TW200703881A - Method and system for output matching of RF transistors - Google Patents

Method and system for output matching of RF transistors

Info

Publication number
TW200703881A
TW200703881A TW095108820A TW95108820A TW200703881A TW 200703881 A TW200703881 A TW 200703881A TW 095108820 A TW095108820 A TW 095108820A TW 95108820 A TW95108820 A TW 95108820A TW 200703881 A TW200703881 A TW 200703881A
Authority
TW
Taiwan
Prior art keywords
output
transistor
high frequency
frequency power
electrode
Prior art date
Application number
TW095108820A
Other languages
English (en)
Inventor
Igor Blednov
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200703881A publication Critical patent/TW200703881A/zh

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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TW095108820A 2005-03-18 2006-03-15 Method and system for output matching of RF transistors TW200703881A (en)

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Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719112B2 (en) * 2006-08-07 2010-05-18 University Of Central Florida Research Foundation, Inc. On-chip magnetic components
WO2008070607A1 (en) * 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
KR100878708B1 (ko) 2007-09-04 2009-01-14 알.에프 에이치아이씨 주식회사 고출력 반도체 소자 패키지 및 방법
WO2009128035A1 (en) * 2008-04-15 2009-10-22 Nxp B.V. High frequency field-effect transistor
WO2009130544A1 (en) * 2008-04-22 2009-10-29 Freescale Semiconductor, Inc. Wireless communication unit and semiconductor device having a power amplifier therefor
US8552800B2 (en) 2009-04-30 2013-10-08 Freescale Semiconductor, Inc. Wireless communication device and semiconductor package device having a power amplifier therefor
EP2600525A3 (en) * 2009-04-30 2014-04-09 Freescale Semiconductor, Inc. Wireless communication device and semiconductor package device having a power amplifier therefor
US7986184B2 (en) 2009-12-18 2011-07-26 Nxp B.V. Radio frequency amplifier with effective decoupling
DE102010009984A1 (de) 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
US20110193212A1 (en) * 2010-02-08 2011-08-11 Qualcomm Incorporated Systems and Methods Providing Arrangements of Vias
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
JP5387499B2 (ja) 2010-05-14 2014-01-15 三菱電機株式会社 内部整合型トランジスタ
CN103477554B (zh) 2011-04-20 2016-08-17 飞思卡尔半导体公司 放大器和相关集成电路
WO2012151322A1 (en) * 2011-05-02 2012-11-08 Rfaxis, Inc. Power amplifier with co-existence filter
CN102288846B (zh) * 2011-06-15 2013-09-04 博威科技(深圳)有限公司 一种射频功率管的测试方法
US9281283B2 (en) * 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
KR20140069701A (ko) * 2012-11-29 2014-06-10 한국전자통신연구원 능동 소자의 대신호 모델 구성 방법
US9337183B2 (en) * 2013-11-01 2016-05-10 Infineon Technologies Ag Transformer input matched transistor
DE102013226989A1 (de) * 2013-12-20 2015-07-09 Rohde & Schwarz Gmbh & Co. Kg Halbleiter-Bauteil mit Chip für den Hochfrequenzbereich
US9438184B2 (en) 2014-06-27 2016-09-06 Freescale Semiconductor, Inc. Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
US9893025B2 (en) * 2014-10-01 2018-02-13 Analog Devices Global High isolation wideband switch
US9589916B2 (en) 2015-02-10 2017-03-07 Infineon Technologies Ag Inductively coupled transformer with tunable impedance match network
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
JP6569417B2 (ja) * 2015-09-16 2019-09-04 三菱電機株式会社 増幅器
CN107070419B (zh) 2015-10-21 2022-02-25 恩智浦美国有限公司 用于rf放大器器件的输出阻抗匹配电路及其制造方法
US9692363B2 (en) 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof
JP6437668B2 (ja) * 2015-11-05 2018-12-12 株式会社新川 半導体装置およびその製造方法
CN109417364A (zh) * 2016-07-01 2019-03-01 三菱电机株式会社 放大器
DE102018106560A1 (de) * 2017-10-17 2019-04-18 Infineon Technologies Ag Drucksensorbauelemente und Verfahren zum Herstellen von Drucksensorbauelementen
CN111989861B (zh) * 2018-04-16 2023-06-20 三菱电机株式会社 高频功率放大器
KR20200071381A (ko) 2018-12-11 2020-06-19 주식회사 아모센스 Rf 트랜지스터용 베이스 기판
KR20200071401A (ko) 2018-12-11 2020-06-19 주식회사 아모센스 반도체 패키지 부품
US11869857B2 (en) 2018-12-11 2024-01-09 Amosense Co., Ltd. Semiconductor package component
NL2023348B1 (en) 2019-06-19 2021-01-27 Ampleon Netherlands Bv Amplifier having improved stability
US11700027B2 (en) 2020-05-05 2023-07-11 Mobix Labs, Inc. Multi-mode WiFi bluetooth RF front-ends
US11621322B2 (en) * 2020-07-30 2023-04-04 Wolfspeed, Inc. Die-to-die isolation structures for packaged transistor devices
NL2027145B1 (en) 2020-12-17 2022-07-11 Ampleon Netherlands Bv Power amplifier device and semiconductor die
NL2028527B1 (en) * 2021-06-24 2023-01-02 Ampleon Netherlands Bv Doherty power amplifier
NL2030764B1 (en) * 2022-01-28 2023-08-08 Ampleon Netherlands Bv Compact Doherty amplifier having improved video bandwidth
NL2031290B1 (en) * 2022-03-15 2023-09-27 Ampleon Netherlands Bv Rf power amplifier

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US6586309B1 (en) * 2000-04-24 2003-07-01 Chartered Semiconductor Manufacturing Ltd. High performance RF inductors and transformers using bonding technique
ATE522979T1 (de) * 2000-10-10 2011-09-15 California Inst Of Techn Verteilte leistungsverstärkerarchitektur mit kreisförmiger geometrie
EP1472734A2 (en) * 2002-01-24 2004-11-03 Koninklijke Philips Electronics N.V. Rf amplifier
US20040150489A1 (en) * 2003-02-05 2004-08-05 Sirenza Microdevices, Inc On-carrier impedance transform network
WO2006006119A1 (en) * 2004-07-08 2006-01-19 Koninklijke Philips Electronics N.V. Integrated doherty type amplifier arrangement with integrated feedback

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WO2006097893A3 (en) 2007-03-29
EP1864328A2 (en) 2007-12-12
WO2006097893A2 (en) 2006-09-21
US20080246547A1 (en) 2008-10-09
KR20070116115A (ko) 2007-12-06
CN101176205A (zh) 2008-05-07
JP2008533899A (ja) 2008-08-21

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