TW200644093A - Phase shifter for laser annealing - Google Patents

Phase shifter for laser annealing

Info

Publication number
TW200644093A
TW200644093A TW095114595A TW95114595A TW200644093A TW 200644093 A TW200644093 A TW 200644093A TW 095114595 A TW095114595 A TW 095114595A TW 95114595 A TW95114595 A TW 95114595A TW 200644093 A TW200644093 A TW 200644093A
Authority
TW
Taiwan
Prior art keywords
layer
phase shifter
laser annealing
layers
grooves
Prior art date
Application number
TW095114595A
Other languages
English (en)
Inventor
Masayuki Jyumonji
Original Assignee
Advanced Lcd Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Lcd Technologies filed Critical Advanced Lcd Technologies
Publication of TW200644093A publication Critical patent/TW200644093A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Glass Melting And Manufacturing (AREA)
TW095114595A 2005-06-06 2006-04-24 Phase shifter for laser annealing TW200644093A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165476A JP4607669B2 (ja) 2005-06-06 2005-06-06 レーザアニール用位相シフタ及びレーザアニール装置

Publications (1)

Publication Number Publication Date
TW200644093A true TW200644093A (en) 2006-12-16

Family

ID=37494506

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114595A TW200644093A (en) 2005-06-06 2006-04-24 Phase shifter for laser annealing

Country Status (5)

Country Link
US (2) US7575834B2 (zh)
JP (1) JP4607669B2 (zh)
KR (1) KR20060127757A (zh)
CN (1) CN1877433A (zh)
TW (1) TW200644093A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4956987B2 (ja) * 2005-12-16 2012-06-20 株式会社島津製作所 レーザー結晶化装置及び結晶化方法
CN104775161B (zh) * 2015-03-04 2017-10-13 信利（惠州）智能显示有限公司 激光晶化光路系统、低温多晶硅薄膜及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3332762B2 (ja) * 1996-11-14 2002-10-07 キヤノン株式会社 Ｘ線マスク構造体、及び該ｘ線マスク構造体を用いたｘ線露光装置と該ｘ線マスク構造体を用いて作製された半導体デバイス
JP2000228354A (ja) 1999-02-09 2000-08-15 Nikon Corp 転写露光装置
JP3556626B2 (ja) * 2001-08-28 2004-08-18 株式会社半導体先端テクノロジーズ パターン転写用マスク、パターン転写用マスクの製造方法、パターン形成方法及び半導体装置の製造方法
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2004259756A (ja) 2003-02-24 2004-09-16 Nikon Corp ガス置換装置、露光装置及びデバイスの製造方法
JP2005012991A (ja) 2003-05-26 2005-01-13 Fuji Electric Hi-Tech Corp Ａｃアダプタ
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
JP2005086092A (ja) 2003-09-10 2005-03-31 Tokyo Seimitsu Co Ltd 露光マスク収容器
JP4633428B2 (ja) * 2003-09-30 2011-02-16 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法、デバイス、および位相変調素子

Also Published As

Publication number Publication date
US7833349B2 (en) 2010-11-16
JP4607669B2 (ja) 2011-01-05
US7575834B2 (en) 2009-08-18
US20060275673A1 (en) 2006-12-07
JP2006339582A (ja) 2006-12-14
KR20060127757A (ko) 2006-12-13
US20090223941A1 (en) 2009-09-10
CN1877433A (zh) 2006-12-13

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