TW200702924A - Photoresist monomer, polymer thereof and photoresist composition including the same - Google Patents

Photoresist monomer, polymer thereof and photoresist composition including the same

Info

Publication number
TW200702924A
TW200702924A TW095122366A TW95122366A TW200702924A TW 200702924 A TW200702924 A TW 200702924A TW 095122366 A TW095122366 A TW 095122366A TW 95122366 A TW95122366 A TW 95122366A TW 200702924 A TW200702924 A TW 200702924A
Authority
TW
Taiwan
Prior art keywords
polymer
photoresist
cyclic
hydrocarbyl group
photoresist composition
Prior art date
Application number
TW095122366A
Other languages
English (en)
Chinese (zh)
Inventor
Jung-Youl Lee
Jae-Woo Lee
Jae-Hyun Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050055190A external-priority patent/KR101156975B1/ko
Priority claimed from KR1020050074435A external-priority patent/KR101190527B1/ko
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200702924A publication Critical patent/TW200702924A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54Acrylic acid esters; Methacrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/06Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/12Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14The ring being saturated
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00Systems containing two condensed rings
    • C07C2602/36Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00Systems containing two condensed rings
    • C07C2602/36Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/44Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing eight carbon atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/58Ring systems containing bridged rings containing three rings
    • C07C2603/70Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74Adamantanes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/126Halogen compound containing
TW095122366A 2005-06-24 2006-06-21 Photoresist monomer, polymer thereof and photoresist composition including the same TW200702924A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050055190A KR101156975B1 (ko) 2005-06-24 2005-06-24 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물
KR1020050074435A KR101190527B1 (ko) 2005-08-12 2005-08-12 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트조성물

Publications (1)

Publication Number Publication Date
TW200702924A true TW200702924A (en) 2007-01-16

Family

ID=36933418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122366A TW200702924A (en) 2005-06-24 2006-06-21 Photoresist monomer, polymer thereof and photoresist composition including the same

Country Status (4)

Country Link
US (1) US7501222B2 (US07501222-20090310-C00005.png)
EP (1) EP1736828B1 (US07501222-20090310-C00005.png)
DE (1) DE602006018391D1 (US07501222-20090310-C00005.png)
TW (1) TW200702924A (US07501222-20090310-C00005.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI804566B (zh) * 2018-01-23 2023-06-11 日商東麗股份有限公司 發光元件、顯示器及色轉換基板

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
KR101482037B1 (ko) * 2008-06-16 2015-01-13 주식회사 동진쎄미켐 알칼리 용액에 용해 가능한 유기 반사 방지막 형성용중합체 및 이를 포함하는 조성물
US9255223B2 (en) * 2010-01-21 2016-02-09 Merck Patent Gmbh Polymerizable compounds and liquid crystal media
JP6149656B2 (ja) * 2012-09-28 2017-06-21 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、重合体及び化合物
US9488913B2 (en) * 2014-10-17 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist having decreased outgassing
US10429738B2 (en) * 2015-09-30 2019-10-01 Tokyo Ohka Kogyo Co., Ltd. Filtration filter, filtration method, production method of purified liquid chemical product for lithography, and method of forming resist pattern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975519A (en) 1989-05-12 1990-12-04 Hoechst Celanese Corporation Novel polyacetal terpolymers of trioxane and alpha, alpha- and alpha, beta-isomers of glycerol formal and functional derivatives thereof
KR100557368B1 (ko) 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
WO2000015591A1 (fr) 1998-09-11 2000-03-23 Nissan Chemical Industries, Ltd. Composes alicycliques et composition de resine durcissable
JP3856270B2 (ja) * 1998-09-24 2006-12-13 富士フイルムホールディングス株式会社 ポジ型レジスト組成物
US6569602B1 (en) * 1998-10-05 2003-05-27 E. I. Du Pont De Nemours And Company Ionization radiation imageable photopolymer compositions
KR20020077948A (ko) 2001-04-03 2002-10-18 삼성에스디아이 주식회사 칼라음극선관용 포토레지스트 제조용 단량체,칼라음극선관용 포토레지스트 중합체, 칼라음극선관용포토레지스트 조성물 및 칼라음극선관용 형광막 조성물
JP4602732B2 (ja) * 2004-10-08 2010-12-22 本州化学工業株式会社 新規なジ(メタ)アクリレート類

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI804566B (zh) * 2018-01-23 2023-06-11 日商東麗股份有限公司 發光元件、顯示器及色轉換基板
US11957020B2 (en) 2018-01-23 2024-04-09 Toray Industries, Inc. Light-emitting device, display and color conversion substrate

Also Published As

Publication number Publication date
DE602006018391D1 (de) 2011-01-05
US20060292489A1 (en) 2006-12-28
EP1736828B1 (en) 2010-11-24
US7501222B2 (en) 2009-03-10
EP1736828A1 (en) 2006-12-27

Similar Documents

Publication Publication Date Title
TW200702924A (en) Photoresist monomer, polymer thereof and photoresist composition including the same
TW528933B (en) Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
KR100536541B1 (ko) 레지스트 조성물
US6869744B2 (en) Chemically amplified positive resist composition
US6106993A (en) Chemically amplified positive resist composition
EP1136885B1 (en) Chemically amplified positive resist composition and patterning method
JP3956088B2 (ja) 化学増幅ポジ型レジスト材料
EP1236745B1 (en) Silicon-containing polymer, resist composition and patterning process
KR100888932B1 (ko) 폴리머, 레지스트 조성물 및 패턴 형성 방법
JP2002107933A (ja) レジスト材料
JP2001142199A (ja) 化学増幅ポジ型レジスト材料及びパターン形成方法
JP3965547B2 (ja) 高分子化合物、レジスト材料及びパターン形成方法
CN1185449A (zh) 含n-乙烯基内酰胺衍生物的共聚物、其制法及光致抗蚀剂
JP2002105130A (ja) 高分子化合物、レジスト材料及びパターン形成方法
US6730451B2 (en) Polymers, chemical amplification resist compositions and patterning process
JP2010286646A (ja) ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
TW200613323A (en) Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same
US6117621A (en) Patterning method
JP2004035671A (ja) 珪素含有高分子化合物、レジスト材料及びパターン形成方法
US6156481A (en) Positive resist composition
KR20010050240A (ko) 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
JP4390233B2 (ja) ArFポジ型光画像形成用組成物
TW584786B (en) Polymers, resist compositions and patterning process
JP3874061B2 (ja) 高分子化合物、レジスト材料及びパターン形成方法
JP2002107934A (ja) レジスト材料