TW200640025A - Image sensor capable of adjusting focusing length for individual color and fabrication method thereof - Google Patents

Image sensor capable of adjusting focusing length for individual color and fabrication method thereof

Info

Publication number
TW200640025A
TW200640025A TW094147845A TW94147845A TW200640025A TW 200640025 A TW200640025 A TW 200640025A TW 094147845 A TW094147845 A TW 094147845A TW 94147845 A TW94147845 A TW 94147845A TW 200640025 A TW200640025 A TW 200640025A
Authority
TW
Taiwan
Prior art keywords
color
image sensor
region
photodiode
fabrication method
Prior art date
Application number
TW094147845A
Other languages
English (en)
Other versions
TWI287301B (en
Inventor
Sang-Wook Ryu
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of TW200640025A publication Critical patent/TW200640025A/zh
Application granted granted Critical
Publication of TWI287301B publication Critical patent/TWI287301B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
TW094147845A 2004-12-30 2005-12-30 Image sensor capable of adjusting focusing length for individual color and fabrication method thereof TWI287301B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040115991A KR100658930B1 (ko) 2004-12-30 2004-12-30 칼라별 초점 거리 조절이 가능한 이미지센서 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200640025A true TW200640025A (en) 2006-11-16
TWI287301B TWI287301B (en) 2007-09-21

Family

ID=36639403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147845A TWI287301B (en) 2004-12-30 2005-12-30 Image sensor capable of adjusting focusing length for individual color and fabrication method thereof

Country Status (4)

Country Link
US (1) US7312093B2 (zh)
JP (1) JP5318325B2 (zh)
KR (1) KR100658930B1 (zh)
TW (1) TWI287301B (zh)

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FR2904432B1 (fr) * 2006-07-25 2008-10-24 Commissariat Energie Atomique Structure matricielle de filtrage optique et capteur d'images associe
US8766385B2 (en) * 2006-07-25 2014-07-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtering matrix structure, associated image sensor and 3D mapping device
KR100789578B1 (ko) * 2006-08-28 2007-12-28 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
US7569804B2 (en) * 2006-08-30 2009-08-04 Dongbu Hitek Co., Ltd. Image sensor having exposed dielectric layer in a region corresponding to a first color filter by a passivation layer
KR20080049186A (ko) * 2006-11-30 2008-06-04 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
KR100821477B1 (ko) * 2006-12-27 2008-04-11 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
US8120854B2 (en) * 2006-12-28 2012-02-21 3M Innovative Properties Company Interference films having acrylamide layer and method of making same
KR100871793B1 (ko) * 2007-06-26 2008-12-02 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP2009043772A (ja) * 2007-08-06 2009-02-26 Panasonic Corp 固体撮像装置及びその製造方法
CN101500082B (zh) * 2008-01-29 2011-08-24 鸿富锦精密工业（深圳）有限公司 相机及其个人化方法
JP2009218457A (ja) * 2008-03-12 2009-09-24 Panasonic Corp 光半導体装置
CN102007593B (zh) * 2008-04-18 2013-01-02 Nxp股份有限公司 集成电路制造方法
TWI376795B (en) * 2008-06-13 2012-11-11 Taiwan Semiconductor Mfg Image sensor device and method for manufacturing the same
KR101057653B1 (ko) * 2008-11-07 2011-08-18 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US8400537B2 (en) * 2008-11-13 2013-03-19 Omnivision Technologies, Inc. Image sensors having gratings for color separation
KR20100057302A (ko) * 2008-11-21 2010-05-31 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
WO2011053711A1 (en) 2009-10-30 2011-05-05 Invisage Technologies, Inc. Systems and methods for color binning
KR101708807B1 (ko) * 2010-09-30 2017-02-21 삼성전자 주식회사 이미지 센서
KR101133154B1 (ko) * 2011-02-03 2012-04-06 디지털옵틱스 코포레이션 이스트 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지
KR101095945B1 (ko) 2011-02-03 2011-12-19 테쎄라 노쓰 아메리카, 아이엔씨. 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지
KR101387558B1 (ko) * 2012-06-27 2014-04-21 포항공과대학교 산학협력단 서로 다른 두께의 오버코팅층을 갖는 씨모스 이미지 센서 및 그 제조방법
CN103515398A (zh) * 2012-06-27 2014-01-15 奇景光电股份有限公司 晶圆级相机模块阵列
JP2014179413A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 固体撮像装置
WO2015041496A1 (ko) * 2013-09-23 2015-03-26 엘지이노텍 주식회사 카메라 모듈 및 그 제작 방법
WO2016014934A1 (en) * 2014-07-25 2016-01-28 Jae Park Color image sensor without the color filters
KR102661391B1 (ko) 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
CN110412790A (zh) * 2018-04-26 2019-11-05 京东方科技集团股份有限公司 彩膜基板、显示面板、显示装置及显示装置操作方法
FR3083644B1 (fr) * 2018-07-09 2021-05-14 St Microelectronics Crolles 2 Sas Capteur d'images
CN114706281B (zh) * 2022-05-18 2023-09-19 圆周率半导体(南通)有限公司 一种提高pcb板曝光均匀性的方法

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Also Published As

Publication number Publication date
US20060145223A1 (en) 2006-07-06
TWI287301B (en) 2007-09-21
KR100658930B1 (ko) 2006-12-15
JP2006191047A (ja) 2006-07-20
KR20060077190A (ko) 2006-07-05
JP5318325B2 (ja) 2013-10-16
US7312093B2 (en) 2007-12-25

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