TW200639872A - Memory system with memory cell and sense amplifier - Google Patents

Memory system with memory cell and sense amplifier

Info

Publication number
TW200639872A
TW200639872A TW095106565A TW95106565A TW200639872A TW 200639872 A TW200639872 A TW 200639872A TW 095106565 A TW095106565 A TW 095106565A TW 95106565 A TW95106565 A TW 95106565A TW 200639872 A TW200639872 A TW 200639872A
Authority
TW
Taiwan
Prior art keywords
memory cell
memory
read
pull
inversion stage
Prior art date
Application number
TW095106565A
Other languages
English (en)
Inventor
Emil Lambrache
Benjamin F Froemming
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of TW200639872A publication Critical patent/TW200639872A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
TW095106565A 2005-03-04 2006-02-27 Memory system with memory cell and sense amplifier TW200639872A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65847305P 2005-03-04 2005-03-04
US11/130,929 US7224635B2 (en) 2005-03-04 2005-05-17 Fast read port for register file

Publications (1)

Publication Number Publication Date
TW200639872A true TW200639872A (en) 2006-11-16

Family

ID=36943979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106565A TW200639872A (en) 2005-03-04 2006-02-27 Memory system with memory cell and sense amplifier

Country Status (5)

Country Link
US (3) US7224635B2 (zh)
AU (1) AU2006221060A1 (zh)
DE (1) DE112006000516T5 (zh)
TW (1) TW200639872A (zh)
WO (1) WO2006096265A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399754B (zh) * 2008-03-17 2013-06-21 Elpida Memory Inc 具有單端感測放大器之半導體裝置
US11328752B2 (en) 2020-05-20 2022-05-10 Silicon Storage Technology, Inc. Self-timed sensing architecture for a non-volatile memory system

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US7425841B2 (en) 2004-02-14 2008-09-16 Tabula Inc. Configurable circuits, IC's, and systems
US7167025B1 (en) 2004-02-14 2007-01-23 Herman Schmit Non-sequentially configurable IC
US7317331B2 (en) 2004-11-08 2008-01-08 Tabula, Inc. Reconfigurable IC that has sections running at different reconfiguration rates
US7330050B2 (en) 2004-11-08 2008-02-12 Tabula, Inc. Storage elements for a configurable IC and method and apparatus for accessing data stored in the storage elements
US20070189101A1 (en) * 2005-05-17 2007-08-16 Atmel Corporation Fast read port for register file
US7230869B1 (en) * 2005-03-15 2007-06-12 Jason Redgrave Method and apparatus for accessing contents of memory cells
US7272031B1 (en) * 2005-03-15 2007-09-18 Tabula, Inc. Method and apparatus for reduced power cell
US7669097B1 (en) 2006-03-27 2010-02-23 Tabula, Inc. Configurable IC with error detection and correction circuitry
US7839697B2 (en) * 2006-12-21 2010-11-23 Panasonic Corporation Semiconductor memory device
US8112468B1 (en) 2007-03-22 2012-02-07 Tabula, Inc. Method and apparatus for performing an operation with a plurality of sub-operations in a configurable IC
CN101329608B (zh) * 2007-06-18 2010-06-09 联想(北京)有限公司 触摸屏输入方法
US7548456B2 (en) * 2007-07-02 2009-06-16 Faraday Technology Corp. Combo memory cell
EP2201569A4 (en) 2007-09-06 2011-07-13 Tabula Inc CONFIGURATION CONTEXT SWITCH
US8681534B2 (en) * 2011-12-29 2014-03-25 Stmicroelectronics International N.V. Dual port register file memory cell with reduced susceptibility to noise during same row access
FR2986652A1 (fr) * 2012-02-03 2013-08-09 St Microelectronics Sa Memoire volatile a consommation reduite et capacite de stockage amelioree
US9058860B2 (en) 2012-03-29 2015-06-16 Memoir Systems, Inc. Methods and apparatus for synthesizing multi-port memory circuits
FR2996950B1 (fr) * 2012-10-11 2016-01-01 Dolphin Integration Sa Réseau de mémoire base sur des bascules
US9064556B2 (en) 2013-10-23 2015-06-23 Qualcomm Incorporated High frequency pseudo dual port memory
US11062766B2 (en) * 2019-01-05 2021-07-13 Synopsys, Inc. Enhanced read sensing margin and minimized VDD for SRAM cell arrays
US11183234B2 (en) 2019-11-25 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Bitcell supporting bit-write-mask function

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US5574935A (en) * 1993-12-29 1996-11-12 Intel Corporation Superscalar processor with a multi-port reorder buffer
US5434822A (en) * 1994-07-07 1995-07-18 Intel Corporation Apparatus and method for adjusting and maintaining a bitline precharge level
US5521875A (en) * 1994-12-30 1996-05-28 Vlsi Technology, Inc. Dynamic single-ended sense amp improvement with charge share assist
DE69615421T2 (de) * 1995-01-12 2002-06-06 Intergraph Corp., Huntsville Registerspeicher mit Umleitungsmöglichkeit
US5710742A (en) * 1995-05-12 1998-01-20 International Business Machines Corporation High density two port SRAM cell for low voltage CMOS applications
US5742557A (en) * 1996-06-20 1998-04-21 Northern Telecom Limited Multi-port random access memory
US5828610A (en) * 1997-03-31 1998-10-27 Seiko Epson Corporation Low power memory including selective precharge circuit
US6005794A (en) * 1997-06-27 1999-12-21 Texas Instruments Incorporated Static memory with low power write port
US6104663A (en) * 1999-01-06 2000-08-15 Virage Logic Corp. Memory array with a simultaneous read or simultaneous write ports
JP2003030988A (ja) * 2001-07-12 2003-01-31 Mitsubishi Electric Corp 半導体記憶回路
ITRM20010531A1 (it) * 2001-08-31 2003-02-28 Micron Technology Inc Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
US6834024B2 (en) * 2001-10-23 2004-12-21 Ip-First, Llc Reduced size multi-port register cell
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399754B (zh) * 2008-03-17 2013-06-21 Elpida Memory Inc 具有單端感測放大器之半導體裝置
US11328752B2 (en) 2020-05-20 2022-05-10 Silicon Storage Technology, Inc. Self-timed sensing architecture for a non-volatile memory system
TWI787815B (zh) * 2020-05-20 2022-12-21 美商超捷公司 非揮發性記憶體系統之自動計時感測架構

Also Published As

Publication number Publication date
WO2006096265A2 (en) 2006-09-14
US7304904B2 (en) 2007-12-04
US7397723B2 (en) 2008-07-08
US7224635B2 (en) 2007-05-29
WO2006096265A3 (en) 2007-11-01
US20070189092A1 (en) 2007-08-16
US20060198204A1 (en) 2006-09-07
DE112006000516T5 (de) 2008-01-10
US20070189090A1 (en) 2007-08-16
AU2006221060A1 (en) 2006-09-14

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