TW200644212A - ESD protection circuit with SCR structure for semiconductor device - Google Patents

ESD protection circuit with SCR structure for semiconductor device

Info

Publication number
TW200644212A
TW200644212A TW095113928A TW95113928A TW200644212A TW 200644212 A TW200644212 A TW 200644212A TW 095113928 A TW095113928 A TW 095113928A TW 95113928 A TW95113928 A TW 95113928A TW 200644212 A TW200644212 A TW 200644212A
Authority
TW
Taiwan
Prior art keywords
type semiconductor
semiconductor region
esd protection
semiconductor device
protection circuit
Prior art date
Application number
TW095113928A
Other languages
English (en)
Other versions
TWI308386B (en
Inventor
Yasuyuki Morishita
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW200644212A publication Critical patent/TW200644212A/zh
Application granted granted Critical
Publication of TWI308386B publication Critical patent/TWI308386B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
TW095113928A 2005-04-19 2006-04-19 Esd protection circuit with scr structure for semiconductor device TWI308386B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005121428A JP2006303110A (ja) 2005-04-19 2005-04-19 半導体装置

Publications (2)

Publication Number Publication Date
TW200644212A true TW200644212A (en) 2006-12-16
TWI308386B TWI308386B (en) 2009-04-01

Family

ID=37108246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113928A TWI308386B (en) 2005-04-19 2006-04-19 Esd protection circuit with scr structure for semiconductor device

Country Status (4)

Country Link
US (1) US7495265B2 (zh)
JP (1) JP2006303110A (zh)
CN (1) CN1855494A (zh)
TW (1) TWI308386B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11942472B2 (en) 2021-09-15 2024-03-26 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge devices

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4978998B2 (ja) * 2004-03-12 2012-07-18 ローム株式会社 半導体装置
JP4991134B2 (ja) * 2005-09-15 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8144441B2 (en) * 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
JP4303761B2 (ja) 2007-03-07 2009-07-29 Ｎｅｃエレクトロニクス株式会社 半導体回路及びその動作方法
JP5337463B2 (ja) * 2008-12-03 2013-11-06 シャープ株式会社 静電気保護素子、半導体装置及びそれらの製造方法
US8634172B2 (en) * 2010-05-18 2014-01-21 International Business Machines Corporation Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure
JP2012004456A (ja) * 2010-06-18 2012-01-05 Sony Corp 半導体装置
TWI409938B (zh) 2010-12-28 2013-09-21 Ind Tech Res Inst 靜電放電保護電路
US9165891B2 (en) 2010-12-28 2015-10-20 Industrial Technology Research Institute ESD protection circuit
CN102769012B (zh) * 2011-05-05 2016-01-20 智原科技股份有限公司 静电放电保护电路
CN103165594B (zh) * 2011-12-13 2016-08-10 智原科技股份有限公司 静电放电保护装置
TWI474465B (zh) * 2012-06-21 2015-02-21 Univ Chien Hsin Sci & Tech Integrated silicon - controlled rectifier bipolar transistor circuit
CN103730458B (zh) * 2012-10-15 2016-06-08 上海华虹宏力半导体制造有限公司 硅控整流器
US9054521B2 (en) 2013-06-25 2015-06-09 Hong Kong Applied Science & Technology Research Institute Company, Ltd. Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge
JP6034268B2 (ja) * 2013-09-13 2016-11-30 株式会社東芝 半導体装置
CN104733508B (zh) * 2013-12-18 2018-04-20 比亚迪股份有限公司 带静电保护结构的mosfet及其制备方法
US9082620B1 (en) * 2014-01-08 2015-07-14 Macronix International Co., Ltd. Semiconductor device
US10290623B2 (en) * 2015-04-16 2019-05-14 Gan Systems Inc. Gate input protection for devices and systems comprising high power E-mode GaN transistors
US9640523B2 (en) * 2015-09-08 2017-05-02 Hong Kong Applied Science and Technology Research Institute Company Limited Lateral-diode, vertical-SCR hybrid structure for high-level ESD protection
US9997510B2 (en) * 2015-09-09 2018-06-12 Vanguard International Semiconductor Corporation Semiconductor device layout structure
KR102489948B1 (ko) 2016-02-18 2023-01-19 삼성전자주식회사 전자 장치 및 전자 장치 제조방법
US10134722B2 (en) * 2017-04-12 2018-11-20 Hong Kong Applied Science and Technology Research Institute Company Limited Embedded PMOS-trigger silicon controlled rectifier (SCR) with suppression rings for electro-static-discharge (ESD) protection
CN110336262B (zh) * 2019-07-10 2021-11-12 上海艾为电子技术股份有限公司 一种浪涌保护电路
CN113675832B (zh) * 2021-10-22 2022-02-08 武汉市聚芯微电子有限责任公司 静电保护方法、静电保护电路及芯片

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3375659B2 (ja) 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5744842A (en) * 1996-08-15 1998-04-28 Industrial Technology Research Institute Area-efficient VDD-to-VSS ESD protection circuit
KR100673421B1 (ko) * 1996-11-07 2007-01-23 가부시키가이샤 히타치세이사쿠쇼 반도체 집적회로장치 및 그 제조방법
JP3983067B2 (ja) 2001-03-19 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の静電保護回路
JP4290468B2 (ja) * 2002-05-24 2009-07-08 Ｎｅｃエレクトロニクス株式会社 静電気放電保護素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11942472B2 (en) 2021-09-15 2024-03-26 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge devices

Also Published As

Publication number Publication date
US20060232898A1 (en) 2006-10-19
CN1855494A (zh) 2006-11-01
JP2006303110A (ja) 2006-11-02
TWI308386B (en) 2009-04-01
US7495265B2 (en) 2009-02-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees