半導体集積回路の故障解析方法、故障解析装置、及び故障解析プログラム
CN103855047B (zh) * 2012-12-04 2016-10-26 上海华虹宏力半导体制造有限公司 深沟槽产品的物理分析结构及方法
KR102389663B1 (ko) * 2015-03-20 2022-04-21 한화정밀기계 주식회사 전자 부품 실장 궤적 표시 방법
CN105021970A (zh) * 2015-07-30 2015-11-04 厦门乾照光电股份有限公司 一种发光二极管失效分析解剖装置和解剖方法

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JP3678133B2 (ja) * 2000-10-30 2005-08-03 株式会社日立製作所 検査システムおよび半導体デバイスの製造方法
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JP4190748B2 (ja) * 2001-06-27 2008-12-03 株式会社ルネサステクノロジ 半導体不良解析用のｃａｄツール及び半導体不良解析方法
JP4283487B2 (ja) * 2002-04-08 2009-06-24 株式会社ルネサステクノロジ 半導体の不良解析方法及びそのシステム
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JP2005158780A (ja) * 2003-11-20 2005-06-16 Hitachi Ltd パターン欠陥検査方法及びその装置
US20060098862A1 (en) * 2004-11-10 2006-05-11 International Business Machines Corporation Nanoscale defect image detection for semiconductors
JP5006520B2 (ja) * 2005-03-22 2012-08-22 株式会社日立ハイテクノロジーズ 欠陥観察装置及び欠陥観察装置を用いた欠陥観察方法
JP5000104B2 (ja) * 2005-06-22 2012-08-15 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、不良解析プログラム、及び不良解析システム
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JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム

Also Published As

Publication number Publication date
TWI462572B (zh) 2014-11-21
KR20080016795A (ko) 2008-02-22
JP5005893B2 (ja) 2012-08-22
US20070020781A1 (en) 2007-01-25
EP1901079A1 (en) 2008-03-19
CN101208608A (zh) 2008-06-25
KR101209311B1 (ko) 2012-12-06
EP1901079A4 (en) 2015-10-07
JP2007005497A (ja) 2007-01-11
WO2006137391A1 (ja) 2006-12-28

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