TW200638557A - Lateral current blocking light emitting diode and method for manufacturing the same - Google Patents

Lateral current blocking light emitting diode and method for manufacturing the same

Info

Publication number
TW200638557A
TW200638557A TW094113734A TW94113734A TW200638557A TW 200638557 A TW200638557 A TW 200638557A TW 094113734 A TW094113734 A TW 094113734A TW 94113734 A TW94113734 A TW 94113734A TW 200638557 A TW200638557 A TW 200638557A
Authority
TW
Taiwan
Prior art keywords
conductivity type
semiconductor layer
light emitting
emitting diode
type electrode
Prior art date
Application number
TW094113734A
Other languages
English (en)
Other versions
TWI246210B (en
Inventor
Shi-Ming Chen
Original Assignee
Epitech Corp Ltd
Shi-Ming Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epitech Corp Ltd, Shi-Ming Chen filed Critical Epitech Corp Ltd
Priority to TW094113734A priority Critical patent/TWI246210B/zh
Priority to US11/226,828 priority patent/US7544971B2/en
Application granted granted Critical
Publication of TWI246210B publication Critical patent/TWI246210B/zh
Priority to JP2006062599A priority patent/JP2006310785A/ja
Publication of TW200638557A publication Critical patent/TW200638557A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW094113734A 2005-04-28 2005-04-28 Lateral current blocking light emitting diode and method for manufacturing the same TWI246210B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW094113734A TWI246210B (en) 2005-04-28 2005-04-28 Lateral current blocking light emitting diode and method for manufacturing the same
US11/226,828 US7544971B2 (en) 2005-04-28 2005-09-14 Lateral current blocking light-emitting diode and method for manufacturing the same
JP2006062599A JP2006310785A (ja) 2005-04-28 2006-03-08 横電流抑止の発光ダイオードおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094113734A TWI246210B (en) 2005-04-28 2005-04-28 Lateral current blocking light emitting diode and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TWI246210B TWI246210B (en) 2005-12-21
TW200638557A true TW200638557A (en) 2006-11-01

Family

ID=37191358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113734A TWI246210B (en) 2005-04-28 2005-04-28 Lateral current blocking light emitting diode and method for manufacturing the same

Country Status (3)

Country Link
US (1) US7544971B2 (zh)
JP (1) JP2006310785A (zh)
TW (1) TWI246210B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103178184A (zh) * 2011-12-23 2013-06-26 亿光电子工业股份有限公司 发光二极管结构
TWI425669B (zh) * 2010-05-21 2014-02-01 Advanced Optoelectronic Tech 發光二極體
CN112117355A (zh) * 2011-08-09 2020-12-22 晶元光电股份有限公司 光电组件及其制造方法

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KR100665284B1 (ko) * 2005-11-07 2007-01-09 삼성전기주식회사 반도체 발광 소자
US20080023694A1 (en) * 2006-07-25 2008-01-31 Chi Mei El Corp. Display device and method of manufacturing the same
US8502263B2 (en) * 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US7576364B2 (en) * 2007-02-15 2009-08-18 Chi Mei Optoelectronics Corp. Display device and method of manufacturing the same
TWI366291B (en) * 2007-03-30 2012-06-11 Epistar Corp Semiconductor light-emitting device having stacked transparent electrodes
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
US7531688B2 (en) 2007-06-12 2009-05-12 Orbitek, Inc. Method for recovering unreacted alcohol from biodiesel product streams by flash purification
FI121902B (fi) * 2007-06-20 2011-05-31 Optogan Oy Valoa säteilevä diodi
KR100941616B1 (ko) * 2008-05-15 2010-02-11 주식회사 에피밸리 반도체 발광소자
US8384115B2 (en) * 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
TWI407586B (zh) * 2008-12-15 2013-09-01 Everlight Electronics Co Ltd 一種覆晶結構的發光二極體裝置
TWI473292B (zh) * 2008-12-15 2015-02-11 Lextar Electronics Corp 發光二極體晶片
US7939847B2 (en) * 2009-03-31 2011-05-10 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Quasi-vertical light emitting diode
KR101039946B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101020945B1 (ko) * 2009-12-21 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR20110125363A (ko) * 2010-05-13 2011-11-21 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR101294824B1 (ko) * 2010-12-31 2013-08-08 갤럭시아포토닉스 주식회사 전류 저지층을 갖는 발광 다이오드 및 발광 다이오드 패키지
JP5652234B2 (ja) * 2011-02-07 2015-01-14 日亜化学工業株式会社 半導体発光素子
JP5367792B2 (ja) * 2011-10-07 2013-12-11 スタンレー電気株式会社 発光素子
USD709840S1 (en) 2012-10-03 2014-07-29 Epistar Corporation Light-emitting diode
US20140110741A1 (en) * 2012-10-18 2014-04-24 Epistar Corporation Light-emitting device
JP6042238B2 (ja) * 2013-03-11 2016-12-14 スタンレー電気株式会社 発光素子
JP6185769B2 (ja) * 2013-06-24 2017-08-23 スタンレー電気株式会社 発光素子
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
TWI747111B (zh) * 2015-02-17 2021-11-21 新世紀光電股份有限公司 發光二極體晶片
CN113544865B (zh) * 2019-12-31 2024-03-08 重庆康佳光电科技有限公司 发光二极管芯片、显示面板以及电子设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483085A (en) * 1994-05-09 1996-01-09 Motorola, Inc. Electro-optic integrated circuit with diode decoder
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6445007B1 (en) * 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
JP4325160B2 (ja) * 2002-08-28 2009-09-02 日亜化学工業株式会社 窒化物半導体発光素子
TWI222756B (en) * 2002-11-12 2004-10-21 Epitech Corp Ltd Lateral current blocking light emitting diode and method of making the same
WO2005069388A1 (ja) * 2004-01-20 2005-07-28 Nichia Corporation 半導体発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425669B (zh) * 2010-05-21 2014-02-01 Advanced Optoelectronic Tech 發光二極體
CN112117355A (zh) * 2011-08-09 2020-12-22 晶元光电股份有限公司 光电组件及其制造方法
CN103178184A (zh) * 2011-12-23 2013-06-26 亿光电子工业股份有限公司 发光二极管结构

Also Published As

Publication number Publication date
TWI246210B (en) 2005-12-21
JP2006310785A (ja) 2006-11-09
US7544971B2 (en) 2009-06-09
US20060244005A1 (en) 2006-11-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees