TW200703724A - Luminescence diode chip with a contact structure - Google Patents

Luminescence diode chip with a contact structure

Info

Publication number
TW200703724A
TW200703724A TW095119502A TW95119502A TW200703724A TW 200703724 A TW200703724 A TW 200703724A TW 095119502 A TW095119502 A TW 095119502A TW 95119502 A TW95119502 A TW 95119502A TW 200703724 A TW200703724 A TW 200703724A
Authority
TW
Taiwan
Prior art keywords
diode chip
contact
radiation
contact structure
luminescence diode
Prior art date
Application number
TW095119502A
Other languages
English (en)
Inventor
Johannes Baur
Andreas Weimar
Volker Haele
Berthold Hahn
Raimund Oberschmid
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200703724A publication Critical patent/TW200703724A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW095119502A 2005-06-02 2006-06-02 Luminescence diode chip with a contact structure TW200703724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005025416A DE102005025416A1 (de) 2005-06-02 2005-06-02 Lumineszenzdiodenchip mit einer Kontaktstruktur

Publications (1)

Publication Number Publication Date
TW200703724A true TW200703724A (en) 2007-01-16

Family

ID=36944125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119502A TW200703724A (en) 2005-06-02 2006-06-02 Luminescence diode chip with a contact structure

Country Status (8)

Country Link
US (1) US8581279B2 (zh)
EP (1) EP1886360B1 (zh)
JP (1) JP5114389B2 (zh)
KR (1) KR101249418B1 (zh)
CN (1) CN101238591B (zh)
DE (1) DE102005025416A1 (zh)
TW (1) TW200703724A (zh)
WO (1) WO2006128446A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832922B (zh) * 2018-11-12 2024-02-21 晶元光電股份有限公司 半導體元件

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446611B (en) * 2007-02-14 2011-08-17 Bookham Technology Plc Low creep metallization for optoelectronic applications
DE102007046519A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
DE102008011809A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008035900A1 (de) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102008030821A1 (de) * 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Elektroluminieszierende Vorrichtung und Verfahren zur Herstellung einer elektroluminieszierenden Vorrichtung
US8384115B2 (en) 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
DE102008045653B4 (de) 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP5136398B2 (ja) * 2008-12-26 2013-02-06 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子
JP2011086899A (ja) * 2009-09-15 2011-04-28 Toyoda Gosei Co Ltd Iii族窒化物半導体発光素子
KR100986556B1 (ko) * 2009-10-22 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
TWI412161B (zh) * 2009-11-06 2013-10-11 Semileds Optoelectronics Co 發光二極體裝置
EP2660883B1 (en) 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system
DE102009060750A1 (de) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 高効率発光ダイオード及びその製造方法
GB2482110B (en) * 2010-07-05 2014-08-27 Cambridge Display Tech Ltd Lighting elements
JP5170325B2 (ja) 2010-07-23 2013-03-27 日亜化学工業株式会社 発光素子
US8283652B2 (en) * 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
EP2603936B1 (en) * 2010-08-10 2016-05-11 Koninklijke Philips N.V. Shunting layer arrangement for leds
CN102479902B (zh) * 2010-11-23 2017-04-12 晶元光电股份有限公司 发光组件
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
DE102011010503A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP5741164B2 (ja) * 2011-04-12 2015-07-01 日亜化学工業株式会社 発光素子
JP5754269B2 (ja) * 2011-07-07 2015-07-29 日亜化学工業株式会社 発光素子
JP5961377B2 (ja) * 2011-12-21 2016-08-02 スタンレー電気株式会社 半導体発光素子
JP6071043B2 (ja) * 2012-11-14 2017-02-01 スタンレー電気株式会社 半導体発光素子
US10374128B2 (en) * 2013-12-12 2019-08-06 Terahertz Device Corporation Electrical contacts to light-emitting diodes for improved current spreading and injection
TWD169527S (zh) 2014-08-20 2015-08-01 晶元光電股份有限公司 發光二極體元件之部分
US10636943B2 (en) 2015-08-07 2020-04-28 Lg Innotek Co., Ltd. Light emitting diode and light emitting diode package
KR102425124B1 (ko) * 2015-08-24 2022-07-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 발광소자 패키지
CN105789386A (zh) * 2016-03-21 2016-07-20 映瑞光电科技(上海)有限公司 一种提高垂直led芯片电流扩展的制作方法
DE102017108949B4 (de) 2016-05-13 2021-08-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102017109809B4 (de) 2016-05-13 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips
TWI719931B (zh) * 2020-10-22 2021-02-21 光鋐科技股份有限公司 微型發光二極體

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008718A (en) 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
JP3666444B2 (ja) 1992-10-15 2005-06-29 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
US5861636A (en) 1995-04-11 1999-01-19 Nec Corporation Surface emitting visible light emiting diode having ring-shaped electrode
JPH0936431A (ja) * 1995-07-13 1997-02-07 Toshiba Corp 半導体発光素子
US5981384A (en) * 1995-08-14 1999-11-09 Micron Technology, Inc. Method of intermetal dielectric planarization by metal features layout modification
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3587224B2 (ja) * 1996-07-24 2004-11-10 ソニー株式会社 オーミック電極
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
EP1017113B1 (en) * 1997-01-09 2012-08-22 Nichia Corporation Nitride semiconductor device
US6268618B1 (en) 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP3744211B2 (ja) 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
DE19741609C2 (de) 1997-09-20 2003-02-27 Vishay Semiconductor Gmbh Verwendung einer Übergitterstruktur aus einer Mehrzahl von hintereinander angeordneten Heterogrenzflächenschichtfolgen zur Verbesserung der lateralen Stromausbreitung in einer lichtemittierenden Halbleiterdiode
DE19747433A1 (de) 1997-10-28 1999-05-06 Vishay Semiconductor Gmbh Lichtemittierende Halbleiterdiode
US6541797B1 (en) 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
JP3680558B2 (ja) 1998-05-25 2005-08-10 日亜化学工業株式会社 窒化物半導体素子
JP2000091638A (ja) * 1998-09-14 2000-03-31 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP2001053339A (ja) 1999-08-11 2001-02-23 Toshiba Corp 半導体発光素子およびその製造方法
DE19947030A1 (de) 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
JP3893874B2 (ja) 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
KR100558890B1 (ko) * 2001-07-12 2006-03-14 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
DE10146719A1 (de) * 2001-09-20 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
DE20115914U1 (de) * 2001-09-27 2003-02-13 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
JP2003133589A (ja) 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd GaN系半導体発光ダイオード
JP4148494B2 (ja) * 2001-12-04 2008-09-10 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
DE10243757A1 (de) 2002-01-31 2004-04-01 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips
DE10303978A1 (de) 2002-01-31 2003-11-27 Osram Opto Semiconductors Gmbh Dünnfilmhalbleiterbauelement und Verfahren zu dessen Herstellung
DE10203795B4 (de) 2002-01-31 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterbauelements
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
DE10303977A1 (de) 2002-01-31 2003-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
US6650018B1 (en) * 2002-05-24 2003-11-18 Axt, Inc. High power, high luminous flux light emitting diode and method of making same
JP2004055646A (ja) 2002-07-17 2004-02-19 Sumitomo Electric Ind Ltd 発光ダイオード素子のp側電極構造
US6787882B2 (en) * 2002-10-02 2004-09-07 The United States Of America As Represented By The Secretary Of The Navy Semiconductor varactor diode with doped heterojunction
US7474999B2 (en) * 2002-12-23 2009-01-06 Cadence Design Systems, Inc. Method for accounting for process variation in the design of integrated circuits
EP1588409A1 (de) 2003-01-31 2005-10-26 Osram Opto Semiconductors GmbH Dünnfilmhalbleiterbauelement und verfahren zu dessen herstel lung
KR101247727B1 (ko) 2003-01-31 2013-03-26 오스람 옵토 세미컨덕터스 게엠베하 반도체 소자 제조 방법
JP2004363572A (ja) 2003-05-12 2004-12-24 Showa Denko Kk 半導体発光素子および発光ダイオード
JP2005012092A (ja) * 2003-06-20 2005-01-13 Stanley Electric Co Ltd 光ファイバ用ledおよびその製造方法
JP4120493B2 (ja) * 2003-06-25 2008-07-16 松下電工株式会社 発光ダイオードおよび発光装置
US20050077538A1 (en) 2003-10-10 2005-04-14 The Regents Of The University Of California Design methodology for multiple channel heterostructures in polar materials
DE102005003460A1 (de) * 2004-01-26 2005-10-13 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Stromaufweitungsstruktur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832922B (zh) * 2018-11-12 2024-02-21 晶元光電股份有限公司 半導體元件

Also Published As

Publication number Publication date
US8581279B2 (en) 2013-11-12
DE102005025416A1 (de) 2006-12-14
KR101249418B1 (ko) 2013-04-03
JP5114389B2 (ja) 2013-01-09
US20090212307A1 (en) 2009-08-27
KR20080026558A (ko) 2008-03-25
EP1886360A1 (de) 2008-02-13
JP2008543068A (ja) 2008-11-27
WO2006128446A1 (de) 2006-12-07
CN101238591A (zh) 2008-08-06
EP1886360B1 (de) 2018-08-22
CN101238591B (zh) 2012-07-18

Similar Documents

Publication Publication Date Title
TW200703724A (en) Luminescence diode chip with a contact structure
EP2224466A3 (en) High power AllnGaN based multi-chip light emitting diode
TW200722681A (en) Illuminating device
TW200637031A (en) Compact light emitting device package with enhanced heat dissipation and method for making the package
TWI372471B (en) Led with current confinement structure and surface roughening
TW200605401A (en) Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
TW200610200A (en) Positive electrode for semiconductor light-emitting device
TW200605412A (en) Luminous diodes arrangement
EP2775541A3 (en) Luminescent ceramic for a light emitting device
TW200737553A (en) Optoelectronic semiconductor chip
TW200620704A (en) Nitride-based compound semiconductor light emitting device
TW200715601A (en) Light emitting diode chip
TW200707814A (en) Light emitting device with a lens of silicone
TW200707798A (en) Light-emitting diode
TW200631201A (en) Semiconductor light-emitting device and method of manufacture
EP1411557A3 (en) LED with a wavelength conversion element for car use
WO2006099211A3 (en) Solid state light emitting device
TW200746465A (en) Phosphor converted light emitting device
TW200602475A (en) Phosphor converted light emitting device
TWI265642B (en) Surface-mountable miniature-luminescence-and/or photo-diode and its production method
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
WO2009069785A1 (ja) 発光素子及び照明装置
TW200511615A (en) Radiation-emitting semiconductor component
TW200640032A (en) Substrate-free flip chip light emitting diode and manufacturing method thereof
WO2009152908A3 (de) Leuchtchip und leuchtvorrichtung mit einem solchen